KR20060120687A - 기판 처리 장치의 제어 방법 및 기판 처리 장치 기술 분야 - Google Patents

기판 처리 장치의 제어 방법 및 기판 처리 장치 기술 분야 Download PDF

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Publication number
KR20060120687A
KR20060120687A KR1020067011242A KR20067011242A KR20060120687A KR 20060120687 A KR20060120687 A KR 20060120687A KR 1020067011242 A KR1020067011242 A KR 1020067011242A KR 20067011242 A KR20067011242 A KR 20067011242A KR 20060120687 A KR20060120687 A KR 20060120687A
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KR
South Korea
Prior art keywords
substrate
inspection
flow
unit
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067011242A
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English (en)
Korean (ko)
Inventor
신이치 시노즈카
시게키 와다
마사미 야마시타
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20060120687A publication Critical patent/KR20060120687A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • General Factory Administration (AREA)
KR1020067011242A 2003-12-09 2004-11-30 기판 처리 장치의 제어 방법 및 기판 처리 장치 기술 분야 Ceased KR20060120687A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003410105A JP4342921B2 (ja) 2003-12-09 2003-12-09 基板処理装置の制御方法及び基板処理装置
JPJP-P-2003-00410105 2003-12-09

Publications (1)

Publication Number Publication Date
KR20060120687A true KR20060120687A (ko) 2006-11-27

Family

ID=34674920

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067011242A Ceased KR20060120687A (ko) 2003-12-09 2004-11-30 기판 처리 장치의 제어 방법 및 기판 처리 장치 기술 분야

Country Status (7)

Country Link
US (1) US7529595B2 (https=)
EP (1) EP1693886A4 (https=)
JP (1) JP4342921B2 (https=)
KR (1) KR20060120687A (https=)
CN (1) CN100452294C (https=)
TW (1) TW200526494A (https=)
WO (1) WO2005057633A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4734002B2 (ja) 2005-03-16 2011-07-27 株式会社東芝 検査システム及び半導体装置の製造方法
US20070250202A1 (en) 2006-04-17 2007-10-25 Tokyo Electron Limited Coating and developing system, method of controlling coating and developing system and storage medium
JP4560022B2 (ja) * 2006-09-12 2010-10-13 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
JP5058744B2 (ja) * 2006-10-12 2012-10-24 東京エレクトロン株式会社 基板の測定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び基板の処理システム
CN100465797C (zh) * 2007-01-24 2009-03-04 友达光电股份有限公司 具有宏观检测的显影装置
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4957426B2 (ja) * 2007-07-19 2012-06-20 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の運転方法並びに記憶媒体
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4983724B2 (ja) 2008-05-27 2012-07-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法並びに記憶媒体
JP5744382B2 (ja) * 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP4770938B2 (ja) * 2009-02-10 2011-09-14 東京エレクトロン株式会社 基板処理装置
JP2011211218A (ja) * 2011-06-02 2011-10-20 Tokyo Electron Ltd 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
CN104267708A (zh) * 2014-10-20 2015-01-07 宜宾丝丽雅股份有限公司 短纤磺化流量信号丢失的检测方法
JP7274350B2 (ja) * 2019-05-28 2023-05-16 東京エレクトロン株式会社 搬送システム、検査システム及び検査方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10172902A (ja) * 1996-12-13 1998-06-26 Nikon Corp 重ね合わせ検査方法
JPH11176912A (ja) * 1997-12-08 1999-07-02 Mitsubishi Electric Corp 半導体基板処理装置及びその制御方法
JP3455458B2 (ja) 1999-02-01 2003-10-14 東京エレクトロン株式会社 塗布、現像装置及び塗布現像処理における基板再生システム
JP2001167996A (ja) * 1999-12-10 2001-06-22 Tokyo Electron Ltd 基板処理装置
JP4069236B2 (ja) * 2000-06-05 2008-04-02 東京エレクトロン株式会社 液処理装置
TW499702B (en) * 2000-07-04 2002-08-21 Tokyo Electron Ltd Method for monitoring operation of processing apparatus
KR100793453B1 (ko) * 2000-07-07 2008-01-14 동경 엘렉트론 주식회사 처리 장치의 유지 보수 방법, 처리 장치의 자동 검사방법, 처리 장치의 자동 복귀 방법 및 처리 장치를구동하는 소프트웨어의 자기 진단 방법
SG94851A1 (en) * 2000-07-12 2003-03-18 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
KR100811964B1 (ko) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 레지스트 패턴 형성장치 및 그 방법
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP2003037043A (ja) * 2001-07-24 2003-02-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム
JP2003045776A (ja) * 2001-07-30 2003-02-14 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003115426A (ja) 2001-07-30 2003-04-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理システム
KR20030026862A (ko) * 2001-09-25 2003-04-03 다이닛뽕스크린 세이조오 가부시키가이샤 기판 처리장치 제어 시스템 및 기판 처리장치
JP2003100610A (ja) * 2001-09-26 2003-04-04 Dainippon Screen Mfg Co Ltd 基板処理装置制御システムおよび基板処理装置
JP3761081B2 (ja) * 2001-11-09 2006-03-29 東京エレクトロン株式会社 基板処理装置
JP2003158050A (ja) * 2001-11-21 2003-05-30 Dainippon Screen Mfg Co Ltd 基板処理システム及び基板検査システム
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus

Also Published As

Publication number Publication date
JP4342921B2 (ja) 2009-10-14
US7529595B2 (en) 2009-05-05
TWI293938B (https=) 2008-03-01
TW200526494A (en) 2005-08-16
EP1693886A1 (en) 2006-08-23
CN1890780A (zh) 2007-01-03
CN100452294C (zh) 2009-01-14
JP2005175052A (ja) 2005-06-30
WO2005057633A1 (ja) 2005-06-23
US20070088450A1 (en) 2007-04-19
EP1693886A4 (en) 2011-08-17

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