KR20060101499A - 화합물 반도체 기판의 제조 방법 - Google Patents

화합물 반도체 기판의 제조 방법 Download PDF

Info

Publication number
KR20060101499A
KR20060101499A KR1020067010033A KR20067010033A KR20060101499A KR 20060101499 A KR20060101499 A KR 20060101499A KR 1020067010033 A KR1020067010033 A KR 1020067010033A KR 20067010033 A KR20067010033 A KR 20067010033A KR 20060101499 A KR20060101499 A KR 20060101499A
Authority
KR
South Korea
Prior art keywords
substrate
compound semiconductor
functional layer
semiconductor functional
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067010033A
Other languages
English (en)
Korean (ko)
Inventor
마사히코 하타
요시노부 오노
가즈마사 우에다
Original Assignee
스미또모 가가꾸 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미또모 가가꾸 가부시키가이샤 filed Critical 스미또모 가가꾸 가부시키가이샤
Publication of KR20060101499A publication Critical patent/KR20060101499A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
KR1020067010033A 2003-10-27 2004-10-25 화합물 반도체 기판의 제조 방법 Ceased KR20060101499A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00365736 2003-10-27
JP2003365736A JP2005129825A (ja) 2003-10-27 2003-10-27 化合物半導体基板の製造方法

Publications (1)

Publication Number Publication Date
KR20060101499A true KR20060101499A (ko) 2006-09-25

Family

ID=34510191

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067010033A Ceased KR20060101499A (ko) 2003-10-27 2004-10-25 화합물 반도체 기판의 제조 방법

Country Status (8)

Country Link
US (1) US20070082467A1 (https=)
JP (1) JP2005129825A (https=)
KR (1) KR20060101499A (https=)
CN (1) CN1871699B (https=)
DE (1) DE112004002033T5 (https=)
GB (1) GB2422489B8 (https=)
TW (1) TW200520212A (https=)
WO (1) WO2005041287A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180086152A (ko) 2017-01-20 2018-07-30 한양대학교 산학협력단 3차원 뉴로모픽 소자 및 그 제조방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284167A1 (en) * 2005-06-17 2006-12-21 Godfrey Augustine Multilayered substrate obtained via wafer bonding for power applications
US7799599B1 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Single crystal silicon carbide layers on diamond and associated methods
JP2009143756A (ja) * 2007-12-13 2009-07-02 Shin Etsu Chem Co Ltd ＧａＮ層含有積層基板及びその製造方法並びにデバイス
JP5441094B2 (ja) * 2008-10-01 2014-03-12 国立大学法人京都工芸繊維大学 半導体基板の製造方法および半導体基板
JP5906001B2 (ja) * 2009-03-10 2016-04-20 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
WO2011005444A1 (en) * 2009-06-22 2011-01-13 Raytheon Company Gallium nitride for liquid crystal electrodes
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
JP5667109B2 (ja) * 2012-03-13 2015-02-12 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタおよびその製造方法
JP6004343B2 (ja) * 2013-09-13 2016-10-05 日本電信電話株式会社 半導体装置の製造方法
JP2016031953A (ja) 2014-07-25 2016-03-07 株式会社タムラ製作所 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体
JP2016197737A (ja) * 2016-06-29 2016-11-24 株式会社タムラ製作所 半導体素子及びその製造方法、並びに結晶積層構造体
SG10201913156WA (en) * 2017-07-14 2020-02-27 Shinetsu Chemical Co Device substrate with high thermal conductivity and method of manufacturing the same
JP6810017B2 (ja) * 2017-11-22 2021-01-06 日本電信電話株式会社 半導体ウエハの製造方法、ヘテロ接合バイポーラトランジスタの製造方法
JP7516786B2 (ja) * 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
JP7186921B2 (ja) 2020-04-13 2022-12-09 三菱電機株式会社 半導体素子の製造方法
GB202018616D0 (en) * 2020-11-26 2021-01-13 Element Six Tech Ltd A diamond assembly

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
JP2624119B2 (ja) * 1993-06-03 1997-06-25 日本電気株式会社 複合型半導体積層構造の製造方法
EP0651449B1 (en) * 1993-11-01 2002-02-13 Matsushita Electric Industrial Co., Ltd. Electronic component and method for producing the same
GB9401770D0 (en) * 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
JP2669368B2 (ja) * 1994-03-16 1997-10-27 日本電気株式会社 Ｓｉ基板上化合物半導体積層構造の製造方法
JPH11103125A (ja) * 1997-09-29 1999-04-13 Furukawa Electric Co Ltd:The 面発光型半導体レーザ装置の作製方法
US6287941B1 (en) * 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
KR100909733B1 (ko) * 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
US6830813B2 (en) * 2003-03-27 2004-12-14 Intel Corporation Stress-reducing structure for electronic devices
US7407863B2 (en) * 2003-10-07 2008-08-05 Board Of Trustees Of The University Of Illinois Adhesive bonding with low temperature grown amorphous or polycrystalline compound semiconductors
US7547925B2 (en) * 2005-11-14 2009-06-16 Palo Alto Research Center Incorporated Superlattice strain relief layer for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180086152A (ko) 2017-01-20 2018-07-30 한양대학교 산학협력단 3차원 뉴로모픽 소자 및 그 제조방법

Also Published As

Publication number Publication date
JP2005129825A (ja) 2005-05-19
DE112004002033T5 (de) 2006-09-21
GB2422489B8 (en) 2007-03-30
GB2422489B (en) 2007-03-14
CN1871699A (zh) 2006-11-29
WO2005041287A1 (ja) 2005-05-06
TW200520212A (en) 2005-06-16
CN1871699B (zh) 2012-06-27
GB0609682D0 (en) 2006-06-28
GB2422489A (en) 2006-07-26
US20070082467A1 (en) 2007-04-12

Similar Documents

Publication Publication Date Title
JP4095066B2 (ja) 窒化ガリウムベース半導体の半導体構造
CN100580880C (zh) 用于光电子应用的基板的制造方法
JP3946427B2 (ja) エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
KR20060101499A (ko) 화합물 반도체 기판의 제조 방법
US8664086B2 (en) Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices
JP3914615B2 (ja) 半導体発光素子及びその製造方法
CN104756245B (zh) 具有提高的可靠性和工作寿命的半导体器件及其制造方法
JP2006521984A (ja) Ｉｉｉ族の窒化物装置を製作する方法およびそのように製作された装置
US8709950B2 (en) Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate
US20080210970A1 (en) Fabrication of Conductive Metal Layer on Semiconductor Devices
EP1668688A1 (en) Fabrication of semiconductor devices
CN107731903A (zh) 基于SOI结构金刚石复合衬底的GaN高电子迁移率器件及制备方法
KR20120083307A (ko) 화합물 반도체 결정의 제조 방법, 전자 디바이스의 제조 방법, 및 반도체 기판
US8395184B2 (en) Semiconductor device based on the cubic silicon carbide single crystal thin film
US20060124956A1 (en) Quasi group III-nitride substrates and methods of mass production of the same
TW202231946A (zh) 紫外線發光元件用磊晶晶圓、紫外線發光元件用金屬貼合基板的製造方法、紫外線發光元件的製造方法、及紫外線發光元件陣列的製造方法
CN102334203B (zh) 发光器件的制造方法
JP2009190918A (ja) 窒化物半導体基板の製造方法及び窒化物半導体装置の製造方法
JP2013115112A (ja) 複合基板の製造方法および半導体デバイスの製造方法
KR101105918B1 (ko) 질화물 반도체 소자의 제조방법
JP2000208813A (ja) ＧａＮ系半導体素子およびその製造方法
JP2012142366A (ja) 半導体デバイスの製造方法およびエピタキシャル成長用の支持基板
JP6810017B2 (ja) 半導体ウエハの製造方法、ヘテロ接合バイポーラトランジスタの製造方法
KR102735920B1 (ko) 자기 지지 서브스트레이트의 제조 방법
JP2002151409A (ja) 半導体装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20120530

Effective date: 20130930

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20130930

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2006 7010033

Appeal request date: 20120530

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2012101005228

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000