KR20100102738A - 배리어 층의 무전해 증착 - Google Patents
배리어 층의 무전해 증착 Download PDFInfo
- Publication number
- KR20100102738A KR20100102738A KR1020107018826A KR20107018826A KR20100102738A KR 20100102738 A KR20100102738 A KR 20100102738A KR 1020107018826 A KR1020107018826 A KR 1020107018826A KR 20107018826 A KR20107018826 A KR 20107018826A KR 20100102738 A KR20100102738 A KR 20100102738A
- Authority
- KR
- South Korea
- Prior art keywords
- solution
- deposition
- reducing agent
- mol
- metal surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08150612.3 | 2008-01-24 | ||
| EP08150612 | 2008-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100102738A true KR20100102738A (ko) | 2010-09-24 |
Family
ID=40901477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107018826A Ceased KR20100102738A (ko) | 2008-01-24 | 2009-01-20 | 배리어 층의 무전해 증착 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20110059611A1 (cg-RX-API-DMAC10.html) |
| EP (1) | EP2255024A2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP2011510177A (cg-RX-API-DMAC10.html) |
| KR (1) | KR20100102738A (cg-RX-API-DMAC10.html) |
| CN (1) | CN101925691A (cg-RX-API-DMAC10.html) |
| IL (1) | IL206719A (cg-RX-API-DMAC10.html) |
| RU (1) | RU2492279C2 (cg-RX-API-DMAC10.html) |
| TW (1) | TW200949010A (cg-RX-API-DMAC10.html) |
| WO (1) | WO2009092706A2 (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150140242A (ko) * | 2014-06-05 | 2015-12-15 | 램 리써치 코포레이션 | 적어도 두 개의 보레인 환원제를 갖는 무전해 도금 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011000758A1 (en) | 2009-06-30 | 2011-01-06 | Basf Se | Aqueous alkaline cleaning compositions and methods of their use |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| US8895441B2 (en) | 2012-02-24 | 2014-11-25 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
| ES2826441T3 (es) * | 2017-06-02 | 2021-05-18 | Atotech Deutschland Gmbh | Baños de metalizado no electrolítico de aleación de níquel, un método de deposición de aleaciones de níquel, depósitos de aleación de níquel y usos de dichos depósitos de aleación de níquel formados |
| EP3743541A1 (en) * | 2018-01-25 | 2020-12-02 | Université de Mons | Nickel alloy plating |
| SG11202103872PA (en) | 2018-11-06 | 2021-05-28 | Atotech Deutschland Gmbh | Electroless nickel plating solution |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002778A (en) * | 1973-08-15 | 1977-01-11 | E. I. Du Pont De Nemours And Company | Chemical plating process |
| US6645567B2 (en) * | 2001-12-19 | 2003-11-11 | Intel Corporation | Electroless plating bath composition and method of using |
| US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
| US6902605B2 (en) * | 2003-03-06 | 2005-06-07 | Blue29, Llc | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
| EP1627098A1 (de) * | 2003-05-09 | 2006-02-22 | Basf Aktiengesellschaft | Zusammensetzungen zur stromlosen abscheidung tern rer materi alien f r die halbleiterindustrie |
| US6924232B2 (en) * | 2003-08-27 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor process and composition for forming a barrier material overlying copper |
| US7531463B2 (en) * | 2003-10-20 | 2009-05-12 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
| US7268074B2 (en) * | 2004-06-14 | 2007-09-11 | Enthone, Inc. | Capping of metal interconnects in integrated circuit electronic devices |
| US7332193B2 (en) * | 2004-10-18 | 2008-02-19 | Enthone, Inc. | Cobalt and nickel electroless plating in microelectronic devices |
| US7176133B2 (en) * | 2004-11-22 | 2007-02-13 | Freescale Semiconductor, Inc. | Controlled electroless plating |
| US7476616B2 (en) * | 2004-12-13 | 2009-01-13 | Fsi International, Inc. | Reagent activator for electroless plating |
| US20060188659A1 (en) * | 2005-02-23 | 2006-08-24 | Enthone Inc. | Cobalt self-initiated electroless via fill for stacked memory cells |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US7658790B1 (en) * | 2007-07-03 | 2010-02-09 | Intermolecular, Inc. | Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers |
-
2009
- 2009-01-20 US US12/863,114 patent/US20110059611A1/en not_active Abandoned
- 2009-01-20 KR KR1020107018826A patent/KR20100102738A/ko not_active Ceased
- 2009-01-20 JP JP2010543475A patent/JP2011510177A/ja active Pending
- 2009-01-20 RU RU2010134880/02A patent/RU2492279C2/ru not_active IP Right Cessation
- 2009-01-20 CN CN2009801029184A patent/CN101925691A/zh active Pending
- 2009-01-20 WO PCT/EP2009/050589 patent/WO2009092706A2/en not_active Ceased
- 2009-01-20 EP EP09703297A patent/EP2255024A2/en not_active Withdrawn
- 2009-01-22 TW TW098102624A patent/TW200949010A/zh unknown
-
2010
- 2010-06-30 IL IL206719A patent/IL206719A/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150140242A (ko) * | 2014-06-05 | 2015-12-15 | 램 리써치 코포레이션 | 적어도 두 개의 보레인 환원제를 갖는 무전해 도금 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110059611A1 (en) | 2011-03-10 |
| WO2009092706A3 (en) | 2010-01-07 |
| IL206719A0 (en) | 2010-12-30 |
| RU2010134880A (ru) | 2012-02-27 |
| EP2255024A2 (en) | 2010-12-01 |
| TW200949010A (en) | 2009-12-01 |
| CN101925691A (zh) | 2010-12-22 |
| IL206719A (en) | 2014-06-30 |
| WO2009092706A2 (en) | 2009-07-30 |
| JP2011510177A (ja) | 2011-03-31 |
| RU2492279C2 (ru) | 2013-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6903061B2 (ja) | Si貫通電極のメッキのプロセス及び化学作用 | |
| US20080254205A1 (en) | Self-initiated alkaline metal ion free electroless deposition composition for thin co-based and ni-based alloys | |
| JP6367322B2 (ja) | 湿式ウエハバックコンタクトを使用したシリコンビアを通した銅メッキのための方法 | |
| US20110059611A1 (en) | Electroless deposition of barrier layers | |
| US7332193B2 (en) | Cobalt and nickel electroless plating in microelectronic devices | |
| JP2009509050A (ja) | マイクロエレクトロニクス応用における無電解堆積の欠陥及びプロセス制御 | |
| JP6099678B2 (ja) | コバルト合金無電解めっき用アルカリ性めっき浴 | |
| KR20080018945A (ko) | 마이크로전자장치의 코발트 무전해 도금 | |
| JP7735686B2 (ja) | 無電解銅めっき用組成物および無電解銅めっき方法 | |
| JP2008533702A (ja) | スタック・メモリ・セルのためのコバルト自己開始的無電解ビア充填 | |
| KR101224208B1 (ko) | 음이온 계면활성제를 포함하는 배선용 무전해 동도금액 및 이에 의해 제조된 동 피막 | |
| KR20120034104A (ko) | 무전해 성막 용액 및 프로세스 제어 | |
| EP4505000B1 (en) | Electrolyte comprising an accelerator agent for bottom-up copper electroplating | |
| KR101375291B1 (ko) | 미량의 디메틸아민 보란이 첨가된 자기 촉매형 무전해니켈-인-코발트 도금액 및 그의 제조방법 | |
| KR101224207B1 (ko) | 양이온 계면활성제를 포함하는 배선용 무전해 동도금액 및 이에 의해 제조된 동 피막 | |
| HK40122506B (en) | Electrolyte comprising an accelerator agent for bottom-up copper electroplating | |
| HK40122506A (en) | Electrolyte comprising an accelerator agent for bottom-up copper electroplating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20100824 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20140117 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20150324 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20151230 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20150324 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |