KR20070061579A - 전해연마 전해질 및 이를 사용한 금속층의 평탄화 방법 - Google Patents

전해연마 전해질 및 이를 사용한 금속층의 평탄화 방법 Download PDF

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Publication number
KR20070061579A
KR20070061579A KR1020077010183A KR20077010183A KR20070061579A KR 20070061579 A KR20070061579 A KR 20070061579A KR 1020077010183 A KR1020077010183 A KR 1020077010183A KR 20077010183 A KR20077010183 A KR 20077010183A KR 20070061579 A KR20070061579 A KR 20070061579A
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KR
South Korea
Prior art keywords
acid
electropolishing
phosphoric acid
volume ratio
metal layer
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Withdrawn
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KR1020077010183A
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English (en)
Korean (ko)
Inventor
지아 민 시에
수 홍 리우
다이 보우 통
Original Assignee
바스프 악티엔게젤샤프트
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Publication of KR20070061579A publication Critical patent/KR20070061579A/ko
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/12—Working media
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Fuel Cell (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077010183A 2004-10-06 2005-10-01 전해연마 전해질 및 이를 사용한 금속층의 평탄화 방법 Withdrawn KR20070061579A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093130211A TWI294923B (en) 2004-10-06 2004-10-06 Electropolishing electrolyte and method for planarizing a metal layer using the same
TW93130211 2004-10-06

Publications (1)

Publication Number Publication Date
KR20070061579A true KR20070061579A (ko) 2007-06-13

Family

ID=35636650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077010183A Withdrawn KR20070061579A (ko) 2004-10-06 2005-10-01 전해연마 전해질 및 이를 사용한 금속층의 평탄화 방법

Country Status (13)

Country Link
US (1) US7501051B2 (enExample)
EP (1) EP1935013A1 (enExample)
JP (1) JP2008516083A (enExample)
KR (1) KR20070061579A (enExample)
AT (1) AT503087A2 (enExample)
CH (1) CH698385B1 (enExample)
DE (1) DE112005002414T5 (enExample)
GB (1) GB2434159B (enExample)
IL (1) IL182224A0 (enExample)
MY (1) MY141248A (enExample)
RU (1) RU2007116697A (enExample)
TW (1) TWI294923B (enExample)
WO (1) WO2006037584A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100783006B1 (ko) * 2007-08-09 2007-12-07 신승균 동 도금된 마그네슘합금 및 그 형성방법
KR101464860B1 (ko) * 2013-02-06 2014-11-24 인천대학교 산학협력단 알릴 알콜을 포함하는 금속 씨앗층 평탄제 및 이를 이용한 씨앗층의 형성방법
WO2020138976A1 (ko) * 2018-12-26 2020-07-02 한양대학교에리카산학협력단 반도체 소자의 제조 방법
KR102258703B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면구조를 가지는 버스바 제조방법
KR102258702B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면 구조를 가지는 버스바
WO2022114330A1 (ko) * 2020-11-30 2022-06-02 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TR201815028T4 (tr) * 2009-11-23 2018-11-21 MetCon LLC Elektro parlatma yöntemleri.
US8580103B2 (en) 2010-11-22 2013-11-12 Metcon, Llc Electrolyte solution and electrochemical surface modification methods
CN102337569B (zh) * 2011-09-19 2014-06-11 华南理工大学 一种钴-钨纳米合金镀层及其制备方法
RU2471595C1 (ru) * 2011-12-07 2013-01-10 Открытое акционерное общество "Научно-производственное объединение "Сатурн" Электролит для электрохимической обработки
US9648723B2 (en) 2015-09-16 2017-05-09 International Business Machines Corporation Process of fabricating printed circuit board
DE102020200815A1 (de) 2020-01-23 2021-07-29 Mahle International Gmbh Zusammensetzung als Elektrolyt zum Auflösen und/oder Abscheiden von Metallen, Metalloxiden und/oder Metalllegierungen sowie Verwendungen dieser Zusammensetzung
US11447887B2 (en) * 2020-12-10 2022-09-20 Saudi Arabian Oil Company Surface smoothing of copper by electropolishing
US11512400B2 (en) 2020-12-10 2022-11-29 Saudi Arabian Oil Company Electrochemical reduction of carbon dioxide
CN113337877A (zh) * 2021-05-17 2021-09-03 安徽昀水表面科技有限公司 一种电解抛光药水及电解抛光加工工艺
US11718575B2 (en) 2021-08-12 2023-08-08 Saudi Arabian Oil Company Methanol production via dry reforming and methanol synthesis in a vessel
US11787759B2 (en) 2021-08-12 2023-10-17 Saudi Arabian Oil Company Dimethyl ether production via dry reforming and dimethyl ether synthesis in a vessel
US12258272B2 (en) 2021-08-12 2025-03-25 Saudi Arabian Oil Company Dry reforming of methane using a nickel-based bi-metallic catalyst
US11578016B1 (en) 2021-08-12 2023-02-14 Saudi Arabian Oil Company Olefin production via dry reforming and olefin synthesis in a vessel
US11617981B1 (en) 2022-01-03 2023-04-04 Saudi Arabian Oil Company Method for capturing CO2 with assisted vapor compression

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
GB726133A (en) * 1952-10-09 1955-03-16 Metro Cutanit Ltd Improvements relating to the electrolytic treatment of metal wire and the like
JPS5242134B2 (enExample) * 1972-12-30 1977-10-22
SU779453A1 (ru) * 1978-04-24 1980-11-15 Ленинградский Институт Ядерной Физики Им. Б.П.Константинова Ан Ссср Раствор дл электрохимического полировани металлической поверхности
US4920361A (en) * 1987-06-26 1990-04-24 Canon Kabushiki Kaisha Image recording method and apparatus therefor
US5066370A (en) * 1990-09-07 1991-11-19 International Business Machines Corporation Apparatus, electrochemical process, and electrolyte for microfinishing stainless steel print bands
JP2649625B2 (ja) 1991-12-10 1997-09-03 株式会社 ケミカル山本 含クロム合金鋼の電解琢磨用電解液
FR2747399B1 (fr) 1996-04-12 1998-05-07 Commissariat Energie Atomique Electrolyte pour l'electropolissage, procede d'electropolissage d'un acier inoxydable ou d'un alliage de nickel mettant en oeuvre cet electrolyte, et son application a la decontamination
US6491808B2 (en) * 1997-09-11 2002-12-10 Canon Kabushiki Kaisha Electrolytic etching method, method for producing photovoltaic element, and method for treating defect of photovoltaic element
AT410043B (de) * 1997-09-30 2003-01-27 Sez Ag Verfahren zum planarisieren von halbleitersubstraten
TW571005B (en) * 2000-06-29 2004-01-11 Ebara Corp Method and apparatus for forming copper interconnects, and polishing liquid and polishing method
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
TW567545B (en) 2002-06-04 2003-12-21 Merck Kanto Advanced Chemical Electropolishing electrolytic solution formulation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100783006B1 (ko) * 2007-08-09 2007-12-07 신승균 동 도금된 마그네슘합금 및 그 형성방법
KR101464860B1 (ko) * 2013-02-06 2014-11-24 인천대학교 산학협력단 알릴 알콜을 포함하는 금속 씨앗층 평탄제 및 이를 이용한 씨앗층의 형성방법
WO2020138976A1 (ko) * 2018-12-26 2020-07-02 한양대학교에리카산학협력단 반도체 소자의 제조 방법
KR102258703B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면구조를 가지는 버스바 제조방법
KR102258702B1 (ko) 2020-09-07 2021-06-01 주식회사 근우 전기 전도율 향상을 위한 표면 구조를 가지는 버스바
WO2022114330A1 (ko) * 2020-11-30 2022-06-02 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지
KR20220075884A (ko) * 2020-11-30 2022-06-08 한국과학기술연구원 Cis계 박막의 평탄화 방법, 이를 이용하여 제조된 cis계 박막 및 상기 cis계 박막을 포함하는 태양전지

Also Published As

Publication number Publication date
TW200611998A (en) 2006-04-16
GB2434159A (en) 2007-07-18
DE112005002414T5 (de) 2007-09-27
GB2434159B (en) 2009-05-06
IL182224A0 (en) 2007-09-20
MY141248A (en) 2010-03-31
US7501051B2 (en) 2009-03-10
EP1935013A1 (en) 2008-06-25
GB0707076D0 (en) 2007-05-23
WO2006037584A1 (en) 2006-04-13
US20060070888A1 (en) 2006-04-06
JP2008516083A (ja) 2008-05-15
TWI294923B (en) 2008-03-21
AT503087A2 (de) 2007-07-15
RU2007116697A (ru) 2008-11-20
CH698385B1 (de) 2009-07-31

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PA0105 International application

Patent event date: 20070504

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid