KR20080071945A - 기판 세정 장치, 기판 세정 방법 및 기억 매체 - Google Patents

기판 세정 장치, 기판 세정 방법 및 기억 매체 Download PDF

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Publication number
KR20080071945A
KR20080071945A KR1020080010214A KR20080010214A KR20080071945A KR 20080071945 A KR20080071945 A KR 20080071945A KR 1020080010214 A KR1020080010214 A KR 1020080010214A KR 20080010214 A KR20080010214 A KR 20080010214A KR 20080071945 A KR20080071945 A KR 20080071945A
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KR
South Korea
Prior art keywords
hydrogen peroxide
sulfuric acid
substrate
peroxide water
mixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080010214A
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English (en)
Korean (ko)
Inventor
고우키치 히로시로
다카유키 도시마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20080071945A publication Critical patent/KR20080071945A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020080010214A 2007-01-31 2008-01-31 기판 세정 장치, 기판 세정 방법 및 기억 매체 Ceased KR20080071945A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00022004 2007-01-31
JP2007022004A JP4863897B2 (ja) 2007-01-31 2007-01-31 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム

Publications (1)

Publication Number Publication Date
KR20080071945A true KR20080071945A (ko) 2008-08-05

Family

ID=39341364

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080010214A Ceased KR20080071945A (ko) 2007-01-31 2008-01-31 기판 세정 장치, 기판 세정 방법 및 기억 매체

Country Status (6)

Country Link
US (1) US20080178910A1 (https=)
EP (1) EP1952899B1 (https=)
JP (1) JP4863897B2 (https=)
KR (1) KR20080071945A (https=)
DE (1) DE602008000514D1 (https=)
TW (1) TW200845159A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4762822B2 (ja) 2006-08-03 2011-08-31 東京エレクトロン株式会社 薬液混合方法および薬液混合装置
JP2011129651A (ja) * 2009-12-16 2011-06-30 Renesas Electronics Corp 半導体装置の製造方法、基板処理装置、および、プログラム
US20110259376A1 (en) * 2010-04-27 2011-10-27 Wagener Thomas J Wet processing of microelectronic substrates with controlled mixing of fluids proximal to substrate surfaces
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP6016093B2 (ja) * 2012-09-12 2016-10-26 株式会社Ｓｃｒｅｅｎホールディングス 薬液供給装置、基板処理システム、および基板処理方法
TWI675905B (zh) 2015-11-14 2019-11-01 日商東京威力科創股份有限公司 使用稀釋的氫氧化四甲基銨處理微電子基板的方法
JP6779701B2 (ja) * 2016-08-05 2020-11-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理方法を実行させるプログラムが記録された記憶媒体
JP6768146B2 (ja) * 2017-04-06 2020-10-14 東京エレクトロン株式会社 液供給装置および液供給方法
JP7403320B2 (ja) 2020-01-07 2023-12-22 東京エレクトロン株式会社 基板処理装置

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US2576050A (en) * 1948-02-24 1951-11-20 Merle A Soden Milk temperature conditioning vessel
US2960382A (en) * 1955-05-13 1960-11-15 Armstrong Cork Co Method of bleaching linoleum using hydrogen peroxide bleach
US3640916A (en) * 1968-12-16 1972-02-08 Johnson & Son Inc S C Foam producing compositions
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
EP0285725B1 (en) * 1987-04-10 1992-09-30 Chugoku Kayaku Kabushiki Kaisha Mixing apparatus
US5395649A (en) * 1992-02-04 1995-03-07 Sony Corporation Spin coating apparatus for film formation over substrate
JP3277404B2 (ja) * 1993-03-31 2002-04-22 ソニー株式会社 基板洗浄方法及び基板洗浄装置
US5950645A (en) 1993-10-20 1999-09-14 Verteq, Inc. Semiconductor wafer cleaning system
JPH07161674A (ja) * 1993-12-08 1995-06-23 Mitsubishi Electric Corp 半導体ウエハの処理装置およびその処理方法
JPH08316190A (ja) * 1995-05-18 1996-11-29 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH0969509A (ja) * 1995-09-01 1997-03-11 Matsushita Electron Corp 半導体ウェーハの洗浄・エッチング・乾燥装置及びその使用方法
JP3164048B2 (ja) * 1997-12-16 2001-05-08 日本電気株式会社 半導体製造装置
US6568845B1 (en) * 1998-10-26 2003-05-27 Matrix Global Technology Ltd. Mixing element body for stationary type mixer
JP3212958B2 (ja) * 1998-12-11 2001-09-25 九州日本電気株式会社 薬液濃度制御装置
US6494219B1 (en) * 2000-03-22 2002-12-17 Applied Materials, Inc. Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits
US6299697B1 (en) * 1999-08-25 2001-10-09 Shibaura Mechatronics Corporation Method and apparatus for processing substrate
KR100740311B1 (ko) * 2000-07-14 2007-07-26 에이비 이니티오 엘씨 산화제 합성방법 및 그의 응용
US20040154641A1 (en) * 2002-05-17 2004-08-12 P.C.T. Systems, Inc. Substrate processing apparatus and method
US20040159335A1 (en) * 2002-05-17 2004-08-19 P.C.T. Systems, Inc. Method and apparatus for removing organic layers
US20040000322A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Point-of-use mixing with H2SO4 and H2O2 on top of a horizontally spinning wafer
JP4494840B2 (ja) * 2003-06-27 2010-06-30 大日本スクリーン製造株式会社 異物除去装置、基板処理装置および基板処理方法
KR100734669B1 (ko) 2003-08-08 2007-07-02 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법 및 그 장치
JP2005183937A (ja) * 2003-11-25 2005-07-07 Nec Electronics Corp 半導体装置の製造方法およびレジスト除去用洗浄装置
US7632756B2 (en) * 2004-08-26 2009-12-15 Applied Materials, Inc. Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
JP2006108304A (ja) * 2004-10-04 2006-04-20 Nec Electronics Corp 基板処理装置
US20060254616A1 (en) * 2005-05-11 2006-11-16 Brian Brown Temperature control of a substrate during wet processes
US7432177B2 (en) * 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
JP4672487B2 (ja) * 2005-08-26 2011-04-20 大日本スクリーン製造株式会社 レジスト除去方法およびレジスト除去装置
JP4986566B2 (ja) * 2005-10-14 2012-07-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US20080060682A1 (en) * 2006-09-13 2008-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. High temperature spm treatment for photoresist stripping

Also Published As

Publication number Publication date
JP4863897B2 (ja) 2012-01-25
EP1952899A1 (en) 2008-08-06
TWI373796B (https=) 2012-10-01
US20080178910A1 (en) 2008-07-31
DE602008000514D1 (de) 2010-03-04
JP2008183550A (ja) 2008-08-14
EP1952899B1 (en) 2010-01-13
TW200845159A (en) 2008-11-16

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