KR20090062720A - 반도체 챔버 라이너 - Google Patents
반도체 챔버 라이너 Download PDFInfo
- Publication number
- KR20090062720A KR20090062720A KR1020070130138A KR20070130138A KR20090062720A KR 20090062720 A KR20090062720 A KR 20090062720A KR 1020070130138 A KR1020070130138 A KR 1020070130138A KR 20070130138 A KR20070130138 A KR 20070130138A KR 20090062720 A KR20090062720 A KR 20090062720A
- Authority
- KR
- South Korea
- Prior art keywords
- liner
- semiconductor chamber
- gate hole
- reaction
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 22
- 238000003780 insertion Methods 0.000 claims description 19
- 230000037431 insertion Effects 0.000 claims description 19
- 239000012530 fluid Substances 0.000 claims description 9
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 17
- 229920000642 polymer Polymers 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (6)
- 외부와 밀폐되어 웨이퍼를 공정처리하기 위한 반응공간을 제공하되 하부에는 웨이퍼가 안착되는 정전척이 구비된 반응부와, 상기 반응부와 게이트를 통해 연통되되 상기 반응부 내부의 유체를 배기시키기 위한 배기포트가 구비된 배기부를 포함하는 반도체 챔버에 장착되는 반도체 챔버 라이너에 있어서,상기 반응부의 내벽면에 장착되되 상기 게이트에 대응되는 부분에 게이트홀이 형성된 원통부 및 상기 반응부의 하면에 장착되되 상기 원통부의 하단부로부터 내측 방향으로 일체로 연장형성된 플랜지부를 포함하는 제1라이너;일단부가 상기 게이트홀의 하측 부분에 연결되도록 결합되고 타단부가 상기 배기포트 측으로 연장형성되어, 상기 게이트홀의 하측에 장착되는 제2라이너; 및일단부가 상기 게이트홀의 상측 부분에 연결되도록 결합되고 타단부가 상기 배기부 측으로 연장형성되어, 상기 게이트홀의 상측에 장착됨과 동시에 상기 제2라이너의 상부에 결합되는 제3라이너;를 포함하는 것을 특징으로 하는 반도체 챔버 라이너.
- 제1항에 있어서,상기 제3라이너와 결합되는 제2라이너의 상측 일부분에는 적어도 하나의 결합돌기가 형성되고, 상기 결합돌기에 대응되는 제3라이너의 하측 일부분에는 결합홈이 형성된 것을 특징으로 하는 반도체 챔버 라이너.
- 제1항에 있어서,상기 제1라이너의 게이트홀에는 적어도 하나의 삽입홈이 형성되고, 상기 삽입홈에 대응되는 상기 제3라이너의 대응 부분에는 삽입돌기가 형성된 것을 특징으로 하는 반도체 챔버 라이너.
- 제1항에 있어서,상기 제2라이너의 타단부는 테이퍼 처리된 것을 특징으로 하는 반도체 챔버 라이너.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 제1라이너, 제2라이너, 제3라이너의 내측 표면이 거친 표면을 갖도록 표면처리된 것을 특징으로 하는 반도체 챔버 라이너.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 제1라이너, 제2라이너, 제3라이너는 세라믹 재질인 것을 특징으로 하는 반도체 챔버 라이너.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070130138A KR100906392B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 챔버 라이너 |
PCT/KR2008/007368 WO2009075544A2 (en) | 2007-12-13 | 2008-12-12 | A liner for semiconductor chamber |
TW097148648A TW200947585A (en) | 2007-12-13 | 2008-12-12 | A liner for semiconductor chamber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070130138A KR100906392B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 챔버 라이너 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090062720A true KR20090062720A (ko) | 2009-06-17 |
KR100906392B1 KR100906392B1 (ko) | 2009-07-07 |
Family
ID=40755994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070130138A KR100906392B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 챔버 라이너 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100906392B1 (ko) |
TW (1) | TW200947585A (ko) |
WO (1) | WO2009075544A2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012128783A1 (en) * | 2011-03-22 | 2012-09-27 | Applied Materials, Inc. | Liner assembly for chemical vapor deposition chamber |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10923327B2 (en) | 2018-08-01 | 2021-02-16 | Applied Materials, Inc. | Chamber liner |
US11270898B2 (en) * | 2018-09-16 | 2022-03-08 | Applied Materials, Inc. | Apparatus for enhancing flow uniformity in a process chamber |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7011039B1 (en) | 2000-07-07 | 2006-03-14 | Applied Materials, Inc. | Multi-purpose processing chamber with removable chamber liner |
KR20040011839A (ko) * | 2002-07-30 | 2004-02-11 | 삼성전자주식회사 | 라이너를 갖는 플라즈마 식각 챔버 |
KR20060080686A (ko) * | 2005-01-06 | 2006-07-11 | 삼성전자주식회사 | 반도체 식각설비 |
KR200431206Y1 (ko) | 2006-05-03 | 2006-11-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 삽입부 없이 고종횡비 미세구조물을 에칭하기에 적절한상부 챔버 라이너 |
-
2007
- 2007-12-13 KR KR1020070130138A patent/KR100906392B1/ko active IP Right Grant
-
2008
- 2008-12-12 TW TW097148648A patent/TW200947585A/zh unknown
- 2008-12-12 WO PCT/KR2008/007368 patent/WO2009075544A2/en active Application Filing
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012128783A1 (en) * | 2011-03-22 | 2012-09-27 | Applied Materials, Inc. | Liner assembly for chemical vapor deposition chamber |
KR20140018939A (ko) * | 2011-03-22 | 2014-02-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기상 증착 챔버를 위한 라이너 조립체 |
US8980005B2 (en) | 2011-03-22 | 2015-03-17 | Applied Materials, Inc. | Liner assembly for chemical vapor deposition chamber |
TWI551720B (zh) * | 2011-03-22 | 2016-10-01 | 應用材料股份有限公司 | 用於化學氣相沉積腔室之襯套組件 |
US9695508B2 (en) | 2011-03-22 | 2017-07-04 | Applied Materials, Inc. | Liner assembly for chemical vapor deposition chamber |
Also Published As
Publication number | Publication date |
---|---|
TW200947585A (en) | 2009-11-16 |
WO2009075544A2 (en) | 2009-06-18 |
KR100906392B1 (ko) | 2009-07-07 |
WO2009075544A3 (en) | 2009-09-11 |
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