KR20060130105A - 패드 영역 아래에 디바이스를 갖는 웨이퍼 영역의 효율적인이용 - Google Patents

패드 영역 아래에 디바이스를 갖는 웨이퍼 영역의 효율적인이용 Download PDF

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Publication number
KR20060130105A
KR20060130105A KR1020067014331A KR20067014331A KR20060130105A KR 20060130105 A KR20060130105 A KR 20060130105A KR 1020067014331 A KR1020067014331 A KR 1020067014331A KR 20067014331 A KR20067014331 A KR 20067014331A KR 20060130105 A KR20060130105 A KR 20060130105A
Authority
KR
South Korea
Prior art keywords
metal layer
disposed
semiconductor structure
substrate
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067014331A
Other languages
English (en)
Korean (ko)
Inventor
니안 양
히로유키 오가와
이더 우유
쿠오-텅 창
유 선
달렌 쥐. 해밀톤
Original Assignee
스펜션 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스펜션 엘엘씨 filed Critical 스펜션 엘엘씨
Publication of KR20060130105A publication Critical patent/KR20060130105A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Wire Bonding (AREA)
KR1020067014331A 2004-01-14 2004-12-17 패드 영역 아래에 디바이스를 갖는 웨이퍼 영역의 효율적인이용 Ceased KR20060130105A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/758,148 2004-01-14
US10/758,148 US20050151265A1 (en) 2004-01-14 2004-01-14 Efficient use of wafer area with device under the pad approach

Publications (1)

Publication Number Publication Date
KR20060130105A true KR20060130105A (ko) 2006-12-18

Family

ID=34740122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067014331A Ceased KR20060130105A (ko) 2004-01-14 2004-12-17 패드 영역 아래에 디바이스를 갖는 웨이퍼 영역의 효율적인이용

Country Status (7)

Country Link
US (1) US20050151265A1 (https=)
EP (1) EP1709685A1 (https=)
JP (1) JP2007518269A (https=)
KR (1) KR20060130105A (https=)
CN (1) CN1910752A (https=)
TW (1) TW200529370A (https=)
WO (1) WO2005071749A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115321B2 (en) * 2009-04-30 2012-02-14 Lsi Corporation Separate probe and bond regions of an integrated circuit
CN103390647A (zh) * 2012-05-10 2013-11-13 无锡华润上华半导体有限公司 一种功率mos器件结构
CN110491849B (zh) * 2019-07-18 2024-11-08 珠海零边界集成电路有限公司 芯片、输入输出结构和垫层

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166273A (ja) * 1986-12-27 1988-07-09 Tdk Corp 縦形半導体装置
JPH06275794A (ja) * 1993-03-18 1994-09-30 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
EP0637840A1 (en) 1993-08-05 1995-02-08 AT&T Corp. Integrated circuit with active devices under bond pads
US7067442B1 (en) * 1995-12-26 2006-06-27 Micron Technology, Inc. Method to avoid threshold voltage shift in thicker dielectric films
JP3157715B2 (ja) * 1996-05-30 2001-04-16 山形日本電気株式会社 半導体集積回路
JPH10335627A (ja) * 1997-05-27 1998-12-18 Sony Corp 固体撮像装置
US5986343A (en) * 1998-05-04 1999-11-16 Lucent Technologies Inc. Bond pad design for integrated circuits
TW445616B (en) 1998-12-04 2001-07-11 Koninkl Philips Electronics Nv An integrated circuit device
JP3505433B2 (ja) 1999-05-21 2004-03-08 三洋電機株式会社 半導体装置
US7199039B2 (en) * 2003-05-19 2007-04-03 Intel Corporation Interconnect routing over semiconductor for editing through the back side of an integrated circuit
JP4492926B2 (ja) * 2003-11-28 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
TW200529370A (en) 2005-09-01
US20050151265A1 (en) 2005-07-14
WO2005071749A1 (en) 2005-08-04
EP1709685A1 (en) 2006-10-11
JP2007518269A (ja) 2007-07-05
CN1910752A (zh) 2007-02-07

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