KR20080010458A - 전장 발광 광원 - Google Patents
전장 발광 광원 Download PDFInfo
- Publication number
- KR20080010458A KR20080010458A KR1020077028947A KR20077028947A KR20080010458A KR 20080010458 A KR20080010458 A KR 20080010458A KR 1020077028947 A KR1020077028947 A KR 1020077028947A KR 20077028947 A KR20077028947 A KR 20077028947A KR 20080010458 A KR20080010458 A KR 20080010458A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- substrate
- layer
- full length
- outcoupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000009826 distribution Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 8
- 230000005684 electric field Effects 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920013617 polymethylmethyacrylimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Details Of Measuring Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05103973 | 2005-05-12 | ||
| EP05103973.3 | 2005-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20080010458A true KR20080010458A (ko) | 2008-01-30 |
Family
ID=36809177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077028947A Ceased KR20080010458A (ko) | 2005-05-12 | 2006-05-03 | 전장 발광 광원 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080197764A1 (enExample) |
| EP (1) | EP1883977A1 (enExample) |
| JP (1) | JP2008541368A (enExample) |
| KR (1) | KR20080010458A (enExample) |
| CN (1) | CN101176214A (enExample) |
| TW (1) | TW200713640A (enExample) |
| WO (1) | WO2006120610A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9172057B2 (en) | 2011-06-30 | 2015-10-27 | Osram Oled Gmbh | Encapsulation structure for an opto-electronic component |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2001060A3 (de) * | 2007-06-08 | 2013-03-06 | OSRAM Opto Semiconductors GmbH | Optoelektronisches Bauelement |
| DE102008030751A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| CN101694868B (zh) * | 2009-09-29 | 2013-05-08 | 深圳丹邦投资集团有限公司 | 有机发光器件及其光抽取结构的制作方法 |
| JP5258817B2 (ja) * | 2010-03-02 | 2013-08-07 | 株式会社東芝 | 照明装置及びその製造方法 |
| FR2964254B1 (fr) * | 2010-08-30 | 2013-06-14 | Saint Gobain | Support de dispositif a diode electroluminescente organique, un tel dispositif a diode electroluminescente organique et son procede de fabrication |
| JP2012069277A (ja) * | 2010-09-21 | 2012-04-05 | Canon Inc | 発光素子及びそれを用いた画像表示装置 |
| WO2013030772A1 (en) * | 2011-08-31 | 2013-03-07 | Koninklijke Philips Electronics N.V. | Outcoupling device and light source |
| WO2013035299A1 (ja) * | 2011-09-07 | 2013-03-14 | パナソニック株式会社 | 発光装置および光シート |
| JP5919821B2 (ja) * | 2011-12-28 | 2016-05-18 | 大日本印刷株式会社 | 光学基板及びその製造方法並びに発光表示装置 |
| US9419249B2 (en) | 2012-04-13 | 2016-08-16 | Asahi Kasei E-Materials Corporation | Light extraction product for semiconductor light emitting device and light emitting device |
| KR20150141955A (ko) * | 2013-04-12 | 2015-12-21 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | 발광 장치 |
| JP6471907B2 (ja) * | 2013-05-21 | 2019-02-20 | パナソニックIpマネジメント株式会社 | 発光装置 |
| WO2014196053A1 (ja) * | 2013-06-06 | 2014-12-11 | パイオニア株式会社 | 光散乱フィルム、発光素子、光散乱フィルムの製造方法および発光素子の製造方法 |
| JP6255235B2 (ja) * | 2013-12-20 | 2017-12-27 | 株式会社ディスコ | 発光チップ |
| CN104091898B (zh) * | 2014-07-30 | 2018-06-01 | 上海天马有机发光显示技术有限公司 | 有机发光显示面板及其制造方法 |
| CN104638078B (zh) * | 2015-03-05 | 2017-05-10 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| CN105870288B (zh) * | 2016-04-27 | 2018-08-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
| CN107195245B (zh) * | 2017-05-22 | 2020-07-14 | 茆胜 | 微型显示器与光锥耦合结构及其制造方法 |
| EP3407400B1 (de) * | 2017-05-24 | 2023-07-05 | odelo GmbH | Verfahren zur behandlung von oberflächen von als lichtquellen in fahrzeugleuchten vorgesehenen oleds und leuchtmittel mit mindestens einer entsprechend behandelten oled als lichtquelle |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| AU4139101A (en) * | 1999-12-03 | 2001-06-12 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
| EP1330844A1 (en) * | 2000-11-02 | 2003-07-30 | 3M Innovative Properties Company | Brightness and contrast enhancement of direct view emissive displays |
| JP4378891B2 (ja) * | 2001-03-15 | 2009-12-09 | パナソニック電工株式会社 | アクティブマトリクス型発光素子及びその製法 |
| KR100789142B1 (ko) * | 2002-01-18 | 2007-12-28 | 삼성전자주식회사 | 도광판, 이를 이용한 박형 액정표시장치 및 이를 이용한시트 리스 액정표시장치 |
| US6710926B2 (en) * | 2002-04-10 | 2004-03-23 | The Regents Of The University Of California | Cylindrical microlens with an internally reflecting surface and a method of fabrication |
| JP2004247077A (ja) * | 2003-02-12 | 2004-09-02 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| US20040217702A1 (en) * | 2003-05-02 | 2004-11-04 | Garner Sean M. | Light extraction designs for organic light emitting diodes |
| JP2005063926A (ja) * | 2003-06-27 | 2005-03-10 | Toyota Industries Corp | 発光デバイス |
| JP2005063838A (ja) * | 2003-08-13 | 2005-03-10 | Toshiba Matsushita Display Technology Co Ltd | 光学デバイス及び有機el表示装置 |
| US6997595B2 (en) * | 2003-08-18 | 2006-02-14 | Eastman Kodak Company | Brightness enhancement article having trapezoidal prism surface |
| US7385226B2 (en) * | 2004-03-24 | 2008-06-10 | Epistar Corporation | Light-emitting device |
-
2006
- 2006-05-03 EP EP06744859A patent/EP1883977A1/en not_active Withdrawn
- 2006-05-03 CN CNA2006800162832A patent/CN101176214A/zh active Pending
- 2006-05-03 KR KR1020077028947A patent/KR20080010458A/ko not_active Ceased
- 2006-05-03 WO PCT/IB2006/051385 patent/WO2006120610A1/en not_active Ceased
- 2006-05-03 US US11/913,876 patent/US20080197764A1/en not_active Abandoned
- 2006-05-03 JP JP2008510691A patent/JP2008541368A/ja active Pending
- 2006-05-09 TW TW095116436A patent/TW200713640A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9172057B2 (en) | 2011-06-30 | 2015-10-27 | Osram Oled Gmbh | Encapsulation structure for an opto-electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006120610A1 (en) | 2006-11-16 |
| US20080197764A1 (en) | 2008-08-21 |
| JP2008541368A (ja) | 2008-11-20 |
| EP1883977A1 (en) | 2008-02-06 |
| TW200713640A (en) | 2007-04-01 |
| CN101176214A (zh) | 2008-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20071211 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20110503 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20120727 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20121031 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20120727 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |