KR20090066218A - 노광장치, 노광 방법 및 디바이스 제조 방법 - Google Patents
노광장치, 노광 방법 및 디바이스 제조 방법 Download PDFInfo
- Publication number
- KR20090066218A KR20090066218A KR1020080125683A KR20080125683A KR20090066218A KR 20090066218 A KR20090066218 A KR 20090066218A KR 1020080125683 A KR1020080125683 A KR 1020080125683A KR 20080125683 A KR20080125683 A KR 20080125683A KR 20090066218 A KR20090066218 A KR 20090066218A
- Authority
- KR
- South Korea
- Prior art keywords
- optical system
- projection optical
- aberration
- region
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 275
- 230000004075 alteration Effects 0.000 claims abstract description 156
- 210000001747 pupil Anatomy 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 2
- 238000005286 illumination Methods 0.000 description 30
- 238000012937 correction Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/54—Lamp housings; Illuminating means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007326584A JP2009152251A (ja) | 2007-12-18 | 2007-12-18 | 露光装置、露光方法及びデバイス製造方法 |
| JPJP-P-2007-326584 | 2007-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090066218A true KR20090066218A (ko) | 2009-06-23 |
Family
ID=40752758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080125683A Ceased KR20090066218A (ko) | 2007-12-18 | 2008-12-11 | 노광장치, 노광 방법 및 디바이스 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090153828A1 (enExample) |
| JP (1) | JP2009152251A (enExample) |
| KR (1) | KR20090066218A (enExample) |
| TW (1) | TW200942975A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010041746A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
| DE102012205096B3 (de) * | 2012-03-29 | 2013-08-29 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit mindestens einem Manipulator |
| DE102015209051B4 (de) * | 2015-05-18 | 2018-08-30 | Carl Zeiss Smt Gmbh | Projektionsobjektiv mit Wellenfrontmanipulator sowie Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage |
| JP6730850B2 (ja) * | 2016-06-01 | 2020-07-29 | キヤノン株式会社 | 露光条件の決定方法、プログラム、情報処理装置、露光装置、および物品製造方法 |
| JP6477850B2 (ja) * | 2017-12-15 | 2019-03-06 | 株式会社ニコン | 算出装置及び方法、プログラム、並びに露光方法 |
| EP3702839B1 (en) * | 2019-02-27 | 2021-11-10 | ASML Netherlands B.V. | Method of reducing effects of lens heating and/or cooling in a lithographic process |
| JP7390804B2 (ja) * | 2019-05-17 | 2023-12-04 | キヤノン株式会社 | 露光装置、露光方法、決定方法および物品製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6304317B1 (en) * | 1993-07-15 | 2001-10-16 | Nikon Corporation | Projection apparatus and method |
| JP3368091B2 (ja) * | 1994-04-22 | 2003-01-20 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
| TWI256484B (en) * | 2000-02-23 | 2006-07-01 | Asml Netherlands Bv | Method of measuring aberration in an optical imaging system |
| JP4005763B2 (ja) * | 2000-06-30 | 2007-11-14 | 株式会社東芝 | 投影光学系の収差補正方法及び半導体装置の製造方法 |
| JP4174660B2 (ja) * | 2000-12-28 | 2008-11-05 | 株式会社ニコン | 露光方法及び装置、プログラム及び情報記録媒体、並びにデバイス製造方法 |
| DE10124474A1 (de) * | 2001-05-19 | 2002-11-21 | Zeiss Carl | Mikrolithographisches Belichtungsverfahren sowie Projektionsobjektiv zur Durchführung des Verfahrens |
| EP1413870A4 (en) * | 2001-07-05 | 2006-11-15 | Nikon Corp | OPTICAL ELEMENT FOR OPTICAL LITHOGRAPHY, AND RELATIVE EVALUATION METHOD |
| DE10146499B4 (de) * | 2001-09-21 | 2006-11-09 | Carl Zeiss Smt Ag | Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie Verfahren zur Optimierung der Abbildungseigenschaften von mindestens drei optischen Elementen |
| JP2004111579A (ja) * | 2002-09-17 | 2004-04-08 | Canon Inc | 露光方法及び装置 |
| EP1496397A1 (en) * | 2003-07-11 | 2005-01-12 | ASML Netherlands B.V. | Method and system for feedforward overlay correction of pattern induced distortion and displacement, and lithographic projection apparatus using such a method and system |
| JP2005051145A (ja) * | 2003-07-31 | 2005-02-24 | Nikon Corp | 露光方法及び露光装置 |
| JP2005175407A (ja) * | 2003-12-15 | 2005-06-30 | Canon Inc | 計測方法及び装置、それを利用した露光方法及び装置、並びに、デバイス製造方法 |
| JP4497949B2 (ja) * | 2004-02-12 | 2010-07-07 | キヤノン株式会社 | 露光装置 |
| JP2006165398A (ja) * | 2004-12-09 | 2006-06-22 | Toshiba Corp | 収差測定方法及び半導体装置の製造方法 |
| JP2006173305A (ja) * | 2004-12-15 | 2006-06-29 | Canon Inc | 露光装置及び方法、並びに、デバイス製造方法 |
| JP2007157824A (ja) * | 2005-12-01 | 2007-06-21 | Nikon Corp | 結像光学系の評価方法、結像光学系の調整方法、露光装置、露光方法、およびデバイスの製造方法 |
| US7580113B2 (en) * | 2006-06-23 | 2009-08-25 | Asml Netherlands B.V. | Method of reducing a wave front aberration, and computer program product |
| US8134683B2 (en) * | 2007-02-09 | 2012-03-13 | Asml Netherlands B.V. | Device manufacturing method, computer program and lithographic apparatus |
-
2007
- 2007-12-18 JP JP2007326584A patent/JP2009152251A/ja active Pending
-
2008
- 2008-12-05 TW TW097147414A patent/TW200942975A/zh unknown
- 2008-12-11 KR KR1020080125683A patent/KR20090066218A/ko not_active Ceased
- 2008-12-15 US US12/334,675 patent/US20090153828A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20090153828A1 (en) | 2009-06-18 |
| TW200942975A (en) | 2009-10-16 |
| JP2009152251A (ja) | 2009-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20081211 |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20101021 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20110127 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20101021 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |