KR20070037434A - 표면 적층물을 제거하기 위한 원격 챔버 방법 - Google Patents

표면 적층물을 제거하기 위한 원격 챔버 방법 Download PDF

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Publication number
KR20070037434A
KR20070037434A KR1020067021947A KR20067021947A KR20070037434A KR 20070037434 A KR20070037434 A KR 20070037434A KR 1020067021947 A KR1020067021947 A KR 1020067021947A KR 20067021947 A KR20067021947 A KR 20067021947A KR 20070037434 A KR20070037434 A KR 20070037434A
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KR
South Korea
Prior art keywords
gas mixture
oxygen
surface stack
gas
silicon
Prior art date
Application number
KR1020067021947A
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English (en)
Korean (ko)
Inventor
허버트 해롤드 사윈
보 바이
Original Assignee
매사추세츠 인스티튜트 오브 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 매사추세츠 인스티튜트 오브 테크놀로지 filed Critical 매사추세츠 인스티튜트 오브 테크놀로지
Publication of KR20070037434A publication Critical patent/KR20070037434A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)
KR1020067021947A 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법 KR20070037434A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US60/556,227 2004-03-24
US64044404P 2004-12-30 2004-12-30
US64083304P 2004-12-30 2004-12-30
US60/640,833 2004-12-30
US60/640,444 2004-12-30

Publications (1)

Publication Number Publication Date
KR20070037434A true KR20070037434A (ko) 2007-04-04

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020067021947A KR20070037434A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021948A KR20070043697A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021949A KR20070040748A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020067021948A KR20070043697A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법
KR1020067021949A KR20070040748A (ko) 2004-03-24 2005-03-24 표면 적층물을 제거하기 위한 원격 챔버 방법

Country Status (6)

Country Link
EP (3) EP1733072A2 (de)
JP (3) JP2007530792A (de)
KR (3) KR20070037434A (de)
BR (3) BRPI0508205A (de)
TW (3) TWI284929B (de)
WO (3) WO2005098086A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160105407A (ko) * 2013-12-30 2016-09-06 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (de) * 1994-07-21 1996-02-21 Applied Materials, Inc. Verfahren und Vorrichtung zur Reinigung einer Beschichtungskammer
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
JP2009503271A (ja) * 2005-08-02 2009-01-29 マサチューセッツ インスティテュート オブ テクノロジー Ｃｖｄ／ｐｅｃｖｄ−プラズマチャンバーの内部から表面沈着物を除去するためのフッ化硫黄を使用する遠隔チャンバー方法
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US10240230B2 (en) * 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (ja) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 プラズマクリーニング方法およびプラズマクリーニング装置
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
SG11202106864TA (en) * 2018-12-25 2021-07-29 Showa Denko Kk Adhesion removal method and film-forming method
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
CN116145106A (zh) * 2023-02-21 2023-05-23 苏州鼎芯光电科技有限公司 一种用于半导体镀膜工艺腔室的清洁方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160105407A (ko) * 2013-12-30 2016-09-06 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체
KR20220070062A (ko) * 2013-12-30 2022-05-27 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체

Also Published As

Publication number Publication date
WO2005095670A3 (en) 2006-05-04
WO2005090638A3 (en) 2006-04-13
WO2005095670A2 (en) 2005-10-13
BRPI0508204A (pt) 2007-07-17
WO2005098086A3 (en) 2006-05-04
KR20070043697A (ko) 2007-04-25
JP2007531289A (ja) 2007-11-01
WO2005090638A8 (en) 2006-11-16
WO2005098086A2 (en) 2005-10-20
JP2007531288A (ja) 2007-11-01
TW200623281A (en) 2006-07-01
TW200623251A (en) 2006-07-01
TWI281715B (en) 2007-05-21
EP1733071A2 (de) 2006-12-20
TWI281714B (en) 2007-05-21
WO2005090638A2 (en) 2005-09-29
BRPI0508214A (pt) 2007-07-17
TWI284929B (en) 2007-08-01
TW200623240A (en) 2006-07-01
JP2007530792A (ja) 2007-11-01
BRPI0508205A (pt) 2007-07-17
EP1737998A2 (de) 2007-01-03
EP1733072A2 (de) 2006-12-20
KR20070040748A (ko) 2007-04-17
WO2005090638A9 (en) 2006-01-26

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