KR20040067019A - 반도체소자의 살리사이드 형성방법 - Google Patents
반도체소자의 살리사이드 형성방법 Download PDFInfo
- Publication number
- KR20040067019A KR20040067019A KR1020030003958A KR20030003958A KR20040067019A KR 20040067019 A KR20040067019 A KR 20040067019A KR 1020030003958 A KR1020030003958 A KR 1020030003958A KR 20030003958 A KR20030003958 A KR 20030003958A KR 20040067019 A KR20040067019 A KR 20040067019A
- Authority
- KR
- South Korea
- Prior art keywords
- salicide
- region
- oxide film
- forming
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 125000006850 spacer group Chemical group 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
- H01L29/66507—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide providing different silicide thicknesses on the gate and on source or drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823443—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
- 실리콘기판의 비살리사이드 영역과 살리사이드영역의 각각에 두꺼운 두께를 가진 제1게이트산화막과 제1게이트산화막보다 얇은 두께를 가진 제2게이트산화막을 형성하는 단계;상기 전체 구조의 상면에 도전층과 질화막계열의 하드마스크층을 형성한후 상기 도전층, 하드마스크층 및 제1게이트산화막과 제2산화막을 선택적으로 제거하여 비살리사이드영역과 살리사이드영역 각각에 게이트전극을 형성함과 동시에 상기 살리사이드영역의 활성영역을 드러나게 하는 단계;상기 하드마스크층부분을 제외한 전체 구조의 상면에 산화막을 형성하는 단계;상기 게이트전극측면에 스페이서를 형성함과 동시에 상기 살리사이드영역의 활성영역을 드러나게 하는 단계;상기 비살리사이드영역과 살리사이드영역의 게이트전극상면에 잔류하는 하드마스크층부분을 제거하는 단계; 및상기 비살리사이드영역과 살리사이드영역의 게이트전극상면과 살리사이드영역의 활성영역표면에 살리사이드막을 형성하는 단계;를 포함하여 구성되는 것을 특징으로하는 반도체소자의 살리사이드 형성방법.
- 제1항에 있어서, 상기 하드마스크층과 도전층의 식각은 1차 및 2차 식각에의해 진행하는 것을 특징으로하는 반도체소자의 살리사이드 형성방법.
- 제2항에 있어서, 상기 2차로 도전층 식각시에, Cl2/HBr/He-O2/Ar 등의 활성화된 플라즈마를 이용하여 식각을 진행하는 것을 특징으로하는 반도체소자의 살리사이드 형성방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030003958A KR100955921B1 (ko) | 2003-01-21 | 2003-01-21 | 반도체소자의 살리사이드 형성방법 |
TW092135665A TWI323917B (en) | 2003-01-21 | 2003-12-16 | Method for forming salicide in semiconductor device |
US10/740,136 US7262103B2 (en) | 2003-01-21 | 2003-12-18 | Method for forming a salicide in semiconductor device |
US11/782,073 US7537998B2 (en) | 2003-01-21 | 2007-07-24 | Method for forming salicide in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030003958A KR100955921B1 (ko) | 2003-01-21 | 2003-01-21 | 반도체소자의 살리사이드 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040067019A true KR20040067019A (ko) | 2004-07-30 |
KR100955921B1 KR100955921B1 (ko) | 2010-05-03 |
Family
ID=37356615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030003958A KR100955921B1 (ko) | 2003-01-21 | 2003-01-21 | 반도체소자의 살리사이드 형성방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100955921B1 (ko) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100240682B1 (ko) * | 1997-12-10 | 2000-01-15 | 김영환 | 반도체장치의 제조방법 |
KR100280525B1 (ko) * | 1998-12-11 | 2001-03-02 | 김영환 | 반도체소자의 제조방법 |
KR20010038087A (ko) * | 1999-10-21 | 2001-05-15 | 박종섭 | 반도체 소자의 제조방법 |
JP2002353330A (ja) | 2001-05-25 | 2002-12-06 | Denso Corp | 半導体装置及びその製造方法 |
-
2003
- 2003-01-21 KR KR1020030003958A patent/KR100955921B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100955921B1 (ko) | 2010-05-03 |
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