KR20090096353A - 복합 기판의 제조 장치 및 상기 복합 기판의 제조 장치를 사용한 복합 기판의 제조 방법 - Google Patents

복합 기판의 제조 장치 및 상기 복합 기판의 제조 장치를 사용한 복합 기판의 제조 방법 Download PDF

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Publication number
KR20090096353A
KR20090096353A KR1020090019109A KR20090019109A KR20090096353A KR 20090096353 A KR20090096353 A KR 20090096353A KR 1020090019109 A KR1020090019109 A KR 1020090019109A KR 20090019109 A KR20090019109 A KR 20090019109A KR 20090096353 A KR20090096353 A KR 20090096353A
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KR
South Korea
Prior art keywords
substrate
substrates
stage
heat treatment
board
Prior art date
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Ceased
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KR1020090019109A
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English (en)
Korean (ko)
Inventor
히데토 오누마
토모아키 모리와카
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20090096353A publication Critical patent/KR20090096353A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3402—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/02—Temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08—Dimensions, e.g. volume
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08—Dimensions, e.g. volume
    • B32B2309/10—Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/70—Automated, e.g. using a computer or microcomputer
    • B32B2309/72—For measuring or regulating, e.g. systems with feedback loops
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/028—Treatment by energy or chemical effects using vibration, e.g. sonic or ultrasonic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
    • B32B2310/0409—Treatment by energy or chemical effects using liquids, gas or steam using liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/16—Drying; Softening; Cleaning
    • B32B38/162—Cleaning

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020090019109A 2008-03-07 2009-03-06 복합 기판의 제조 장치 및 상기 복합 기판의 제조 장치를 사용한 복합 기판의 제조 방법 Ceased KR20090096353A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008058222 2008-03-07
JPJP-P-2008-058222 2008-03-07

Publications (1)

Publication Number Publication Date
KR20090096353A true KR20090096353A (ko) 2009-09-10

Family

ID=41052389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090019109A Ceased KR20090096353A (ko) 2008-03-07 2009-03-06 복합 기판의 제조 장치 및 상기 복합 기판의 제조 장치를 사용한 복합 기판의 제조 방법

Country Status (3)

Country Link
US (1) US20090223628A1 (https=)
JP (1) JP5409041B2 (https=)
KR (1) KR20090096353A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005517B (zh) * 2009-08-26 2013-09-18 首尔Opto仪器股份有限公司 利用激光剥离技术制造发光二极管的方法和激光剥离装置
JP2015509284A (ja) * 2011-12-28 2015-03-26 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 複数の基板を接合する方法および装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342090A (en) * 1980-06-27 1982-07-27 International Business Machines Corp. Batch chip placement system
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
JPH0410631A (ja) * 1990-04-27 1992-01-14 Mitsubishi Electric Corp 半導体チップ吸着治具
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
KR100730806B1 (ko) * 1999-10-14 2007-06-20 신에쯔 한도타이 가부시키가이샤 Ｓｏｉ웨이퍼의 제조방법 및 ｓｏｉ 웨이퍼
US6474477B1 (en) * 2001-05-02 2002-11-05 Ching T. Chang Carrier assembly for semiconductor IC (integrated circuit) packages
JP2004055860A (ja) * 2002-07-22 2004-02-19 Renesas Technology Corp 半導体装置の製造方法
KR100476591B1 (ko) * 2002-08-26 2005-03-18 삼성전자주식회사 웨이퍼 테이블과, 이를 이용한 웨이퍼 쏘잉/소자 접착장치와, 웨이퍼 쏘잉/소자 분류 장치
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US6974168B2 (en) * 2002-09-30 2005-12-13 Intel Corporation System and method for performing simultaneous precision die bond of photonic components onto a single substrate
CN1890074B (zh) * 2003-12-04 2011-03-30 三星钻石工业股份有限公司 基板加工方法、基板加工装置、基板输送方法、基板输送机构
JP4299721B2 (ja) * 2003-12-09 2009-07-22 株式会社ルネサステクノロジ 半導体装置の搬送方法および半導体装置の製造方法
JP4677717B2 (ja) * 2004-01-19 2011-04-27 株式会社Sumco Ｓｏｉウェーハの製造方法およびその装置
JP2006210898A (ja) * 2004-12-28 2006-08-10 Shin Etsu Chem Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウェーハ
KR20080042095A (ko) * 2005-07-27 2008-05-14 실리콘 제너시스 코포레이션 제어된 클리빙 처리를 이용하여 플레이트 상에 다수의 타일영역을 제작하는 방법 및 구조
JP4595740B2 (ja) * 2005-08-16 2010-12-08 パナソニック株式会社 チップ反転装置およびチップ反転方法ならびにチップ搭載装置
US7456080B2 (en) * 2005-12-19 2008-11-25 Corning Incorporated Semiconductor on glass insulator made using improved ion implantation process
TWI322476B (en) * 2006-10-05 2010-03-21 Advanced Semiconductor Eng Die bonder and die bonding method thereof
US8387674B2 (en) * 2007-11-30 2013-03-05 Taiwan Semiconductor Manufacturing Comany, Ltd. Chip on wafer bonder

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Publication number Publication date
JP5409041B2 (ja) 2014-02-05
US20090223628A1 (en) 2009-09-10
JP2009239262A (ja) 2009-10-15

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