JP5677753B2 - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP5677753B2 JP5677753B2 JP2010043941A JP2010043941A JP5677753B2 JP 5677753 B2 JP5677753 B2 JP 5677753B2 JP 2010043941 A JP2010043941 A JP 2010043941A JP 2010043941 A JP2010043941 A JP 2010043941A JP 5677753 B2 JP5677753 B2 JP 5677753B2
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- Prior art keywords
- light emitting
- layer
- light
- escape
- emitting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title description 33
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- 229910010421 TiNx Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 103
- 238000000034 method Methods 0.000 description 43
- 239000000758 substrate Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 17
- 238000000605 extraction Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
(第1実施例)
(第2実施例)
Claims (3)
- 第1導電型半導体層、活性層、第2導電型半導体層を含む発光構造物と、
前記発光構造物上に形成された第1電極と、
前記発光構造物上に形成された光脱出層と、を含み、
前記光脱出層は、前記第1電極の一部を覆うように配置され、
前記光脱出層は、前記第1電極及び前記第1導電型半導体層の一部を露出させる除去された領域を有し、
前記第1電極は、互いに離隔された複数の翼で形成された翼の形態を有し、
前記翼の形態の各々の翼の一部は、前記光脱出層の除去された領域を介して露出され、
前記光脱出層が除去された領域に配置されて前記光脱出層から露出された前記各々の翼の一部を全て覆うように配置されたパッドをさらに含む、発光素子。 - 前記光脱出層は、前記発光構造物の屈折率と前記発光構造物に対する背景物質の屈折率の間の屈折率を有する、請求項1に記載の発光素子。
- 前記光脱出層は、TiO2、Al2O3、ZnO、MgF2、In2O3、SnO2、TiNx、Ga2O3、ITO、In−Zn−O、ZnO:Al中少なくとも1つを含む、請求項1に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090021441A KR100999756B1 (ko) | 2009-03-13 | 2009-03-13 | 발광소자 및 그 제조방법 |
KR10-2009-0021441 | 2009-03-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010219521A JP2010219521A (ja) | 2010-09-30 |
JP5677753B2 true JP5677753B2 (ja) | 2015-02-25 |
Family
ID=42307927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010043941A Active JP5677753B2 (ja) | 2009-03-13 | 2010-03-01 | 発光素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8193536B2 (ja) |
EP (1) | EP2228839B1 (ja) |
JP (1) | JP5677753B2 (ja) |
KR (1) | KR100999756B1 (ja) |
CN (1) | CN101834242B (ja) |
TW (1) | TW201034252A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986440B1 (ko) * | 2009-04-28 | 2010-10-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
TWI463700B (zh) * | 2012-12-27 | 2014-12-01 | Genesis Photonics Inc | 發光元件的電極墊結構 |
TWI577045B (zh) * | 2013-07-10 | 2017-04-01 | 晶元光電股份有限公司 | 發光元件 |
US10002991B2 (en) | 2013-07-10 | 2018-06-19 | Epistar Corporation | Light-emitting element |
US9318663B2 (en) | 2013-07-10 | 2016-04-19 | Epistar Corporation | Light-emitting element |
CN105720175B (zh) * | 2016-03-23 | 2018-04-24 | 华灿光电(苏州)有限公司 | 一种发光二极管的封装方法 |
US20220209166A1 (en) * | 2019-04-11 | 2022-06-30 | Sharp Kabushiki Kaisha | Light-emitting element and display device |
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JP2946852B2 (ja) * | 1991-07-08 | 1999-09-06 | オムロン株式会社 | 半導体発光素子及びその製造方法 |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
JP4523097B2 (ja) * | 1999-11-30 | 2010-08-11 | 豊田合成株式会社 | Iii族窒化物系化合物半導体レーザダイオード |
JP3921989B2 (ja) * | 2001-10-19 | 2007-05-30 | 日亜化学工業株式会社 | 半導体発光素子 |
TW578319B (en) * | 2003-01-23 | 2004-03-01 | Epitech Corp Ltd | Light emitting diode having anti-reflection layer and method of making the same |
US7118438B2 (en) * | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
US7087936B2 (en) * | 2003-04-30 | 2006-08-08 | Cree, Inc. | Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction |
JP4572597B2 (ja) * | 2003-06-20 | 2010-11-04 | 日亜化学工業株式会社 | 窒化物半導体素子 |
WO2005116521A1 (en) * | 2004-05-28 | 2005-12-08 | Tir Systems Ltd. | Luminance enhancement apparatus and method |
JPWO2006028118A1 (ja) * | 2004-09-08 | 2008-05-08 | ローム株式会社 | 半導体発光素子 |
US7223998B2 (en) * | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
EP2426743B1 (en) * | 2004-10-22 | 2019-02-20 | Seoul Viosys Co., Ltd | GaN compound semiconductor light emitting element and method of manufacturing the same |
US7405433B2 (en) * | 2005-02-22 | 2008-07-29 | Avago Technologies Ecbu Ip Pte Ltd | Semiconductor light emitting device |
KR100701975B1 (ko) | 2005-04-28 | 2007-03-30 | (주)더리즈 | 발광 소자 |
KR100716752B1 (ko) | 2005-05-03 | 2007-05-14 | (주)더리즈 | 발광 소자와 이의 제조 방법 |
KR20060125079A (ko) | 2005-06-01 | 2006-12-06 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 및 그 제조방법 |
TWI270222B (en) * | 2005-10-07 | 2007-01-01 | Formosa Epitaxy Inc | Light emitting diode chip |
KR20070042214A (ko) | 2005-10-18 | 2007-04-23 | 김성진 | 질화물 반도체 발광 다이오드 및 그 제조방법 |
JP5214128B2 (ja) * | 2005-11-22 | 2013-06-19 | シャープ株式会社 | 発光素子及び発光素子を備えたバックライトユニット |
KR100643471B1 (ko) | 2005-11-24 | 2006-11-10 | 엘지전자 주식회사 | 발광소자 패키지 및 그 제조방법 |
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-
2009
- 2009-03-13 KR KR1020090021441A patent/KR100999756B1/ko active IP Right Grant
- 2009-12-11 EP EP09178828.1A patent/EP2228839B1/en not_active Not-in-force
-
2010
- 2010-01-15 CN CN2010100044177A patent/CN101834242B/zh not_active Expired - Fee Related
- 2010-01-25 US US12/693,239 patent/US8193536B2/en active Active
- 2010-03-01 JP JP2010043941A patent/JP5677753B2/ja active Active
- 2010-03-03 TW TW099106094A patent/TW201034252A/zh unknown
-
2012
- 2012-04-04 US US13/439,668 patent/US8482034B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120193668A1 (en) | 2012-08-02 |
JP2010219521A (ja) | 2010-09-30 |
TW201034252A (en) | 2010-09-16 |
EP2228839A3 (en) | 2015-04-01 |
CN101834242B (zh) | 2012-11-28 |
US8193536B2 (en) | 2012-06-05 |
EP2228839A2 (en) | 2010-09-15 |
CN101834242A (zh) | 2010-09-15 |
KR20100103043A (ko) | 2010-09-27 |
US20100230699A1 (en) | 2010-09-16 |
EP2228839B1 (en) | 2019-02-13 |
KR100999756B1 (ko) | 2010-12-08 |
US8482034B2 (en) | 2013-07-09 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |