KR20080105957A - 웨이퍼 세정방법 - Google Patents
웨이퍼 세정방법 Download PDFInfo
- Publication number
- KR20080105957A KR20080105957A KR1020070097038A KR20070097038A KR20080105957A KR 20080105957 A KR20080105957 A KR 20080105957A KR 1020070097038 A KR1020070097038 A KR 1020070097038A KR 20070097038 A KR20070097038 A KR 20070097038A KR 20080105957 A KR20080105957 A KR 20080105957A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- cleaning
- atmospheric pressure
- pressure plasma
- bonding
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 172
- 238000000034 method Methods 0.000 title claims abstract description 115
- 238000004381 surface treatment Methods 0.000 claims abstract description 58
- 239000007788 liquid Substances 0.000 claims description 48
- 238000001035 drying Methods 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 238000007664 blowing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 237
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000243 solution Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
Claims (11)
- 공정챔버에 웨이퍼의 접합면이 상부를 향하도록 상기 웨이퍼를 장입하는 웨이퍼 장입단계;상기 웨이퍼의 접합면에 상압 플라즈마와 세정액을 공급하여 상기 웨이퍼의 접합면을 세정 및 표면처리하는 웨이퍼 세정 및 표면처리단계 및상기 웨이퍼를 상기 공정챔버에서 인출하는 웨이퍼 인출단계를 포함하는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 공정챔버는 상압 플라즈마와 세정액을 함께 공급할 수 있도록 형성되는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 상압 플라즈마를 형성하기 위한 활성 가스는 질소, 산소, 아르곤(Ar) 및 헬륨(He)으로 이루어지는 군에서 선택되는 어느 하나의 가스 또는 이들의 혼합가스인 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 세정액은 탈이온수 또는 H2O2-NH4OH-H2O(SC-1)용액인 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 상압 플라즈마와 세정액은 동시에 또는 순차적으로 공급되는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 세정액은 가열, 초음파에 의하여 증기 형태의 입자상으로 공급되는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 세정액은 노즐 분사에 의하여 입자상으로 공급되는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 웨이퍼 세정 및 표면처리 단계는 상기 웨이퍼를 회전시키면서 상기 상압 플라즈마와 세정액이 상기 웨이퍼에 공급되도록 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 제1웨이퍼 세정 및 표면처리 단계는 상기 상압 플라즈마와 세정액이 상기 웨이퍼의 일측에서 타측으로 순차적으로 공급되도록 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 1항에 있어서,상기 웨이퍼 세정 및 표면처리 단계 후에는 상기 웨이퍼를 건조하는 건조 단계를 더 포함하는 것을 특징으로 하는 웨이퍼 세정방법.
- 제 10항에 있어서,상기 건조 단계는 상기 웨이퍼를 회전시켜 건조하는 스핀 건조 방법 또는 상기 웨이퍼의 접합면에 불활성 가스를 블로잉하여 건조하는 블로잉 건조방법으로 이루어지는 것을 특징으로 하는 웨이퍼 세정방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2007/005446 WO2008146994A1 (en) | 2007-06-01 | 2007-10-31 | Wafer cleaning method and wafer bonding method using the same |
US12/602,285 US8278186B2 (en) | 2007-06-01 | 2007-10-31 | Wafer cleaning method and wafer bonding method using the same |
JP2010510186A JP2010528484A (ja) | 2007-06-01 | 2007-10-31 | ウェーハ洗浄方法及びそれを利用したウェーハボンディング方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070053932 | 2007-06-01 | ||
KR20070053932 | 2007-06-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080105957A true KR20080105957A (ko) | 2008-12-04 |
KR100893182B1 KR100893182B1 (ko) | 2009-04-15 |
Family
ID=40367149
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070097037A KR100936778B1 (ko) | 2007-06-01 | 2007-09-21 | 웨이퍼 본딩방법 |
KR1020070097038A KR100893182B1 (ko) | 2007-06-01 | 2007-09-21 | 웨이퍼 세정방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070097037A KR100936778B1 (ko) | 2007-06-01 | 2007-09-21 | 웨이퍼 본딩방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8278186B2 (ko) |
JP (1) | JP2010528484A (ko) |
KR (2) | KR100936778B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101325379B1 (ko) * | 2011-12-28 | 2013-11-08 | 주식회사 포스코 | 대기압 플라즈마 탈지 장치 |
Families Citing this family (18)
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---|---|---|---|---|
JP4786693B2 (ja) * | 2008-09-30 | 2011-10-05 | 三菱重工業株式会社 | ウェハ接合装置およびウェハ接合方法 |
KR101173124B1 (ko) | 2010-07-01 | 2012-08-14 | 주식회사 엔티에스 | 기판 본딩 장치 및 기판 본딩 장치와 기판 연마 장치를 포함하는 기판 가공 장치 |
US8844793B2 (en) * | 2010-11-05 | 2014-09-30 | Raytheon Company | Reducing formation of oxide on solder |
US8778737B2 (en) | 2011-10-31 | 2014-07-15 | International Business Machines Corporation | Flattened substrate surface for substrate bonding |
US8809123B2 (en) | 2012-06-05 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers |
US9048283B2 (en) | 2012-06-05 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding systems and methods for semiconductor wafers |
US9446467B2 (en) | 2013-03-14 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrate rinse module in hybrid bonding platform |
WO2015043624A1 (de) * | 2013-09-25 | 2015-04-02 | Ev Group E. Thallner Gmbh | Vorrichtung und verfahren zum bonden von substraten |
RU2541436C1 (ru) * | 2013-11-11 | 2015-02-10 | Открытое акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (ОАО "Российские космические системы") | Способ плазмохимической обработки подложек из поликора и ситалла |
US9917069B2 (en) | 2015-03-31 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Hybrid bonding system and cleaning method thereof |
KR101921639B1 (ko) * | 2016-11-22 | 2018-11-26 | 한국기계연구원 | 미세패턴 또는 미세채널 형성을 위한 직접 열가압 임프린트 방법 |
FR3079660B1 (fr) * | 2018-03-29 | 2020-04-17 | Soitec | Procede de transfert d'une couche |
US11158573B2 (en) * | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
CN112885777B (zh) | 2020-01-07 | 2022-12-09 | 长江存储科技有限责任公司 | 金属-电介质键合方法和结构 |
KR102630226B1 (ko) | 2021-09-23 | 2024-01-29 | 한화정밀기계 주식회사 | 하이브리드 본딩 장치 및 이를 이용하는 하이브리드 본딩 방법 |
KR102647322B1 (ko) | 2021-09-23 | 2024-03-13 | 한화정밀기계 주식회사 | 모듈화된 본딩 장치 |
CN114335256B (zh) * | 2022-03-10 | 2022-05-20 | 北京通美晶体技术股份有限公司 | 一种干法清洗锗晶片的方法 |
KR102586083B1 (ko) * | 2022-07-15 | 2023-10-05 | 성균관대학교산학협력단 | 웨이퍼 본딩 방법 및 웨이퍼 본딩 시스템 |
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JP2811820B2 (ja) * | 1989-10-30 | 1998-10-15 | 株式会社ブリヂストン | シート状物の連続表面処理方法及び装置 |
US6006763A (en) * | 1995-01-11 | 1999-12-28 | Seiko Epson Corporation | Surface treatment method |
JP3753194B2 (ja) | 1995-12-14 | 2006-03-08 | セイコーエプソン株式会社 | プラズマ処理方法及びその装置 |
JPH09275085A (ja) | 1996-04-05 | 1997-10-21 | Hitachi Ltd | 半導体基板の洗浄方法ならびに洗浄装置および半導体基板製造用成膜方法および成膜装置 |
JPH11345797A (ja) | 1998-06-02 | 1999-12-14 | Shimada Phys & Chem Ind Co Ltd | 2流体噴出ノズル及びこれを使用した2流体噴流洗浄装置並びに2流体噴流洗浄方法 |
KR20010005081A (ko) * | 1999-06-30 | 2001-01-15 | 김영환 | 반도체 제조용 식각 장비의 클리닝 방법 |
US6546938B2 (en) * | 2001-03-12 | 2003-04-15 | The Regents Of The University Of California | Combined plasma/liquid cleaning of substrates |
KR100431889B1 (ko) * | 2001-07-05 | 2004-05-17 | 주식회사 우광유니텍 | 건식 세정/에싱 방법 및 장치 |
KR100442310B1 (ko) * | 2001-11-28 | 2004-07-30 | 최우범 | 플라즈마 전처리를 구비한 기판접합장치 및 그 제어방법 |
US20040045578A1 (en) * | 2002-05-03 | 2004-03-11 | Jackson David P. | Method and apparatus for selective treatment of a precision substrate surface |
KR20050004156A (ko) * | 2002-05-17 | 2005-01-12 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치 및 기판처리방법 |
FR2868599B1 (fr) * | 2004-03-30 | 2006-07-07 | Soitec Silicon On Insulator | Traitement chimique optimise de type sc1 pour le nettoyage de plaquettes en materiau semiconducteur |
JP4615246B2 (ja) * | 2004-05-07 | 2011-01-19 | 株式会社デジタルネットワーク | 洗浄方法 |
JP2006258958A (ja) * | 2005-03-15 | 2006-09-28 | Shibaura Mechatronics Corp | 基板接着方法及び基板接着装置 |
US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
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2007
- 2007-09-21 KR KR1020070097037A patent/KR100936778B1/ko active IP Right Grant
- 2007-09-21 KR KR1020070097038A patent/KR100893182B1/ko active IP Right Grant
- 2007-10-31 US US12/602,285 patent/US8278186B2/en not_active Expired - Fee Related
- 2007-10-31 JP JP2010510186A patent/JP2010528484A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101325379B1 (ko) * | 2011-12-28 | 2013-11-08 | 주식회사 포스코 | 대기압 플라즈마 탈지 장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20080105956A (ko) | 2008-12-04 |
US20100261332A1 (en) | 2010-10-14 |
KR100936778B1 (ko) | 2010-01-14 |
US8278186B2 (en) | 2012-10-02 |
KR100893182B1 (ko) | 2009-04-15 |
JP2010528484A (ja) | 2010-08-19 |
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