KR20070089883A - 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 - Google Patents

펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 Download PDF

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Publication number
KR20070089883A
KR20070089883A KR1020077017552A KR20077017552A KR20070089883A KR 20070089883 A KR20070089883 A KR 20070089883A KR 1020077017552 A KR1020077017552 A KR 1020077017552A KR 20077017552 A KR20077017552 A KR 20077017552A KR 20070089883 A KR20070089883 A KR 20070089883A
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KR
South Korea
Prior art keywords
plasma
duty cycle
gate
insulating layer
limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020077017552A
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English (en)
Korean (ko)
Inventor
타이 쳉 추아
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Filing date
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20070089883A publication Critical patent/KR20070089883A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR1020077017552A 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 Abandoned KR20070089883A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/050,472 2005-02-02
US11/050,472 US7214628B2 (en) 2005-02-02 2005-02-02 Plasma gate oxidation process using pulsed RF source power

Publications (1)

Publication Number Publication Date
KR20070089883A true KR20070089883A (ko) 2007-09-03

Family

ID=36757158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017552A Abandoned KR20070089883A (ko) 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스

Country Status (5)

Country Link
US (1) US7214628B2 (enExample)
EP (1) EP1851788A4 (enExample)
JP (1) JP5172353B2 (enExample)
KR (1) KR20070089883A (enExample)
WO (1) WO2006083858A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR101341534B1 (ko) * 2011-07-27 2013-12-13 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 방법 및 플라즈마 처리 장치

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US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
DE102008036766B4 (de) 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
JP6254098B2 (ja) 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

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US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5531834A (en) 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
WO1999004911A1 (en) * 1997-07-28 1999-02-04 Massachusetts Institute Of Technology Pyrolytic chemical vapor deposition of silicone films
JP3141827B2 (ja) * 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6187682B1 (en) * 1998-05-26 2001-02-13 Motorola Inc. Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US6777037B2 (en) 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4001498B2 (ja) * 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
KR101044366B1 (ko) * 2002-06-12 2011-06-29 어플라이드 머티어리얼스, 인코포레이티드 기판을 처리하기 위한 플라즈마 방법 및 장치
US20040137243A1 (en) * 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
US6689646B1 (en) * 2002-11-14 2004-02-10 Sharp Laboratories Of America, Inc. Plasma method for fabricating oxide thin films

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341534B1 (ko) * 2011-07-27 2013-12-13 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 방법 및 플라즈마 처리 장치
US8828254B2 (en) 2011-07-27 2014-09-09 Hitachi High-Technologies Corporation Plasma processing method
TWI500066B (zh) * 2011-07-27 2015-09-11 Hitachi High Tech Corp Plasma processing device
US9349603B2 (en) 2011-07-27 2016-05-24 Hitachi High-Technologies Corporation Plasma processing method
US10600619B2 (en) 2011-07-27 2020-03-24 Hitachi High-Technologies Corporation Plasma processing apparatus
US11658011B2 (en) 2011-07-27 2023-05-23 Hitachi High-Tech Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
JP2008530783A (ja) 2008-08-07
WO2006083858A3 (en) 2007-02-01
JP5172353B2 (ja) 2013-03-27
US20060172551A1 (en) 2006-08-03
US7214628B2 (en) 2007-05-08
WO2006083858A2 (en) 2006-08-10
EP1851788A2 (en) 2007-11-07
EP1851788A4 (en) 2009-06-17

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Patent event date: 20070730

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Patent event date: 20081229

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

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Patent event date: 20090622

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