KR20080114492A - 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 - Google Patents
유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 Download PDFInfo
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Abstract
Description
흡광제 | 중합체 | TMMG * | TAG * | PGMEA * | EL * | |
실시예1 | A 0.59% | 0.69% | 0.19% | 0.09% | 98.42% | - |
실시예2 | A 0.80% | 0.70% | 0.21% | 0.10% | - | 98.19% |
실시예3 | B 1.00% | 0.80% | 0.27% | 0.054% | 97.87% | - |
실시예 4 | C 0.60% | 0.80% | 0.28% | 0.054% | 98.26% | - |
실시예 5 | D 0.40% | 0.80% | 0.17% | 0.04% | 98.59% | - |
실시예 6 | E 0.40% | 0.80% | 0.17% | 0.04% | 98.59% | - |
실시예 7 | E 0.50% | 0.50% | 0.14% | 0.03% | 98.83% | - |
스트리핑 | 굴절률 | 흡광계수 | 에너지마진 | 포커스마진 | 건식에칭선택성 | |
실시예 1 | OK | 1.77 | 0.44 | 25% | 0.3㎛ | 2.25 |
실시예 2 | OK | 1.79 | 0.47 | 23% | 0.3㎛ | 2.35 |
실시예 3 | OK | 1.65 | 0.32 | 22% | 0.3㎛ | 2.20 |
실시예 4 | OK | 1.72 | 0.35 | 22% | 0.2㎛ | 2.30 |
실시예 5 | OK | 1.68 | 0.30 | 22% | 0.3㎛ | 2.28 |
실시예 6 | OK | 1.75 | 0.35 | 22% | 0.25㎛ | 2.25 |
실시예 7 | OK | 1.78 | 0.39 | 21% | 0.25㎛ | 2.20 |
Claims (17)
- 상기 화학식 1로 표시되는 유기 반사 방지막용 공중합체, 흡광제, 열산발생제 및 경화제를 포함하는 유기 반사 방지막 조성물.
- 제 2항 내지 제 4항 중 어느 한 항에 있어서,상기 경화제는 화합물당 2개 이상의 가교 형성 관능기를 갖고, 아미노플라스틱 화합물, 다관능성 에폭시 레진, 언하이드라이드 및 이들의 혼합물로 이루어진 군으로부터 선택된 것임을 특징으로 하는 유기 반사 방지막 조성물.
- 제 5항에 있어서,상기 가교 형성 관능기는 옥세타닐기, 옥사졸린기, 시클로카보네이트기, 알코올시 시릴기, 아미노 메틸올기 또는 알콕시메틸기, 아지리디닐기, 메틸올기, 이소시아네이트기, 알콕시메틸아미노기, 혹은 다관능성 에폭시기로 이루어진 군으로부터 단독 혹은 2개 이상 선택된 것을 특징으로 하는 유기 반사 방지막 조성물.
- 제 2항에 있어서,상기 조성물은 프로필렌글리콜 모노메틸에테르(PGME), 프로필렌글리콜 모노메틸에테르 아세테이트(PGMEA), 시클로헥사논, 에틸락테이트, 프로필렌글리콜 n-프로필에테르, 디메틸포름아미드(DMF), 감마-부티로락톤, 에톡시 에탄올, 메톡시 에탄올, 메틸 3-메톡시프로피오네이트(MMP) 및 에틸 3-에톡시프로피오네이트(EEP)로 이루어진 군으로부터 선택된 1종 이상의 용매를 포함하는 것을 특징으로 하는 유기 반사 방지막 조성물.
- 제 2항에 있어서,상기 조성물은 유기 반사 방지막용 공중합체 0.1 내지 40 중량%, 흡광제 0.1 내지 40 중량%, 열산발생제 0.01 내지 20 중량% 및 경화제 0.01 내지 40 중량%를 포함하는 것임을 특징으로 하는 유기 반사 방지막 조성물.
- 제 1항에 있어서,상기 화학식 1은 말레익 언하이드라이드와 아크릴레이트계 화합물을 중합시켜 제조된 하기 화학식 2의 반응중간체와 탄소수 1 내지 10의 알킬 알코올을 반응시켜 생성되는 유기 반사 방지막용 공중합체임을 특징으로 하는 유기 반사 방지막 조성물.[화학식 2]상기 식에서 R2는 수소, 탄소원자 1내지 10의 알킬기, 탄소원자 1내지 20의 아릴알킬기를 나타내고, R3는 수소 혹은 메틸기이다. m, n은 각각 주사슬 내에 반복단위를 나타내는 수로서, m+n=1이고, 0.05<m/(m+n)<0.95, 0.05<n/(m+n)<0.95의 값을 갖는다.
- 제 10항에 있어서,상기 아크릴레이트계 화합물로는 메틸아크릴레이트, 에틸아크릴레이트, 이소프로필아크릴레이트, 노멀프로필아크릴레이트, 노멀부틸아크릴레이트, 이소부틸아 크릴레이트, tert-부틸아크릴레이트, 시클로헥실아크릴레이트, 이소보르닐아크릴레이트, 2-에틸헥실아크릴레이트, 메틸메타크릴레이트, 에틸메타크릴레이트, 이소프로필메타크릴레이트, 노멀프로필메타크릴레이트, tert-부틸메타크릴레이트, 노멀부틸메타크릴레이트, 이소부틸메타크릴레이트 시클로헥실메타크릴레이트, 이소보르닐메타크릴레이트, 2-에틸헥실메타크릴레이트, 벤질메타크릴레이트, 1-나프틸메틸메타아크릴레이트, 2-나프틸메틸메타아크릴레이트, 9-안트릴메틸메타크릴레이트, 1-안트릴메틸메타크릴레이트, 2-안트릴메틸메타크릴레이트로 이루어진 군으로부터 선택된 것임을 특징으로 하는 유기 반사 방지막 조성물.
- 제 2항 내지 제 4항 중 어느 한 항에 의한 유기 반사 방지막 조성물을 피식각층 상부에 도포하는 단계;도포된 조성물을 베이킹 공정을 통해 경화시키고, 가교 결합을 형성시켜 유기 반사 방지막을 형성하는 방지막형성단계;유기 반사 방지막 상부에 포토레지스트를 도포하고, 노광 후 현상하여 포토레지스트 패턴을 형성하는 단계; 및포토레지스트 패턴을 식각 마스크로 하여 유기 반사 방지막을 식각한 후, 피식각층을 식각하여 피식각층의 패턴을 형성하는 단계를 포함하는 반도체 소자의 패턴 형성 방법.
- 제 13항에 있어서,상기 베이킹 공정은 150 내지 250℃에서 1 내지 5분간 진행하는 것을 특징으로 하는 반도체 소자의 패턴 형성 방법.
- 제 13항 또는 제 14항에 있어서,포토레지스트 패턴 형성 단계 중 노광하기 전후에 제2베이킹 공정이 더 포함되는 것을 특징으로 하는 반도체 소자의 패턴 형성 방법.
- 제 15항에 있어서,상기 제2베이킹 공정은 70 내지 200℃에서 수행되는 것을 특징으로 하는 반도체 소자의 패턴 형성 방법.
- 제 13항 내지 제16항 중의 어느 한 항에 의한 패턴 형성 방법을 통하여 제조된 반도체 소자.
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JP2008147792A JP5305744B2 (ja) | 2007-06-25 | 2008-06-05 | 有機反射防止膜用共重合体および組成物 |
US12/214,430 US8021826B2 (en) | 2007-06-25 | 2008-06-19 | Copolymer and composition for organic and antireflective layer |
SG200808638-1A SG156561A1 (en) | 2008-04-16 | 2008-11-19 | Copolymer and composition for organic antireflective layer |
CN 200810180434 CN101560279B (zh) | 2008-04-16 | 2008-11-27 | 用于有机抗反射涂层的组合物及共聚物 |
TW97147226A TW200944546A (en) | 2008-04-16 | 2008-12-05 | Copolymer and composition for organic antireflective layer |
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US8822617B2 (en) | 2011-04-26 | 2014-09-02 | Korea Kumho Petrochemical Co., Ltd. | Copolymer for organic antireflective film, monomer, and composition comprising the copolymer |
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US20080318167A1 (en) | 2008-12-25 |
US8021826B2 (en) | 2011-09-20 |
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