JP2009503838A - 電気素子を製造する方法 - Google Patents

電気素子を製造する方法 Download PDF

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Publication number
JP2009503838A
JP2009503838A JP2008523511A JP2008523511A JP2009503838A JP 2009503838 A JP2009503838 A JP 2009503838A JP 2008523511 A JP2008523511 A JP 2008523511A JP 2008523511 A JP2008523511 A JP 2008523511A JP 2009503838 A JP2009503838 A JP 2009503838A
Authority
JP
Japan
Prior art keywords
self
electrode
contact layer
monolayer
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008523511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009503838A5 (https=
Inventor
ヒルケ ビー アッケルマン
ブール ベルト デ
パウルス ダブリュ エム ブロム
レーウ ダゴベルト エム デ
トーマス シー ティー フーンス
エウジェニオ カンタトーレ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2009503838A publication Critical patent/JP2009503838A/ja
Publication of JP2009503838A5 publication Critical patent/JP2009503838A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2008523511A 2005-07-27 2006-07-21 電気素子を製造する方法 Pending JP2009503838A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05106926 2005-07-27
PCT/IB2006/052510 WO2007013015A1 (en) 2005-07-27 2006-07-21 Method of manufacturing an electrical element

Publications (2)

Publication Number Publication Date
JP2009503838A true JP2009503838A (ja) 2009-01-29
JP2009503838A5 JP2009503838A5 (https=) 2009-09-03

Family

ID=37450775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008523511A Pending JP2009503838A (ja) 2005-07-27 2006-07-21 電気素子を製造する方法

Country Status (7)

Country Link
US (1) US20080203384A1 (https=)
EP (1) EP1911109A1 (https=)
JP (1) JP2009503838A (https=)
KR (1) KR20080032119A (https=)
CN (1) CN101228646A (https=)
TW (1) TW200742140A (https=)
WO (1) WO2007013015A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101046720B1 (ko) * 2008-06-30 2011-07-05 주식회사 하이닉스반도체 분자 전자 소자 및 그 제조 방법
EP2144310A1 (en) * 2008-07-10 2010-01-13 Koninklijke Philips Electronics N.V. Light emitting device
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
CN102802346B (zh) * 2011-05-27 2015-08-05 中国科学院理化技术研究所 一种液态金属印刷电路板及其制备方法
US9380979B2 (en) * 2012-11-02 2016-07-05 Nokia Technologies Oy Apparatus and method of assembling an apparatus for sensing pressure
EP2948968B1 (en) 2013-01-28 2018-03-28 Massachusetts Institute of Technology Electromechanical device
US9412806B2 (en) * 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9742466B2 (en) * 2015-05-04 2017-08-22 Thin Film Electronics Asa MOSCAP-based circuitry for wireless communication devices, and methods of making and using the same
KR102227004B1 (ko) * 2018-07-18 2021-03-12 고려대학교 산학협력단 터널링 전류의 디콘볼루션 특성을 갖는 혼성 자기조립 단층 및 이를 포함하는 분자전자소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338621A (ja) * 2002-05-20 2003-11-28 Fujitsu Ltd 半導体装置及びその製造方法
WO2004095599A1 (en) * 2003-04-24 2004-11-04 Cambridge University Technical Services Limited Organic electronic devices incorporating semiconducting polymer brushes
JP2005072171A (ja) * 2003-08-22 2005-03-17 Fujitsu Ltd 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0130485D0 (en) * 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338621A (ja) * 2002-05-20 2003-11-28 Fujitsu Ltd 半導体装置及びその製造方法
WO2004095599A1 (en) * 2003-04-24 2004-11-04 Cambridge University Technical Services Limited Organic electronic devices incorporating semiconducting polymer brushes
JP2005072171A (ja) * 2003-08-22 2005-03-17 Fujitsu Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP1911109A1 (en) 2008-04-16
US20080203384A1 (en) 2008-08-28
CN101228646A (zh) 2008-07-23
KR20080032119A (ko) 2008-04-14
WO2007013015A1 (en) 2007-02-01
TW200742140A (en) 2007-11-01

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