JP2007518269A5 - - Google Patents
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- Publication number
- JP2007518269A5 JP2007518269A5 JP2006549303A JP2006549303A JP2007518269A5 JP 2007518269 A5 JP2007518269 A5 JP 2007518269A5 JP 2006549303 A JP2006549303 A JP 2006549303A JP 2006549303 A JP2006549303 A JP 2006549303A JP 2007518269 A5 JP2007518269 A5 JP 2007518269A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- disposed
- semiconductor structure
- pad area
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 149
- 239000002184 metal Substances 0.000 claims description 149
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 37
- 230000006870 function Effects 0.000 claims description 6
- 230000006386 memory function Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 144
- 238000000034 method Methods 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/758,148 US20050151265A1 (en) | 2004-01-14 | 2004-01-14 | Efficient use of wafer area with device under the pad approach |
| PCT/US2004/042879 WO2005071749A1 (en) | 2004-01-14 | 2004-12-17 | Efficient use of wafer area with device under the pad approach |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007518269A JP2007518269A (ja) | 2007-07-05 |
| JP2007518269A5 true JP2007518269A5 (https=) | 2007-10-11 |
Family
ID=34740122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006549303A Pending JP2007518269A (ja) | 2004-01-14 | 2004-12-17 | パッド下に素子を備える手法によるウェハの有効利用 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050151265A1 (https=) |
| EP (1) | EP1709685A1 (https=) |
| JP (1) | JP2007518269A (https=) |
| KR (1) | KR20060130105A (https=) |
| CN (1) | CN1910752A (https=) |
| TW (1) | TW200529370A (https=) |
| WO (1) | WO2005071749A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8115321B2 (en) * | 2009-04-30 | 2012-02-14 | Lsi Corporation | Separate probe and bond regions of an integrated circuit |
| CN103390647A (zh) * | 2012-05-10 | 2013-11-13 | 无锡华润上华半导体有限公司 | 一种功率mos器件结构 |
| CN110491849B (zh) * | 2019-07-18 | 2024-11-08 | 珠海零边界集成电路有限公司 | 芯片、输入输出结构和垫层 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63166273A (ja) * | 1986-12-27 | 1988-07-09 | Tdk Corp | 縦形半導体装置 |
| JPH06275794A (ja) * | 1993-03-18 | 1994-09-30 | Matsushita Electric Ind Co Ltd | 半導体記憶装置およびその製造方法 |
| EP0637840A1 (en) | 1993-08-05 | 1995-02-08 | AT&T Corp. | Integrated circuit with active devices under bond pads |
| US7067442B1 (en) * | 1995-12-26 | 2006-06-27 | Micron Technology, Inc. | Method to avoid threshold voltage shift in thicker dielectric films |
| JP3157715B2 (ja) * | 1996-05-30 | 2001-04-16 | 山形日本電気株式会社 | 半導体集積回路 |
| JPH10335627A (ja) * | 1997-05-27 | 1998-12-18 | Sony Corp | 固体撮像装置 |
| US5986343A (en) * | 1998-05-04 | 1999-11-16 | Lucent Technologies Inc. | Bond pad design for integrated circuits |
| TW445616B (en) | 1998-12-04 | 2001-07-11 | Koninkl Philips Electronics Nv | An integrated circuit device |
| JP3505433B2 (ja) | 1999-05-21 | 2004-03-08 | 三洋電機株式会社 | 半導体装置 |
| US7199039B2 (en) * | 2003-05-19 | 2007-04-03 | Intel Corporation | Interconnect routing over semiconductor for editing through the back side of an integrated circuit |
| JP4492926B2 (ja) * | 2003-11-28 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2004
- 2004-01-14 US US10/758,148 patent/US20050151265A1/en not_active Abandoned
- 2004-12-17 KR KR1020067014331A patent/KR20060130105A/ko not_active Ceased
- 2004-12-17 CN CNA2004800404461A patent/CN1910752A/zh active Pending
- 2004-12-17 JP JP2006549303A patent/JP2007518269A/ja active Pending
- 2004-12-17 WO PCT/US2004/042879 patent/WO2005071749A1/en not_active Ceased
- 2004-12-17 EP EP04815008A patent/EP1709685A1/en not_active Withdrawn
-
2005
- 2005-01-12 TW TW094100806A patent/TW200529370A/zh unknown
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