Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32853—Hygiene
  • H01J37/32862—In situ cleaning of vessels and/or internal parts
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
  • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
  • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
  • Y02C20/00—Capture or disposal of greenhouse gases
  • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Definitions

• PECVD plasma-on-assisted chemical vapor deposition
• the use of remote plasma sources avoids some of the erosion of the interior chamber materials that occurs with in situ chamber cleans in which the cleaning is performed by creating a plasma discharge within the PECVD chamber.
• capacitively and inductively coupled RF as well as microwave remote sources have been developed for these sorts of applications, the industry is rapidly moving toward transformer coupled inductively coupled sources in which the plasma has a torroidal configuration and acts as the secondary of the transformer.
• the use of lower frequency RF power allows the use of magnetic cores which enhance the inductive coupling with respect to capacitive coupling; thereby allowing the more efficient transfer of energy to the plasma without excessive ion bombardment which limits the lifetime of the remote plasma source chamber interior.
• a pretreatment gas mixture that is activated to treat the interior surface of the pathway through which an activated cleaning gas passes to the process chamber comprises fluorocarbon and optionally oxygen.
• a preferred pretreatment gas mixture has oxygen verses fluorocarbon molar ratio of less than 1 :1.
• a more preferred pretreatment gas mixture contains no oxygen.
• a cleaning gas mixture that is activated to remove the surface deposition comprises oxygen and fluorocarbon.
• a preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least 1:3.
• a more preferred cleaning gas mixture has oxygen verses fluorocarbon molar ratio of at least from about 2:1 to about 20:1.
• the fluorocarbon of the invention is herein referred to as a compound comprising of C and F.
• Preferred fluorocarbon in this invention is perfluorocarbon compound.
• fluorocarbon rich plasma it is meant that the gas mixture comprising fluorocarbon and optionally oxygen wherein the molar ratio of oxygen and fluorocarbon is less than about 1 :1 is activated to form a plasma.
• the cleaning gas mixture is composed of
• the fluorocarbon is Zyron® C318N4 with minimum 99.99 vol % of octafluorocyclobutane, and Zyron® 8020 with minimum 99.9 vol % of octafluorocyclobutane, both are manufactured by DuPont and supplied in cylinders.
• Nitrogen source in the examples is nitrogen gas manufactured by Airgas with grade of 4.8 and Argon is manufactured by Airgas with grade of 5.0.
• the activated gas then passed through an aluminum water-cooled heat exchanger to reduce the thermal loading of the aluminum process chamber.
• the surface deposits covered wafer was placed on a temperature controlled mounting in the process chamber.
• the neutral temperature is measured by Optical Emission Spectroscopy (OES), in which rovibrational transition bands of diatomic species like C 2 and N 2 are theoretically fitted to yield neutral temperature. See also B. Bai and H. Sawin, Journal of Vacuum Science & Technology A 22 (5), 2014 (2004), herein incorporated as a reference.
• the etching rate of the surface deposits by the activated gas is measured by interferometry equipment in the process chamber.
• N 2 gas is added at the entrance of the pump both to dilute the products to a proper concentration for FTIR measurement and TO re ⁇ uce tne nang-up o ⁇ pro ⁇ ucis in the pump in the case that wet pump is used.
• FTIR was used to measure the concentration of species in the pump exhaust.
• Example 1 It was discovered that after certain periods of use, the etching rate of Zyron® C318N4 will drop to approximately one half of the previous rate. At the same time a much larger amount of COF 2 in the effluent gases was observed. It was also found that rapid closing and opening of the oxygen valve for a period of a few seconds could increase the etching rate back to the previous level.
• the feeding gas composed of O 2 , Zyron® C318N4 (C 4 F ⁇ ) and Ar, wherein O 2 flow rate is 1750 seem, Ar flow rate is 2000 seem, C F ⁇ flow rate is 250 seem. Chamber pressure is 2 torr.
• etching rate jumped up at the transient closing off of oxygen.
• the etching rate then slowly decreased and leveled off corresponding to the COF 2 and CO 2 concentration change in the emission gases.
• the RF power was turned off at 450 seconds.
• the gas mixture passed through the heat exchanger for two minutes. After the treatment, the etching rate was measured again under the same condition as before the treatment. The etching rate was found to be 1150 Angstrom/min, 30% higher than the one before the treatment.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Organic Chemistry (AREA)
• Metallurgy (AREA)
• Mechanical Engineering (AREA)
• Materials Engineering (AREA)
• Physics & Mathematics (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Plasma & Fusion (AREA)
• Computer Hardware Design (AREA)
• Manufacturing & Machinery (AREA)
• General Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Health & Medical Sciences (AREA)
• Epidemiology (AREA)
• Public Health (AREA)
• Power Engineering (AREA)
• Analytical Chemistry (AREA)
• Optics & Photonics (AREA)
• Drying Of Semiconductors (AREA)
• Chemical Vapour Deposition (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• Cleaning In General (AREA)
• ing And Chemical Polishing (AREA)

Applications Claiming Priority (4)

Publications (1)

Family

ID=34965582

Family Applications (3)

Family Applications Before (1)

Family Applications After (1)

Country Status (6)

Families Citing this family (12)

Family Cites Families (2)

• 2005
  • 2005-03-24 EP EP05760380A patent/EP1733072A2/de not_active Withdrawn
  • 2005-03-24 KR KR1020067021947A patent/KR20070037434A/ko not_active Application Discontinuation
  • 2005-03-24 KR KR1020067021948A patent/KR20070043697A/ko not_active Application Discontinuation
  • 2005-03-24 JP JP2007505281A patent/JP2007530792A/ja not_active Withdrawn
  • 2005-03-24 EP EP05734780A patent/EP1733071A2/de not_active Withdrawn
  • 2005-03-24 JP JP2007505282A patent/JP2007531288A/ja active Pending
  • 2005-03-24 BR BRPI0508205-6A patent/BRPI0508205A/pt not_active Application Discontinuation
  • 2005-03-24 WO PCT/US2005/010692 patent/WO2005098086A2/en active Application Filing
  • 2005-03-24 WO PCT/US2005/010691 patent/WO2005095670A2/en active Application Filing
  • 2005-03-24 BR BRPI0508214-5A patent/BRPI0508214A/pt not_active IP Right Cessation
  • 2005-03-24 EP EP05760434A patent/EP1737998A2/de not_active Withdrawn
  • 2005-03-24 KR KR1020067021949A patent/KR20070040748A/ko not_active Application Discontinuation
  • 2005-03-24 BR BRPI0508204-8A patent/BRPI0508204A/pt not_active IP Right Cessation
  • 2005-03-24 JP JP2007505283A patent/JP2007531289A/ja not_active Withdrawn
  • 2005-03-24 WO PCT/US2005/010693 patent/WO2005090638A2/en active Application Filing
  • 2005-06-28 TW TW094121537A patent/TWI284929B/zh not_active IP Right Cessation
  • 2005-06-28 TW TW094121538A patent/TWI281714B/zh not_active IP Right Cessation
  • 2005-06-28 TW TW094121536A patent/TWI281715B/zh not_active IP Right Cessation

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events