KR20080032119A - 전기 소자를 제조하는 방법 - Google Patents

전기 소자를 제조하는 방법 Download PDF

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Publication number
KR20080032119A
KR20080032119A KR1020087001970A KR20087001970A KR20080032119A KR 20080032119 A KR20080032119 A KR 20080032119A KR 1020087001970 A KR1020087001970 A KR 1020087001970A KR 20087001970 A KR20087001970 A KR 20087001970A KR 20080032119 A KR20080032119 A KR 20080032119A
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KR
South Korea
Prior art keywords
self
electrode
assembled system
assembled
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087001970A
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English (en)
Korean (ko)
Inventor
힐케 비 악케르만
버트 데 보어
파울루스 더블유 엠. 브롬
다가버트 엠 데 리우
토마스 씨. 티 제운스
에우제니오 칸타토레
Original Assignee
코닌클리케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리케 필립스 일렉트로닉스 엔.브이.
Publication of KR20080032119A publication Critical patent/KR20080032119A/ko
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
KR1020087001970A 2005-07-27 2006-07-21 전기 소자를 제조하는 방법 Withdrawn KR20080032119A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05106926.8 2005-07-27
EP05106926 2005-07-27

Publications (1)

Publication Number Publication Date
KR20080032119A true KR20080032119A (ko) 2008-04-14

Family

ID=37450775

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087001970A Withdrawn KR20080032119A (ko) 2005-07-27 2006-07-21 전기 소자를 제조하는 방법

Country Status (7)

Country Link
US (1) US20080203384A1 (https=)
EP (1) EP1911109A1 (https=)
JP (1) JP2009503838A (https=)
KR (1) KR20080032119A (https=)
CN (1) CN101228646A (https=)
TW (1) TW200742140A (https=)
WO (1) WO2007013015A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046720B1 (ko) * 2008-06-30 2011-07-05 주식회사 하이닉스반도체 분자 전자 소자 및 그 제조 방법
KR20200010015A (ko) * 2018-07-18 2020-01-30 고려대학교 산학협력단 터널링 전류의 디콘볼루션 특성을 갖는 혼성 자기조립 단층 및 이를 포함하는 분자전자소자

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2144310A1 (en) * 2008-07-10 2010-01-13 Koninklijke Philips Electronics N.V. Light emitting device
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
CN102802346B (zh) * 2011-05-27 2015-08-05 中国科学院理化技术研究所 一种液态金属印刷电路板及其制备方法
US9380979B2 (en) * 2012-11-02 2016-07-05 Nokia Technologies Oy Apparatus and method of assembling an apparatus for sensing pressure
EP2948968B1 (en) 2013-01-28 2018-03-28 Massachusetts Institute of Technology Electromechanical device
US9412806B2 (en) * 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9742466B2 (en) * 2015-05-04 2017-08-22 Thin Film Electronics Asa MOSCAP-based circuitry for wireless communication devices, and methods of making and using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0130485D0 (en) * 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
JP4974263B2 (ja) * 2002-05-20 2012-07-11 富士通株式会社 半導体装置の製造方法
GB0309355D0 (en) * 2003-04-24 2003-06-04 Univ Cambridge Tech Organic electronic devices incorporating semiconducting polymer
JP4208668B2 (ja) * 2003-08-22 2009-01-14 富士通株式会社 半導体装置およびその製造方法
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046720B1 (ko) * 2008-06-30 2011-07-05 주식회사 하이닉스반도체 분자 전자 소자 및 그 제조 방법
US8035137B2 (en) 2008-06-30 2011-10-11 Hynix Semiconductor Inc. Molecular electronic device having a patterned electrode and method of fabricating the same
KR20200010015A (ko) * 2018-07-18 2020-01-30 고려대학교 산학협력단 터널링 전류의 디콘볼루션 특성을 갖는 혼성 자기조립 단층 및 이를 포함하는 분자전자소자

Also Published As

Publication number Publication date
EP1911109A1 (en) 2008-04-16
US20080203384A1 (en) 2008-08-28
JP2009503838A (ja) 2009-01-29
CN101228646A (zh) 2008-07-23
WO2007013015A1 (en) 2007-02-01
TW200742140A (en) 2007-11-01

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