JP2008530783A5 - - Google Patents

Download PDF

Info

Publication number
JP2008530783A5
JP2008530783A5 JP2007554165A JP2007554165A JP2008530783A5 JP 2008530783 A5 JP2008530783 A5 JP 2008530783A5 JP 2007554165 A JP2007554165 A JP 2007554165A JP 2007554165 A JP2007554165 A JP 2007554165A JP 2008530783 A5 JP2008530783 A5 JP 2008530783A5
Authority
JP
Japan
Prior art keywords
plasma
limiting
oxide
time
duty cycle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007554165A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008530783A (ja
JP5172353B2 (ja
Filing date
Publication date
Priority claimed from US11/050,472 external-priority patent/US7214628B2/en
Application filed filed Critical
Publication of JP2008530783A publication Critical patent/JP2008530783A/ja
Publication of JP2008530783A5 publication Critical patent/JP2008530783A5/ja
Application granted granted Critical
Publication of JP5172353B2 publication Critical patent/JP5172353B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007554165A 2005-02-02 2006-01-30 パルス化高周波源電力を使用するプラズマゲート酸化プロセス Expired - Fee Related JP5172353B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/050,472 2005-02-02
US11/050,472 US7214628B2 (en) 2005-02-02 2005-02-02 Plasma gate oxidation process using pulsed RF source power
PCT/US2006/003388 WO2006083858A2 (en) 2005-02-02 2006-01-30 Plasma gate oxidation process using pulsed rf source power

Publications (3)

Publication Number Publication Date
JP2008530783A JP2008530783A (ja) 2008-08-07
JP2008530783A5 true JP2008530783A5 (enExample) 2012-09-13
JP5172353B2 JP5172353B2 (ja) 2013-03-27

Family

ID=36757158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007554165A Expired - Fee Related JP5172353B2 (ja) 2005-02-02 2006-01-30 パルス化高周波源電力を使用するプラズマゲート酸化プロセス

Country Status (5)

Country Link
US (1) US7214628B2 (enExample)
EP (1) EP1851788A4 (enExample)
JP (1) JP5172353B2 (enExample)
KR (1) KR20070089883A (enExample)
WO (1) WO2006083858A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
DE102008036766B4 (de) 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
WO2012112187A1 (en) * 2011-02-15 2012-08-23 Applied Materials, Inc. Method and apparatus for multizone plasma generation
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
TWI500066B (zh) * 2011-07-27 2015-09-11 Hitachi High Tech Corp Plasma processing device
JP6254098B2 (ja) 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5531834A (en) 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
WO1999004911A1 (en) * 1997-07-28 1999-02-04 Massachusetts Institute Of Technology Pyrolytic chemical vapor deposition of silicone films
JP3141827B2 (ja) * 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6187682B1 (en) * 1998-05-26 2001-02-13 Motorola Inc. Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6566272B2 (en) * 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US6777037B2 (en) 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4001498B2 (ja) * 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
KR101044366B1 (ko) * 2002-06-12 2011-06-29 어플라이드 머티어리얼스, 인코포레이티드 기판을 처리하기 위한 플라즈마 방법 및 장치
US20040137243A1 (en) * 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
US6689646B1 (en) * 2002-11-14 2004-02-10 Sharp Laboratories Of America, Inc. Plasma method for fabricating oxide thin films

Similar Documents

Publication Publication Date Title
KR102723608B1 (ko) 실리콘 산화물막에 대한 증착후 처리 방법
JP2008529314A5 (enExample)
JP2008530783A5 (enExample)
JP6689674B2 (ja) エッチング方法
TWI553734B (zh) 用於半導體元件之低溫氧化的方法
JP2021132220A (ja) 高アスペクト比の構造体のための除去方法
TWI445056B (zh) Method for forming silicon nitride film, manufacturing method of semiconductor device, and plasma chemical vapor deposition apparatus
JP5172352B2 (ja) パルス化高周波源電力を使用する選択プラズマ再酸化プロセス
WO2011108663A1 (ja) プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
CN107078050A (zh) 蚀刻方法
JP5172353B2 (ja) パルス化高周波源電力を使用するプラズマゲート酸化プロセス
JPWO2005076336A1 (ja) 半導体装置の製造方法および絶縁膜のエッチング方法
KR102832041B1 (ko) 산화물 박막의 제조 방법
KR20160088816A (ko) 에칭 방법
JP6504827B2 (ja) エッチング方法
US8420545B2 (en) Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
KR20010075177A (ko) 집적 회로 게이트 전도체 위에 형성된 스페이서를식각하기 위한 디바이스 및 방법
JP6017170B2 (ja) 堆積物除去方法及びガス処理装置
KR102822814B1 (ko) 기판 처리 장치를 이용한 기판 처리 방법
TWI855094B (zh) 蝕刻處理方法及基板處理裝置
CN112366135A (zh) 一种硅原子层刻蚀方法
JP2006286662A (ja) シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
KR100735523B1 (ko) 반도체 소자 제조 방법
JP3326864B2 (ja) ドライエッチング方法
JP2005086080A (ja) 半導体装置の製造方法