KR101109074B1 - System and method for treating substrates - Google Patents

Abstract

The present invention provides a substrate processing system and a substrate processing method. The substrate processing system has a coating unit, a pre-exposure processing unit, and a developing unit. Each unit has a load port and an index module. The pre and post-exposure processing unit has a first module and a second module partitioned into layers. The first module performs a process of applying a protective film on the wafer before exposure. The second module performs a process of cleaning the wafer after exposure and a post-exposure bake process.

Bake after exposure, immersion exposure, protective film, wafer, photolithography

Description

Substrate Processing System and Substrate Processing Method {SYSTEM AND METHOD FOR TREATING SUBSTRATES}

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method used to perform a photolithography process on a wafer.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed. Photolithography processes performed to form patterns play an important role in achieving high integration of semiconductor devices.

In general, an apparatus for performing a photolithography process has an applicator for applying a resist to a wafer, a developer for performing a developing process on an exposed wafer, and a processing module having an interface for inline connection with the exposure apparatus. However, in recent years, as semiconductor devices have been highly integrated, the time required for the exposure process has been increased, and stacking of wafers in the exposure apparatus has increased. This greatly reduces the processing efficiency in the applicator and developer provided in the substrate processing module.

The present invention provides a substrate processing system and method that can improve the efficiency of a photolithography process.

The present invention provides a substrate processing system and method capable of increasing the yield of units performing the coating process and the developing process performed before and after the exposure process.

The present invention provides a substrate processing system having a layout that allows the chambers that perform the process to be efficiently disposed.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing system for performing a photolithography process. The substrate processing system includes a coating unit that performs a coating process on a substrate; An exposure pre- and post-exposure processing unit connected to an exposure apparatus that performs an exposure process and performing a pre-exposure treatment process on a substrate on which the process is performed in the coating unit; And a developing unit which performs a developing process on the substrate on which the process is performed in the pre-exposure before and after processing unit. The coating unit, the pre-exposure processing unit, and the developing unit each include a load port in which a container containing wafers is placed, an index module for inserting a substrate into or removing a substrate from the container, and a predetermined process on the substrate. Process module to perform. The load port, the index module, and the process module are sequentially arranged. The pre-exposure before and after processing unit further includes an interface module connected to the exposure apparatus, and the interface module is disposed on the opposite side of the index module with respect to the process module.

In one embodiment, the process module of the pre-exposure before and after processing unit includes a first module and a second module partitioned into layers. The first module may include a protective coating chamber for applying a protective film on a substrate, a baking chamber for performing heat treatment on the substrate, and a first robot for transporting the substrate between the protective coating chamber and the baking chamber. The second module may include a cleaning chamber for cleaning the substrate. The second module may further include a post-exposure bake chamber that performs a post-exposure bake process on the exposed substrate, and a second robot that transports the substrate between the cleaning chamber and the post-exposure bake chamber.

The pre-exposure before and after processing unit may further include a buffer module disposed between the index module and the process module. The buffer module may include a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate, and a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate. . Each of the first buffer and the second buffer may be disposed to be stacked on each other, and may include a plurality of supports on which a substrate is placed. In addition, the buffer module of the pre-exposure processing unit may further include a buffer robot for transporting the substrate between the first buffer and the second buffer. The first buffer and the second buffer may be arranged side by side in the vertical direction. The buffer module may further include a cooling chamber disposed at a height corresponding to the first module and cooling the substrate.

The interface module is a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate, a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate, and the first buffer It may include a buffer and the exposure apparatus, and an interface robot for transporting the substrate between the second buffer and the exposure apparatus.

The coating unit may further include an edge exposure module, wherein the edge exposure module may be disposed on an opposite side of the index module with respect to the process module.

The present invention also provides a pre-exposure treatment unit for performing a process required before and after exposure to a substrate to which a photoresist is applied. The pre-exposure before and after processing unit includes a load port in which a container containing substrates is placed, an index module for removing a substrate from the container or inserting the substrate into the container, a process module for performing a process on the substrates, and an interface connected to the exposure apparatus. Contains modules The load port, the index module, the process module, and the interface module are sequentially disposed along a first direction, and the process module includes a protective film applying chamber for applying a protective film on a substrate. The process module may further include a cleaning chamber for cleaning the substrate. The process module may further include a baking chamber that performs heat treatment on the substrate. The process module may further include a post-exposure bake chamber that performs a post-exposure bake process on the exposed substrate.

The process module may include a first module and a second module disposed to be partitioned into layers, wherein the protective film applying chamber may be disposed in the first module, and the cleaning chamber may be disposed in the second module. The process module is disposed in the first module and the bake chamber for performing heat treatment on the substrate and the first robot disposed in the first module and transports the substrate between the protective film applying chamber and the bake chamber, the second module And a post-exposure bake chamber configured to perform a post-exposure bake process on the exposed and disposed substrates, and a second robot disposed in the second module and transferring the substrate between the cleaning chamber and the post-exposure bake chamber.

The pre-exposure before and after processing unit further includes a buffer module disposed between the index module and the process module, wherein the buffer module is disposed at a height corresponding to the first module and temporarily stores a substrate. It may include a second buffer disposed at a height corresponding to the second module to temporarily store the substrate. Each of the first buffer and the second buffer may be disposed to be stacked on each other, and may include a plurality of supports on which a substrate is placed. The buffer module of the pre-exposure before and after processing unit may further include a buffer robot that transports the substrate between the first buffer and the second buffer. The first buffer and the second buffer may be arranged side by side in the vertical direction. The buffer module may further include a cooling chamber disposed at a height corresponding to the first module and cooling the substrate.

The interface module may include a first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; A second buffer disposed at a height corresponding to the second module and temporarily storing a substrate; And an interface robot for transporting a substrate between the first buffer and the exposure apparatus and between the second buffer and the exposure apparatus. Each of the first buffer and the second buffer may be disposed to be stacked on each other, and may include a plurality of supports on which a substrate is placed.

According to another example of the invention, the pre-exposure before and after processing unit is a load port in which a container in which the substrates are placed, an index module for putting a substrate into or withdrawing the substrate from the container, a process module for performing a process on the substrates, A buffer module disposed between the index module and the process module, and an interface module connected to the exposure apparatus. The load port, the index module, the buffer module, the process module, and the interface module are sequentially disposed along a first direction, and the process module includes a first module and a second module partitioned into layers. . The first module may be configured to transfer a substrate between a protective film applying chamber for applying a protective film on a substrate, a baking chamber for performing heat treatment on the substrate, the protective film applying chamber, the bake chamber, the buffer module, and the interface module. The robot includes a transfer chamber provided. The second module transfers a substrate between a cleaning chamber for cleaning a substrate, a post-exposure bake chamber for performing a post-exposure bake process on the substrate, the cleaning chamber, the post-exposure bake chamber, the buffer module, and the interface module. The second robot includes a transfer chamber provided.

The protective film applying chamber, the transfer chamber provided with the first robot, and the bake chamber are sequentially disposed along a second direction perpendicular to the first direction, and the cleaning chamber, the transfer chamber provided with the second robot, and the exposure The post bake chamber may be sequentially arranged along the second direction.

The first module is disposed above the second module, the buffer module is disposed at a height corresponding to the first module and the first buffer for temporarily storing the substrate, at a height corresponding to the second module And a cooling chamber configured to cool the substrate, wherein the first buffer and the cooling chamber are arranged in a line in the vertical direction, and the first buffer is viewed from above and the conveying chamber of the first module and the first direction. It can be arranged along the line.

The buffer module further includes a second buffer disposed at a height corresponding to the second module and temporarily transferring the substrate between the first buffer and the second buffer, wherein the buffer robot carries the substrate between the first buffer and the first buffer. And the buffer robot may be disposed along a second direction perpendicular to the first direction when viewed from the top.

The present invention also provides a method of treating a substrate. The substrate treating method includes performing a process of applying a photoresist on a substrate, performing a process of applying a protective film on the substrate on which the photoresist is applied, and performing a liquid immersion exposure process on the substrate on which the protective film is applied. Performing a process of cleaning the substrate on which the liquid immersion exposure has been performed, and performing a developing process on the substrate. The process of applying the protective film and the performing of the cleaning process are performed in a pre-exposure processing unit connected inline with an exposure apparatus that performs the liquid immersion exposure process, and performs the process of applying the photoresist. The step of performing is performed in an application unit disposed separately from the pre-exposure treatment unit, and the step of performing the developing process is performed in an application unit disposed separately from the pre-exposure treatment unit.

The substrate processing method may further include performing a post-exposure bake process on the substrate between the process of cleaning the substrate and the process of developing the substrate. The process of cleaning the substrate is performed by supplying a cleaning liquid to the substrate, and the cleaning liquid remaining on the substrate may be removed during the post-exposure bake process.

The process of cleaning the substrate may be performed in the post-exposure bake process performed immediately after the process of cleaning the substrate, and the process of removing the cleaning liquid remaining on the substrate using the cleaning liquid.

The protective film may be removed from the outside of the processing unit before and after exposure. A part of the protective film may be removed in the developing process, and the other part may be removed in the ashing process.

According to the present invention, a photolithography process can be performed efficiently.

According to the present invention, the yield can be increased in the coating unit and the developing unit.

According to the present invention, when a chemically amplified photoresist is used, the post-exposure bake process can be processed in a short time after the exposure process.

According to the present invention, since the cleaning liquid remaining on the substrate can be removed together with acid amplification in the bake unit after exposure, a separate drying nozzle is not provided in the cleaning chamber, thereby reducing the time required for the process.

According to the present invention, since the protective film is removed in a subsequent developing step and an ashing step without providing a separate protective film removing chamber in the pre-exposure processing unit, the time required for the process can be reduced.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 14G. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

The system of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the system of this embodiment is used to perform a coating process, a developing process, and a pre-exposure treatment process required before and after the liquid immersion exposure to the substrate. Hereinafter, a case where a wafer is used as a substrate will be described.

1 schematically shows a substrate processing system 1 according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing system 1 has a coating unit 3000, a pre-exposure before and after processing unit 4000, and a developing unit 5000. The coating unit 3000, the before and after exposure processing unit 4000, and the developing unit 5000 are each disposed separately from each other. The wafer W is transported between the coating unit 3000, the exposure before and after processing unit 4000, and the developing unit 5000 by the automatic transfer device 1000 or the operator. The wafer W is moved in the state accommodated in the container (2000 of FIG. 2). At this time, the container 2000 has a structure that can be sealed from the outside. For example, as the container 2000, a front open unified pod (FOUP) having a door in front may be used. Below, the case where the coating unit 3000, the exposure before-and-after processing unit 4000, and the developing unit 5000 are arrange | positioned in parallel with each other in the longitudinal direction is demonstrated. In contrast, however, the coating unit 3000, the pre-exposure treatment unit 4000, and the developing unit 5000 may be disposed in a state in which their longitudinal directions are not parallel to each other.

The coating unit 3000 performs a first process on the wafer (W). The first process includes a process of applying a photoresist such as photoresist to the wafer W and a heat treatment process such as heating and cooling of the wafer W before and after the resist application process.

The developing unit 5000 performs a second process on the wafer W. FIG. The second process includes a developing process of removing a part of the photoresist by supplying a developer to obtain a pattern on the wafer W, and a heat treatment process such as heating and cooling performed on the wafer W before and after developing. .

The pre-exposure before and after processing unit 4000 is arranged to be connected inline with the exposure apparatus 9000. The pre- and post-exposure processing unit 4000 includes a third process. The third process is a process performed between the first process and the exposure process and between the exposure process and the second process, and includes a process required before and after exposure. For example, when the exposure apparatus 9000 performs the immersion exposure process, the third process may include applying a protective film that protects the photoresist film applied to the wafer W during the immersion exposure. In addition, the third process may include a process of cleaning the wafer W after exposure. In addition, when the coating process is performed using a chemically amplified resist and the exposure process is performed using a deep ultraviolet (DUV) light source, the third process may include a post-exposure bake process.

Hereinafter, each unit will be described in detail.

(Application unit)

2 to 4 are diagrams schematically showing the structure of the coating unit 3000. 2 is a view of the coating unit 3000 from above, FIG. 3 is a view of the coating unit 3000 of FIG. 2 along the 'A' direction, and FIG. 4 is a view of the coating unit 3000 of FIG. It is a view seen along the B 'direction.

2 to 4, the coating unit 3000 includes a load port 3100, an index module 3200, a buffer module 3300, a process module 3400, and an edge exposure module 3500. The load port 3100, the index module 3200, the buffer module 3300, the process module 3400, and the edge exposure module 3500 are sequentially arranged in one direction. Hereinafter, the direction in which the load port 3100, the index module 3200, the buffer module 3300, the process module 3400, and the edge exposure module 3500 are disposed is referred to as a first direction 12 and is viewed from above. When viewed, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the first direction 12 and the second direction 14, respectively, is referred to as a third direction 16.

The load port 3100 has a mounting table 3120 on which a container 2000 in which wafers W are accommodated is placed. The mounting table 3120 may be provided in plural, and the mounting tables 3120 may be arranged in a line along the second direction 14. In FIG. 2 four mounting tables 3120 were provided.

The index module 3200 transfers the wafer W between the container 2000 placed on the mounting table 3120 of the load port 3100 and the buffer module 3300. The index module 3200 has a frame 3210, an index robot 3220, and a guide rail 3230. The frame 3210 is generally provided in the shape of an empty cuboid and is disposed between the load port 3100 and the buffer module 3300. The frame 3210 of the index module 3200 may be provided at a height lower than that of the frame 3310 of the buffer module 3300, which will be described later. The index robot 3220 and the guide rail 3230 are disposed in the frame 3210. The index robot 3220 drives four axes so that the hand 3221, which directly handles the wafer W, is movable and rotated in the first direction 12, the second direction 14, and the third direction 16. This has a possible structure. The index robot 3220 has a hand 3221, an arm 3222, a support 3223, and a pedestal 3224. The hand 3221 is fixed to the arm 3222. Arm 3222 is provided in a stretchable and rotatable structure. The support 3223 is disposed in the longitudinal direction along the third direction 16. Arm 3222 is coupled to support 3223 to be movable along support 3223. The support 3223 is fixedly coupled to the pedestal 3224. The guide rail 3230 is provided such that its longitudinal direction is disposed along the second direction 14. The pedestal 3224 is coupled to the guide rail 3230 so as to be linearly movable along the guide rail 3230. In addition, although not shown, the frame 3210 is further provided with a door opener for opening and closing the door of the container 2000.

Referring to FIG. 3, the buffer module 3300 may include a frame 3310, a first buffer 3320, a second buffer 3330, a first cooling chamber 3340, a second cooling chamber 3350, and a buffer robot. Has 3360. The frame 3310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 3200 and the process module 3400. The first buffer 3320, the second buffer 3330, the first cooling chamber 3340, the second cooling chamber 3350, and the buffer robot 3360 are located in the frame 3310. The second cooling chamber 3350, the second buffer 3330, the first cooling chamber 3340, and the first buffer 3320 are sequentially disposed along the third direction 16 from below. The first cooling chamber 3340 and the first buffer 3320 are positioned at a height corresponding to the first module 3401 of the process module 3400, which will be described later, and the second cooling chamber 3350 and the second buffer 3330 may be used. ) Is positioned at a height corresponding to the second module 3402 of the process module 3400 described later. The buffer robot 3360 is positioned at a predetermined distance from the second buffer 3330, the second cooling chamber 3350, the first buffer 3320, and the first cooling chamber 3340 in the second direction 14. .

The second buffer 3330 and the first buffer 3320 temporarily store the plurality of wafers W, respectively. The second buffer 3330 has a housing 3331 and a plurality of supports 3332. The supports 3332 are disposed in the housing 3331 and are spaced apart from each other along the third direction 16. One support W is placed on each support 3332. In the housing 3331, the index robot 3220, the buffer robot 3360, and the second robot 3402 of the second module 3402 described later connect the wafer W to the support 3332 in the housing 3331. It has an opening (not shown) in the direction provided with the index robot 3220, the direction provided with the buffer robot 3360, and the direction provided with the second robot 3402 so as to be able to import or export. The first buffer 3320 has a structure generally similar to that of the second buffer 3330. However, the housing 3321 of the first buffer 3320 has an opening in the direction in which the buffer robot 3360 is provided and in the direction in which the first robot 3432 located in the first module 3401 described later is provided. The number of supports 3322 provided in the first buffer 3320 and the number of supports 3332 provided in the second buffer 3330 may be the same or different. According to an example, the number of supports 3332 provided in the second buffer 3330 may be greater than the number of supports 3322 provided in the first buffer 3320.

The buffer robot 3360 transfers the wafer W between the first buffer 3320 and the second buffer 3330. The buffer robot 3360 has a hand 3331, an arm 3332, and a support 3363. The hand 3331 is fixed to the arm 3302. Arm 3332 is provided in an extensible structure to allow hand 3331 to move along the second direction 14. Arm 3332 is coupled to support 3363 to be linearly movable in a third direction 16 along support 3363. The support 3333 has a length extending from a position corresponding to the second buffer 3330 to a position corresponding to the first buffer 3320. Support 3363 may be provided longer in the up or down direction than this. The buffer robot 3360 may simply be provided such that the hand 3331 is only biaxially driven along the second direction 14 and the third direction 16.

The first cooling chamber 3340 and the second cooling chamber 3350 cool the wafers W, respectively. The second cooling chamber 3350 has a housing 3331 and a cooling plate 3332. The cooling plate 3332 has an upper surface on which the wafer W is placed and cooling means 3353 for cooling the wafer W. As shown in FIG. As the cooling means 3353, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the second cooling chamber 3350 may be provided with a lift pin assembly (not shown) that positions the wafer W on the cooling plate 3332. The housing 3331 is an index robot 3220 so that the index robot 3220 and the second robot 3402 provided in the second module 3402 described later can load or unload the wafer W to the cooling plate 3332. This provided direction and the second robot 3342 have openings (not shown) in the provided direction. In addition, the second cooling chamber 3350 may be provided with doors (not shown) for opening and closing the above-described opening. The first cooling chamber 3340 and the second cooling chamber 3350 have the same structure with each other.

The process module 3400 performs a necessary process before the wafer W is transported to the pre- and post-exposure processing unit 4000. Process module 3400 generally has the shape of a cuboid. The process module 3400 has a first module 3401 and a second module 3402. The first module 3401 and the second module 3402 are arranged to partition into each other in layers. The first module 3401 and the second module 3402 may each be provided to perform the same process. According to an example, the first module 3401 is located on top of the second module 3402.

The first module 3401 has a resist application chamber 3410, a bake chamber 3420, and a transfer chamber 3430. The resist application chamber 3410, the bake chamber 3420, and the transfer chamber 3430 are sequentially disposed along the second direction 14. Accordingly, the resist application chamber 3410 and the bake chamber 3420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 3430 interposed therebetween. A plurality of resist coating chambers 3410 may be provided, and a plurality of resist coating chambers 3410 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example is provided in which six resist application chambers 3410 are provided. A plurality of baking chambers 3420 are provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 3420 are provided is shown. Alternatively, the baking chamber 3420 may be provided in larger numbers.

The transfer chamber 3430 is positioned side by side in the first direction 12 with the first buffer 3320 of the buffer module 3300. The first robot 3432 and the guide rail 3433 are positioned in the transfer chamber 3430. The transfer chamber 3433 has a generally rectangular shape. The first robot 3432 may include baking chambers 3420, resist coating chambers 3400, a first buffer 3320 and a first cooling chamber 3340 of the buffer module 3300, and an edge exposure module (described below). The wafer W is transferred between the first buffer 3520 of the 3500 and the first cooling chamber 3540. The guide rail 3433 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail 3333 guides the first robot 3432 to move linearly in the first direction 12. The first robot 3432 has a hand 3434, an arm 3435, a support 3434, and a pedestal 3437. The hand 3434 is fixedly installed on the arm 3435. Arm 3435 is provided in a flexible structure to allow hand 3434 to move in the horizontal direction. The support 3336 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 3435 is coupled to support 3336 such that it is linearly movable in a third direction 16 along support 3436. The support 3436 is fixedly coupled to the pedestal 3437, and the pedestal 3437 is coupled to the guide rail 3433 to be movable along the guide rail 3433.

The resist application chambers 3410 all have the same structure. However, the kind of photoresist used in each resist coating chamber 3410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist application chamber 3410 applies photoresist on the wafer (W). The resist application chamber 3410 has a housing 3411, a support plate 3412, and a nozzle 3413. The housing 3411 has a cup shape with an open top. The support plate 3412 is located in the housing 3411 and supports the wafer (W). The support plate 3412 is provided to be rotatable. The nozzle 3413 supplies photoresist onto the wafer W placed on the support plate 3412. The nozzle 3413 has a circular tubular shape, and can supply a photoresist to the center of the wafer (W). Optionally, the nozzle 3413 has a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 3413 may be provided as a slit. In addition, the resist coating chamber 3410 may further be provided with a nozzle 3414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W on which the photoresist is applied.

The bake chamber 3420 heat-treats the wafer (W). For example, the bake chambers 3420 may use a prebake process or a photoresist that heats the wafer W to a predetermined temperature and removes organic matter or moisture from the surface of the wafer W before applying the photoresist. A soft bake process or the like performed after coating on the wafer), and a cooling step of cooling the wafer W after each heating step is performed. The bake chamber 3420 has a cooling plate 341 or a heating plate 3342. Cooling plate 341 is provided with cooling means 3423, such as cooling water or thermoelectric elements. Alternatively, the heating plate 3422 is provided with heating means 3424, such as a hot wire or a thermoelectric element. The heating plate 3422 and the cooling plate 341 may be provided in one bake chamber 3420, respectively. Optionally, some of the bake chambers 3420 may have only a heating plate 3422 and others may have only a cooling plate 3421.

The second module 3402 has a resist application chamber 3460, a bake chamber 3470, and a transfer chamber 3480. The resist application chamber 3460, the bake chamber 3470, and the transfer chamber 3480 have the same structure as the resist application chamber 3410, the bake chamber 3420, and the transfer chamber 3430 of the first module 3401. Has a layout. In addition, the transfer chamber 3480 has a second robot 3402, and the second robot 3402 has the same structure as the first robot 3432 provided to the first module 3401. The second robot 3902 may include a resist coating chamber 3460, a baking chamber 3470, a second buffer 3330 and a second cooling chamber 3350 of the buffer module 3300, and an edge exposure module 3500 described later. A wafer W between the second buffer 3530 and the second cooling chamber 3550.

As described above, in the process module 3400, the first module 3401 and the second module 3402 are provided to be separated from each other. In addition, when viewed from the top, the first module 3401 and the second module 3402 may have the same structure and arrangement.

The edge exposure module 3500 performs a process of exposing the edge area of the wafer W. The edge exposure module 3500 includes a frame 3510, a first buffer 3520, a second buffer 3530, a first cooling chamber 3540, a second cooling chamber 3550, an edge exposure robot 3560, It has a first edge exposure chamber 3570, a second edge exposure chamber 3580 (located below 3570 in FIG. 2). Frame 3510 has a rectangular parallelepiped shape. Edge exposure robot 3560, first buffer 3520, first edge exposure chamber 3570, first cooling chamber 3540, second buffer 3530, second edge exposure chamber 3580, and second Cooling chamber 3550 is located within frame 3510. The first buffer 3520, the first edge exposure chamber 3570, and the first cooling chamber 3540 are disposed at a height corresponding to the first module 3401. The second buffer 3530, the second edge exposure chamber 3580, and the second cooling chamber 3550 are disposed at a height corresponding to the second module 3402. The first buffer 3520, the first cooling chamber 3540, the second buffer 3530, and the second cooling chamber 3550 are arranged in a line along the third direction 16 sequentially from above. As viewed from the top, the first buffer 3520 is disposed along the transfer chamber 3430 and the first direction 12 of the first module 3401. The first edge exposure chamber 3570 is disposed spaced apart from the first buffer 3520 and the first cooling chamber 3540 in a second distance 14. The second edge exposure chamber 3580 is disposed to be spaced apart from the second buffer 3530 and the second cooling chamber 3550 by a predetermined distance in the second direction 14. The second edge exposure chamber 3580 and the first edge exposure chamber 3570 are disposed in a line along the third direction 16.

The edge exposure robot 3560 includes a first buffer 3520, a first edge exposure chamber 3570, a first cooling chamber 3540, a second buffer 3530, a second edge exposure chamber 3580, and a second The wafer W is transported between the cooling chambers 3550. The edge exposure robot 3560 is located between the first edge exposure chamber 3570 and the first buffer 3520. The edge exposure robot 3560 may be provided in a structure similar to that of the buffer robot 3360.

The first buffer 3520, the first cooling chamber 3540, and the first edge exposure chamber 3570 perform subsequent processes on the wafers W on which the process is performed in the first module 3401. The first buffer 3520 and the second buffer 3560 each have the same structure as the first buffer 3320 of the buffer module 3300. The first cooling chamber 3540 cools the wafer W on which the process is performed in the first module 3401. The first cooling chamber 3540 has a structure similar to the first cooling chamber 3340 of the buffer module 3300. The first edge exposure chamber 3570 exposes an edge thereof to the wafers W on which the cooling process is performed in the first cooling chamber 3540. The first buffer 3520 temporarily stores the wafers W before the wafers W subjected to the edge exposure process in the first edge exposure chamber 3570 are transported back to the first module 3401.

The second buffer 3530, the second cooling chamber 3550, and the second edge exposure chamber 3580 perform subsequent processes on the wafers W processed in the second module 3402. The second cooling chamber 3550 cools the wafer W on which the process is performed in the second module 3402. The second cooling chamber 3550 has a structure similar to the second cooling chamber 3350 of the buffer module 3300. The second edge exposure chamber 3580 exposes an edge thereof to the wafers W on which the cooling process is performed in the second cooling chamber 3550. The second buffer 3530 temporarily stores the wafers W before the wafers W subjected to the edge exposure process in the second edge exposure chamber 3580 are transported back to the second module 3402.

Next, an example of performing a process using the coating unit 3000 of FIG. 2 will be described with reference to FIGS. 5A and 5B. 5A and 5B are flowcharts illustrating an example in which a process is performed on the wafer W in the coating unit 3000.

The container 2000 in which the wafers W are accommodated is placed on the mounting table 3120 of the load port 3100 (step S112). The door of the container 2000 is opened by the door opener. The index robot 3220 removes the wafer W from the container 2000 and transfers it to the second buffer 3330 (step S112). The wafer W is moved to a selected place of the first module 3401 and the second module 3402.

When the wafer W is selected to be processed in the first module 3401, the buffer robot 3360 transfers the wafer W stored in the second buffer 3330 to the first buffer 3320 (step). S120). The first robot 3432 takes the wafer W out of the first buffer 3320 and transports it to the bake chamber 3420 (step S122). The bake chamber 3420 performs a prebaking and cooling process sequentially (step S124). The first robot 3432 removes the wafer W from the bake chamber 3420 and transfers it to the resist coating chamber 3410 (step S126). The resist coating chamber 3410 applies photoresist on the wafer W (step S128). After that, the first robot 3432 transfers the wafer W from the resist coating chamber 3410 to the baking chamber 3420 (step S130). The baking chamber 3420 performs a soft bake process on the wafer W (step S132).

The first robot 3432 removes the wafer W from the bake chamber 3420 and transfers the wafer W to the first cooling chamber 3540 of the edge exposure module 3500 (step S134). In the first cooling chamber 3540, a cooling process is performed on the wafer W (step S136). Optionally, a cooling process may be performed in the bake chamber 3420, and the wafer W may be transferred directly from the bake chamber 3420 to the first buffer 3520. The wafer W on which the process is performed in the first cooling chamber 3540 is transferred to the first edge exposure chamber 3570 by the edge exposure robot 3560 (step S138). The wafer W, which is optionally processed in the first cooling chamber 3540, is transferred to the first buffer 3520 by the edge exposure robot 3560 and temporarily stored therein, and then is edged by the edge exposure robot 3560. It may be conveyed to the first edge exposure chamber 3570. The first edge exposure chamber performs a process of exposing the edge region of the wafer W (step S140). The wafer W in which the process is completed in the first edge exposure chamber 3570 is transferred to the first buffer 3520 by the edge exposure robot 3560 (step S142).

The first robot 3432 transports the wafer W from the first buffer 3520 to the bake chamber 3420 (step S144). The baking chamber 3420 performs a process of heating the wafer W (step S146). The first robot 3432 transfers the wafer W from the bake chamber 3420 to the first cooling chamber 3340 of the buffer module 3300 (step S148). The first cooling chamber 3340 performs a process of cooling the wafer W (step S150). The index robot 3220 carries the wafer W from the first cooling chamber 3340 to the container 2000 (step S152).

When the wafer W is selected to perform the process in the second module 3402, the second robot 3342 takes the wafer W out of the second buffer 3330 and bakes chamber 3470 of the second module 3402. (Step S160). The bake chamber 3470 sequentially performs the prebaking and cooling process (step S162). The second robot 3348 takes the wafer W out of the bake chamber 3470 and transports it to the resist coating chamber 3460 (step S164). The resist coating chamber 3460 applies photoresist on the wafer W (step S166). Thereafter, the second robot 3402 transfers the wafer W from the resist coating chamber 3460 to the baking chamber 3470 (step S168). The bake chamber 3470 performs a soft bake process on the wafer W (step S170).

The second robot 3348 takes the wafer W out of the bake chamber 3470 and transports it to the second cooling chamber 3550 of the edge exposure module 3500 (step S172). The cooling process is performed on the wafer W in the second cooling chamber 3550. Optionally, a cooling process may be performed in the bake chamber 3470 and the wafer W may be transferred directly from the bake chamber 3470 to the second buffer 3530. The wafer W on which the process is performed in the second cooling chamber 3550 is transferred to the second edge exposure chamber 3580 by the edge exposure robot 3560 (step S174). The wafer W, which is optionally processed in the second cooling chamber 3550, is transferred to the second buffer 3530 by the edge exposure robot 3560 and temporarily stored therein, and then is edged by the edge exposure robot 3560. It can be conveyed to the 2nd edge exposure chamber 3580 (step S176). The second edge exposure chamber 3580 performs a process of exposing the edge of the wafer W (step S178). The wafer W on which the process is completed in the second edge exposure chamber 3580 is transferred to the second buffer 3530 by the edge exposure robot 3560 (step S180).

The second robot 3348 transfers the wafer W from the second buffer 3530 to the bake chamber 3470 (step S182). The baking chamber 3470 performs a process of heating the wafer W (step S184). The second robot 3742 transfers the wafer W from the bake chamber 3470 to the second cooling chamber 3350 of the buffer module 3300 (step S186). The second cooling chamber 3350 performs a process of cooling the wafer W (step S188). The index robot 3220 transports the wafer W from the second cooling chamber 3350 to the container 2000 (step S190).

Next, various modifications of the above-described coating unit 3000 are illustrated.

The process module 3400 may include only one module instead of the first module 3401 and the second module 3402 divided into layers.

In addition, the index module 3200 may be arranged such that each of the first cooling chamber 3340 and the second cooling chamber 3350 is stacked with each other. In addition, the edge exposure module 3500 is provided with a plurality of first cooling chambers 3540 and a first edge exposure chamber 3570, respectively, and a plurality of second cooling chambers 3550 and second edge exposure chambers 3580 are provided. Can be provided.

In addition, the first cooling chamber 3340 and the second cooling chamber 3350 may not be provided in the buffer module 3300. In this case, the wafer W is transferred from the first module 3401 directly to the first buffer 3320 by the first robot 3432, and the index robot 3220 is stored in the first buffer 3320. Field W may be transported into vessel 2000. In addition, the wafer W is transferred from the second module 3402 directly to the second buffer 3330 by the second robot 3402, and the index robot 3220 is stored in the second buffer 3330. (W) can be conveyed to the vessel 2000.

Also, in the buffer module 3300, the positions of the first buffer 3320 and the first cooling chamber 3340 may be changed from each other, and the positions of the second buffer 3330 and the second cooling chamber 3350 may be different. Can be changed from each other.

In addition, the buffer module 3300 may be provided at the same height as the process module 3400. In this case, the index robot 3220 may optionally carry the wafers W directly to the first buffer 3320.

In addition, the edge exposing module 3500 may not be provided with the first cooling chamber 3540 and the second cooling chamber 3550. In this case, the wafer W on which the process is completed in the first module 3401 is directly transferred to the first buffer 3520 by the first robot 3432. In addition, the wafer W on which the process is completed in the second module 3402 is directly transferred to the second buffer 3530 by the second robot 3402.

In addition, in the edge exposure module 3500, the positions of the first cooling chamber 3540 and the first buffer 3520 may be changed from each other, and the positions of the second cooling chamber 3550 and the second buffer 3530 may be changed. Can be changed from each other.

In addition, the edge exposure module 3500 transfers the wafer W between the first edge exposure chamber 3570, the first buffer 3520, and the first cooling chamber 3540 instead of one edge exposure robot 3560. A lower robot (not shown) may be provided to transport the wafer W between the robot (not shown), the second edge exposure chamber 3580, the second buffer 3530, and the second cooling chamber 3550. have.

In addition, the process module 3400 may be provided with a chamber that performs another process in addition to the above-described processes.

(Exposure before and after processing unit)

6 to 8 are diagrams schematically showing the structure of the pre- and post-exposure processing unit 4000. FIG. 6 is a view of the pre-exposure before and after processing unit 4000, FIG. 7 is a view of the unit of FIG. 6 along the direction 'C', and FIG. 8 is a view of the unit of FIG. 6 along the direction 'D'. Drawing.

6 to 8, the pre-exposure processing unit 4000 includes a load port 4100, an index module 4200, a buffer module 4300, a process module 4400, and an interface module 4500. The pre-exposure before and after processing unit 4000 is coupled in-line with the exposure apparatus 9000. The exposure apparatus 9000 is coupled to the interface module 4500 along the first direction 12. According to an example, the exposure apparatus 9000 performs a process using an immersion exposure technique. In addition, the exposure apparatus 9000 performs an exposure process using a far-infrared light source, such as a KrF fluoride excimer laser or an ArF excimer laser.

The load port 4100 has a mounting base 4120 on which a container 2000 in which wafers W are accommodated is placed. The mounting base 4120 may be provided in plural, and the mounting bases 4120 may be arranged in a line along the second direction 14. In FIG. 6 four mounting blocks 4120 were provided.

The index module 4200 transfers the wafer W between the container 2000 and the buffer module 4300 placed on the mounting table 4120 of the load port 4100. The index module 4200 has a frame 4210, an index robot 4220, and a guide rail 4230. The frame 4210 is generally provided in the shape of an empty cuboid and is disposed between the load port 4100 and the buffer module 4300. The frame 4210 may be provided at a height lower than that of the frame 4310 of the buffer module 4300, which will be described later. The index robot 4220 and the guide rail 4230 are disposed in the frame 4210. The index robot 4220 allows the hand that directly handles the wafer W to be movable in the first direction 12, the second direction 14, and the third direction 16, 4221, and rotate on a horizontal plane. It has a structure capable of 4-axis driving. The index robot 4220 has a hand 4221, an arm 4202, a support 4223, and a pedestal 4224. The hand 4221 is fixed to the arm 4202. Arm 4202 is provided in a stretchable and rotatable structure. The support 4223 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 4222 is coupled to support 4223 so as to be linearly movable in third direction 16 along support 4223. The guide rail 4230 is provided such that its longitudinal direction is disposed along the second direction 14. The pedestal 4224 is coupled to the guide rail 4230 so as to be linearly movable along the guide rail 4230. The frame 4310 is further provided with a door opener (not shown) for opening and closing the door of the container 2000.

The buffer module 4300 has a frame 4310, a first buffer 4320, a second buffer 4330, a cooling chamber 4340, and a buffer robot 4350. The frame 4310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 4200 and the process module 4400. The first buffer 4320, the second buffer 4330, the cooling chamber 4340, and the buffer robot 4350 are positioned in the frame 4310. The second buffer 4330, the cooling chamber 4340, and the first buffer 4320 are sequentially disposed along the third direction 16 from below. The first buffer 4320 is positioned at a height corresponding to the first module 4401 of the process module 4400, which will be described later, and the second buffer 4330 and the cooling chamber 4340 are the process module 4400, which will be described later. It is positioned at a height corresponding to the second module 4402 of the. The buffer robot 4350 is positioned to be spaced a predetermined distance from the second buffer 4330, the cooling chamber 4340, and the first buffer 4320 in the second direction 14.

The second buffer 4330 and the first buffer 4320 temporarily store the plurality of wafers W, respectively. The second buffer 4330 has a housing 4331 and a plurality of supports 4332. The supports 4332 are disposed in the housing 4331 and are spaced apart from each other along the third direction 16. One wafer W is placed on each support 4332. The housing 4331 is a direction and buffer robot provided with the index robot 4220 so that the index robot 4220 and the buffer robot 4350 may carry or unload the wafer W into the support 4332 into the housing 4331. 4350 has an opening (not shown) in the direction provided. The first buffer 4320 has a structure generally similar to that of the second buffer 4330. However, the housing of the first buffer 4320 has an opening in the direction in which the buffer robot 4350 is provided and in the direction in which the first robot 4432 located in the first module 4401 described later is provided. The number of supports 4322 provided in the first buffer 4320 and the number of supports 4332 provided in the second buffer 4330 may be the same or different.

The buffer robot 4350 transfers the wafer W between the second buffer 4330 and the first buffer 4320. The buffer robot 4350 has a hand 4361, an arm 4362, and a support 4363. The hand 4361 is fixed to the arm 4362. Arm 4362 is provided in a flexible structure, allowing the hand 4361 to move in the horizontal direction. Arm 4361 is coupled to support 4363 so as to be linearly movable in third direction 16 along support 4363. The support 4363 has a length extending from a position corresponding to the second buffer 4330 to a position corresponding to the first buffer 4320. The support 4363 may be provided longer in the up or down direction than this. The buffer robot 4350 may simply be provided such that the hand 4361 is only biaxially driven along the second direction 14 and the third direction 16.

The cooling chamber 4340 cools the wafer (W). The cooling chamber 4340 has a housing 4431 and a cooling plate 4432. The cooling plate 4432 has an upper surface on which the wafer W is placed and cooling means 4435 for cooling the wafer W. As shown in FIG. As the cooling means 4435, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the cooling chamber 4340 may be provided with a lift pin assembly (not shown) that positions the wafer W on the cooling plate 4432. The housing 4431 may be an index robot 4220 so that the index robot 4220 and the second robot 4442 provided in the second module 4402 to be described later can load or unload the wafer W to the cooling plate 4432. This provided direction and the buffer robot 4350 has an opening in the provided direction. In addition, the cooling chamber 4340 may be provided with doors (not shown) for opening and closing the above-described opening.

The process module 4400 has a first module 4401 and a second module 4402. The first module 4401 performs a process of processing the wafer W before performing the exposure process, and the second module 4402 performs a process of processing the wafer W after the exposure process. The first module 4401 and the second module 4402 are arranged to partition each other into layers. In one example, the first module 4401 is located on top of the second module 4402. The first module 4401 has a protective film applying chamber 4410, a bake chamber 4420, and a transfer chamber 4430. The protective film applying chamber 4410, the transfer chamber 4430, and the bake chamber 4420 are sequentially disposed along the second direction 14. Therefore, the protective film applying chamber 4410 and the baking chamber 4420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 4430 interposed therebetween. A plurality of protective film applying chambers 4410 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of protective film applying chambers 4410 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 4420 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of baking chambers 4420 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 4430 is positioned side by side in the first direction 12 with the first buffer 4320 of the buffer module 4300. The first robot 4432 is located in the transfer chamber 4430. The transfer chamber 4430 has a generally square or rectangular shape. The first robot 4432 may include baking chambers 4420, protective coating chambers 4410, a first buffer 4320 of the buffer module 4300, and a first buffer 4520 of the interface module 4500 described later. The wafer W is transferred to the liver. The first robot 4432 has a hand 4435, an arm 4434, and a support 4435. The hand 4435 is fixed to the arm 4434. Arm 4344 is provided in a stretchable and rotatable structure. The arm 4434 is coupled to the support 4435 so as to be linearly movable in the third direction 16 along the support 4435.

The protective film applying chamber 4410 applies a protective film on the wafer W to protect the resist film during the liquid immersion exposure. The protective coating chamber 4410 has a housing 4411, a support plate 4412, and a nozzle 4413. The housing 4411 has a cup shape with an open top. The support plate 4412 is located in the housing 4411 and supports the wafer (W). The support plate 4412 is provided to be rotatable. The nozzle 4413 supplies a protective liquid for forming a protective film onto the wafer W placed on the support plate 4412. The nozzle 4413 has a circular tubular shape and can supply a protection liquid to the center of the wafer W. As shown in FIG. Optionally, the nozzle 4413 has a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 4413 may be provided as a slit. In this case, the support plate 4412 may be provided in a fixed state. The protective liquid includes a foamable material. As the protective liquid, a material having a low affinity with the photoresist and water may be used. For example, the protective liquid may contain a fluorine-based solvent. The protective film applying chamber 4410 supplies the protective liquid to the center area of the wafer W while rotating the wafer W placed on the support plate 4412.

The bake chamber 4420 heat-processes the wafer W on which the protective film is applied. The bake chamber 4420 has a cooling plate 4421 or a heating plate 4422. The cooling plate 4421 is provided with cooling means 4423, such as cooling water or thermoelectric elements. Alternatively, the heating plate 4422 is provided with heating means 4424 such as hot wires or thermoelectric elements. The heating plate 4422 and the cooling plate 4421 may each be provided in one bake chamber 4420. Optionally, some of the bake chambers 4420 may have only a heating plate 4422 and others may have only a cooling plate 4421.

The second module 4402 has a cleaning chamber 4460, a post exposure bake chamber 4470, and a transfer chamber 4480. The cleaning chamber 4460, the transfer chamber 4480, and the post-exposure bake chamber 4470 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 4460 and the post-exposure bake chamber 4470 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 4480 interposed therebetween. The cleaning chamber 4460 may be provided in plural and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of cleaning chambers 4460 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 4470 may be provided after the exposure, and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of post-exposure bake chambers 4470 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 4480 is positioned side by side in the first direction 12 with the second buffer 4330 of the buffer module 4300 when viewed from the top. The transfer chamber 4480 has a generally square or rectangular shape. The second robot 4482 is located in the transfer chamber 4480. The second robot 4442 may include post-exposure bake chambers 4470, cleaning chambers 4460, a cooling chamber 4340 of the buffer module 4300, and a second buffer 4530 of the interface module 4500 described below. The wafer W is transported in the liver. The second robot 4442 provided to the second module 4402 may be provided in the same structure as the first robot 4432 provided to the first module 4401.

The cleaning chamber 4460 cleans the wafer W after the exposure process. The cleaning chamber 4460 has a housing 4451, a support plate 4442, and a nozzle 4443. The housing 4451 has a cup shape with an open top. The support plate 4442 is located in the housing 4451, and supports the wafer W. As shown in FIG. The support plate 4442 is provided to be rotatable. The nozzle 4443 supplies the cleaning liquid onto the wafer W placed on the support plate 4442. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 4460 supplies the cleaning liquid to the center region of the wafer W while rotating the wafer W placed on the support plate 4442. Optionally, while the wafer W is being rotated, the nozzle 4443 can be linearly moved or rotated from the center area of the wafer W to the edge area.

The post-exposure bake chamber 4470 heats the wafer W on which the exposure process is performed using far ultraviolet rays. The post-exposure bake process heats the wafer W to amplify an acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 4470 has a heating plate 4452. The heating plate 4452 is provided with heating means 4444, such as a hot wire or a thermoelectric element. The post-exposure bake chamber 4470 may further include a cooling plate 4471 therein. Cooling plate 4471 is provided with cooling means 4473, such as cooling water or thermoelectric elements. In addition, a bake chamber may optionally be provided with only the cooling plate 4471.

As described above, in the process module 4400, the first module 4401 and the second module 4402 are provided to be completely separated from each other. In addition, the transfer chamber 4430 of the first module 4401 and the transfer chamber 4480 of the second module 4402 may be provided in the same size so as to completely overlap each other when viewed from the top. In addition, the protective film applying chamber 4410 and the cleaning chamber 4460 may be provided in the same size to be completely overlapped with each other when viewed from the top. In addition, the bake chamber 4420 and the post-exposure bake chamber 4470 may be provided in the same size, so as to completely overlap each other when viewed from the top.

The interface module 4500 transfers the wafer W between the process module 4400 and the exposure apparatus 9000. The interface module 4500 has a frame 4510, an interface robot 4540, a first buffer 4520, and a second buffer 4530. The interface robot 4540, the first buffer 4520, and the second buffer 4530 are located in the frame 4510. The first buffer 4520 and the second buffer 4530 are spaced apart from each other by a predetermined distance and disposed to be stacked on each other. The first buffer 4520 is disposed higher than the second buffer 4530. The first buffer 4520 is located at a height corresponding to the first module 4401, and the second buffer 4530 is disposed at a height corresponding to the second module 4402. As viewed from the top, the first buffer 4520 is arranged in line with the transfer chamber 4430 of the first module 4401 and in the first direction 12, and the second buffer 4530 is the second module 4402. Are positioned in a line along the transfer chamber 4430 and the first direction 12. The interface robot 4540 is positioned to be spaced apart from the first buffer 4520 and the second buffer 4530 in the second direction 14. The interface robot 4540 transports the wafer W between the first buffer 4520, the second buffer 4530, and the exposure apparatus 9000. The interface robot 4540 has a structure generally similar to that of the buffer robot 4350.

The first buffer 4520 temporarily stores the wafers W processed in the first module 4401 before they are moved to the exposure apparatus 9000. The second buffer 4530 may temporarily store the wafers W processed in the exposure apparatus 9000 before moving to the second module 4402. The first buffer 4520 has a housing 4452 and a plurality of supports 4522. The supports 4522 are disposed in the housing 4452 and are spaced apart from each other along the third direction 16. One wafer W is placed on each support 4522. The housing 4451 is provided with an interface robot 4540 and a first direction so that the interface robot 4540 and the first robot 4432 can carry or unload the wafer W into the support 4522 into the housing 4452. The robot 4432 has an opening in the provided direction. The second buffer 4530 has a structure generally similar to the first buffer 4520. However, the housing 4531 of the second buffer 4530 has openings (not shown) in the direction in which the interface robot 4540 is provided and in the direction in which the second robot 4482 is provided. The number of supports 4522 provided in the first buffer 4520 and the number of supports 4532 provided in the second buffer 4530 may be the same or different.

Next, an example of performing a process using the pre-exposure before and after processing unit 4000 of FIG. 6 will be described with reference to FIG. 9. 9 is a flowchart illustrating an example in which a process is performed on the wafer W in the pre-exposure processing unit 4000. In FIG. 5, a case where a chemically amplified resist is applied on the wafer W, and the exposure apparatus 9000 performs the process by exposure and liquid immersion exposure using an ultraviolet light source will be described as an example.

In the coating unit 3000, the wafers W on which the coating process is completed are accommodated in the container 2000. The container 2000 is placed on the mounting table 4120 of the exposure pre- and post-processing unit 4000 (step S212). The door of the container 2000 is opened by a door opener (not shown). The index robot 4220 removes the wafer W from the container 2000 and transfers it to the second buffer 4330 of the buffer module 4300 (step S214). The buffer robot 4350 carries the wafer W stored in the second buffer 4330 to the first buffer 4320 (step S216). The first robot 4432 removes the wafer W from the first buffer 4320 and transfers the wafer W to the protective film applying chamber 4410 of the process module 4400 (step S218). The protective film application chamber 4410 applies a protective film on the wafer W (step S220). Thereafter, the first robot 4432 transfers the wafer W from the protective film applying chamber 4410 to the bake chamber 4420 (step S222). The bake chamber 4420 performs heat treatment such as heating and cooling on the wafer W (step S224).

The first robot 4432 takes the wafer W out of the bake chamber 4420 and transports the wafer W to the first buffer 4520 (step S226). The interface robot 4540 carries the wafer W from the first buffer 4520 to the exposure apparatus 9000 (step S228). The exposure process is performed with respect to the wafer W in the exposure apparatus 9000 (step S230). Thereafter, the interface robot 4540 carries the wafer W to the second buffer 4530 in the exposure apparatus 9000 (step S232).

The second robot 4442 removes the wafer W from the support of the second buffer 4530 and transports the wafer W to the cleaning chamber 4460 of the process module 4400 (step S234). The cleaning chamber 4460 supplies a cleaning liquid to the surface of the wafer W to perform a cleaning process (step S236). When the cleaning of the wafer W using the cleaning liquid is completed, the second robot 4482 immediately removes the wafer W from the cleaning chamber 4460 and transports the wafer W to the post-exposure bake chamber 4470 (step S238). ). The cleaning liquid attached to the wafer W is removed by heating the wafer W in the heating plate of the bake chamber 4470 after exposure, and at the same time, amplification of the acid generated in the photoresist to amplify the properties of the photoresist. The change is completed (step S240). The second robot 4442 transfers the wafer W from the post-exposure bake chamber 4470 to the cooling chamber 4340 of the buffer module 4300 (step S242). Cooling of the wafer W is performed in the cooling chamber 4340 (step S244). The index robot 4220 removes the wafer W from the cooling chamber 4340 and transports it to the container 2000 (step S246).

The container 2000 is transferred to the developing unit 5000, and a developing process is performed in the developing unit 5000.

A part of the protective film remaining on the wafer W is removed by the developer, and the other part of the protective film is removed together with the photoresist during the ashing process.

According to the embodiment of FIG. 6, the pre- and post-exposure processing unit 4000 does not include a separate protective film removing chamber. Therefore, the structure of the pre- and post-exposure processing unit 4000 is relatively simple, and the time required for the process can be reduced.

In addition, when using a chemically amplified resist, it is important that the post-exposure bake process is performed after the exposure process is completed. According to the embodiment of FIG. 6, the post-exposure bake chamber 4470 is provided to the pre-exposure processing unit 4000. Therefore, before the wafer W is moved to the developing unit 5000, acid amplification can be quickly performed in the pre- and post-exposure processing unit 4000.

In addition, according to the embodiment of FIG. 6, the cleaning chamber 660 only performs cleaning with the cleaning liquid on the wafer W, and does not separately dry the wafer W by supplying a fluid such as a dry gas. The wafer W is dried by heating. For example, wafer drying is performed simultaneously with acid amplification in the bake chamber 670 after exposure. Therefore, the time required for the process can be reduced compared to the case where both the cleaning with the cleaning liquid and the drying with the drying gas are performed in the cleaning chamber 660.

Next, various modifications of the above-described pre- and post-exposure processing unit 4000 are illustrated.

In the above-described example, the first module 4401 is described as being disposed above the second module 4402. Alternatively, the second module 4402 may be disposed above the first module 4401.

In addition, the process module 4400 may include only one module instead of the first module 4401 and the second module 4402 divided into layers. In this case, in one module, the protective film applying chamber 4410, the bake chamber 4420, the cleaning chamber 4460, and the post exposure bake chamber 4470 may be provided.

In addition, the cleaning chamber 4460 may further be provided with a nozzle for supplying a dry gas in addition to the nozzle for supplying a cleaning liquid. In this case, the cleaning liquid attached to the wafer W may be removed before the wafer W is heated in the baking chamber 4470 after exposure.

In addition, a cooling plate may not be provided in the second module 4402. Cooling of the wafer W may only take place in the cooling chamber 4340 provided in the buffer module 4300. In this case, the plurality of cooling chambers 4340 may be selectively arranged in the buffer module 4300 to be stacked on each other.

In addition, the cooling module 4340 may not be provided in the buffer module 4300. In this case, the wafer W cooled by the cooling plate of the second module 4402 is transferred directly to the second buffer 4330 by the second robot 4440, and the index robot 4220 may use the second buffer ( The wafers W stored in the 4330 may be transferred to the container 2000.

In addition, the positions of the cooling chamber 4340 and the second buffer 4330 in the buffer module 4300 may be changed.

In addition, the positions of the first module 4401 and the second module 4402 may be changed. In this case, optionally, the cooling unit provided to the buffer module 4300 is provided at a height corresponding to the second module 4402.

In addition, the buffer module 4300 may be provided at the same height as the process module 4400. In this case, the index robot 4220 may optionally supply the wafers W directly to the first buffer 4320.

Alternatively, the second module 4402 may be provided with a protective film removing chamber for removing the protective film after the exposure process. In this case, the protective film provided on the wafer W may be removed before the ashing process is performed.

In addition, when the exposure apparatus 9000 performs the process by a method other than the liquid immersion exposure method, the protective film coating unit 3000 may not be provided to the first module 4401. In this case, an optional bake chamber 4420 may also not be provided. In this case, the process module 4400 may optionally be provided as the second module 4402 without the first module 4401.

In addition, when the exposure apparatus 9000 does not perform the process using the far-infrared light source, the post-exposure bake chamber 4470 may not be provided to the second module 4402.

(Developing unit)

10 to 12 are diagrams schematically showing the structure of the developing unit 5000. FIG. 10 is a view of the developing unit 5000 from the top, FIG. 11 is a view of the developing unit 5000 of FIG. 10 along the 'E' direction, and FIG. 12 is a view of the unit of FIG. 11 in the 'F' direction. This is a view along the way.

10 to 12, the developing unit 5000 includes a load port 5100, an index module 5200, a buffer module 5300, and a process module 5400. The load port 5100, the index module 5200, the buffer module 5300, and the process module 5400 are sequentially disposed along the first direction 12. The load port 5100 has a mounting table 5120 on which a container 2000 in which wafers W are accommodated is placed. The mounting table 5120 may be provided in plural, and the mounting tables 5120 may be arranged in a line along the second direction 14. In FIG. 10, four mounting stages 5120 are provided.

The index module 5200 transfers the wafer w between the container 2000 placed on the mounting table of the load port 5100 and the buffer module 5300. The index module 5200 has a frame 5210, an index robot 5220, and a guide rail 5230. The frame 5210 is generally provided in the shape of an empty rectangular parallelepiped, and is disposed between the load port 5100 and the buffer module 5300. The frame 5210 may be provided at a height lower than that of the frame 5310 of the buffer module 5300, which will be described later. The index robot 5220 and the guide rail 5230 are disposed in the frame 5210. The index robot 5220 is configured to move in the first direction 12, the second direction 14, and the third direction 16 so that the hand 5121 directly handling the wafer W may rotate in four axes. It has a structure that can be driven. Index robot 5220 has a hand 5221, an arm 5222, a support 5223, and a pedestal 5224. Arm 5222 is provided in a flexible structure to allow hand 5222 to move in the horizontal direction. The support 5223 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 5222 is coupled to support 5223 so as to be linearly movable in third direction 16 along support 5223. The guide rail 5230 is provided such that its longitudinal direction is disposed along the second direction 14. The support 5223 is fixedly coupled to the pedestal 5224. The pedestal 5224 is coupled to the guide rail to be linearly movable along the guide rail 5230. In addition, although not shown, the frame 5210 is further provided with a door opener for opening and closing the door of the container 2000.

Referring to FIG. 11, the buffer module 5300 may include a frame 5310, a first buffer 5320, a second buffer 5330, a first cooling chamber 5340, a second cooling chamber 5350, and a buffer robot. (5360). The frame 5310 is provided in a shape of an empty rectangular parallelepiped, and is disposed between the index module 5200 and the process module 5400. The first buffer 5320, the second buffer 5330, the first cooling chamber 5340, the second cooling chamber 5350, and the buffer robot 5530 are positioned in the frame 5310. The second cooling chamber 5350, the second buffer 5330, the first cooling chamber 5340, and the first buffer 5320 are sequentially disposed along the third direction 16 from below. The first cooling chamber 5340 and the first buffer 5320 are positioned at a height corresponding to the first module 5401 of the process module 5400 described later, and the second cooling chamber 5350 and the second buffer ( The 5330 is located at a height corresponding to the second module 5402 of the process module 5400 described later. The buffer robot 5530 is positioned to be spaced apart from the second buffer 5330, the second cooling chamber 5350, the first buffer 5320, and the first cooling chamber 5340 in the second direction 14 by a predetermined distance. .

The second buffer 5330 and the first buffer 5320 temporarily store the plurality of wafers W, respectively. The second buffer 5330 has a housing 5331 and a plurality of supports 5332. The supports 5332 are disposed in the housing 5331 and are spaced apart from each other along the third direction 16. One wafer W is placed on each support 5332. In the housing 5313, the index robot 5220, the buffer robot 5530, and the second robot 5542 of the second module 5402 described below bring the wafer W into the support 5332 into the housing 5331. Or has openings (not shown) in the direction provided with the index robot 5220, the direction provided with the buffer robot 5530, and the direction provided with the second robot 5542 so as to be able to carry them out. The first buffer 5320 has a structure generally similar to that of the second buffer 5330. However, the housing 5321 of the first buffer 5320 has an opening in a direction in which the buffer robot 5530 is provided and in a direction in which the first robot 5432 located in the first chamber to be described later is provided. The number of supports 5322 provided in the first buffer 5320 and the number of supports 5332 provided in the second buffer 5330 may be the same or different. According to an example, the number of supports 5332 provided in the second buffer 5330 may be greater than the number of supports 5322 provided in the first buffer 5320.

The buffer robot 5560 transfers the wafer W between the second buffer 5330 and the first buffer 5320. The buffer robot 5560 has a hand 5361, an arm 5362, and a support 5363. The hand 5361 is fixed to the arm 5362. Arm 5362 is provided in an extensible structure to allow hand 5361 to move along the second direction 14. Arm 5362 is coupled to support 5363 so as to be linearly movable in third direction 16 along support 5363. The support 5363 has a length extending from a position corresponding to the second buffer 5330 to a position corresponding to the first buffer 5320. Support 5363 may be provided longer in the up or down direction than this. The buffer robot 5560 may simply be provided such that the hand 5361 is only biaxially driven in the second direction 14 and the third direction 16.

The second cooling chamber 5350 and the first cooling chamber 5340 cool the wafer W, respectively. The second cooling chamber 5350 and the first cooling chamber 5340 have the same structure with each other. The second cooling chamber 5350 has a housing 5331 and a cooling plate 5332. The cooling plate 5332 has an upper surface on which the wafer W is placed, and cooling means 5353 for cooling the wafer W. As shown in FIG. As the cooling means 5353, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the cooling chamber 5350 may be provided with a lift pin assembly (not shown) that positions the wafer W on the cooling plate 5332. The housing 5331 is a direction in which the index robot 5220 is provided so that the index robot 5220 and the second robot 5542 provided in the second module 5402 to be described later can load or unload the wafer W onto the cooling plate. And an opening in the direction in which the second robot 5542 is provided. In addition, the second cooling chamber 5350 may be provided with doors (not shown) for opening and closing the above-described opening.

The process module 5400 performs a necessary process before the wafer W is transferred to the pre-exposure processing unit 4000. Process module 5400 generally has the shape of a cuboid. The process module 5400 has a first module 5401 and a second module 5402. The first module 5401 and the second module 5402 are arranged to partition into each other in layers. The first module 5401 and the second module 5402 may each be provided to perform the same process. In one example, the first module 5401 is located on top of the second module 5402.

The first module 5401 has a developing chamber 5410, a bake chamber 5520, and a transfer chamber 5430. The developing chamber 5410, the bake chamber 5520, and the transfer chamber 5430 are sequentially disposed along the second direction 14. Therefore, the developing chamber 5410 and the baking chamber 5520 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 5430 interposed therebetween. A plurality of developing chambers 5410 may be provided, and a plurality of developing chambers 5410 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six developing chambers 5410 are provided is shown. A plurality of bake chambers 5520 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 5520 are provided is shown. Alternatively, however, the bake chamber 5520 may be provided in larger numbers.

The transfer chamber 5430 is positioned side by side in the first direction 12 with the first buffer 5320 of the buffer module 5300. In the transfer chamber 5430, a first robot 5432 and a guide rail 5433 are positioned. The transfer chamber 5430 has a generally rectangular shape. The first robot 5432 transfers the wafer W between the bake chambers 5520, the developing chambers 5410, the first buffer 5320, and the first cooling chamber 5340. The guide rail 3433 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail guides the first robot 5432 to move linearly in the first direction 12. The first robot 5432 has a hand 5434, an arm 5535, a support 5434, and a pedestal 5541. The hand 5434 is fixedly mounted to the arm 5535. Arm 5435 is provided in a flexible structure to allow hand 5342 to be movable in the horizontal direction. The support 5436 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 5435 is coupled to support 5434 such that it is linearly movable in a third direction 16 along support 5436. The support 5436 is fixedly coupled to the pedestal 5437. The pedestal 5437 is coupled to the guide rail 5433 to be movable along the guide rail 5433.

The developing chambers 5410 all have the same structure. However, the types of the developer used in each of the developing chambers 5410 may be different from each other. The developing chamber 5410 removes the light irradiated region of the photoresist on the wafer (W). At this time, the area irradiated with light in the protective film is also removed. Depending on the kind of photoresist that is optionally used, only the regions of the photoresist and the protective film to which light is not irradiated may be removed.

The developing chamber 5410 has a housing 5411, a support plate 5212, and a nozzle 5413. The housing 5411 has a cup shape with an open top. The support plate 5412 is located in the housing 5411 and supports the wafer W. As shown in FIG. The support plate 5212 is provided rotatably. The nozzle 5413 supplies the developer onto the wafer W placed on the support plate 5212. The nozzle 5413 has a circular tubular shape, and the developer can be supplied to the center of the wafer (W). Optionally, the nozzle 5413 has a length corresponding to the diameter of the wafer W, and the ejection openings of the nozzle 5413 may be provided as slits. In addition, the developing chamber 5410 may further be provided with a nozzle 5414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W to which the developing solution is supplied.

The bake chamber 5520 heat-treats the wafer (W). For example, the bake chambers 5520 are heated after each baking process and a hard bake process for heating the wafer W after the developing process is performed, and a post bake process for heating the wafer W before the developing process is performed. And a cooling process for cooling the finished substrate. The bake chamber 5520 has a cooling plate 5421 or a heating plate 5542. The cooling plate 5251 is provided with cooling means 5253 such as cooling water or thermoelectric elements. Alternatively, the heating plate 5542 is provided with heating means 5424 such as hot wires or thermoelectric elements. The heating plate 5542 and the cooling plate 5542 may be provided in one bake chamber 5520, respectively. Optionally, some of the bake chambers 5520 may have only a heating plate 5542 and others may have only a cooling plate 5542.

The second module 5402 has a developing chamber 5460, a bake chamber 5470, and a transfer chamber 5480. The developing chamber 5460, the bake chamber 5470, and the transfer chamber 5480 have the same structure and arrangement as the developing chamber 5410, the bake chamber 5520, and the transfer chamber 5430 of the first module 5401. Have In addition, the transfer chamber 5480 has a second robot 5542, which has the same structure as the first robot 5432 provided in the first module 5401. The second robot 5542 is provided to transport the wafer W between the developing chamber 5460, the bake chamber 5470, the second buffer 5330, and the second cooling chamber 5350.

As described above, in the process module 5400, the first module 5401 and the second module 5402 are provided to be separated from each other. In addition, when viewed from the top, the first module 5401 and the second module 5402 may have the same structure and arrangement.

Next, an example of performing a process using the developing unit 5000 of FIG. 10 will be described with reference to FIGS. 13A and 13B. 13A and 13B are flowcharts illustrating an example in which a process is performed on the wafer W in the developing unit 5000.

The container 2000 in which the wafers W are accommodated is placed on the mounting table 5120 of the load port 5100 (step S312). The door of the container 2000 is opened by the door opener. The index robot 5220 removes the wafer W from the container 2000 and carries it to the second buffer 5330 (step S314). The wafer W is moved to a selected place of the first module 5401 and the second module 5402.

When the wafer W is selected to be processed in the first module 5401, the buffer robot 5530 carries the wafer W stored in the second buffer 5330 to the first buffer 5320 (step). S320). The first robot 5432 removes the wafer W from the first buffer 5320 and transfers the wafer W to the bake chamber 5520 of the first module 5401 (step S322). The bake chamber 5520 sequentially performs the post bake and cooling process (step S324). The first robot 5432 removes the wafer W from the bake chamber 5520 and transfers the wafer W to the developing chamber 5410 (step S326). The developing chamber 5410 supplies a developing solution onto the wafer W to perform a developing process (step S328). Thereafter, the first robot 5432 transfers the wafer W from the developing chamber 5410 to the bake chamber 5420 (step S330). The bake chamber 5520 performs a hard bake process on the wafer W (step S332).

The first robot 5432 removes the wafer W from the bake chamber 5520 and transports the wafer W to the first cooling chamber 5340 (step S334). The first cooling chamber 5340 performs a process of cooling the wafer W (step S336). The index robot 5220 carries the wafer W from the first cooling chamber 5340 to the container 2000 (step S338).

When the wafer W is selected to be processed in the second module 5402, the second robot 5542 removes the wafer W from the second buffer 5330 and bakes chamber 5470 of the second module 5402. (Step S360). In the baking chamber 5470, a post bake and a cooling process are performed sequentially (step S362). The second robot 5542 removes the wafer W from the bake chamber 5470 and carries it to the developing chamber 5460 (step S364). The developing chamber 5460 supplies a developing solution onto the wafer W (step S366). Thereafter, the second robot 5542 transfers the wafer W from the developing chamber 5460 to the bake chamber 5470 (step S368). The baking chamber 5470 performs a hard bake process on the wafer W (step S370).

The second robot 5542 removes the wafer W from the bake chamber 5470 and transfers it to the second cooling chamber 5350 (step S372). The second cooling chamber 5350 performs a cooling process on the wafer W (step S374). The index robot 5220 carries the wafer W from the second cooling chamber 5350 to the container 2000 (step S376).

Next, various modified examples of the developing unit 5000 described above are illustrated.

The process module 5400 may include only one module instead of the first module 5401 and the second module 5402 divided into layers.

In addition, the index module 5200 may be provided with a plurality of first cooling chambers 5340 and second cooling chambers 5350, respectively, and they may be arranged to be stacked on each other.

In addition, the buffer module 5300 may not be provided with the first cooling chamber 5340 and the second cooling chamber 5350. In this case, the wafer W is transferred from the first module 5401 directly to the first buffer 5320 by the first robot 5432, and the index robot 5220 is stored in the first buffer 5320. Field W may be transported into vessel 2000. In addition, the wafer W is transferred from the second module 5402 directly to the second buffer 5330 by the second robot 5542, and the index robot 5220 is a wafer stored in the second buffer 5330. (W) can be conveyed to the vessel 2000.

In addition, in the buffer module 5300, the positions of the first buffer 5320 and the first cooling chamber 5340 may be changed from each other, and the positions of the second buffer 5330 and the second cooling chamber 5350 may be changed. Can be changed from each other.

In addition, the buffer module 5300 may be provided at the same height as the process module 5400. In this case, the index robot 5220 may optionally supply the wafers W directly to the first buffer 5320.

In addition, in the process module 5400, another process may be added unlike the above-described process.

According to the embodiment of FIG. 1, the substrate treating apparatus is independently provided by a unit performing an application process, a unit performing a development process, and a unit connected inline with the exposure apparatus 9000 to perform a pre-exposure treatment process. It is. Therefore, unlike a facility in which a module that simultaneously performs an application and development process is provided in-line with the exposure apparatus 9000, the application unit (even if the accumulation of the wafer W occurs due to a long process time in the exposure apparatus 9000). 3000 and the developing unit 5000 may continuously perform the process.

14A to 14G sequentially illustrate a process of forming a pattern on a thin film on a wafer (W).

Initially, a thin film 102 is deposited on the wafer W in a deposition apparatus (not shown) (FIG. 14A), and the wafer W is conveyed to the application unit 3000. In the coating unit 3000, a photoresist 104 is applied onto the wafer W (FIG. 14B). As described above, the coating unit 3000 may further perform a process such as a baking process or an edge exposure process in addition to the application of the photoresist 104. The wafer W is then conveyed to the pre- and post-exposure processing unit 4000. The protective film 106 is coated on the wafer W in the first module 4401 of the pre-exposure before and after processing unit 4000 (FIG. 14C). As described above, a process such as a baking process is further performed in the first module 4401. The wafer W is conveyed to the exposure apparatus 9000. The exposure apparatus 9000 irradiates light to the selected region 108 on the protective film 106 and the photoresist 104 to change the properties of the protective film 106 and the photoresist 104 provided in the region (FIG. 14D). ). The second module 4402 of the pre-exposure before and after processing unit 4000 performs a cleaning process and a post-exposure bake process. During the post-exposure bake process, the cleaning liquid remaining on the wafer W is removed. The wafer W is then conveyed to the developing unit 5000. In the developing unit 5000, the region 108 whose properties are changed among the protective film 106 and the photoresist 104 is removed (FIG. 14E). As described above, in the coating unit 3000, a process such as a baking process is further performed in addition to the developing process. The wafer W is then conveyed to an etching apparatus (not shown). In the etching apparatus, the exposed region 103 of the thin film is removed by the etching liquid (FIG. 14F). The wafer W is then conveyed to an ashing device (not shown). In the ashing apparatus, the photoresist 104 and the protective film 106 remaining on the thin film 102 are removed (FIG. 14G). A process of cleaning the wafer W as needed while the wafer W is moved between the deposition apparatus, the coating unit 3000, the pre-exposure processing unit 4000, the developing unit 5000, the etching apparatus, and the ashing apparatus, and the like. The same other process can be performed.

1 is a schematic view of a substrate processing system according to an embodiment of the present invention.

2 to 4 are schematic views showing the structure of an application unit according to an embodiment of the present invention.

5A and 5B are flowcharts sequentially illustrating a process of performing a process in the coating unit of FIG. 2.

6 to 8 are schematic views illustrating a structure of a post-exposure bake unit according to an exemplary embodiment of the present invention.

9 is a flowchart sequentially illustrating a process of performing a process in the coating unit of FIG. 6.

10 to 12 are schematic views showing the structure of a developing unit according to an embodiment of the present invention.

13A and 13B are flowcharts sequentially illustrating a process of performing a process in the developing unit of FIG. 10.

14A through 14G sequentially illustrate a process of forming a pattern on a wafer.

Explanation of symbols on the main parts of the drawings

1000: Container

3000: Dispensing Unit

4000: Bake unit after exposure

5000: developing unit

3100, 4100, 5100: Load port

3200, 4200, 5200: Index Module

3300, 4300, 5300: Buffer Module

3400, 4400, 5400: Process Module

3500: Edge Exposure Module

4500: interface module

Claims (35)

An application unit which performs an application process on the substrate; A pre-exposure before and after processing unit connected to an exposure apparatus that performs an exposure process, and performing a pre-exposure treatment process on a substrate on which the process is performed in the coating unit; And And a developing unit performing a developing process on the substrate on which the process is performed in the pre-exposure before and after processing unit. The coating unit, the pre-exposure processing unit, and the developing unit each include a load port in which a container containing wafers is placed, an index module for inserting a substrate into or removing a substrate from the container, and a predetermined process on the substrate. Including a process module to perform, wherein the load port, the index module, and the process module is disposed sequentially, The pre-exposure before and after processing unit further includes an interface module connected to the exposure apparatus, wherein the interface module is disposed on the opposite side of the index module based on the process module, The process module of the pre-exposure before and after processing unit includes a first module and a second module partitioned into layers, The first module, A protective film applying chamber for applying a protective film on the substrate; A bake chamber for performing heat treatment on the substrate; And a first robot for transporting the substrate between the protective film application chamber and the bake chamber. delete delete The method of claim 1, And the second module further comprises a cleaning chamber for cleaning the substrate. The method of claim 4, wherein The second module, A post-exposure bake chamber for performing a post-exposure bake process on the exposed substrate; And a second robot for transporting the substrate between the cleaning chamber and the post exposure bake chamber. An application unit which performs an application process on the substrate; A pre-exposure before and after processing unit connected to an exposure apparatus that performs an exposure process, and performing a pre-exposure treatment process on a substrate on which the process is performed in the coating unit; And And a developing unit performing a developing process on the substrate on which the process is performed in the pre-exposure before and after processing unit. The coating unit, the pre-exposure processing unit, and the developing unit each include a load port in which a container containing wafers is placed, an index module for inserting a substrate into or removing a substrate from the container, and a predetermined process on the substrate. Including a process module to perform, wherein the load port, the index module, and the process module is disposed sequentially, The pre-exposure before and after processing unit further includes an interface module connected to the exposure apparatus, wherein the interface module is disposed on the opposite side of the index module based on the process module, The process module of the pre-exposure before and after processing unit includes a first module and a second module partitioned into layers, The pre-exposure before and after processing unit further includes a buffer module disposed between the index module and the process module, The buffer module, A first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; And a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate. The method of claim 6, And the first buffer and the second buffer are arranged to be stacked on each other, and include a plurality of supports on which a substrate is placed. The method of claim 7, wherein The buffer module of the pre-exposure before and after processing unit further comprises a buffer robot for transporting the substrate between the first buffer and the second buffer. The method of claim 8, And the first buffer and the second buffer are arranged side by side in the vertical direction. The method of claim 6, The buffer module further comprises a cooling chamber disposed at a height corresponding to the first module and cooling the substrate. An application unit which performs an application process on the substrate; A pre-exposure before and after processing unit connected to an exposure apparatus that performs an exposure process, and performing a pre-exposure treatment process on a substrate on which the process is performed in the coating unit; And And a developing unit performing a developing process on the substrate on which the process is performed in the pre-exposure before and after processing unit. The coating unit, the pre-exposure processing unit, and the developing unit each include a load port in which a container containing wafers is placed, an index module for inserting a substrate into or removing a substrate from the container, and a predetermined process on the substrate. Including a process module to perform, wherein the load port, the index module, and the process module is disposed sequentially, The pre-exposure before and after processing unit further includes an interface module connected to the exposure apparatus, wherein the interface module is disposed on the opposite side of the index module based on the process module, The process module of the pre-exposure before and after processing unit includes a first module and a second module partitioned into layers, The interface module, A first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; A second buffer disposed at a height corresponding to the second module and temporarily storing the substrate, and And an interface robot for transporting a substrate between the first buffer and the exposure apparatus and between the second buffer and the exposure apparatus. An application unit which performs an application process on the substrate; A pre-exposure before and after processing unit connected to an exposure apparatus that performs an exposure process, and performing a pre-exposure treatment process on a substrate on which the process is performed in the coating unit; And And a developing unit performing a developing process on the substrate on which the process is performed in the pre-exposure before and after processing unit. The coating unit, the pre-exposure processing unit, and the developing unit each include a load port in which a container containing wafers is placed, an index module for inserting a substrate into or removing a substrate from the container, and a predetermined process on the substrate. Including a process module to perform, wherein the load port, the index module, and the process module is disposed sequentially, The pre-exposure before and after processing unit further includes an interface module connected to the exposure apparatus, wherein the interface module is disposed on the opposite side of the index module based on the process module, The coating unit further includes an edge exposure module, And the edge exposure module is disposed opposite the index module with respect to the process module. delete delete delete delete A pre- and post-exposure processing unit for performing a process required before and after exposure to a substrate to which a photoresist is applied, A load port on which a container containing the substrates is placed; An index module for removing the substrate from or placing the substrate into the container; A process module for performing a process on the substrates; And Including an interface module connected to the exposure apparatus, The load port, the index module, the process module, and the interface module are sequentially disposed in a first direction, The process module includes a first module and a second module disposed to be partitioned into each other, The first module is provided with a protective film applying chamber for applying a protective film on a substrate, And the second module is provided with a cleaning chamber for cleaning the substrate. The method of claim 17, The process module, A baking chamber disposed in the first module and performing heat treatment on the substrate; A first robot disposed in the first module and transferring a substrate between the protective film applying chamber and the bake chamber; A post-exposure bake chamber disposed in the second module and performing a post-exposure bake process on the exposed substrate; And And a second robot disposed in the second module to transport a substrate between the cleaning chamber and the post-exposure bake chamber. The method of claim 17, The pre-exposure before and after processing unit further includes a buffer module disposed between the index module and the process module, The buffer module, A first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; And a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate. The method of claim 19, And each of the first buffer and the second buffer is disposed to be stacked on each other, and includes a plurality of supports on which a substrate is placed. The method of claim 20, The buffer module of the pre-exposure before and after processing unit further comprises a buffer robot for transporting the substrate between the first buffer and the second buffer. The method of claim 21, And the first buffer and the second buffer are arranged side by side in the vertical direction. The method of claim 19, The buffer module further includes a cooling chamber disposed at a height corresponding to the first module and cooling the substrate. The method of claim 17, The interface module, A first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; A second buffer disposed at a height corresponding to the second module and temporarily storing the substrate; And an interface robot for transporting a substrate between the first buffer and the exposure apparatus and between the second buffer and the exposure apparatus. 25. The method of claim 24, And each of the first buffer and the second buffer is disposed to be stacked on each other, and includes a plurality of supports on which a substrate is placed. A pre- and post-exposure processing unit for performing a process required before and after exposure to a substrate to which a photoresist is applied, A load port in which a container containing substrates is placed, an index module for loading or removing a substrate into the container, a process module performing a process on the substrates, a buffer module disposed between the index module and the process module, And an interface module connected to the exposure apparatus. The load port, the index module, the buffer module, the process module, and the interface module are sequentially disposed in a first direction, The process module includes a first module and a second module partitioned into each other, The first module, A protective film applying chamber for applying a protective film on the substrate; A bake chamber for performing heat treatment on the substrate; A transfer chamber provided with a first robot for transferring a substrate between the protective film applying chamber, the bake chamber, the buffer module, and the interface module, The second module, A cleaning chamber for cleaning the substrate; A post-exposure bake chamber for performing a post-exposure bake process on the substrate; And a transfer chamber provided with a second robot for transferring a substrate between the cleaning chamber, the post-exposure bake chamber, the buffer module, and the interface module. The method of claim 26, The protective film applying chamber, the transfer chamber provided with the first robot, and the bake chamber are sequentially disposed along a second direction perpendicular to the first direction, And the cleaning chamber, the transfer chamber provided with the second robot, and the post-exposure bake chamber are sequentially arranged along the second direction. 28. The method of claim 27, The first module is disposed above the second module, The buffer module, A first buffer disposed at a height corresponding to the first module and temporarily storing a substrate; A cooling chamber disposed at a height corresponding to the second module and cooling the substrate; The first buffer and the cooling chamber are arranged in a line in the vertical direction, And the first buffer is disposed in a line along the first direction with the transfer chamber of the first module when viewed from the top. 29. The method of claim 28, The buffer module, A second buffer disposed at a height corresponding to the second module and temporarily storing the substrate; Further comprising a buffer robot for transporting the substrate between the first buffer and the second buffer, And the first buffer and the buffer robot are disposed along a second direction perpendicular to the first direction when viewed from the top. In the method of processing a substrate, Performing a process of applying photoresist on the substrate; Performing a process of applying a protective film on the substrate to which the photoresist is applied; Performing a liquid immersion exposure process on the substrate coated with the protective film; Performing a process of cleaning the substrate on which the immersion exposure has been performed; And Performing a development process on the substrate, The performing of the process of applying the protective film and the performing of the cleaning process are performed in an exposure pre-exposure processing unit connected inline with an exposure apparatus that performs the liquid immersion exposure process, The step of applying the photoresist is performed in a coating unit disposed separately from the pre-exposure processing unit, And performing the developing step is performed in a coating unit disposed separately from the pre-exposure before and after processing unit. 31. The method of claim 30, And performing a post-exposure bake process on the substrate, between the cleaning of the substrate and the developing process on the substrate. The method of claim 31, wherein The process of cleaning the substrate is made by supplying a cleaning liquid to the substrate, The cleaning liquid remaining on the substrate is removed by heating of the substrate without drying by supply of a fluid. The method of claim 31, wherein The process of cleaning the substrate is to wash the substrate using a cleaning liquid, The process of removing the cleaning liquid remaining on the substrate is performed after the post-exposure bake process performed immediately after the process of cleaning the substrate. 31. The method of claim 30, And the protective film is removed from the outside of the pre- and post-exposure processing unit. 31. The method of claim 30, A portion of the protective film is removed in the developing step, and a part of the protective film is removed in the ashing step.

Images