KR20090087712A - 플라즈마 처리장치 및 방법 - Google Patents
플라즈마 처리장치 및 방법 Download PDFInfo
- Publication number
- KR20090087712A KR20090087712A KR1020080013122A KR20080013122A KR20090087712A KR 20090087712 A KR20090087712 A KR 20090087712A KR 1020080013122 A KR1020080013122 A KR 1020080013122A KR 20080013122 A KR20080013122 A KR 20080013122A KR 20090087712 A KR20090087712 A KR 20090087712A
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- South Korea
- Prior art keywords
- source
- chamber
- plasma
- sources
- production chamber
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 230000000630 rising effect Effects 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
- 피처리체에 대한 공정이 이루어지는 내부공간을 제공하는 챔버; 및상기 내부공간에 전계를 형성하여 상기 내부공간에 공급된 소스가스로부터 플라즈마를 생성하는 플라즈마 생성유닛을 포함하되,상기 플라즈마 생성유닛은,상기 챔버의 상부면과 대체로 나란하게 배치되는 상부소스;상기 상부소스에 연결되어 상기 상부소스에 제1 전류를 공급하는 상부전원;상기 챔버의 측부를 감싸는 측부소스; 및상기 측부소스에 연결되어 상기 측부소스에 제2 전류를 공급하는 측부전원을 포함하는 것을 특징으로 하는 플라즈마 처리장치.
- 제1항에 있어서,상기 플라즈마 생성유닛은,상기 상부전원과 상기 상부소스 사이에 위치하는 상부정합기; 및상기 측부전원과 상기 측부소스 사이에 위치하는 측부정합기를 더 포함하는 것을 특징으로 하는 플라즈마 처리장치.
- 제1항 또는 제2항에 있어서,상기 상부소스는 제1 상부소스, 상기 제1 상부소스와 대체로 동일한 형상을 가지며 상기 제1 상부소스와 기설정된 위상차를 가지는 제2 상부소스, 상기 제1 및 제2 상부소스와 대체로 동일한 형상을 가지며 상기 제2 상부소스와 기설정된 위상차를 가지는 제3 상부소스를 포함하는 것을 특징으로 하는 플라즈마 처리장치.
- 제1항에 있어서,상기 챔버는,상기 피처리체가 놓여지는 지지부재가 제공되며, 상기 플라즈마에 의해 공정이 이루어지는 공정챔버; 및상기 공정챔버의 상부에 제공되며, 상기 플라즈마 생성유닛에 의해 상기 플라즈마가 생성되는 생성챔버를 구비하며,상기 상부소스는 상기 생성챔버의 상부면과 대체로 나란하게 배치되며, 상기 측부소스는 상기 생성챔버의 측부에 제공되는 것을 특징으로 하는 플라즈마 처리장치.
- 챔버의 상부면과 대체로 나란하도록 상부소스를 설치하고, 상기 챔버의 측부를 감싸도록 측부소스를 설치한 상태에서,상부전원을 이용하여 상기 상부소스에 제1 전류를 공급하고, 측부전원을 이용하여 상기 측부소스에 제2 전류를 공급하여 상기 챔버의 내부공간에 플라즈마를 생성하며,생성된 상기 플라즈마를 이용하여 상기 챔버 내부에 제공된 피처리체를 처리 하는 것을 특징으로 하는 플라즈마 처리방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080013122A KR101003382B1 (ko) | 2008-02-13 | 2008-02-13 | 플라즈마 처리장치 및 방법 |
CN2009801047680A CN101952941B (zh) | 2008-02-13 | 2009-02-12 | 等离子体处理装置和等离子体处理方法 |
JP2010545811A JP2011511471A (ja) | 2008-02-13 | 2009-02-12 | プラズマ処理装置及び方法 |
US12/865,722 US20100319621A1 (en) | 2008-02-13 | 2009-02-12 | Plasma processing apparatus and plasma processing method |
PCT/KR2009/000655 WO2009102151A1 (en) | 2008-02-13 | 2009-02-12 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080013122A KR101003382B1 (ko) | 2008-02-13 | 2008-02-13 | 플라즈마 처리장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090087712A true KR20090087712A (ko) | 2009-08-18 |
KR101003382B1 KR101003382B1 (ko) | 2010-12-22 |
Family
ID=40957132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080013122A KR101003382B1 (ko) | 2008-02-13 | 2008-02-13 | 플라즈마 처리장치 및 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100319621A1 (ko) |
JP (1) | JP2011511471A (ko) |
KR (1) | KR101003382B1 (ko) |
CN (1) | CN101952941B (ko) |
WO (1) | WO2009102151A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200104422A (ko) * | 2012-10-26 | 2020-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | Pecvd 장치 및 프로세스 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101383291B1 (ko) * | 2012-06-20 | 2014-04-10 | 주식회사 유진테크 | 기판 처리 장치 |
JP6126905B2 (ja) * | 2013-05-14 | 2017-05-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101551199B1 (ko) * | 2013-12-27 | 2015-09-10 | 주식회사 유진테크 | 사이클릭 박막 증착 방법 및 반도체 제조 방법, 그리고 반도체 소자 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0773995A (ja) * | 1993-08-31 | 1995-03-17 | Tokyo Electron Ltd | プラズマ処理装置 |
JP3276023B2 (ja) * | 1993-10-20 | 2002-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置の制御方法 |
JPH07122397A (ja) * | 1993-10-28 | 1995-05-12 | Kobe Steel Ltd | プラズマ処理装置 |
JP2687867B2 (ja) * | 1994-01-19 | 1997-12-08 | 日本電気株式会社 | 半導体製造装置 |
US5919382A (en) * | 1994-10-31 | 1999-07-06 | Applied Materials, Inc. | Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor |
JP3640420B2 (ja) * | 1994-11-16 | 2005-04-20 | アネルバ株式会社 | プラズマ処理装置 |
US6270617B1 (en) * | 1995-02-15 | 2001-08-07 | Applied Materials, Inc. | RF plasma reactor with hybrid conductor and multi-radius dome ceiling |
TW279240B (en) * | 1995-08-30 | 1996-06-21 | Applied Materials Inc | Parallel-plate icp source/rf bias electrode head |
US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2000235900A (ja) * | 1999-02-15 | 2000-08-29 | Tokyo Electron Ltd | プラズマ処理装置 |
JP3837365B2 (ja) * | 2002-06-19 | 2006-10-25 | アプライド マテリアルズ インコーポレイテッド | 高密度プラズマ処理装置 |
JP2004063663A (ja) * | 2002-07-26 | 2004-02-26 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP4302630B2 (ja) * | 2002-07-26 | 2009-07-29 | プラズマート カンパニー リミテッド | 誘導結合型プラズマ発生装置 |
KR100486724B1 (ko) * | 2002-10-15 | 2005-05-03 | 삼성전자주식회사 | 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
US7273533B2 (en) * | 2003-11-19 | 2007-09-25 | Tokyo Electron Limited | Plasma processing system with locally-efficient inductive plasma coupling |
KR101214361B1 (ko) * | 2005-08-17 | 2012-12-21 | 주성엔지니어링(주) | 플라즈마 발생장치 |
JP2007103465A (ja) * | 2005-09-30 | 2007-04-19 | Tokyo Electron Ltd | プラズマ処理室 |
JP5064707B2 (ja) * | 2006-03-30 | 2012-10-31 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2007305890A (ja) * | 2006-05-15 | 2007-11-22 | Elpida Memory Inc | 半導体製造装置 |
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2008
- 2008-02-13 KR KR1020080013122A patent/KR101003382B1/ko active IP Right Grant
-
2009
- 2009-02-12 WO PCT/KR2009/000655 patent/WO2009102151A1/en active Application Filing
- 2009-02-12 JP JP2010545811A patent/JP2011511471A/ja active Pending
- 2009-02-12 US US12/865,722 patent/US20100319621A1/en not_active Abandoned
- 2009-02-12 CN CN2009801047680A patent/CN101952941B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200104422A (ko) * | 2012-10-26 | 2020-09-03 | 어플라이드 머티어리얼스, 인코포레이티드 | Pecvd 장치 및 프로세스 |
KR20210064397A (ko) * | 2012-10-26 | 2021-06-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Pecvd 장치 및 프로세스 |
US11613812B2 (en) | 2012-10-26 | 2023-03-28 | Applied Materials, Inc. | PECVD process |
US11898249B2 (en) | 2012-10-26 | 2024-02-13 | Applied Materials, Inc. | PECVD process |
Also Published As
Publication number | Publication date |
---|---|
KR101003382B1 (ko) | 2010-12-22 |
JP2011511471A (ja) | 2011-04-07 |
CN101952941A (zh) | 2011-01-19 |
WO2009102151A1 (en) | 2009-08-20 |
US20100319621A1 (en) | 2010-12-23 |
CN101952941B (zh) | 2013-01-02 |
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