KR20060078668A - 반도체 소자의 금속 배선 형성 방법 - Google Patents
반도체 소자의 금속 배선 형성 방법 Download PDFInfo
- Publication number
- KR20060078668A KR20060078668A KR1020040116980A KR20040116980A KR20060078668A KR 20060078668 A KR20060078668 A KR 20060078668A KR 1020040116980 A KR1020040116980 A KR 1020040116980A KR 20040116980 A KR20040116980 A KR 20040116980A KR 20060078668 A KR20060078668 A KR 20060078668A
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- Prior art keywords
- layer
- oxide film
- metal
- metal layer
- metal wiring
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 95
- 239000002184 metal Substances 0.000 title claims abstract description 95
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010936 titanium Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- -1 silicon oxy nitride Chemical class 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract description 11
- 238000000059 patterning Methods 0.000 abstract description 6
- 238000010406 interfacial reaction Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (6)
- 반도체 기판 상부에 하부 금속층, 알루미늄층 및 상부 금속층을 형성하는 단계;상기 상부 금속층 상부에 제 1 산화막 및 금속 배선을 정의하는 감광막 패턴을 형성하는 단계;상기 감광막 패턴을 마스크로 제 1 산화막을 식각하는 단계;상기 감광막 패턴 및 제 1 산화막을 식각 마스크로 상기 상부 금속층 및 알루미늄층을 식각하여 금속 배선 패턴을 형성하는 단계;상기 감광막 패턴을 제거하고 상기 금속 배선 패턴을 포함하는 반도체 기판 전면에 제 2 산화막을 형성하는 단계;전면 식각을 수행하여 상기 금속 배선 패턴 상부 및 측벽의 제 2 산화막만 남기는 단계; 및상기 제 2 산화막을 마스크로 하부 금속층 및 소정 두께의 반도체 기판을 식각하는 단계;를 포함하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 상부 및 하부 금속층은 티타늄(Ti) 및 티타늄 질화막(TiN)의 적층 구조로 형성하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 제 1 산화막은 실리콘 옥시 질화막(SiOxNy), 실리콘 질화막(Si3N4) 및 PE-CVD 방식의 산화막을 사용하여 형성하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 제 1 및 제 2 산화막 식각 공정은 각각 CxFy 기체를 주성분으로 CHFx, O2 및 Ar을 첨가하여 수행하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 알루미늄층 및 하부 금속층 식각 공정은 각각 Cl2, BCl3 및 N2를 혼합하여 사용하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 전면 식각 공정은 CHFx, O2 및 Ar의 조합된 기체를 사용하여 수행하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040116980A KR100599946B1 (ko) | 2004-12-30 | 2004-12-30 | 반도체 소자의 금속 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040116980A KR100599946B1 (ko) | 2004-12-30 | 2004-12-30 | 반도체 소자의 금속 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060078668A true KR20060078668A (ko) | 2006-07-05 |
KR100599946B1 KR100599946B1 (ko) | 2006-07-12 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020040116980A KR100599946B1 (ko) | 2004-12-30 | 2004-12-30 | 반도체 소자의 금속 배선 형성 방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730412A (zh) * | 2014-01-07 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 金属互连线的形成方法 |
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2004
- 2004-12-30 KR KR1020040116980A patent/KR100599946B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730412A (zh) * | 2014-01-07 | 2014-04-16 | 上海华虹宏力半导体制造有限公司 | 金属互连线的形成方法 |
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Publication number | Publication date |
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KR100599946B1 (ko) | 2006-07-12 |
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