KR20060063183A - 반도체 소자 및 이의 제조 방법 - Google Patents
반도체 소자 및 이의 제조 방법 Download PDFInfo
- Publication number
- KR20060063183A KR20060063183A KR1020040102282A KR20040102282A KR20060063183A KR 20060063183 A KR20060063183 A KR 20060063183A KR 1020040102282 A KR1020040102282 A KR 1020040102282A KR 20040102282 A KR20040102282 A KR 20040102282A KR 20060063183 A KR20060063183 A KR 20060063183A
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- South Korea
- Prior art keywords
- layer
- silicon
- single crystal
- substrate
- crystal germanium
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 102
- 239000010703 silicon Substances 0.000 claims abstract description 102
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 78
- 239000013078 crystal Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims description 19
- 230000007547 defect Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 130
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 229910003855 HfAlO Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
Abstract
Description
Claims (11)
- 실리콘 기판;상기 실리콘 기판상에 형성된 단결정 게르마늄층; 및상기 단결정 게르마늄층 상에 형성된 실리콘층을 포함하는 반도체 기판.
- 청구항 1에 있어서,상기 단결정 게르마늄층은 상기 실리콘 기판과 결자 결함을 발생하지 않을 두께로 형성하는 반도체 기판.
- 청구항 2에 있어서,상기 단결정 게르마늄층은 0.01 내지 15㎚ 두께로 형성된 반도체 기판.
- 청구항 1에 있어서,상기 실리콘층은 1 내지 3㎚ 두께로 형성된 반도체 기판.
- 청구항 1 내지 청구항 4중 어느 한 항에 따른 기판의 실리콘층 상에 형성된 게이트 전극; 및상기 게이트 전극 양측의 상기 기판 내에 형성된 정션부를 포함하는 반도체 소자.
- 청구항 5에 있어서,상기 기판에 형성된 소자 분리막을 더 포함하는 반도체 소자.
- 실리콘 기판 상에 단결정 게르마늄층을 형성하는 단계;상기 단결정 게르마늄층 상에 실리콘층을 형성하는 단계;상기 실리콘층, 상기 게르마늄층 및 상기 실리콘 기판의 일부를 식각하여 소자 분리막을 형성하는 단계;전체 구조상에 게이트 절연막 및 게이트 도전막을 순차적으로 형성한 후, 이를 패터닝 하여 게이트 전극을 형성하는 단계; 및상기 게이트 전극 양측에 정션부를 형성하는 반도체 소자의 제조 방법.
- 청구항 7에 있어서, 상기 소자 분리막을 형성하는 단계 후,적어도 한번의 세정공정을 통해 상기 실리콘층의 일부를 제거하는 단계를 더 포함하는 반도체 소자의 제조 방법.
- 청구항 8에 있어서, 상기 세정공정은,섭씨 70 내지 120도로 가열된 H2SO4 + H2O2 용액에 상기 실리콘 기판을 5 내지 15분간 세정하는 제 1 세정 공정; 및DHF용액을 이용한 제 2 세정공정을 실시하는 반도체 소자의 제조 방법.
- 청구항 7에 있어서,상기 게이트 절연막 및 상기 게이트 도전막은 섭씨 300 내지 700도에서 증착하는 반도체 소자의 제조 방법.
- 청구항 7에 있어서, 상기 정션부를 형성하는 단계는,소정의 이온주입공정을 통해 상기 게이트 전극 양측에 소정의 도판트를 주입하되, 상기 실리콘층 표면이 비정질화되도록 하는 단계; 및섭시 350 내지 650도에서 저온 솔리드 성장 공정을 실시하여 상기 비정질화 된 층을 재결정화 하고, 상기 도판트를 활성화 하는 단계를 포함하는 반도체 소자의 제조 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040102282A KR101131418B1 (ko) | 2004-12-07 | 2004-12-07 | 반도체 소자 및 이의 제조 방법 |
TW094142988A TWI420591B (zh) | 2004-12-07 | 2005-12-06 | 半導體基板,半導體裝置及其製造方法 |
US11/297,504 US7391098B2 (en) | 2004-12-07 | 2005-12-07 | Semiconductor substrate, semiconductor device and method of manufacturing the same |
CNB2005101279751A CN100511704C (zh) | 2004-12-07 | 2005-12-07 | 半导体衬底、半导体装置和其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040102282A KR101131418B1 (ko) | 2004-12-07 | 2004-12-07 | 반도체 소자 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060063183A true KR20060063183A (ko) | 2006-06-12 |
KR101131418B1 KR101131418B1 (ko) | 2012-04-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040102282A KR101131418B1 (ko) | 2004-12-07 | 2004-12-07 | 반도체 소자 및 이의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7391098B2 (ko) |
KR (1) | KR101131418B1 (ko) |
CN (1) | CN100511704C (ko) |
TW (1) | TWI420591B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7544584B2 (en) | 2006-02-16 | 2009-06-09 | Micron Technology, Inc. | Localized compressive strained semiconductor |
US7485544B2 (en) * | 2006-08-02 | 2009-02-03 | Micron Technology, Inc. | Strained semiconductor, devices and systems and methods of formation |
US8962447B2 (en) * | 2006-08-03 | 2015-02-24 | Micron Technology, Inc. | Bonded strained semiconductor with a desired surface orientation and conductance direction |
US7749879B2 (en) * | 2006-08-03 | 2010-07-06 | Micron Technology, Inc. | ALD of silicon films on germanium |
JP4916247B2 (ja) * | 2006-08-08 | 2012-04-11 | トヨタ自動車株式会社 | 炭化珪素半導体装置及びその製造方法 |
US7968960B2 (en) | 2006-08-18 | 2011-06-28 | Micron Technology, Inc. | Methods of forming strained semiconductor channels |
CN103426926B (zh) * | 2012-05-14 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法、pmos晶体管及其形成方法 |
EP3671813A1 (en) * | 2018-12-21 | 2020-06-24 | IMEC vzw | Si-passivated ge gate stack |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019882A (en) * | 1989-05-15 | 1991-05-28 | International Business Machines Corporation | Germanium channel silicon MOSFET |
US6723621B1 (en) * | 1997-06-30 | 2004-04-20 | International Business Machines Corporation | Abrupt delta-like doping in Si and SiGe films by UHV-CVD |
US6607948B1 (en) * | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
ATE394794T1 (de) | 1999-03-12 | 2008-05-15 | Ibm | Ge kanal-heterostruktur mit hoher geschwindigkeit für feldeffektanordnungen |
US6455330B1 (en) * | 2002-01-28 | 2002-09-24 | Taiwan Semiconductor Manufacturing Company | Methods to create high-k dielectric gate electrodes with backside cleaning |
JP4413580B2 (ja) * | 2003-11-04 | 2010-02-10 | 株式会社東芝 | 素子形成用基板の製造方法 |
US7244958B2 (en) * | 2004-06-24 | 2007-07-17 | International Business Machines Corporation | Integration of strained Ge into advanced CMOS technology |
-
2004
- 2004-12-07 KR KR1020040102282A patent/KR101131418B1/ko active IP Right Grant
-
2005
- 2005-12-06 TW TW094142988A patent/TWI420591B/zh not_active IP Right Cessation
- 2005-12-07 US US11/297,504 patent/US7391098B2/en active Active
- 2005-12-07 CN CNB2005101279751A patent/CN100511704C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101131418B1 (ko) | 2012-04-03 |
CN100511704C (zh) | 2009-07-08 |
TW200629410A (en) | 2006-08-16 |
TWI420591B (zh) | 2013-12-21 |
US20060118915A1 (en) | 2006-06-08 |
US7391098B2 (en) | 2008-06-24 |
CN1801495A (zh) | 2006-07-12 |
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