KR20060063903A - 유기 반도체의 적층법 - Google Patents

유기 반도체의 적층법 Download PDF

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Publication number
KR20060063903A
KR20060063903A KR1020067001364A KR20067001364A KR20060063903A KR 20060063903 A KR20060063903 A KR 20060063903A KR 1020067001364 A KR1020067001364 A KR 1020067001364A KR 20067001364 A KR20067001364 A KR 20067001364A KR 20060063903 A KR20060063903 A KR 20060063903A
Authority
KR
South Korea
Prior art keywords
semiconductor
substrate
donor
lamination
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067001364A
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English (en)
Korean (ko)
Inventor
이리나 말라조비치
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20060063903A publication Critical patent/KR20060063903A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50Forming devices by joining two substrates together, e.g. lamination techniques
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702For plural parts or plural areas of single part
    • Y10T156/1705Lamina transferred to base from adhered flexible web or sheet type carrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020067001364A 2003-07-22 2004-07-22 유기 반도체의 적층법 Ceased KR20060063903A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US48933003P 2003-07-22 2003-07-22
US60/489,330 2003-07-22
US50168703P 2003-09-10 2003-09-10
US60/501,687 2003-09-10

Publications (1)

Publication Number Publication Date
KR20060063903A true KR20060063903A (ko) 2006-06-12

Family

ID=34107798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067001364A Ceased KR20060063903A (ko) 2003-07-22 2004-07-22 유기 반도체의 적층법

Country Status (5)

Country Link
US (2) US7105462B2 (https=)
EP (1) EP1647063A2 (https=)
JP (1) JP2006528430A (https=)
KR (1) KR20060063903A (https=)
WO (1) WO2005011016A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0515175D0 (en) * 2005-07-25 2005-08-31 Plastic Logic Ltd Flexible resistive touch screen
JP2007067390A (ja) * 2005-08-05 2007-03-15 Sony Corp 半導体装置の製造方法および半導体装置の製造装置
JP4892894B2 (ja) * 2005-08-31 2012-03-07 株式会社島津製作所 光または放射線検出ユニットの製造方法、およびその製造方法で製造された光または放射線検出ユニット
JP4857669B2 (ja) * 2005-09-02 2012-01-18 大日本印刷株式会社 有機トランジスタ及びその作製方法並びに有機トランジスタシート
JP4831406B2 (ja) 2006-01-10 2011-12-07 ソニー株式会社 半導体装置の製造方法
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
GB0611032D0 (en) * 2006-06-05 2006-07-12 Plastic Logic Ltd Multi-touch active display keyboard
US7976045B2 (en) * 2006-09-21 2011-07-12 Felt Racing, Llc Bicycle front fork assembly
US7571920B2 (en) * 2006-09-21 2009-08-11 Felt Racing, Llc Bicycle front fork assembly
JP2008103680A (ja) * 2006-09-22 2008-05-01 Konica Minolta Holdings Inc ドナーシートの製造方法、ドナーシート、及び有機薄膜トランジスタの製造方法
JP5181515B2 (ja) * 2007-04-12 2013-04-10 ソニー株式会社 パターン形成方法および電子素子の製造方法
GB2453766A (en) * 2007-10-18 2009-04-22 Novalia Ltd Method of fabricating an electronic device
AU2012216352B2 (en) 2012-08-22 2015-02-12 Woodside Energy Technologies Pty Ltd Modular LNG production facility
US9583426B2 (en) 2014-11-05 2017-02-28 Invensas Corporation Multi-layer substrates suitable for interconnection between circuit modules
US10283492B2 (en) 2015-06-23 2019-05-07 Invensas Corporation Laminated interposers and packages with embedded trace interconnects
US9852994B2 (en) 2015-12-14 2017-12-26 Invensas Corporation Embedded vialess bridges

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6197663B1 (en) 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
US6335263B1 (en) * 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
US6852355B2 (en) 2001-03-01 2005-02-08 E. I. Du Pont De Nemours And Company Thermal imaging processes and products of electroactive organic material
JP2002260854A (ja) * 2001-03-02 2002-09-13 Fuji Photo Film Co Ltd 転写材料及び有機薄膜素子の製造方法
EP1237207B1 (en) 2001-03-02 2012-01-04 FUJIFILM Corporation Method for producing organic thin film device
US6485884B2 (en) 2001-04-27 2002-11-26 3M Innovative Properties Company Method for patterning oriented materials for organic electronic displays and devices
JP3812935B2 (ja) 2001-10-22 2006-08-23 シャープ株式会社 液晶表示装置
JP2003187972A (ja) * 2001-12-20 2003-07-04 Dainippon Printing Co Ltd 有機el素子の製造方法および有機el転写体と被転写体
JP4360801B2 (ja) * 2001-12-25 2009-11-11 シャープ株式会社 トランジスタおよびそれを用いた表示装置
US6852996B2 (en) * 2002-09-25 2005-02-08 Stmicroelectronics, Inc. Organic semiconductor sensor device
US6918982B2 (en) * 2002-12-09 2005-07-19 International Business Machines Corporation System and method of transfer printing an organic semiconductor
US7141893B2 (en) * 2005-03-30 2006-11-28 Motorola, Inc. Highly available power distribution system

Also Published As

Publication number Publication date
US20070004229A1 (en) 2007-01-04
US20050035374A1 (en) 2005-02-17
WO2005011016A3 (en) 2005-03-03
WO2005011016A2 (en) 2005-02-03
JP2006528430A (ja) 2006-12-14
EP1647063A2 (en) 2006-04-19
US7105462B2 (en) 2006-09-12

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Patent event date: 20060120

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