KR20070070125A - 패턴 및 배선 패턴과 이들의 제조방법 - Google Patents

패턴 및 배선 패턴과 이들의 제조방법 Download PDF

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Publication number
KR20070070125A
KR20070070125A KR1020060136637A KR20060136637A KR20070070125A KR 20070070125 A KR20070070125 A KR 20070070125A KR 1020060136637 A KR1020060136637 A KR 1020060136637A KR 20060136637 A KR20060136637 A KR 20060136637A KR 20070070125 A KR20070070125 A KR 20070070125A
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KR
South Korea
Prior art keywords
photosensitive resin
resin composition
coating layer
layer
surface coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020060136637A
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English (en)
Korean (ko)
Inventor
다츠로 나가하라
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 filed Critical 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Publication of KR20070070125A publication Critical patent/KR20070070125A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1258—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0562—Details of resist
    • H05K2203/0568—Resist used for applying paste, ink or powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0562—Details of resist
    • H05K2203/0577—Double layer of resist having the same pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Materials For Photolithography (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020060136637A 2005-12-28 2006-12-28 패턴 및 배선 패턴과 이들의 제조방법 Ceased KR20070070125A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00379508 2005-12-28
JP2005379508A JP2007178885A (ja) 2005-12-28 2005-12-28 パターンおよび配線パターンならびにそれらの製造法

Publications (1)

Publication Number Publication Date
KR20070070125A true KR20070070125A (ko) 2007-07-03

Family

ID=38194244

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060136637A Ceased KR20070070125A (ko) 2005-12-28 2006-12-28 패턴 및 배선 패턴과 이들의 제조방법

Country Status (4)

Country Link
US (1) US20070148591A1 (https=)
JP (1) JP2007178885A (https=)
KR (1) KR20070070125A (https=)
TW (1) TWI420569B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846644B2 (en) * 2007-11-20 2010-12-07 Eastman Kodak Company Photopatternable deposition inhibitor containing siloxane
US20120288697A1 (en) * 2011-05-13 2012-11-15 Xerox Corporation Coating methods using silver nanoparticles
TWI617629B (zh) * 2013-05-01 2018-03-11 Jsr股份有限公司 具有凹圖案的基材的製造方法、組成物、導電膜的形成方法、電子電路及電子元件
CN113903873B (zh) * 2020-06-22 2023-04-07 京东方科技集团股份有限公司 量子点发光面板、显示装置和制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2574180B1 (fr) * 1984-12-04 1987-02-13 Centre Nat Rech Scient Procede et dispositif pour determiner l'angle de contact d'une goutte de liquide posee sur un substrat horizontal solide ou liquide
US4770974A (en) * 1986-09-18 1988-09-13 International Business Machines Corporation Microlithographic resist containing poly(1,1-dialkylsilazane)
JPH02254449A (ja) * 1989-03-29 1990-10-15 Konica Corp 湿し水不要の平版印刷版材料
JP3238369B2 (ja) * 1998-04-10 2001-12-10 ソニーケミカル株式会社 フォトレジスト用組成物、及びフレキシブルプリント配線板の製造方法
TW495494B (en) * 1998-10-05 2002-07-21 Tonengeneral Sekiyu Kk Photosensitive polysilazane composition and method of forming patterned polysilazane film
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US20040019176A1 (en) * 2000-08-29 2004-01-29 Takayuki Araki Curable fluoropolymer, curable resin composition containing the same, and antireflection film
JP2002243931A (ja) * 2001-02-19 2002-08-28 Canon Inc ブラックマトリクス基板、カラーフィルタ及びその製造方法、液晶素子
EP1495877B1 (en) * 2002-03-22 2007-08-22 Mitsubishi Heavy Industries, Ltd. Method for regenerating lithographic printing plate
EP1560070B1 (en) * 2002-10-09 2009-12-30 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
US7238462B2 (en) * 2002-11-27 2007-07-03 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for wiring, embedded material, and wiring formation method
JP4192737B2 (ja) * 2003-07-15 2008-12-10 セイコーエプソン株式会社 層パターン製造方法、配線製造方法、電子機器の製造方法
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物，レジスト保護膜材料及びパターン形成方法

Also Published As

Publication number Publication date
JP2007178885A (ja) 2007-07-12
TWI420569B (zh) 2013-12-21
US20070148591A1 (en) 2007-06-28
TW200731341A (en) 2007-08-16

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