KR20100088506A - Facility and method for treating substrates - Google Patents

Abstract

PURPOSE: A facility and a method for processing substrates are provided to shorten a time for processing substrates by eliminating a cleaning solution, which is remained on substrates, without a dry nozzle. CONSTITUTION: A container(20), in which substrates are loaded, is arranged on a load part(100). A first buffer module(300) includes a buffer, in which the substrates are temporarily placed. An index module(200) transfers the substrates between the load port and the first buffer module. A coating and developing module(400) applies photo resists on the substrates and performs a developing process. A second buffer module(500) includes a buffer, in which the substrates are temporarily placed. An interface module(700) is connected with the exposure unit.

Description

Substrate Processing Facility and Substrate Processing Method {FACILITY AND METHOD FOR TREATING SUBSTRATES}

The present invention relates to equipment and methods for processing substrates, and more particularly, to equipment and methods used to perform photolithography processes on wafers.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed. Photolithography processes performed to form patterns play an important role in achieving high integration of semiconductor devices.

In general, an apparatus for performing a photolithography process has a coating chamber for applying a resist to a wafer, a developing chamber for performing a developing process on an exposed wafer, and a processing module having an interface for inline connection with the exposure apparatus. Recently, however, in addition to the processes described above, a greater number of processes are required before and after exposure. In a typical facility, chambers that perform each process and a transfer robot that carries wafers are inefficiently arranged, and thus, a schedule of the transfer robot cannot be efficiently provided.

The present invention provides a substrate processing apparatus and method that can improve the efficiency of a photolithography process.

The present invention provides a substrate processing facility and method that can prevent the process from accumulating due to increased throughput of the transfer robot.

The present invention provides a substrate processing facility having a layout that allows the chambers that perform the process to be efficiently disposed.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus for performing a photolithography process. The substrate processing facility includes a load port in which a container in which the substrates are housed, a first buffer module having a buffer for temporarily storing the substrates, an index module for transporting the substrate between the load port and the first buffer module, and a photoresist for the substrate. A coating and developing module for performing the coating process and the developing process, a second buffer module having a buffer for temporarily storing the substrates, a process required between the photoresist coating process and the exposure process for the substrate and between the exposure process and the developing process And a pre-exposure processing module for performing the step, and an interface module connected to the exposure apparatus. The load port, the index module, the first buffer module, the coating and developing module, the second buffer module, the pre-exposure processing module, and the interface module are arranged in a line along a first direction. The pre-exposure before and after processing module may include a protective film applying chamber for applying a protective film on a substrate. The pre-exposure before and after processing module may include a cleaning chamber for cleaning the substrate.

In example embodiments, the pre-exposure before and after processing module may include a pretreatment module and a post-treatment module partitioned into layers, the protective film applying chamber may be disposed in the pretreatment module, and the cleaning chamber may be disposed in the post-treatment module. have. The pretreatment module may further include a bake chamber for performing a bake process on the substrate and a pretreatment robot for transporting the substrate between the bake chamber and the protective coating layer, and the postprocessing module performs a post-exposure bake process on the substrate. The apparatus may further include a post-processing robot for transporting the substrate between the post-exposure bake chamber and the cleaning chamber and the post-exposure bake chamber.

The second buffer module may further include an edge exposure chamber that exposes an edge of the substrate and a second buffer robot that transports the substrate to the edge exposure chamber. The second buffer module may further include a cooling chamber for cooling the substrate.

In one embodiment, the coating and developing module includes a coating module and a developing module partitioned into layers between each other, wherein the coating module is a coating chamber for applying a photoresist on a substrate, a baking chamber for performing a heat treatment on the substrate, A coating robot for transporting a substrate between the baking chamber and the coating chamber of the coating module, wherein the developing module includes a developing chamber performing a developing process on the substrate, a baking chamber performing heat treatment on the substrate, and The apparatus may further include a developing robot configured to transport a substrate between the baking chamber and the developing chamber.

The coating module and the pretreatment module may be disposed at the same height, and the developing module and the post treatment module may be disposed at the same height. The second buffer module includes a cooling chamber for performing a cooling process on a substrate, wherein the buffer of the second buffer module is disposed at a height corresponding to the application module, and the cooling chamber corresponds to the developing module. May be placed at a height.

The interface module is a first buffer disposed at a height corresponding to the pretreatment module to temporarily store the substrate, a second buffer disposed at a height corresponding to the post-processing module and temporarily storing the substrate, and the first buffer. It may include a buffer and the exposure apparatus, and an interface robot for transporting the substrate between the second buffer and the exposure apparatus. ,

The protective film applying chamber, the transfer chamber provided with the pretreatment robot, and the bake chamber of the pretreatment module are sequentially disposed in a second direction perpendicular to the first direction when viewed from above, and the cleaning chamber and the post-treatment. The transfer chamber in which the robot is disposed, and the post-exposure bake chamber may be sequentially disposed in the second direction when viewed from the top. Each of the transfer chamber provided with the pretreatment robot and the transfer chamber provided with the post-processing robot may be disposed in parallel with the buffer of the second buffer module along the first direction when viewed from the top. The transfer chamber provided with the application robot and the transfer chamber provided with the developing robot may be arranged in parallel with the buffer of the second buffer module in a first direction when viewed from the top.

The second buffer module includes an edge exposure chamber that exposes an edge of the substrate and a second buffer robot that transports the substrate to the edge exposure chamber, wherein the buffer of the second buffer module, the second buffer robot, and the The edge exposure chamber may be sequentially disposed along a second direction perpendicular to the first direction when viewed from the top.

The present invention also provides a method of treating a substrate. The substrate treating method may include performing a process of applying a photoresist on a substrate, performing a process of applying a protective film on the substrate on which the photoresist is applied, and performing a liquid immersion exposure process on the substrate on which the protective film is applied. Performing a process of cleaning the substrate on which the immersion exposure has been performed, and performing a developing process on the substrate.

The method may further include performing a post-exposure bake process on the substrate, between the cleaning of the substrate and the developing process on the substrate.

According to an example, the process of cleaning the substrate may be performed by supplying a cleaning liquid to the substrate, and removal of the cleaning liquid remaining on the substrate may be performed by heating the substrate without supplying a fluid.

According to an example, the process of cleaning the substrate may be performed by cleaning the substrate using a cleaning liquid, and the process of removing the cleaning liquid remaining on the substrate may be performed by the post-exposure bake process performed immediately after the process of cleaning the substrate. Can be.

In some embodiments, the passivation layer may be removed during or after the developing process.

In some embodiments, a portion of the passivation layer may be removed in the developing process, and the other part may be removed in the ashing process.

According to the present invention, a photolithography process can be performed efficiently.

According to the present invention, when a chemically amplified photoresist is used, the post-exposure bake process can be processed in a short time after the exposure process.

According to the present invention, since the cleaning liquid remaining on the substrate can be removed together with acid amplification in the bake unit after exposure, a separate drying nozzle is not provided in the cleaning chamber, thereby reducing the time required for the process.

According to the present invention, since the protective film is removed in a subsequent developing step and an ashing step without providing a separate protective film removing chamber in the pre-exposure processing unit, the time required for the process can be reduced.

Hereinafter, embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 6G. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

The equipment of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the equipment of this embodiment is used to perform a coating process, a developing process, and a pre-exposure treatment process required before and after the liquid immersion exposure to the substrate. Hereinafter, a case where a wafer is used as a substrate will be described.

1 to 4 schematically show a substrate processing apparatus 1 according to an embodiment of the present invention. 1 is a view of the substrate processing equipment 1 from above, FIG. 2 is a view of the equipment 1 of FIG. 1 viewed from the AA direction, and FIG. 3 is a view of the equipment 1 of FIG. 1 viewed from the BB direction. 4 is the figure which looked at the installation 1 of FIG. 1 from the CC direction. The substrate processing facility 1 includes a load port 100, an index module 200, a first buffer module 300, an application and development module 400, a second buffer module 500, and a pre- and post-exposure processing module 600. And an interface module 700. Load port 100, index module 200, first buffer module 300, coating and developing module 400, second buffer module 500, pre-exposure processing module 600, and interface module 700 Are sequentially arranged in one direction. Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( The direction in which the 700 is disposed is called a first direction 12, and when viewed from the top, a direction perpendicular to the first direction 12 is called a second direction 14, and the first direction 12 and the second direction. A direction perpendicular to the direction 14 is referred to as a third direction 16.

The wafer W is moved in the state accommodated in the container 20. At this time, the container 20 has a structure that can be sealed from the outside. For example, as the container 20, a front open unified pod (FOUP) having a door in front may be used. Hereinafter, each configuration will be described in detail with reference to FIGS. 1 to 4.

(Load port)

The load port 100 has a mounting table 120 on which a container 20 containing wafers W is placed. The mounting table 120 is provided in plural, and the mounting tables 200 are arranged in a line along the second direction 14. In FIG. 1 four mounting blocks 120 are provided.

(Index module)

The index module 200 transfers the wafer W between the container 20 placed on the mounting table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in the shape of an empty rectangular parallelepiped, and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a height lower than that of the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 is a four-axis drive so that the hand 221, which directly handles the wafer W, is movable and rotated in the first direction 12, the second direction 14, and the third direction 16. This has a possible structure. Index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. Arm 222 is provided in a stretchable and rotatable structure. The support 223 is disposed in the longitudinal direction along the third direction 16. Arm 222 is coupled to support 223 to be movable along support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided such that its longitudinal direction is disposed along the second direction 14. The pedestal 224 is coupled to the guide rail 230 to be linearly movable along the guide rail 230. In addition, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the container 20.

(First buffer module)

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located in the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed along the third direction 16 from below. The first buffer 320 is located at a height corresponding to the coating module 401 of the coating and developing module 400 described later, and the second buffer 330 and the cooling chamber 350 are the coating and developing modules (described later). It is located at a height corresponding to the developing module 402 of 400. The first buffer robot 360 is positioned to be spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 in a second direction 14.

The first buffer 320 and the second buffer 330 temporarily store the plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed in the housing 331 and are spaced apart from each other along the third direction 16. One support W is placed on each support 332. In the housing 331, the index robot 220, the first buffer robot 360, and the developing unit robot 482 of the developing module 402 described later move the wafer W to the support 332 in the housing 331. It has openings (not shown) in the direction in which the index robot 220 is provided, the direction in which the first buffer robot 360 is provided, and the direction in which the developing unit robot 482 is provided so as to be able to carry in or take out. The first buffer 320 has a structure generally similar to that of the second buffer 330. However, the housing 321 of the first buffer 320 has an opening in the direction in which the first buffer robot 360 is provided and in the direction in which the applicator robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to an example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable structure, allowing the hand 361 to move along the second direction 14. Arm 362 is coupled to support 363 so as to be linearly movable in a third direction 16 along support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer in the up or down direction. The first buffer robot 360 may simply be provided such that the hand 361 is only biaxially driven along the second direction 14 and the third direction 16.

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and cooling means 353 for cooling the wafer W. As shown in FIG. As the cooling means 353, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) that positions the wafer W on the cooling plate 352. The housing 351 has an index robot 220 so that the developing robot 482 provided to the index robot 220 and the developing module 402 described later can load or unload the wafer W to the cooling plate 352. The provided direction and developing part robot 482 has an opening (not shown) in the provided direction. In addition, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

Application and development module

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The application and development module 400 has an application module 401 and a development module 402. The application module 401 and the developing module 402 are arranged to partition into each other in layers. In one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photoresist such as a photoresist to the wafer W, and a heat treatment process such as heating and cooling of the wafer W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. Accordingly, the resist application chamber 410 and the bake chamber 420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six resist application chambers 410 are provided is shown. A plurality of baking chambers 420 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 420 are provided is shown. Alternatively, however, the bake chamber 420 may be provided in larger numbers.

The transfer chamber 430 is positioned side by side in the first direction 12 with the first buffer 320 of the first buffer module 300. An applicator robot 432 and a guide rail 433 are positioned in the transfer chamber 430. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 includes the baking chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first of the second buffer module 500 described later. The wafer W is transferred between the cooling chambers 520. The guide rail 433 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail 433 guides the applicator robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. Arm 435 is provided in a flexible structure to allow hand 434 to move in the horizontal direction. The support 436 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 435 is coupled to support 436 so as to be linearly movable in third direction 16 along support 436. The support 436 is fixedly coupled to the pedestal 437, and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist application chambers 410 all have the same structure. However, the types of photoresist used in each resist coating chamber 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photo resist on the wafer W. As shown in FIG. The resist application chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the wafer W. The support plate 412 is provided to be rotatable. The nozzle 413 supplies the photoresist onto the wafer W placed on the support plate 412. The nozzle 413 has a circular tubular shape, and can supply the photoresist to the center of the wafer (W). Optionally, the nozzle 413 has a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W on which the photoresist is applied.

The bake chamber 420 heat-treats the wafer (W). For example, the bake chambers 420 may be a prebake process or a photoresist that heats the wafer W to a predetermined temperature and removes organic matter or moisture from the surface of the wafer W before applying the photoresist. A soft bake process or the like performed after coating on W) is performed, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with cooling means 423 such as cooling water or thermoelectric elements. The heating plate 422 is also provided with heating means 424 such as hot wires or thermoelectric elements. The cooling plate 421 and the heating plate 422 may be provided in one bake chamber 420, respectively. Optionally, some of the baking chambers 420 may have only a cooling plate 421 and others may have only a heating plate 422.

The developing module 402 is a developing process of removing a part of the photoresist by supplying a developing solution to obtain a pattern on the wafer W, and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process. It includes. The developing module 5402 has a developing chamber 460, a baking chamber 470, and a conveying chamber 480. The developing chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. Therefore, the developing chamber 460 and the baking chamber 470 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 may be provided, and a plurality of developing chambers 460 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six developing chambers 460 are provided is shown. A plurality of baking chambers 470 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 470 are provided is shown. However, the baking chamber 470 may alternatively be provided in larger numbers.

The transfer chamber 480 is positioned side by side in the first direction 12 with the second buffer 330 of the first buffer module 300. The developer robot 482 and the guide rail 483 are positioned in the transfer chamber 480. The transfer chamber 480 has a generally rectangular shape. The developing unit robot 482 includes the bake chambers 470, the developing chambers 460, the second buffer 330 and the cooling chamber 350 of the first buffer module 300, and the second buffer module 500. The wafers W are transferred between the second cooling chambers 540. The guide rail 483 is disposed so that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing unit robot 482 to linearly move in the first direction 12. The developing unit robot 482 has a hand 484, an arm 485, a support 486, and a base 487. The hand 484 is fixedly mounted to the arm 485. Arm 485 is provided in a flexible structure to allow hand 484 to move in the horizontal direction. The support 486 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 485 is coupled to support 486 such that it is linearly movable in third direction 16 along support 486. The support 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The developing chambers 460 all have the same structure. However, the types of the developer used in each of the developing chambers 460 may be different from each other. The developing chamber 460 removes the light irradiated region of the photoresist on the wafer W. At this time, the area irradiated with light in the protective film is also removed. Depending on the kind of photoresist that is optionally used, only the regions of the photoresist and the protective film to which light is not irradiated may be removed.

The developing chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is located in the housing 461 and supports the wafer (W). The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the wafer W placed on the support plate 462. The nozzle 463 has a circular tubular shape and can supply the developer to the center of the wafer W. As shown in FIG. Optionally, the nozzle 463 has a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 463 may be provided as a slit. In addition, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning solution such as deionized water to clean the surface of the wafer W to which the developing solution is supplied.

The bake chamber 470 heat-treats the wafer (W). For example, the bake chambers 470 are heated after each bake process and a hard bake process that heats the wafer W after the post-baking process that heats the wafer W before the developing process is performed, and after the developing process is performed. And a cooling process for cooling the finished substrate. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with cooling means 473, such as cooling water or thermoelectric elements. Alternatively, the heating plate 472 is provided with heating means 474, such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may each be provided in one bake chamber 470. Optionally, some of the baking chambers 470 may have only a cooling plate 471 and others may have only a heating plate 472.

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the developing module 402 may have the same chamber arrangement when viewed from the top.

(Second buffer module)

The second buffer module 500 is provided as a passage through which the wafer W is transported between the application and development module 400 and the pre-exposure processing module 600. In addition, the second buffer module 500 performs a predetermined process on the wafer W, such as a cooling process or an edge exposure process. The second buffer module 500 controls the frame 510, the buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560. Have The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located in the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the developing module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged along the third direction 16. As viewed from the top, the buffer 520 is disposed along the conveyance chamber 430 and the first direction 12 of the application module 401. The edge exposure chamber 550 is disposed spaced apart from the buffer 520 or the first cooling chamber 530 in a second distance 14.

The second buffer robot 560 transfers the wafer W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform subsequent processing on the wafers W on which the processing is performed in the coating module 401. The first cooling chamber 530 cools the wafer W on which the process is performed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes an edge of the wafers W on which the cooling process is performed in the first cooling chamber 530. The buffer 520 temporarily stores the wafer W before the wafers W having been processed in the edge exposure chamber 550 are transferred to the pretreatment module 601 described later. The second cooling chamber 540 cools the wafers W before the wafers W having been processed in the post-processing module 602 described later are transferred to the developing module 402. The second buffer module 500 may further have a buffer added to a height corresponding to the developing module 402. In this case, the wafers W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402.

(Before and After Exposure Processing Module)

The pre- and post-exposure processing module 600 processes processes required between the resist coating process and the exposure process and between the exposure process and the developing process. For example, when the exposure apparatus 900 performs a liquid immersion exposure process, the pre and post-exposure processing module 600 may process a process of applying a protective film that protects the photoresist film applied to the wafer W during the liquid immersion exposure. . In addition, the pre and post-exposure processing module 600 may perform a process of cleaning the wafer W after the exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre-exposure treatment module 600 may process the post-exposure bake process.

The pre- and post-exposure processing module 600 includes a pretreatment module 601 and a post-processing module 602. The pretreatment module 601 performs a process of processing the wafer W before performing the exposure process, and the post-processing module 602 performs a process of processing the wafer W after the exposure process. The pretreatment module 601 and the aftertreatment module 602 are arranged to partition into one another. In one example, the pretreatment module 601 is located on top of the aftertreatment module 602. The pretreatment module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film applying chamber 610, a baking chamber 620, and a transfer chamber 630. The protective film applying chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. Therefore, the protective film applying chamber 610 and the baking chamber 620 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 630 interposed therebetween. A plurality of protective film applying chambers 610 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of protective film applying chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of baking chambers 620 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of baking chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned side by side in the first direction 12 with the first cooling chamber 530 of the second buffer module 500. The pretreatment robot 632 is located in the transfer chamber 630. The transfer chamber 630 has a generally square or rectangular shape. The pretreatment robot 632 is provided between the protective film applying chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500, and the first buffer 720 of the interface module 700 described later. The wafer W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. Arm 634 is provided in a stretchable and rotatable structure. Arm 634 is coupled to support 635 to be linearly movable in a third direction 16 along support 635.

The protective film applying chamber 610 applies a protective film on the wafer W to protect the resist film during the liquid immersion exposure. The protective coating chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with an open top. The support plate 612 is located in the housing 611 and supports the wafer (W). The support plate 612 is provided to be rotatable. The nozzle 613 supplies a protective liquid for forming a protective film onto the wafer W placed on the support plate 612. The nozzle 613 has a circular tubular shape and can supply a protection liquid to the center of the wafer W. As shown in FIG. Optionally, the nozzle 613 has a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 613 may be provided as a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. As the protective liquid, a material having a low affinity with the photoresist and water may be used. For example, the protective liquid may contain a fluorine-based solvent. The protective film applying chamber 610 rotates the wafer W placed on the support plate 612 and supplies the protective liquid to the center area of the wafer W. FIG.

The baking chamber 620 heat-treats the wafer W on which the protective film is applied. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with cooling means 623, such as cooling water or thermoelectric elements. Alternatively, the heating plate 622 is provided with heating means 624 such as hot wire or thermoelectric element. The heating plate 622 and the cooling plate 621 may each be provided in one bake chamber 620. Optionally, some of the bake chambers 620 may have only a heating plate 622 and others may have only a cooling plate 621.

The aftertreatment module 602 has a cleaning chamber 660, a post exposure bake chamber 670, and a transfer chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure bake chamber 670 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 680 interposed therebetween. The cleaning chamber 660 may be provided in plural and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 670 may be provided after the exposure, and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned side by side in the first direction 12 with the second cooling chamber 540 of the second buffer module 500 when viewed from the top. The transfer chamber 680 has a generally square or rectangular shape. The post-processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 includes cleaning chambers 660, post-exposure bake chambers 670, a second cooling chamber 540 of the second buffer module 500, and a second of the interface module 700 described below. The wafer W is transported between the buffers 730. The post-processing robot 682 provided to the post-processing module 602 may be provided in the same structure as the pre-processing robot 632 provided to the pre-processing module 601.

The cleaning chamber 660 cleans the wafer W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the wafer W. As shown in FIG. The support plate 662 is provided to be rotatable. The nozzle 663 supplies the cleaning liquid onto the wafer W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the center region of the wafer W while rotating the wafer W placed on the support plate 662. Optionally, while the wafer W is being rotated, the nozzle 663 can be moved linearly or rotationally from the center region of the wafer W to the edge region.

The post-exposure bake chamber 670 heats the wafer W on which the exposure process is performed using far ultraviolet rays. The post-exposure bake process heats the wafer W to amplify an acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with heating means 674, such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with cooling means 673, such as cooling water or thermoelectric elements. In addition, a bake chamber may optionally be provided with only the cooling plate 671.

As described above, the pretreatment module 601 and the post-treatment module 602 are provided to be completely separated from each other in the pre- and post-exposure processing module 600. In addition, the transfer chamber 630 of the pretreatment module 601 and the transfer chamber 680 of the post-treatment module 602 may be provided in the same size so as to completely overlap each other when viewed from the top. In addition, the protective film applying chamber 610 and the cleaning chamber 660 may be provided in the same size to each other when completely overlapping each other when viewed from the top. In addition, the bake chamber 620 and the post-exposure bake chamber 670 may be provided in the same size, so as to completely overlap each other when viewed from the top.

(Interface module)

The interface module 700 transfers the wafer W between the pre-exposure processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located in the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and disposed to be stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601, and the second buffer 730 is disposed at a height corresponding to the postprocessing module 602. As viewed from the top, the first buffer 720 is arranged in a line along the conveyance chamber 630 and the first direction 12 of the pretreatment module 601, and the second buffer 730 is the post-processing module 602. Are positioned to be arranged in a line along the conveyance chamber 630 and the first direction 12.

The interface robot 740 is positioned to be spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730, and the exposure apparatus 900. The interface robot 740 has a structure generally similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the wafers W processed in the pretreatment module 601 before they are moved to the exposure apparatus 900. The second buffer 730 temporarily stores the wafers W processed in the exposure apparatus 900 before moving to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed in the housing 721 and are provided spaced apart from each other along the third direction 16. One support W is placed on each support 722. The housing 721 is a direction and pretreatment robot provided with an interface robot 740 so that the interface robot 740 and the pretreatment robot 632 can carry or unload the wafer W into the support 722 into the housing 721. 632 has an opening (not shown) in the direction provided. The second buffer 730 has a structure generally similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has openings (not shown) in the direction in which the interface robot 740 is provided and in the direction in which the post-processing robot 682 is provided. The interface module may be provided with only the buffers and the robot as described above without providing a chamber for performing a predetermined process on the wafer.

(Process order)

Next, an example of performing a process using the substrate processing apparatus 1 of FIG. 1 will be described with reference to FIGS. 5A and 5B. 5A and 5B are flowcharts illustrating an example in which a process is performed on the wafer W in the substrate processing apparatus 1.

The container 20 in which the wafers W are stored is placed on the mounting table 120 of the load port 100 (step S112). The door of the container 20 is opened by the door opener. The index robot 220 takes out the wafer W from the container 20 and carries it to the second buffer 330 (step S114).

The first buffer robot 360 carries the wafer W stored in the second buffer 330 to the first buffer 320 (step S116). The application unit robot 432 removes the wafer W from the first buffer 320 and transports the wafer W to the bake chamber 420 of the application module 401 (step S118). The bake chamber 420 sequentially performs the prebaking and cooling processes (step S120). The application part robot 432 removes the wafer W from the bake chamber 420 and transfers it to the resist application chamber 410 (step S122). The resist coating chamber 410 applies a photo resist on the wafer W (step S124). The application part robot 432 then transfers the wafer W from the resist application chamber 410 to the bake chamber 420 (step S126). The baking chamber 420 performs a soft bake process on the wafer W (step S128).

The applicator robot 432 removes the wafer W from the bake chamber 420 and transfers the wafer W to the first cooling chamber 530 of the second buffer module 500 (step S130). In the first cooling chamber 530, a cooling process is performed on the wafer W (step S132). The wafer W on which the process is performed in the first cooling chamber 530 is transferred to the edge exposure chamber 550 by the second buffer robot 560 (step S134). The edge exposure chamber 550 performs a process of exposing the edge region of the wafer W (step S136). The wafer W having completed the process in the edge exposure chamber 550 is transferred to the buffer 520 by the second buffer robot 560 (step S138).

The preprocessing robot 632 removes the wafer W from the buffer 520 and transports the wafer W to the protective film applying chamber 610 of the pretreatment module 601 (step S140). The protective film application chamber 610 applies a protective film on the wafer W (step S142). Thereafter, the preprocessing robot 632 transfers the wafer W from the protective film applying chamber 610 to the baking chamber 620 (step S144). The baking chamber 620 performs heat treatment such as heating and cooling on the wafer W (step S146).

The preprocessing robot 632 removes the wafer W from the baking chamber 620 and transports the wafer W to the first buffer 720 of the interface module 700 (step S148). The interface robot 740 carries the wafer W from the first buffer 720 to the exposure apparatus 900 (step S150). The exposure process is performed with respect to the wafer W in the exposure apparatus 900 (step S152). Thereafter, the interface robot 740 carries the wafer W to the second buffer 730 in the exposure apparatus 900 (step S154).

The post-processing robot 682 removes the wafer W from the second buffer 730 and transports it to the cleaning chamber 660 of the post-processing module 602 (step S156). The cleaning chamber 660 supplies a cleaning liquid to the surface of the wafer W to perform a cleaning process (step S158). After the cleaning of the wafer W using the cleaning liquid is completed, the post-processing robot 682 immediately removes the wafer W from the cleaning chamber 660 and transports the wafer W to the post-exposure bake chamber 670 (step S160). ). In the heating plate 672 of the bake chamber 670 after the exposure, the cleaning liquid adhered to the wafer W is removed by heating the wafer W, and at the same time, the acid generated in the photoresist is amplified, thereby The property change of the resist is completed (step S162). The post-processing robot 682 transfers the wafer W from the post-exposure bake chamber 670 to the second cooling chamber 540 of the second buffer module 500 (step S164). Cooling of the wafer W is performed in the second cooling chamber 540 (step S166).

The developing unit robot 482 removes the wafer W from the second cooling chamber 540 and transfers the wafer W to the bake chamber 470 of the developing module 402 (step S168). The bake chamber 470 sequentially performs the post bake and cooling process (step S170). The developing unit robot 482 removes the wafer W from the bake chamber 470 and transports it to the developing chamber 460 (step S172). The developing chamber 460 supplies a developing solution onto the wafer W to perform a developing process (step S174). The developing unit robot 482 then transfers the wafer W from the developing chamber 460 to the bake chamber 470 (step S176). The bake chamber 470 performs a hard bake process on the wafer W (step S178).

The developing unit robot 482 removes the wafer W from the bake chamber 470 and transports the wafer W to the cooling chamber 350 of the first buffer module 300 (step S180). The cooling chamber 350 performs a process of cooling the wafer W (step S182). The index robot 360 carries the wafer W from the cooling chamber 350 to the container 20 (step S184). In contrast, the developer robot 482 removes the wafer W from the bake chamber 470 and transports the wafer W to the second buffer 330 of the first buffer module 300, and then the container ( 20).

According to the embodiment of FIG. 1, the pre-exposure processing module 600 is disposed separately between the application and development module 400 and the interface module 700. Therefore, the processes required before and after the exposure can be performed immediately before or after the exposure.

In addition, the pre-exposure before and after processing module 600 does not have a separate protective film removal chamber. Therefore, the structure of the before and after exposure processing module 600 is relatively simple, and the time required for the process can be reduced.

In addition, when using a chemically amplified resist, it is important that the post-exposure bake process is performed after the exposure process is completed. According to the embodiment of FIG. 1, the post-exposure bake chamber 670 is provided to the pre-exposure processing module 600. Therefore, before the wafer W is moved to the developing module 402, acid amplification can be rapidly performed in the pre- and post-exposure processing module 600.

In addition, according to the embodiment of FIG. 1, the cleaning chamber 660 only performs cleaning with the cleaning liquid on the wafer W, and does not separately dry the wafer W by supplying a fluid such as a dry gas. The wafer W is dried by heating. For example, wafer drying is performed simultaneously with acid amplification in the bake chamber 670 after exposure. Therefore, the time required for the process can be reduced compared to the case where both the cleaning with the cleaning liquid and the drying with the drying gas are performed in the cleaning chamber 660.

(Variation example)

Next, various modifications of the above-described substrate processing equipment 1 are illustrated.

The index robot 220 may be provided to carry the wafers W directly to the first buffer 320.

In addition, each of the cooling chambers 350 may be disposed in the first buffer module 300 such that a plurality of the cooling chambers 350 are stacked on each other. In addition, a plurality of first cooling chambers 530, second cooling chambers 540, and edge exposure chambers 550 may be provided in the second buffer module 500.

In addition, the cooling chamber 350 may not be provided to the first buffer module 300. In this case, the wafer W is transferred from the application module 401 directly to the first buffer 320 by the applicator robot 432, and the index robot 220 is a wafer stored in the first buffer 320. (W) can be transported to the vessel 20. In addition, the wafer W is transferred from the developing module 402 to the second buffer 330 directly by the developing unit robot 482, and the index robot 220 is stored in the second buffer 330. (W) can be transported to the vessel 20.

In addition, the positions of the second buffer 330 and the cooling chamber 350 in the first buffer module 300 may be changed.

In addition, the application and development module 400 may include only one module instead of the application module 401 and the development module 402 partitioned into layers. In this case, the application chamber, the development chamber, the bake chamber, and the transfer chambers may be provided in one module. In this case, the first buffer 320 and the first buffer robot 360 may not be provided to the first buffer module 300.

In addition, the first cooling chamber 530 may not be provided in the second buffer module 500. In this case, the wafer W having completed the process in the application module 401 is transferred directly to the buffer 520 by the application unit robot 432. Also, the second cooling module 540 may not be provided to the second buffer module 500, and another buffer may be provided. In this case, the wafer W having completed the process in the post-processing module 602 may be transferred to the added buffer by the post-processing robot 682.

In addition, the second buffer module 500 may not be provided, and the pre-exposure processing module 600 and the coating and developing module 400 may be disposed adjacent to each other.

In addition, the pre-exposure before and after processing module 600 may include only one module instead of the pre-processing module 601 and the post-processing module 602 partitioned into layers. In this case, in one module, the protective film applying chamber 610, the bake chamber 620, the cleaning chamber 660, and the post-exposure bake chamber 670 may all be provided.

In addition, after cleaning the wafer W, the cleaning liquid remaining on the wafer may be removed in a baking chamber other than the baking chamber 670 after exposure.

In addition, the cleaning chamber 660 may be further provided with a nozzle for supplying a dry gas in addition to the nozzle for supplying a cleaning liquid. In this case, the cleaning liquid attached to the wafer W may be removed before the wafer W is heated in the baking chamber 670 after exposure.

In addition, the cooling module may not be provided in the aftertreatment module 602. Cooling of the wafer W may only take place in the cooling chamber provided in the second buffer module 500. In this case, optionally, the second buffer module 500 may be arranged such that a plurality of cooling chambers are stacked on each other.

Also, the positions of the preprocessing module 601 and the postprocessing module 602 may be changed from each other. In this case, the coating module 401 and the developing module 402 are disposed to be provided at a height corresponding to the pretreatment module 601 and the post-treatment module 602, respectively.

Also, optionally, the aftertreatment module 602 may be provided with a protective film removing chamber for removing the protective film after the exposure process. In this case, the protective film provided on the wafer W can be removed before the development process or the ashing process is performed.

In addition, when the exposure apparatus 900 performs the process by a method other than the liquid immersion exposure method, the protective film applying unit 3000 may not be provided in the pretreatment module 601. In this case, the baking chamber 620 may not be optionally provided. In this case, the pre-exposure pretreatment module 600 may be provided as the post-treatment module 602 alone without the pretreatment module 601.

In addition, when the exposure apparatus 900 does not perform the process using the far-infrared light source, the post-exposure bake chamber 670 may not be provided to the post-processing module 602.

In addition, the edge exposure chamber 550 may be provided to the interface module 700. In addition, the edge exposure process may be performed after the process of applying a protective film on the wafer, between the exposure process and the process of cleaning the wafer, or may be performed between the post-exposure bake process and the development process.

6A through 6G sequentially illustrate a process of forming a pattern on a thin film on a wafer (W).

First, a thin film 12 is deposited on the wafer W in a deposition apparatus (not shown) (FIG. 6A), and the wafer W is conveyed to the substrate processing facility 1 of this embodiment. In the application module 401, the photoresist 14 is applied onto the wafer W (Fig. 6B). As described above, in the application module 401, a baking process and the like are further performed in addition to the application of the photoresist 14. The wafer W is then coated with a protective film 16 on the wafer W in the pretreatment module 601 of the pre-exposure processing module 600 (FIG. 6C). As described above, a process such as a baking process is further performed in the pretreatment module 601. The wafer W is conveyed to the exposure apparatus 900. The exposure apparatus 900 irradiates light to the selected region 18 on the protective film 16 and the photoresist 14 to change the properties of the protective film 16 and the photoresist 14 provided in the region (FIG. 6D). ). Thereafter, the post-processing module 602 of the pre-exposure before and after processing module 600 performs a cleaning process and a post-exposure bake process. During the post-exposure bake process, the cleaning liquid remaining on the wafer W is removed. The wafer W is then removed from the protective film 16 and the photoresist 14 of the region 18 in which the properties of the wafer W are changed (FIG. 6E). As described above, in the developing module 402, a process such as a baking process is further performed in addition to the developing process. The wafer W is then conveyed to an etching apparatus (not shown). In the etching apparatus, the exposed region 13 of the thin film is removed by the etching liquid (FIG. 6F). The wafer W is then conveyed to an ashing device (not shown). In the ashing apparatus, the photoresist 14 and the protective film 16 remaining on the thin film 12 are removed (FIG. 6G). Other processes may be performed, such as cleaning the wafer W as needed while the wafer W is moved between the deposition apparatus, substrate processing apparatus 1, etching apparatus, and ashing apparatus.

1 to 4 are schematic views showing a substrate processing apparatus according to an embodiment of the present invention.

5A and 5B are flowcharts sequentially illustrating a process of performing a process in the substrate processing apparatus of FIG. 1.

6A through 6G sequentially illustrate a process of forming a pattern on a wafer.

Explanation of symbols on the main parts of the drawings

20: container 100: loading port

200: index module 300: first buffer module

400: application and development module 401: application module

402: developing module 500: second buffer module

600: pre and post exposure module 601: pretreatment module

602 post-processing module 700 interface module

900: exposure apparatus

Claims (33)

A load port on which a container in which the substrates are accommodated is placed; A first buffer module having a buffer for temporarily storing substrates; An index module for transporting a substrate between the load port and the first buffer module; An application and development module for performing a photoresist application and development process on the substrate; A second buffer module having a buffer for temporarily storing the substrates; An exposure pre- and post-processing module for performing a process required for the substrate between the photoresist coating process and the exposure process and between the exposure process and the developing process; And An interface module connected with the exposure apparatus; The load port, the index module, the first buffer module, the coating and developing module, the second buffer module, the pre-exposure processing module, and the interface module are arranged in a line along a first direction. Substrate processing equipment. The method of claim 1, The pre- and post-exposure processing module includes a protective film applying chamber for applying a protective film on a substrate. The method of claim 2, The processing module before and after the exposure further comprises a cleaning chamber for cleaning the substrate. The method of claim 3, wherein The pre-exposure before and after processing module includes a pretreatment module and a post-treatment module partitioned into layers; And the protective film applying chamber is disposed in the pretreatment module, and the cleaning chamber is disposed in the post-treatment module. The method of claim 4, wherein The pretreatment module, A baking chamber performing a baking process on the substrate; Further comprising a pre-processing robot for transporting the substrate between the baking chamber and the protective film applying chamber, The post-processing module, A post-exposure bake chamber for performing a post-exposure bake process on the substrate; And a post-processing robot for transporting the substrate between the cleaning chamber and the post exposure bake chamber. The method of claim 5, The second buffer module, An edge exposure chamber exposing the edge of the substrate; And a second buffer robot for conveying the substrate with respect to the edge exposure chamber. The method of claim 5, And the second buffer module further comprises a cooling chamber for cooling the substrate. The method of claim 5, The application and development module includes an application module and a development module partitioned into layers from each other, The coating module, An application chamber for applying a photoresist on the substrate; A bake chamber to heat-treat the substrate; An application robot for transporting a substrate between the bake chamber and the application chamber of the application module, The developing module, A developing chamber which performs a developing process on the substrate; A bake chamber to heat-treat the substrate; And a developing robot for transporting a substrate between the bake chamber and the developing chamber of the developing module. The method of claim 8, And the coating module and the pretreatment module are disposed at the same height, and the developing module and the post-treatment module are disposed at the same height. The method of claim 9, The second buffer module, A cooling chamber for performing a cooling process on the substrate, The buffer of the second buffer module is disposed at a height corresponding to the coating module, And the cooling chamber is disposed at a height corresponding to the developing module. The method of claim 5, The interface module, A first buffer disposed at a height corresponding to the pretreatment module to temporarily store a substrate; A second buffer disposed at a height corresponding to the post-processing module and temporarily storing the substrate, and And an interface robot for transporting the substrate between the first buffer and the exposure apparatus and between the second buffer and the exposure apparatus. The method of claim 5, The protective film applying chamber, the transfer chamber provided with the pretreatment robot, and the bake chamber of the pretreatment module are sequentially disposed in a second direction perpendicular to the first direction when viewed from the top, And the cleaning chamber, the transfer chamber in which the post-processing robot is disposed, and the post-exposure bake chamber are sequentially arranged in the second direction when viewed from the top. 13. The method of claim 12, And each of the transfer chamber provided with the pretreatment robot and the transfer chamber provided with the post-treatment robot are arranged in parallel with the buffer of the second buffer module along the first direction when viewed from the top. The method of claim 13, The application and development module includes an application module and a development module partitioned into layers from each other, The coating module, An application chamber for applying a photoresist on the substrate; A bake chamber to heat-treat the substrate; A transfer chamber provided with an application robot for transporting a substrate between the bake chamber and the application chamber of the application module, The developing module, A developing chamber which performs a developing process on the substrate; A bake chamber to heat-treat the substrate; A transfer chamber provided with a developing robot for transporting a substrate between the bake chamber and the developing chamber of the developing module, And a conveyance chamber provided with the applicator robot and a conveyance chamber provided with the developing robot are arranged side by side along the first direction with the buffer of the second buffer module when viewed from the top. The method of claim 13, The second buffer module, An edge exposure chamber exposing the edge of the substrate; Further comprising a second buffer robot for conveying a substrate to the edge exposure chamber, And the buffer of the second buffer module, the second buffer robot, and the edge exposure chamber are sequentially disposed along a second direction perpendicular to the first direction when viewed from the top. A load port on which a container containing substrates is placed; An index module for carrying a substrate against a container placed in the load port; An application and development module for performing a photoresist application and development process on the substrate; And a pre-exposure treatment module for performing a process required for the substrate between the photoresist coating process and the exposure process and between the exposure process and the developing process, And the load port, the index module, the coating and developing module, and the pre-exposure processing module are arranged in a line along a first direction. The method of claim 16, The before and after exposure processing module further comprises a protective film applying chamber for applying a protective film on a substrate. The method of claim 16, The processing module before and after the exposure further comprises a cleaning chamber for cleaning the substrate. The method of claim 16, The pre-exposure before and after processing module includes a pretreatment module and a post-treatment module partitioned into layers; The pretreatment module includes a protective film applying chamber for applying a protective film on a substrate, And the post-processing module comprises a cleaning chamber for cleaning the substrate. The method of claim 19, The pretreatment module, A baking chamber performing a baking process on the substrate; Further comprising a pre-processing robot for transporting the substrate between the baking chamber and the protective film applying chamber, The post-processing module, A post-exposure bake chamber for performing a post-exposure bake process on the substrate; And a post-processing robot for transporting the substrate between the cleaning chamber and the post exposure bake chamber. The method of claim 20, The application and development module includes an application module and a development module partitioned into layers from each other, The coating module, An application chamber for applying a photoresist on the substrate; A bake chamber to heat-treat the substrate; And An application robot for transporting a substrate between the bake chamber and the application chamber of the application module, The developing module, A developing chamber which performs a developing process on the substrate; A bake chamber to heat-treat the substrate; And And a coating robot for transporting the substrate between the bake chamber and the developing chamber of the developing module. The method of claim 21, And the coating module and the pretreatment module are disposed at the same height, and the developing module and the post-treatment module are disposed at the same height. The method of claim 22, The substrate processing apparatus further includes a buffer module disposed between the coating and developing module and the pre-exposure processing module, And the buffer module includes a buffer on which the substrate temporarily stays. The method of claim 23, The protective film applying chamber, the transfer chamber provided with the pretreatment robot, and the bake chamber of the pretreatment module are sequentially disposed in a second direction perpendicular to the first direction when viewed from the top, The cleaning chamber, the transfer chamber in which the post-processing robot is disposed, and the post-exposure bake chamber are sequentially disposed in the second direction when viewed from the top, The application chamber, the transfer chamber provided with the application robot, and the bake chamber of the application module are sequentially disposed in the second direction when viewed from the top, The developing chamber, the transfer chamber provided with the developing robot, and the bake chamber of the developing module are sequentially disposed in the second direction when viewed from the top, The transfer chamber provided with the pretreatment robot, the transfer chamber provided with the post-processing robot, the transfer chamber provided with the application robot, and the transfer chamber provided with the developing robot, respectively, are viewed from the top when the buffer and the first of the buffer module are viewed. Substrate processing equipment, characterized in that arranged side by side along the direction. The method of claim 16, The substrate processing apparatus further includes a buffer module disposed between the coating and developing module and the pre-exposure processing module, And said buffer module comprises a buffer for temporarily storing a substrate. The method of claim 16, The substrate processing equipment, A first buffer module disposed between the index module and the application and development module; Further comprising a second buffer module disposed between the application and development module and the pre-exposure processing module, And said first buffer module and said second buffer module each have a buffer for temporarily storing a substrate. The method of claim 16, The substrate processing apparatus further includes an interface module connected to the exposure apparatus, And the interface module is disposed opposite to the coating and developing module based on the pre-exposure processing module. In the method of processing a substrate, Performing a process of applying photoresist on the substrate; Performing a process of applying a protective film on the substrate to which the photoresist is applied; Performing a liquid immersion exposure process on the substrate coated with the protective film; Performing a process of cleaning the substrate on which the immersion exposure has been performed; And Performing a development process on the substrate. 29. The method of claim 28, And performing a post-exposure bake process on the substrate, between the cleaning of the substrate and the developing process on the substrate. 30. The method of claim 29, The process of cleaning the substrate is made by supplying a cleaning liquid to the substrate, The removal of the cleaning liquid remaining on the substrate is performed by heating the substrate without supplying a fluid. 30. The method of claim 29, The process of cleaning the substrate is to wash the substrate using a cleaning liquid, The process of removing the cleaning liquid remaining on the substrate is performed after the post-exposure bake process performed immediately after the process of cleaning the substrate. 29. The method of claim 28, And said protective film is removed during or after said developing process. 29. The method of claim 28, A portion of the protective film is removed in the developing step, and a part of the protective film is removed in the ashing step.

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