KR20070086618A - Photosensitive composition and process for production of printed wiring boards with the same - Google Patents

Photosensitive composition and process for production of printed wiring boards with the same Download PDF

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KR20070086618A
KR20070086618A KR1020077014404A KR20077014404A KR20070086618A KR 20070086618 A KR20070086618 A KR 20070086618A KR 1020077014404 A KR1020077014404 A KR 1020077014404A KR 20077014404 A KR20077014404 A KR 20077014404A KR 20070086618 A KR20070086618 A KR 20070086618A
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ethylenically unsaturated
photosensitive
parts
resin composition
weight
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KR1020077014404A
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KR100903465B1 (en
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히데노부 모리모토
시게오 마키노
키요미 야스다
슈지 타하라
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미쓰이 가가쿠 가부시키가이샤
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

A photosensitive resin composition characterized by containing at least one resin which has photopolymerizable ethylenically unsaturated groups on the side chains and a photosensitive compound which has three or more ethylenically unsaturated groups and exhibits a viscosity of 2000mPa s or above at 25°C under one atm; and a process for the production of wiring boards with the same.

Description

감광성 조성물 및 그것을 사용한 프린트 배선 기판의 제조 방법 {PHOTOSENSITIVE COMPOSITION AND PROCESS FOR PRODUCTION OF PRINTED WIRING BOARDS WITH THE SAME}The photosensitive composition and the manufacturing method of the printed wiring board using the same {PHOTOSENSITIVE COMPOSITION AND PROCESS FOR PRODUCTION OF PRINTED WIRING BOARDS WITH THE SAME}

본 발명은 감광성 수지 조성물 및 그것을 사용한 프린트 배선 기판의 제조 방법에 관한 것이다.This invention relates to the photosensitive resin composition and the manufacturing method of the printed wiring board using the same.

미세하고 고밀도의 도체 패턴을 갖는 프린트 배선판을 간편하고 신뢰성 높게 제조하기 위해서, 해상성 등의 성능이 본질적으로 우수한 감광성 레지스트액을 절연 기판 표면의 금속 도체층에 직접 도포하여 에칭 레지스트층을 형성하고, 이 에칭 레지스트층을 소정의 레지스트 패턴으로 형성하는 디핑법이 널리 알려져 있다. 본 방법은 간편하고, 또한 형성되는 에칭 레지스트층에 핀홀이 발생하지 않기 때문에, 수㎛ ~ 20㎛의 비교적 얇은 막두께를 필요로 하는 경우에는 유효한 방법이다.In order to manufacture a printed wiring board having a fine and dense conductor pattern simply and reliably, a photosensitive resist liquid which is essentially excellent in performance such as resolution is applied directly to the metal conductor layer on the surface of the insulating substrate to form an etching resist layer. The dipping method for forming this etching resist layer into a predetermined resist pattern is widely known. This method is simple and is effective when a relatively thin film thickness of several micrometers to 20 micrometers is required because pinholes do not occur in the etching resist layer formed.

그러나, 지금까지 사용되어 온 감광성 레지스트액에 의해 형성된 에칭 레지스트층, 특히 3개 이상의 에틸렌성 불포화기를 갖고, 점도가 25℃, 1 기압하에서 2000mPa·s 이상인 감광성 화합물을 사용한 경우, 에칭 레지스트층 끼리의 붙음은 없어지지만, 노광 감도가 낮아, 다량의 광량을 필요로 했다. 다량의 광량을 필요 로 하면 노광 시간이 길어져, 생산성이 나빠져서 실용화가 어려운 문제가 있었다.However, the etching resist layer formed by the photosensitive resist liquid used so far, especially when 3 or more ethylenically unsaturated groups are used and the photosensitive compound whose viscosity is 2000 mPa * s or more under 25 degreeC and 1 atmosphere is used, The adhesion disappeared, but the exposure sensitivity was low, and a large amount of light was required. If a large amount of light is required, the exposure time is long, productivity is poor, and there is a problem that it is difficult to be practically used.

발명의 개시Disclosure of the Invention

본 발명의 목적은, 상기 문제를 감안하여, 에칭 레지스트층끼리의 붙음이 없고, 노광 감도가 양호한 에칭 레지스트층을 형성하는 재료를 제공하는 것에 있다.In view of the above problems, an object of the present invention is to provide a material for forming an etching resist layer having excellent exposure sensitivity without sticking of etching resist layers.

본 발명자들은 예의 검토한 결과, 본 발명에 이르렀다. MEANS TO SOLVE THE PROBLEM The present inventors came to this invention as a result of earnestly examining.

즉,In other words,

제1의 발명은, 분자 중에 광중합가능한 에틸렌성 불포화기를 측쇄에 갖는 수지를 적어도 1 종류와 3개 이상의 에틸렌성 불포화기를 갖고, 점도가 25℃, 1 기압하에서 2000mPa·s 이상인 감광성 화합물을 함유하는 것을 특징으로 하는 감광성 수지 조성물이다.The first invention has a resin having at least one kind and three or more ethylenically unsaturated groups having a resin having a photopolymerizable ethylenically unsaturated group in a side chain thereof, and containing a photosensitive compound having a viscosity of at least 2000 mPa · s at 25 ° C. and 1 atmosphere. It is a photosensitive resin composition characterized by the above-mentioned.

상기 감광성 수지 조성물에 함유되는 분자 중에 광중합가능한 에틸렌성 불포화기를 측쇄에 갖는 수지의 에틸렌성 불포화기 당량은 100 ~ 1000g/eq인 것이 바람직한 태양이다.It is preferable that the ethylenically unsaturated group equivalent of resin which has a photopolymerizable ethylenically unsaturated group in a side chain in the molecule | numerator contained in the said photosensitive resin composition is 100-1000 g / eq.

또, 본 발명의 수지 조성물은, 알칼리 수용액에 용해가능한 수지로서, 중량평균분자량이 5000 ~ 20만이고 산가가 20mgKOH/g ~ 300mgKOH/g인 수지를 더 함유하는 것이 알칼리 현상성의 관점에서 바람직한 태양이다. Moreover, the resin composition of this invention is a resin which is soluble in aqueous alkali solution, Comprising: It is a preferable aspect from alkali developability viewpoint to further contain resin whose weight average molecular weight is 5000-200,000, and acid value is 20 mgKOH / g-300 mgKOH / g. .

또한, 상기 감광성 수지 조성물 중에 함유되는 용제는 30중량% ~ 95중량%인 것이 바람직한 태양이다.Moreover, it is a preferable aspect that the solvent contained in the said photosensitive resin composition is 30 to 95 weight%.

제2의 발명은, 절연 기판의 표면에 금속 도체층이 형성된 기판을 상기의 감광성 수지 조성물 중에 침지한 후, 끌어올림으로써 기판의 표면에 감광성 조성물을 도포하고, 포토마스크를 통하여, 노광, 현상하여, 레지스트 패턴의 에칭 레지스트층을 형성한 후, 기판에 에칭 처리를 실시함으로써 금속 도체층을 소정의 도체 패턴으로 형성하는 것을 특징으로 하는 프린트 배선 기판의 제조 방법이다.According to a second aspect of the present invention, after the substrate having a metal conductor layer formed on the surface of the insulating substrate is immersed in the photosensitive resin composition, the photosensitive composition is applied to the surface of the substrate by pulling it up, and then exposed and developed through a photomask. After forming the etching resist layer of a resist pattern, a metal conductor layer is formed in a predetermined conductor pattern by performing an etching process to a board | substrate, The manufacturing method of the printed wiring board characterized by the above-mentioned.

본 발명은 25℃, 1 기압하에서 점도가 2000mPa·s 이상인 감광성 화합물 분자와 광중합가능한 에틸렌성 불포화기를 측쇄에 갖는 수지를 적어도 1 종류 함유하는 것을 특징으로 하고, 택(tack)이 없는, 노광 감도 양호한 에칭 레지스트층을 형성할 수 있다.The present invention is characterized by containing at least one type of photosensitive compound molecule having a viscosity of 2000 mPa · s or more and a resin having an ethylenically unsaturated group capable of photopolymerization at a side chain at 25 ° C. and 1 atm, and having no tack. An etching resist layer can be formed.

발명을 실시하기 위한 최선의 형태Best Mode for Carrying Out the Invention

이하, 본 발명에 대해서 상세하게 설명한다.  EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.

본 발명의 감광성 수지 조성물은 분자 중에 광중합가능한 에틸렌성 불포화기를 측쇄에 갖는 수지와 3개 이상의 에틸렌성 불포화기를 갖고, 점도가 25℃, 1기압하에서 2000mPa·s 이상인 감광성 화합물을 함유하여 이루어지는 감광성 수지 조성물이다. 바람직하게는, 알칼리 수용액에 용해가능한 수지와 광중합 개시제 및 용제를 더 함유하여 이루어지는 감광성 수지 조성물이다.The photosensitive resin composition of this invention has resin which has a photopolymerizable ethylenically unsaturated group in a side chain, and 3 or more ethylenically unsaturated groups in a molecule | numerator, and contains the photosensitive compound whose viscosity is 2000 mPa * s or more at 25 degreeC and 1 atmosphere. to be. Preferably, it is the photosensitive resin composition which further contains resin which can melt | dissolve in aqueous alkali solution, a photoinitiator, and a solvent.

알칼리 수용액에 용해가능한 수지로서, 스티렌 무수말레산 수지 등의 무수 말레산 공중합체, 혹은, (메타)아크릴산메틸, (메타)아크릴산에틸, (메타)아크릴산 프로필 등의 에틸렌성 불포화기를 갖는 에스테르 화합물과 (메타)아크릴산 등의 카복실기를 갖는 에틸렌성 불포화 단량체와의 공중합물, 스티렌 등의 카복실기를 갖 지 않는 에틸렌성 불포화 단량체와 (메타)아크릴산메틸, (메타)아크릴산에틸, (메타)아크릴산프로필 등의 에틸렌성 불포화기를 갖는 에스테르 화합물과 (메타)아크릴산 등의 카복실기를 갖는 에틸렌성 불포화 단량체와의 공중합물 등을 들 수 있다. 이들 공중합 수지는 단독 혹은 혼합하여 사용할 수 있다.As a resin soluble in aqueous alkali solution, maleic anhydride copolymers, such as styrene maleic anhydride resin, or ester compounds which have ethylenically unsaturated groups, such as methyl (meth) acrylate, ethyl (meth) acrylate, and propyl (meth) acrylic acid; Copolymers with ethylenically unsaturated monomers having carboxyl groups such as (meth) acrylic acid, ethylenically unsaturated monomers without carboxyl groups such as styrene, methyl (meth) acrylate, ethyl (meth) acrylate, and (meth) acrylate And a copolymer of an ester compound having an ethylenically unsaturated group with an ethylenically unsaturated monomer having a carboxyl group such as (meth) acrylic acid. These copolymer resins can be used individually or in mixture.

알칼리 수용액에 용해가능한 수지의 중량평균분자량은 통상 5000 ~ 20만이 적당하고, 바람직하게는 1만 ~ 10만이다. 중량평균분자량이 5000 미만의 경우, 현상액으로 되는 탄산나트륨 수용액이나 메타규산나트륨 수용액 등의 약알칼리 수용액의 내현상액성이 떨어지고, 현상액에 의한 노광부의 용해도 진행되기 때문에 필요 이상으로 라인(회로)이 가늘어지고, 경우에 따라서는, 노광부, 미노광부의 구별 없이 현상액에 의해 용해 박리되어, 레지스트 패턴의 묘화가 곤란해지는 경우가 있다. 한편, 중량평균분자량이 20만을 넘으면 현상액으로 되는 약알칼리 수용액에서는 미노광부의 용해가 곤란해져 현상을 할 수 없는 경우가 있다. 또한 중량평균분자량이 20만을 넘으면 에칭 후의 수산화나트륨 수용액 등의 강알칼리 수용액으로 노광부의 레지스트를 박리하는 공정에서, 레지스트막의 박리가 극단적으로 늦어져, 종래의 통상 사용되고 있는 박리 라인을 사용할 수 없게 되는 경우가 있다.The weight average molecular weight of the resin which is soluble in the aqueous alkali solution is usually 5000 to 200,000, preferably 10,000 to 100,000. When the weight average molecular weight is less than 5000, the developing solution resistance of the weak alkaline aqueous solution such as the aqueous sodium carbonate solution or the aqueous sodium metasilicate solution, such as the developing solution is poor, and the solubility of the exposed portion by the developing solution is also advanced. In some cases, dissolution and peeling are performed by a developing solution without distinction between the exposed portion and the unexposed portion, and drawing of the resist pattern may be difficult. On the other hand, when the weight average molecular weight exceeds 200,000, in the weak alkaline aqueous solution which becomes a developing solution, dissolution of an unexposed part may become difficult and image development may not be possible. When the weight average molecular weight is more than 200,000, the resist film is extremely slow in the step of peeling the resist from the exposed portion with a strong alkaline aqueous solution such as an aqueous sodium hydroxide solution after etching, and thus a conventionally used peeling line cannot be used. have.

또한, 이들 알칼리 수용액에 용해가능한 수지의 산가는 통상, 20 ~ 300mgKOH/g가 적당하고, 바람직하게는 50 ~ 200mgKOH/g이다. 산가가 20mgKOH/g에 못 미치는 경우는, 현상액으로 되는 탄산나트륨 수용액이나 메타규산나트륨 수용액 등의 약알칼리 수용액에서는 미노광부의 용해가 곤란해져 현상을 할 수 없는 경우가 있다. 또, 박리 공정에서, 레지스트막의 박리가 극단적으로 늦어지는 경우가 있 다. 한편, 산가가 300mgKOH/g를 넘으면, 상기의 중량평균분자량이 낮은 경우와 마찬가지로, 약알칼리 수용액의 내현상액성이 떨어지고, 현상액에 의한 노광부의 용해도 진행되기 때문에 필요이상으로 라인(회로)이 가늘어지고, 경우에 따라서는, 노광부, 미노광부의 구별 없이 현상액에 의해 용해 박리되어, 레지스트 패턴의 묘화가 곤란해지는 경우가 있다. 산가의 측정은, 단위 중량의 시료를, 예를 들면 0.1N의 KOH 무수 메탄올로 적정하고, 페놀프탈레인 등의 지시약을 사용하여 측정할 수 있다.In addition, the acid value of the resin soluble in these aqueous alkali solutions is usually suitably 20 to 300 mgKOH / g, and preferably 50 to 200 mgKOH / g. When the acid value is less than 20 mgKOH / g, dissolution of the unexposed portion may be difficult in developing a weak alkaline aqueous solution such as an aqueous sodium carbonate solution or an aqueous sodium metasilicate solution. In addition, in the peeling step, peeling of the resist film may be extremely late. On the other hand, when the acid value is more than 300 mgKOH / g, as in the case where the weight average molecular weight is low, the developing solution resistance of the weak alkaline aqueous solution is inferior, and the solubility of the exposed portion by the developing solution is also advanced. In some cases, dissolution and peeling are performed by a developing solution without distinction between the exposed portion and the unexposed portion, and drawing of the resist pattern may be difficult. The acid value can be measured by titrating a sample having a unit weight with 0.1 N KOH anhydrous methanol, for example, using an indicator such as phenolphthalein.

분자 중에 광중합가능한 에틸렌성 불포화기를 갖지 않는 알칼리 수용액에 가용 가능한 수지는, 조성물의 고체 성분 중 10 ~ 80중량% 함유하는 것이 바람직하고, 더 바람직하게는 20 ~ 60중량%이다.It is preferable to contain 10-80 weight% of resin soluble in the aqueous alkali solution which does not have a photopolymerizable ethylenically unsaturated group in a molecule, More preferably, it is 20-60 weight%.

에틸렌성 불포화기를 측쇄에 갖는 수지로서 비스페놀A형 에폭시 수지, 비스페놀F형 에폭시 수지, 페놀노볼락형 에폭시 수지 또는 크레졸 노볼락형 에폭시 수지 등의 에폭시 수지에 (메타)아크릴산 등의 에틸렌성 불포화 모노카본산 및 불포화 다염기산 무수물을 부가하여 이루어지는 수지, 스티렌 무수말레산 수지 등의 무수 말레산 공중합체에 하이드록시에틸(메타)아크릴레이트 혹은 글리시딜(메타)아크릴레이트를 부가한 수지 등을 들 수 있다. 혹은, (메타)아크릴산메틸, (메타)아크릴산에틸, (메타)아크릴산프로필 등의 에틸렌성 불포화기를 갖는 에스테르 화합물과 (메타)아크릴산 등의 카복실기를 갖는 에틸렌성 불포화 단량체의 공중합체에 하이드록실기를 갖는 하이드록시에틸(메타)아크릴레이트 등의 하이드록실기를 갖는 에틸렌성 불포화기를 갖는 화합물을 부가한 공중합물, (메타)아크릴산메틸, (메타) 아크릴산에틸, (메타)아크릴산프로필 등의 에틸렌성 불포화기를 갖는 에스테르 화합물과 글리시딜아크릴레이트와의 공중합 수지에 하이드록시에틸 (메타)아크릴레이트 혹은 카복실기를 갖는 화합물을 부가한 에틸렌성 불포화기를 갖는 공중합물, 혹은 (메타)아크릴산 등의 카복실기를 갖는 에틸렌성 불포화 단량체와 (메타)아크릴산메틸, (메타)아크릴산에틸, (메타)아크릴산프로필 등의 에틸렌성 불포화기를 갖는 에스테르 화합물과 글리시딜아크릴레이트와의 공중합 수지에 하이드록시에틸 (메타)아크릴레이트 혹은 카복실기를 갖는 화합물을 부가한 에틸렌성 불포화기를 갖는 공중합물 등을 들 수 있다.As resin which has an ethylenically unsaturated group in a side chain, ethylenically unsaturated monocarbons, such as (meth) acrylic acid, in epoxy resins, such as a bisphenol-A epoxy resin, a bisphenol F-type epoxy resin, a phenol novolak-type epoxy resin, or a cresol novolak-type epoxy resin The resin which added acid and unsaturated polybasic anhydride, resin which added hydroxyethyl (meth) acrylate or glycidyl (meth) acrylate to maleic anhydride copolymer, such as styrene maleic anhydride resin, etc. are mentioned. . Alternatively, a hydroxyl group may be used in a copolymer of an ester compound having an ethylenically unsaturated group such as methyl (meth) acrylate, ethyl (meth) acrylate and propyl (meth) acrylate and an ethylenically unsaturated monomer having a carboxyl group such as (meth) acrylic acid. Copolymer which added the compound which has ethylenically unsaturated group which has hydroxyl groups, such as hydroxyethyl (meth) acrylate which has, ethylenic unsaturation, such as methyl (meth) acrylate, ethyl (meth) acrylate, and propyl (meth) acrylate Ethylene unsaturated group which added hydroxyethyl (meth) acrylate or the compound which has carboxyl group to the copolymer resin of ester compound which has group, and glycidyl acrylate, or ethylene which has carboxyl groups, such as (meth) acrylic acid A unsaturated unsaturated monomer, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, etc. The copolymer etc. which have the ethylenically unsaturated group which added hydroxyethyl (meth) acrylate or the compound which has a carboxyl group to the copolymerization resin of the ester compound which has an ethylenically unsaturated group and glycidyl acrylate are mentioned.

혹은, 카복실기를 갖는 공중합물에 대해, 글리시딜 (메타)아크릴레이트 등의 글리시딜기를 함유하는 에틸렌성 불포화 단량체를 부가하여 이루어지는 수지 등을 들 수 있다. 이들 수지 및 공중합물은 단독 혹은, 혼합하여 사용할 수 있다.Or the resin etc. which add the ethylenically unsaturated monomer containing glycidyl groups, such as glycidyl (meth) acrylate, with respect to the copolymer which has a carboxyl group are mentioned. These resins and copolymers can be used individually or in mixture.

에틸렌성 불포화기를 측쇄에 갖는 수지의 에틸렌성 불포화기 당량은 100 ~ 1000g/eq가 적당하다. 에틸렌성 불포화기 당량이 1000g/eq보다 크면 노광 감도가 향상되지 않는 경우가 있다. 보다 바람직하게는 200 ~ 700g/eq이다.As for the ethylenically unsaturated group equivalent of resin which has an ethylenically unsaturated group in a side chain, 100-1000 g / eq is suitable. When an ethylenically unsaturated group equivalent is larger than 1000 g / eq, exposure sensitivity may not improve. More preferably, it is 200-700 g / eq.

에틸렌성 불포화기 당량이 100 ~ 1000g/eq인 수지의 사용량은, 조성물의 고체 성분 중 5 ~ 60중량% 함유하는 것이 바람직하고, 더 바람직하게는 10 ~ 50중량% 이다.The amount of the resin having an ethylenically unsaturated group equivalent of 100 to 1000 g / eq is preferably 5 to 60% by weight in the solid component of the composition, more preferably 10 to 50% by weight.

또, 본 발명의 감광성 수지 조성물에 사용하는 감광성 화합물은, 노광에 의해 가교, 중합 혹은 2량화 등의 반응을 일으키고, 감광성 수지 조성물로부터 형성되는 감광성 수지 조성물의 건조 피막을 노광함으로써, 현상액에 대해서 불용인 것 으로 하여 에칭 레지스트층을 형성하는 성질을 갖는 것이다. 감광성 화합물의 주성분의 점도가 1기압, 25℃에서 2000mPa·s 미만일 때, 제작된 에칭 레지스트층 끼리를 겹쳐 하중을 걸면, 감광성 화합물이 도막 표면으로 이행하여, 에칭 레지스트층끼리의 붙음을 발생시키는 경우가 있다. 바람직하게는, 2000mPa·s 이상이고, 더욱 바람직하게는 4000mPa·s 이상이고, 고형이라도 좋다.Moreover, the photosensitive compound used for the photosensitive resin composition of this invention causes reaction, such as bridge | crosslinking, superposition | polymerization, or dimerization by exposure, and is insoluble with respect to a developing solution by exposing the dry film of the photosensitive resin composition formed from the photosensitive resin composition. It has a property of forming an etching resist layer as being. When the viscosity of the main component of the photosensitive compound is less than 2000 mPa · s at 1 atm and 25 ° C., when the produced etching resist layers are subjected to overlapping loads, the photosensitive compound migrates to the surface of the coating film and generates adhesion between the etching resist layers. There is. Preferably, it is 2000 mPa * s or more, More preferably, it is 4000 mPa * s or more, and solid may be sufficient.

3개 이상의 에틸렌성 불포화기를 갖는 바람직한 감광성 화합물로는, 트리알릴이소시아누레이트, 이소시아눌산 EO변성 트리아크릴레이트, 다관능 우레탄 애덕트체, 다관능 폴리에스테르 아크릴레이트, 펜타에리트리톨 테트라(메타)아크릴레이트, 디펜타에리스리톨 펜타(메타)아크릴레이트, 디펜타에리스리톨 헥사(메타)아크릴레이트 등을 들 수 있다.Preferred photosensitive compounds having three or more ethylenically unsaturated groups include triallyl isocyanurate, isocyanuric acid EO-modified triacrylate, polyfunctional urethane adducts, polyfunctional polyester acrylates, pentaerythritol tetra (meth ) Acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, etc. are mentioned.

에틸렌성 불포화기가 2개 이하인 감광성 화합물은 노광 감도를 저하시킬 우려가 있어 바람직하지 않다.The photosensitive compound which has two or less ethylenically unsaturated groups is unpreferable since there exists a possibility of reducing exposure sensitivity.

25℃, 1기압하에서 점도가 2000mPa·s 미만인 감광성 화합물을 사용하는 경우는 감광성 화합물의 사용 총량의 30중량% 이하, 바람직하게는 20중량% 이하로 하는 것이 바람직하다. 상기 에틸렌성 불포화기를 갖는 화합물로서 1개의 에틸렌성 불포화기를 갖는 불포화 화합물, 예를 들면 2-하이드록시에틸 (메타)아크릴레이트, 2-하이드록시프로필 (메타)아크릴레이트, 4-하이드록시부틸 (메타)아크릴레이트, N-비닐피롤리돈, (메타)아크릴로일 모르포린, 메톡시 테트라에틸렌글리콜 (메타)아크릴레이트, 메톡시 폴리에틸렌글리콜 (메타)아크릴레이트, N,N-디메틸 (메타)아크릴아미드, N-메틸올 (메타)아크릴아미드, N,N-디메틸아미노프로필 (메타)아크릴아 미드, N,N-디메틸아미노에틸 (메타)아크릴레이트, N,N-디메틸아미노프로필 (메타)아크릴레이트, 페녹시에틸 (메타)아크릴레이트, 시클로헥실 (메타)아크릴레이트, 이소보닐아크릴레이트 등을 들 수 있다. 또, 2개의 에틸렌성 불포화기를 갖는 불포화 화합물로는, 디에틸렌글리콜 디(메타)아크릴레이트, 트리에틸렌글리콜 디(메타)아크릴레이트, 트리프로필렌글리콜 디(메타)아크릴레이트, 트리메티롤프로판 디(메타)아크릴레이트, 비스페놀A의 EO부가물 디(메타)아크릴레이트 등을 들 수 있다. 3개의 에틸렌성 불포화기를 갖는 불포화 화합물로는, 트리메티롤프로판 트리(메타)아크릴레이트, 트리메티롤프로판 PO변성 트리(메타)아크릴레이트, 트리메티롤프로판 EO변성 트리(메타)아크릴레이트, 펜타에리스리톨 트리아크릴레이트 등을 들 수가 있고, 이들을 3개 이상의 에틸렌성 불포화기를 갖고, 점도가 25℃, 1 기압하에서 2000mPa·s 이상인 감광성 화합물과 조합하여 사용할 수 있다.When using the photosensitive compound whose viscosity is less than 2000 mPa * s at 25 degreeC and 1 atmosphere, it is preferable to set it as 30 weight% or less, Preferably it is 20 weight% or less of the total amount of the photosensitive compound used. As the compound having an ethylenically unsaturated group, an unsaturated compound having one ethylenically unsaturated group, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth ) Acrylate, N-vinylpyrrolidone, (meth) acryloyl morpholine, methoxy tetraethylene glycol (meth) acrylate, methoxy polyethylene glycol (meth) acrylate, N, N-dimethyl (meth) acrylic Amide, N-methylol (meth) acrylamide, N, N-dimethylaminopropyl (meth) acrylamide, N, N-dimethylaminoethyl (meth) acrylate, N, N-dimethylaminopropyl (meth) acryl Elate, phenoxyethyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl acrylate, etc. are mentioned. Moreover, as an unsaturated compound which has two ethylenically unsaturated groups, it is a diethylene glycol di (meth) acrylate, a triethylene glycol di (meth) acrylate, a tripropylene glycol di (meth) acrylate, and a trimetholpropane di ( Meth) acrylate, EO addition product di (meth) acrylate of bisphenol A, etc. are mentioned. As an unsaturated compound which has three ethylenically unsaturated groups, a trimethol propane tri (meth) acrylate, a trimethol propane PO modified tri (meth) acrylate, a trimethol propane EO modified tri (meth) acrylate, penta Erythritol triacrylate, etc. are mentioned, These can have a 3 or more ethylenically unsaturated group and can be used in combination with the photosensitive compound whose viscosity is 2000 mPa * s or more at 25 degreeC and 1 atmosphere.

본 발명의 감광성 수지 조성물에 대한 감광성 화합물의 비율은, 상기 조성물의 고형분 중의 5 ~ 60중량%, 보다 바람직하게는 7 ~ 50중량%의 고형분으로 하는 것이 바람직하다. 5중량%에 못 미친 경우는 노광에서의 경화가 불충분하게 되어, 현상시에 용해해 버리는 경향이 있다. 60중량%를 넘으면, 레지스트막을 중첩했을 때에 붙음을 일으키는 경우가 있다.It is preferable that the ratio of the photosensitive compound with respect to the photosensitive resin composition of this invention shall be 5 to 60 weight% in solid content of the said composition, More preferably, it is 7 to 50 weight% solid content. If it is less than 5% by weight, curing at exposure becomes insufficient, and tends to dissolve during development. When it exceeds 60 weight%, sticking may occur when a resist film is superimposed.

본 발명의 감광성 수지 조성물의 고형분 농도는, 70중량% 미만이 바람직하다. 70중량% 이상이면 감광성 레지스트액의 점도가 높아져, 균일한 에칭 레지스트층을 형성할 수 없게 되는 경우가 있고, 5중량%에 못 미친 경우는 노광으로 경화가 불충분하게 되어, 현상시에 용해해 버리는 경우가 있다. 바람직하게는 7 ~ 50중 량%이다.As for solid content concentration of the photosensitive resin composition of this invention, less than 70 weight% is preferable. If it is 70 weight% or more, the viscosity of the photosensitive resist liquid will become high, and it may become impossible to form a uniform etching resist layer, and when it is less than 5 weight%, hardening will become inadequate by exposure and will melt | dissolve at the time of image development. There is a case. Preferably it is 7-50 weight%.

본 발명에 사용하는 유기용제 성분으로서는, 예를 들면 메탄올, 에탄올, 프로필알코올, 이소프로필알코올, 2-부틸알코올, 헥산올, 에틸렌글리콜 등의 직쇄, 분기, 2급 혹은 다가의 알코올류, 및 아세톤, 메틸에틸케톤, 시클로헥사논, 이소포론 등의 케톤류, 및 톨루엔, 크실렌 등의 방향족 탄화수소류, 및 셀로솔브, 부틸셀로솔브 등의 셀로솔브류, 및 칼비톨, 부틸칼비톨 등의 칼비톨류 및 프로필렌글리콜 메틸에테르류 등의 프로필렌글리콜 알킬에테르류, 및 디프로필렌글리콜 메틸에테르 등의 폴리프로필렌글리콜 알킬에테르류, 및 초산에틸, 초산부틸, 셀로솔브 아세테이트, 부틸셀로솔브 아세테이트, 부틸칼비톨 아세테이트, 프로필렌글리콜 모노메틸에테르 아세테이트 등의 초산 에스테르류, 유산에틸, 유산부틸 등의 유산 에스테르류, 프로온산 에스테르류, 피르빈산 에스테르류, 에톡시프로피오네이트류 및 디알킬글리콜 에테르류 등, 및 n-헥산, 시클로헥산, 테트라하이드로퓨란 등을 들 수 있고, 이들을 복수종 조합하여 사용할 수가 있다.Examples of the organic solvent component used in the present invention include linear, branched, secondary or polyhydric alcohols such as methanol, ethanol, propyl alcohol, isopropyl alcohol, 2-butyl alcohol, hexanol, ethylene glycol, and acetone. , Ketones such as methyl ethyl ketone, cyclohexanone and isophorone, aromatic hydrocarbons such as toluene and xylene, cellosolves such as cellosolve and butyl cellosolve, and carbitols such as carbitol and butyl carbitol And propylene glycol alkyl ethers such as propylene glycol methyl ether, and polypropylene glycol alkyl ethers such as dipropylene glycol methyl ether, and ethyl acetate, butyl acetate, cellosolve acetate, butyl cellosolve acetate, and butyl carbitol acetate Acetic acid esters such as propylene glycol monomethyl ether acetate, lactic acid esters such as ethyl lactate and butyl lactate Tere, pyrvinic acid esters, ethoxypropionates, dialkylglycol ethers, and the like; n-hexane, cyclohexane, tetrahydrofuran, and the like.

광중합 개시제로서는, 자외선, 가시광선 등의 활성 광선의 조사에 의해 불포화 화합물의 중합을 개시시키는 개시제라면 어느 것도 사용 가능하다. 예를 들면, 벤조페논, 미힐러케톤 등의 벤조페논류, 벤조인, 벤조인이소부틸에테르 등의 벤조인알킬에테르류, 2,2-디메톡시-2-페닐아세토페논, 2,2-디에톡시아세토페논, 2,2-시클로-4-페녹시아세토페논 등의 아세토페논류, 2-하이드록시-2-메틸프로피오페논, 4-이소프로필-2-하이드록시-2-메틸프로피오페논 등의 프로필페논류, 2-에틸안트라퀴논, 2-t-부틸안트라퀴논 등의 안트라퀴논류, 디에틸티오크산톤, 디이소프로필티 오크산톤, 클로로티오크산톤 등의 티오크산톤류, 그 외 벤질, 1-하이드록시시클로헥실페닐케톤, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온, p-디메틸아미노벤조산 에틸에스테르, p-디메틸아미노 벤조산 이소아밀 등을 들 수 있다. 이들 광중합 개시제는, 단독 혹은 혼합하여 사용할 수가 있다. 본 발명의 감광성 수지 조성물에 대한 광중합 개시제의 비율은, 상기 조성물의 고형분 중의 0.2 ~ 20중량%가 바람직하고, 보다 바람직하게는 1 ~ 10중량%이다.As a photoinitiator, any initiator can be used as long as it initiates polymerization of an unsaturated compound by irradiation of active rays such as ultraviolet rays and visible rays. For example, benzophenones such as benzophenone and Michler's ketone, benzoin alkyl ethers such as benzoin and benzoin isobutyl ether, 2,2-dimethoxy-2-phenylacetophenone and 2,2-die Acetophenones such as oxyacetophenone and 2,2-cyclo-4-phenoxyacetophenone, 2-hydroxy-2-methylpropiophenone, 4-isopropyl-2-hydroxy-2-methylpropiophenone Anthraquinones such as propylphenones such as 2-ethyl anthraquinone and 2-t-butyl anthraquinone, thioxanthones such as diethyl thioxanthone, diisopropyl thiacanthone and chloro thioxanthone, and the like Other benzyl, 1-hydroxycyclohexylphenyl ketone, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one, p-dimethylaminobenzoic acid ethyl ester, p-dimethylamino benzoic acid iso Amyl etc. are mentioned. These photoinitiators can be used individually or in mixture. As for the ratio of the photoinitiator with respect to the photosensitive resin composition of this invention, 0.2-20 weight% in solid content of the said composition is preferable, More preferably, it is 1-10 weight%.

또, 본 발명의 감광성 수지 조성물에는 필요에 따라서 레벨링제, 소포제, 틱소트로픽제, 발색제, 염료, 안료, 무기 필러, 유기 필러 등을 더 첨가할 수 있다.Moreover, a leveling agent, an antifoamer, a thixotropic agent, a coloring agent, a dye, a pigment, an inorganic filler, an organic filler, etc. can be further added to the photosensitive resin composition of this invention as needed.

본 발명의 감광성 레지스트액을 디핑 방식에 의해 도포한 에칭 레지스트층은, 현상 공정 및 에칭 처리 공정에서, 반송시의 접촉 및 현상액이나 에칭액의 분사에 대한 강도를 충분히 유지하기 위해서, 기판의 평면부에서의 레지스트층의 두께는 3㎛ 이상인 것이 바람직하고, 5㎛ 이상에서 특히 강인하여 에칭 적성이 우수한 레지스트층으로 된다. 또, 특히 높은 해상성 및 에칭 정밀도를 달성하기 위해서는, 레지스트층의 두께는 기판의 평면부에서 30㎛ 이하가 바람직하고, 특히 20㎛ 이하가 바람직하다.The etching resist layer coated with the photosensitive resist liquid of the present invention by a dipping method is used at the planar portion of the substrate in order to sufficiently maintain the strength against contact during conveyance and injection of the developer or etching solution in the developing step and the etching treatment step. It is preferable that the thickness of the resist layer of is 3 micrometers or more, and it is especially strong at 5 micrometers or more, and it becomes a resist layer excellent in the etching ability. In addition, in order to achieve particularly high resolution and etching accuracy, the thickness of the resist layer is preferably 30 µm or less, particularly preferably 20 µm or less in the planar portion of the substrate.

본 발명의 감광성 수지 조성물은, 일반의 경질(리지드) 배선 기판 및 플렉서블 배선 기판, 금속 기판 등의 표면에 금속 도체층이 형성된 기판에, 롤법 또는 침지법에 의해 박막으로 균일한 감광성 레지스트막을 형성할 수 있다. 본 발명의 수지 조성물은, 특히 침지법에 의해 감광성 레지스트막을 형성하는데 매우 적합하다. 통상, 기판 도체 표면을 황산 등의 산에 의해 처리하거나 브러쉬 등을 사용하여 금 속 표면을 연마함으로써 표면을 청정하게 한 후, 기판의 도체층에 롤법 또는 침지법에 의해 본 발명의 감광성 수지 조성물을 도포하고, 다음에 용제를 건조하여 막두께가 3 ~ 20㎛, 바람직하게는 8 ~ 15㎛인 박막의 균일한 감광성 레지스트막을 형성한 후, 포토마스크를 통하여 소정의 회로 패턴을 자외선 또는 가시광선에 의해 노광하여 경화를 행하고, 0.5 ~ 3.0중량% 정도의 탄산나트륨 수용액 등의 약알칼리 수용액으로 미노광부를 용해 제거한다. 다음에 노출한 도체층을 에칭 처리에 의해 제거한 후, 남겨진 도체층의 표면의 경화된 감광성 레지스트막을 1.0 ~ 5.0중량% 정도의 수산화나트륨 수용액 등의 강알칼리 수용액으로 박리 제거함으로써 목적의 도체 회로를 얻을 수 있다.The photosensitive resin composition of this invention can form a uniform photosensitive resist film in a thin film by the roll method or the immersion method on the board | substrate with which the metal conductor layer was formed in the surface of a general hard (rigid) wiring board, a flexible wiring board, a metal board | substrate, etc. Can be. The resin composition of this invention is especially suitable for forming a photosensitive resist film by the immersion method. Usually, after treating the surface of the substrate conductor with an acid such as sulfuric acid or by polishing the metal surface with a brush or the like to clean the surface, the photosensitive resin composition of the present invention is applied to the conductor layer of the substrate by a roll method or an immersion method. After coating, the solvent is dried to form a uniform photosensitive resist film of a thin film having a thickness of 3 to 20 µm, preferably 8 to 15 µm, and then a predetermined circuit pattern is exposed to ultraviolet or visible light through a photomask. It exposes and hardens | cures and hardly removes an unexposed part with weak alkaline aqueous solution, such as about 0.5-3.0 weight% of sodium carbonate aqueous solution. Next, after removing the exposed conductor layer by etching, the target conductor circuit can be obtained by peeling off the cured photosensitive resist film on the surface of the remaining conductor layer with a strong alkaline aqueous solution such as about 1.0 to 5.0% by weight of sodium hydroxide solution. have.

본 발명의 감광성 수지 조성물을 사용하면 제작된 에칭 레지스트층 끼리의 붙음이 없고, 노광 감도가 양호하며, 노광부의 내현상액성, 내에칭액성, 박리성이 우수한 에칭 레지스트층을 형성할 수가 있다.When the photosensitive resin composition of this invention is used, the etching resist layer produced can be formed without sticking, exposure sensitivity is favorable, and the etching resist layer excellent in the developing solution resistance, etching resistance, and peelability of an exposure part can be formed.

[실시예]EXAMPLE

이하, 본 발명을 실시예에 의해 상술한다. 특별히 언급이 없는 한, 부는 중량부를 의미한다.Hereinafter, an Example demonstrates this invention. Unless stated otherwise, parts means parts by weight.

(측정 및 평가 방법)(Measurement and Evaluation Method)

수지 분자량:gPC에 의해 측정하여, 중량평균분자량을 구했다.Resin molecular weight: It measured by gPC and calculated | required the weight average molecular weight.

수지 산가: 시료 1g을 0.1N의 KOH 무수 메탄올로 적정하여 페놀프탈레인 등의 지시약을 사용하여 측정하고, KOH의 밀리그램수로 표시하였다.Resin acid value: 1g of samples was titrated with 0.1N of KOH anhydrous methanol, it measured using indicators, such as phenolphthalein, and it expressed by the number of milligrams of KOH.

용제량: 감광성 수지 조성물 용액중의 용제 함유량을중량%로 표시했다. Solvent amount: The solvent content in the photosensitive resin composition solution was displayed by weight%.

막두께: 와전류식 간이 막두께계(이소스코프 MP30; 피셔인스트루먼트 사제)를 사용하여 측정했다.Film thickness: It measured using the eddy current type simple film thickness meter (isoscope MP30; manufactured by Fisher Instruments).

현상성: 30℃, 1.0중량%의 탄산나트륨 수용액을 사용하여, 0.18Pa의 압력에서, 60초간 스프레이 현상을 행하고, 미노광부에 대해 다음의 판정을 행하였다.Developability: Spray development was carried out for 60 seconds at a pressure of 0.18 Pa using a 1.0% by weight aqueous solution of sodium carbonate at 30 ° C., and the following determination was performed on the unexposed part.

○ 잔사가 없는 경우, × 잔사가 있는 경우.○ When there is no residue, if there is × residue.

노광 감도: 포토레지스트 노광용 양면 동시 노광기 [HMW-532D]((주)오크세이사쿠쇼제)에 의해 적산 광량 100mJ의 자외선으로 노광하고, 그 후, 30℃의 1.0중량%의 탄산나트륨 수용액을 스프레이압 2kg/cm2로 60초간 분사했을 때의 스텝 단수(스토퍼 21단의 도막 잔존단수)를 확인했다.Exposure sensitivity: It exposes by ultraviolet-ray of accumulated light quantity 100mJ by double-sided simultaneous exposure machine [HMW-532D] (made by Oak Seisakusho Co., Ltd.) for photoresist exposure, and sprays 2 kg of 1.0 weight% sodium carbonate aqueous solution of 30 degreeC after that spray pressure The step number of stages (the number of stoppers of the coating film of 21 steps of stages) when spraying for 60 second at / cm <2> was confirmed.

감도 2단 이하를 ×, 3~4단을 ○, 5단 이상을 ◎으로 했다.Sensitivity 2 steps or less were made into (circle) and 3-4 steps | paragraphs (circle) and 5 or more steps | paragraphs were made into (circle).

택성: 도공 기판을 □ 10cm × 10cm로 절단하고, 도막면을 중첩하여 20g/cm2의 하중을 걸고 1일 방치하고, 붙음이 없었던 것을 ◎, 약간 붙음이 있던 것을 ○, 붙음이 많이 일어난 것을 ×로 했다.Tackiness: Cut the coated substrate into 10cm × 10cm, overlap the coating surface, and leave it under a load of 20g / cm 2 for 1 day, and there is no adhesion. I did it.

도공성: 감광성 레지스트액에 기판을 침지하고 끌어 올렸을 때에 도막 표면의 두께 편차가 없는 것을 ○, 편차가 있는 것을 ×로 했다.Coating property: When the board | substrate was immersed and pulled up in the photosensitive resist liquid, the thing with no deviation of the thickness of a coating film surface was made into (circle) and the thing with a deviation.

(수지 용액 A의 합성)(Synthesis of Resin Solution A)

메타크릴산 메틸 55.0부, 2-하이드록시에틸 아크릴레이트 10.0부, n-부틸아크릴레이트 18.1부, 메타크릴산 16.9부를 메틸에틸케톤 150.0부에 용해시키고, 중합 개시제를 사용하여 질소 분위기 중, 교반, 환류 조건하에서 중합을 행하여, 폴 리스티렌 환산 중량평균분자량 28000, 산가 110mgKOH/g, 고형분 농도 40.0중량%의 수지 용액 A를 얻었다.55.0 parts of methyl methacrylate, 10.0 parts of 2-hydroxyethyl acrylate, 18.1 parts of n-butyl acrylate, and 16.9 parts of methacrylic acid are dissolved in 150.0 parts of methyl ethyl ketone, stirring in a nitrogen atmosphere using a polymerization initiator, The polymerization was carried out under reflux conditions to obtain a resin solution A having a polystyrene equivalent weight average molecular weight of 28000, an acid value of 110 mgKOH / g, and a solid content concentration of 40.0% by weight.

(수지 용액 B의 합성)(Synthesis of Resin Solution B)

메타크릴산메틸 55.0부, 2-에틸헥실아크릴레이트 10.0부, 벤질메타크릴레이트 15.0부, 메타크릴산 20.0부를 메틸에틸케톤 150.0부에 용해시키고, 중합 개시제를 사용하여 질소 분위기 중, 교반, 환류 조건하에서 중합을 행하여, 폴리스티렌 환산 중량평균분자량 63000, 산가 130mgKOH/g, 고형분 농도 40.0중량%의 수지 용액 B를 얻었다. 55.0 parts of methyl methacrylate, 10.0 parts of 2-ethylhexyl acrylate, 15.0 parts of benzyl methacrylate, and 20.0 parts of methacrylic acid were dissolved in 150.0 parts of methyl ethyl ketone, and stirred and reflux conditions in a nitrogen atmosphere using a polymerization initiator. It superposed | polymerized under the obtained resin solution B of the polystyrene conversion weight average molecular weight 63000, the acid value 130 mgKOH / g, and solid content concentration 40.0 weight%.

(수지 용액 C의 합성)(Synthesis of Resin Solution C)

메타크릴산 메틸 58.0부, 2-에틸헥실 아크릴레이트 9.0부, 벤질 메타크릴레이트 10.0부, 메타크릴산 23.0부를 메틸에틸케톤 150.0부에 용해시키고, 중합 개시제를 사용하여 질소 분위기 중, 교반, 환류 조건하에서 중합을 행하여, 폴리스티렌 환산 중량평균분자량 107000, 산가 150mgKOH/g, 고형분 농도 40.0중량%의 수지 용액 C를 얻었다.58.0 parts of methyl methacrylate, 9.0 parts of 2-ethylhexyl acrylate, 10.0 parts of benzyl methacrylate, and 23.0 parts of methacrylic acid were dissolved in 150.0 parts of methyl ethyl ketone, and stirred and reflux conditions in a nitrogen atmosphere using a polymerization initiator. It superposed | polymerized under the obtained resin solution C of the weight average molecular weight 107000 of polystyrene conversion, 150 mgKOH / g of acid value, and 40.0 weight% of solid content concentration.

(감광성 레지스트 원액 E의 제조)(Production of Photosensitive Resist Stock E)

수지 용액 A 30.0부, 이소시아눌산 EO변성 트리아크릴레이트 3.0부(고체/25℃), 디펜타에리스리톨 헥사아크릴레이트 4.0부(점도; 4200mPa·s/25℃), 에틸렌성 불포화기를 측쇄에 갖는 수지(분자량: 15000, 불포화기 당량: 350g/eq, 고형분 60중량%) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 55.2중량%의 감광성 레지스트 원액 E를 제조하였다.Resin solution A 30.0 parts, isocyanuric acid EO modified triacrylate 3.0 parts (solid / 25 degreeC), dipentaerythritol hexaacrylate 4.0 parts (viscosity; 4200 mPa * s / 25 degreeC), resin which has an ethylenically unsaturated group in a side chain (Molecular weight: 15000, unsaturated group equivalent: 350 g / eq, solid content 60 wt%) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropan-1-one 1.5 parts, diethyl thi 0.5 part of oxaanthone and 0.1 part of UV-Blue 236 (made by Mitsui Chemicals) were mixed, and the photosensitive resist stock solution E of 55.2 weight% of solid content concentration was prepared.

(감광성 레지스트 원액 F의 제조)(Production of Photosensitive Resist Stock Solution F)

수지 용액 B 30.0부, 디펜타에리스리톨 헥사아크릴레이트 4.0부(점도; 4200mPa·s/25℃), 펜타에리스리톨 테트라아크릴레이트 3.0부(고체/25℃), 에틸렌성 불포화기를 측쇄에 갖는 화합물(분자량: 15000, 에틸렌성 불포화기 당량: 350 g/eq, 고형분 60중량%) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 55.2중량%의 감광성 레지스트 원액 F를 제조했다.Resin solution B 30.0 parts, dipentaerythritol hexaacrylate 4.0 parts (viscosity; 4200 mPa * s / 25 degreeC), pentaerythritol tetraacrylate 3.0 parts (solid / 25 degreeC), the compound which has an ethylenically unsaturated group in a side chain (molecular weight: 15000, ethylenically unsaturated group equivalent: 350 g / eq, solid content 60% by weight) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropan-1-one 1.5 parts, diethyl thi 0.5 part of oak-santh and 0.1 part of UV-Blue 236 (made by Mitsui Chemicals) were mixed, and the photosensitive resist stock solution F of 55.2 weight% of solid content concentration was manufactured.

(감광성 레지스트 원액g의 제조)(Preparation of photosensitive resist stock solution g)

수지 용액 C 30.0부, 디펜타에리스리톨 헥사아크릴레이트 3.0부(점도; 4200mPa·s/25℃), 펜타에리스리톨 테트라아크릴레이트 4.0부(고체/25℃), 에틸렌성 불포화기를 측쇄에 갖는 화합물(분자량: 15000, 에틸렌성 불포화기 당량: 450 g/eq, 고형분 60중량%) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 55.2중량%의 감광성 레지스트 원액 G를 제조했다.Resin solution C 30.0 parts, dipentaerythritol hexaacrylate 3.0 parts (viscosity; 4200 mPa * s / 25 degreeC), pentaerythritol tetraacrylate 4.0 parts (solid / 25 degreeC), the compound which has an ethylenically unsaturated group in a side chain (molecular weight: 15000, ethylenically unsaturated group equivalent: 450 g / eq, solid content 60% by weight) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropan-1-one 1.5 parts, diethyl thi 0.5 part of oxaanthone and 0.1 part of UV-Blue 236 (made by Mitsui Chemicals) were mixed, and the photosensitive resist stock solution G of 55.2 weight% of solid content concentration was manufactured.

(감광성 레지스트 원액 H의 제조)(Production of Photosensitive Resist Stock Solution H)

수지 용액 B 40.0부, 디펜타에리스리톨 헥사아크릴레이트 7.0부(점도; 4200mPa·s/25℃), 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5 부, UV-Blue 236(미츠이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 51.1중량%의 감광성 레지스트 원액 H를 제조했다.40.0 parts of resin solution B, 7.0 parts of dipentaerythritol hexaacrylate (viscosity; 4200 mPa · s / 25 ° C), 1.5 parts of 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropan-1-one And 0.5 parts of diethyl thioxanthone and 0.1 part of UV-Blue 236 (manufactured by Mitsui Chemical Co., Ltd.) were mixed to prepare a photosensitive resist stock solution H having a solid content concentration of 51.1 wt%.

(감광성 레지스트 원액 I의 제조)(Preparation of Photosensitive Resist Stock Solution I)

수지 용액 B 30.0부, 트리메티롤프로판 트리아크릴레이트 7.0부(점도; 65mPa·s/25℃), 에틸렌성 불포화기를 측쇄에 갖는 화합물(분자량: 15000, 에틸렌성 불포화기 당량: 350g/eq, 고형분 60중량%) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 55.2중량%의 감광성 레지스트 원액 I를 제조했다.Resin solution B 30.0 parts, trimetholpropane triacrylate 7.0 parts (viscosity; 65 mPa * s / 25 degreeC), the compound which has an ethylenically unsaturated group in a side chain (molecular weight: 15000, ethylenically unsaturated group equivalent: 350 g / eq, solid content) 60 parts by weight) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one 1.5 parts, diethyl thioxanthone 0.5 part, UV-Blue 236 (manufactured by Mitsui Chemical Co., Ltd.) ) 0.1 part was mixed to prepare a photosensitive resist stock solution I having a solid concentration of 55.2% by weight.

(감광성 레지스트 원액 Z의 제조)(Production of Photosensitive Resist Stock Solution Z)

수지 용액 A 30.0부, 디펜타에리스리톨 헥사아크릴레이트 2.0부(점도; 4200mPa·s/25℃), 펜타에리스리톨 테트라아크릴레이트 5.0부(고체/25℃), 에틸렌성 불포화기를 측쇄에 갖는 화합물(에틸렌성 불포화기 당량: 86g/eq) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 63.3중량%의 감광성 레지스트 원액 Z를 제조했다.Resin solution A 30.0 parts, dipentaerythritol hexaacrylate 2.0 parts (viscosity; 4200 mPa * s / 25 degreeC), pentaerythritol tetraacrylate 5.0 parts (solid / 25 degreeC), The compound which has an ethylenically unsaturated group in a side chain (ethylenic Unsaturated group equivalent: 86 g / eq) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one 1.5 parts, diethyl thioxanthone 0.5 part, UV-Blue 236 ( 0.1 part of Mitsui Chemicals Co., Ltd. product) was mixed, and the photosensitive resist stock solution Z of 63.3 weight% of solid content concentration was manufactured.

(감광성 레지스트 원액 AA의 제조)(Production of Photosensitive Resist Stock Solution AA)

수지 용액 B 30.0부, 디펜타에리스리톨 헥사아크릴레이트 5.0부(점도; 4200mPa·s/25℃), 펜타에리스리톨 테트라아크릴레이트 2.0부(고체/25℃), 에틸렌성 불포화기를 측쇄에 갖는 화합물(에틸렌성 불포화기 당량: 1260g/eq) 10부, 2-메틸-[4-(메틸티오)페닐]-2-몰포리노프로판-1-온 1.5부, 디에틸티오크산톤 0.5부, UV-Blue 236(미쓰이카가쿠 사제) 0.1부를 혼합하여 고형분 농도 55.2중량%의 감광성 레지스트 원액 AA를 제조했다.Resin solution B 30.0 parts, dipentaerythritol hexaacrylate 5.0 parts (viscosity; 4200 mPa * s / 25 degreeC), pentaerythritol tetraacrylate 2.0 parts (solid / 25 degreeC), the compound which has an ethylenically unsaturated group in a side chain (ethylenic Unsaturated group equivalent: 1260 g / eq) 10 parts, 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one 1.5 parts, diethyl thioxanthone 0.5 part, UV-Blue 236 ( 0.1 part of Mitsui Chemicals Co., Ltd.) was mixed, and the photosensitive resist stock solution AA of 55.2 weight% of solid content concentration was manufactured.

(실시예 1)(Example 1)

(감광성 레지스트액 K의 제조)(Production of Photosensitive Resist Liquid K)

감광성 레지스트 원액 E에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 K를 제조했다.35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred in the photosensitive resist stock solution E, and the photosensitive resist liquid K was prepared.

(실시예 2)(Example 2)

(감광성 레지스트액 L의 제조)(Production of Photosensitive Resist Liquid L)

감광성 레지스트 원액 E를 그대로 사용했다.Photosensitive resist stock solution E was used as it was.

(실시예 3)(Example 3)

(감광성 레지스트액 M의 제조)(Production of Photosensitive Resist Liquid M)

감광성 레지스트 원액 F에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 M을 제조했다. 35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred with the photosensitive resist stock solution F, and the photosensitive resist liquid M was produced.

(실시예 4)(Example 4)

(감광성 레지스트액 N의 제조)(Production of Photosensitive Resist Liquid N)

감광성 레지스트 원액 F를 그대로 사용했다.Photosensitive resist stock solution F was used as it was.

(실시예 5)(Example 5)

(감광성 레지스트액 O의 제조)(Production of Photosensitive Resist Liquid O)

감광성 레지스트 원액g에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 O를 제조했다. 35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred with the photosensitive resist stock solution g, and the photosensitive resist liquid O was prepared.

(실시예 6)(Example 6)

(감광성 레지스트액 P의 제조)(Production of Photosensitive Resist Liquid P)

감광성 레지스트 원액g를 그대로 사용했다.The photosensitive resist stock solution g was used as it was.

(비교예 1)(Comparative Example 1)

(감광성 레지스트액 Q의 제조)(Production of Photosensitive Resist Liquid Q)

감광성 레지스트 원액 H에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 Q를 제조했다.35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred in the photosensitive resist stock solution H, and the photosensitive resist liquid Q was prepared.

(비교예 2)(Comparative Example 2)

(감광성 레지스트액 R의 제조)(Production of Photosensitive Resist Liquid R)

감광성 레지스트 원액 I에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 R을 제조했다.35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred in the photosensitive resist stock solution I, and the photosensitive resist liquid R was produced.

(실시예 7)(Example 7)

(감광성 레지스트액 AE의 제조)(Production of Photosensitive Resist Liquid AE)

감광성 레지스트 원액 Z에 MEK를 46.2부와 프로필렌글리콜 모노메틸에테르 아세테이트를 19.8부 혼합, 교반하여 감광성 레지스트액 AE를 제조했다.46.2 parts of MEK and 19.8 parts of propylene glycol monomethyl ether acetate were mixed and stirred with the photosensitive resist stock solution Z, and the photosensitive resist liquid AE was produced.

(실시예 8)(Example 8)

(감광성 레지스트액 AF의 제조)(Production of Photosensitive Resist Liquid AF)

감광성 레지스트 원액 AA에 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 혼합, 교반하여 감광성 레지스트액 AF를 제조했다. 35.0 parts of MEK and 15.9 parts of propylene glycol monomethyl ether acetate were mixed and stirred in the photosensitive resist stock solution AA, and the photosensitive resist liquid AF was produced.

(비교예 3)(Comparative Example 3)

(감광성 레지스트액 AG의 제조)(Production of Photosensitive Resist Liquid AG)

감광성 레지스트 원액 F중의 이소시아눌산 EO 변성 트리아크릴레이트 3.0부 (고체/25℃) 대신에 폴리에틸렌글리콜 디아크릴레이트(50mPa·s/25℃) 3.0부를 첨가하고, 또한 MEK를 35.0부와 프로필렌글리콜 모노메틸에테르 아세테이트를 15.9부 더 혼합, 교반하여 감광성 레지스트액 AG를 제조하였다. Instead of 3.0 parts of isocyanuric acid EO-modified triacrylate (solid / 25 ° C.) in the photosensitive resist stock solution F, 3.0 parts of polyethylene glycol diacrylate (50 mPa · s / 25 ° C.) was added, and 35.0 parts of MEK and propylene glycol mono 15.9 parts of methyl ether acetate was further mixed and stirred to prepare a photosensitive resist liquid AG.

(프린트 배선 기판의 제조 방법)(Manufacturing method of a printed wiring board)

글래스에폭시 양면구리클래드적층판 (판두께 0.2mm, 구리두께 18㎛, 기판 사이즈 370mm × 260mm)의 프린트 기판을 준비했다.The printed board of the glass epoxy double-sided copper clad laminated board (plate thickness 0.2mm, copper thickness 18 micrometers, board | substrate size 370mm x 260mm) was prepared.

다음에 스텐레스제의 용기에 감광성 레지스트액 및 원액(G)을 저장하여, 침지배스를 제작했다. 그리고 상기와 같이 준비한 프린트 배선 기판을 액면에 대해서 수직으로 50cm/분의 속도로 침지하고, 기판의 상단 1cm가 액면보다 위로 나와 있는 상태에서 침지를 일단 정지한 후, 인상 속도 50cm/분으로 기판 전체를 액면으로부터 위로 끌어올려 감광성 레지스트액을 도포하고, 열풍식 건조기에서 80℃, 10분 건조시킨 후, 실온이 될 때까지 방냉했다.Next, the photosensitive resist liquid and stock solution (G) were stored in the stainless steel container, and the immersion bath was produced. Then, the printed wiring board prepared as described above is immersed at a speed of 50 cm / min perpendicular to the liquid level, and the immersion is stopped once with the upper end 1 cm of the substrate rising above the liquid level, and then the entire substrate at a pulling speed of 50 cm / min. The photosensitive resist liquid was applied up from the liquid surface, dried at 80 ° C. for 10 minutes in a hot air dryer, and then allowed to cool to room temperature.

도체 패턴을 형성할 수 있는 패턴을 그린 마스크 필름을 2매 사용하여, 각 마스크 필름의 배선 패턴의 방향이 서로 직교되도록 하여 기판의 양면에 마스크 필름을 대고, 포토레지스트 노광용 양면 동시 노광기 [HMW-532D]((주)오크세이사쿠쇼제)에 의해 적산 광량 100 ~ 500mJ의 자외선으로 노광하고, 그 후, 30℃의 1.0중량%의 탄산나트륨 수용액을 스프레이압 2 kg/cm2로 분사하여 현상하여 소정의 레지스트 패턴의 에칭 레지스트층을 형성했다.Using two mask films drawn with a pattern capable of forming a conductor pattern, the wiring patterns of the respective mask films are orthogonal to each other so that the mask films are placed on both sides of the substrate, and the double-sided simultaneous exposure machine for photoresist exposure [HMW-532D (Oak Seisakusho Co., Ltd.) was exposed to ultraviolet rays with an integrated light quantity of 100 to 500 mJ, and then developed by spraying a 1.0 wt% sodium carbonate aqueous solution at 30 ° C. with a spray pressure of 2 kg / cm 2 to develop The etching resist layer of the resist pattern was formed.

계속해서, 40℃의 염화제2구리 에칭액에 의해 구리노출 부분을 에칭 제거하 고, 수세 후, 40℃, 3.0중량%의 수산화나트륨 수용액을 스프레이압 2 kg/cm2로 분사하여, 에칭 레지스트층을 제거하여 도체 패턴의 금속 도체층을 형성하여 프린트 배선 기판을 제작했다.Subsequently, the copper-exposed part was etched away by a 40 ° C cupric chloride etching solution, and after washing with water, 40 ° C and 3.0% by weight of a sodium hydroxide aqueous solution were sprayed at a spray pressure of 2 kg / cm 2 to form an etching resist layer. Was removed, the metal conductor layer of the conductor pattern was formed, and the printed wiring board was produced.

상기와 같이하여 얻어진 프린트 배선 기판의 시험 결과를 표 1에 나타냈다.Table 1 shows the test results of the printed wiring board obtained as described above.

<표 1>TABLE 1

Figure 112007045671598-PAT00001
Figure 112007045671598-PAT00001

본 발명에 의하면, 택(tack)이 없는, 노광 감도 양호한 에칭 레지스트층을 형성할 수 있으므로 산업상 매우 중요한 발명이다.According to the present invention, an etching resist layer having good exposure sensitivity without a tack can be formed, which is a very important invention in industry.

Claims (5)

분자 중에 광중합가능한 에틸렌성 불포화기를 측쇄에 갖고 상기 에틸렌성 불포화기 당량이 100 ~ 1000g/eq인 수지를 적어도 1 종류와, 3개 이상의 에틸렌성 불포화기를 갖고 점도가 25℃, 1기압하에서 2000mPa·s 이상 4200mPa·s 이하인 감광성 화합물, 아울러 분자중에 광중합가능한 에틸렌성 불포화기를 갖지 않는 알칼리수용액에 가용가능한 수지를 함유하는 것을 특징으로 하는 감광성 수지 조성물.At least 1 type of resin which has an ethylenically unsaturated group which can be photopolymerizable in a molecule | numerator, and the said ethylenically unsaturated group equivalent is 100-1000 g / eq, and has 3 or more ethylenically unsaturated groups, and has a viscosity of 25 m and 2000 mPa * s under 1 atmosphere. A photosensitive resin composition comprising a photosensitive compound which is not less than 4200 mPa · s and a resin which is soluble in an alkaline aqueous solution having no ethylenically unsaturated group capable of photopolymerization in a molecule. 제1항에 있어서,The method of claim 1, 상기 감광성 수지 조성물 중에 함유되는 용제가 30중량% ~ 95중량%인 것을 특징으로 하는 감광성 수지 조성물.The solvent contained in the said photosensitive resin composition is 30 weight%-95 weight%, The photosensitive resin composition characterized by the above-mentioned. 절연 기판의 표면에 금속 도체층이 형성된 기판을 제1항 기재의 감광성 수지 조성물 중에 침지하고, 끌어올림으로써 기판의 표면에 감광성 수지 조성물을 도포하고, 포토마스크를 통하여 노광, 현상하여 소정의 레지스트 패턴의 에칭 레지스트층을 형성한 후, 기판에 에칭 처리를 실시함으로써 금속 도체층을 소정의 도체 패턴으로 형성하는 것을 특징으로 하는 프린트 배선 기판의 제조 방법.The substrate on which the metal conductor layer is formed on the surface of the insulated substrate is immersed in the photosensitive resin composition according to claim 1, and the substrate is coated with the photosensitive resin composition on the surface of the substrate. The substrate is exposed and developed through a photomask to form a predetermined resist pattern. A metal conductor layer is formed in a predetermined conductor pattern by forming an etching process on the substrate after forming the etching resist layer of the printed wiring board. 제1항에 있어서,The method of claim 1, 분자중에 광중합가능한 에틸렌성 불포화기를 갖지 않는 알칼리수용액에 가용 가능한 수지의 중량평균분자량이 5000 ~ 200000인 것을 특징으로 하는 감광성 수지 조성물.A photosensitive resin composition comprising a weight average molecular weight of 5000 to 200000 of a resin soluble in an alkaline aqueous solution having no photopolymerizable ethylenically unsaturated group in its molecule. 제1항에 있어서,The method of claim 1, 분자중에 광중합가능한 에틸렌성 불포화기를 갖지 않는 알칼리수용액에 가용가능한 수지의 산가가 20㎎KOH/g ~ 300㎎KOH/g인 것을 특징으로 하는 감광성 수지 조성물.The photosensitive resin composition characterized by the acid value of resin which can be used for the alkaline aqueous solution which does not have a photopolymerizable ethylenically unsaturated group in a molecule | numerator from 20 mgKOH / g-300 mgKOH / g.
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