KR20040007626A - 플라즈마 처리 장치 - Google Patents
플라즈마 처리 장치 Download PDFInfo
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- KR20040007626A KR20040007626A KR10-2003-7015657A KR20037015657A KR20040007626A KR 20040007626 A KR20040007626 A KR 20040007626A KR 20037015657 A KR20037015657 A KR 20037015657A KR 20040007626 A KR20040007626 A KR 20040007626A
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- plasma
- processing apparatus
- plasma processing
- chamber
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- 238000012545 processing Methods 0.000 title claims abstract description 132
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 26
- 238000009832 plasma treatment Methods 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000000806 elastomer Substances 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 238000007562 laser obscuration time method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 103
- 235000012431 wafers Nutrition 0.000 description 94
- 238000005530 etching Methods 0.000 description 55
- 239000004065 semiconductor Substances 0.000 description 48
- 230000003446 memory effect Effects 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 229910019001 CoSi Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- -1 or the like Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (15)
- 플라즈마 처리 장치에 있어서,유전체 벽을 갖는 처리실과,상기 처리실내에 설치되고, 피처리체가 탑재된 탑재면을 갖는 탑재대와,상기 탑재대의 적어도 탑재면을 착탈 가능하게 덮는 것이 가능한 유전체 부재를 구비하며,상기 유전체 벽을 통해 상기 처리실내에 유도 플라즈마가 여기되도록 하는 것을 특징으로 하는플라즈마 처리 장치.
- 제 1 항에 있어서,상기 유전체 부재는 피처리체가 탑재된 탑재면을 갖고,상기 탑재면의 주위에는 피처리체를 안내하는 가이드 링이 형성되는 것을 특징으로 하는플라즈마 처리 장치.
- 제 3 항에 있어서,상기 가이드 링의 표면은 상기 피처리체의 처리면 보다 낮게 위치하도록 형성되는 것을 특징으로 하는플라즈마 처리 장치.
- 제 1 항 내지 제 3항중 어느 한 항에 있어서,상기 유전체 부재는 상기 탑재대의 상부에 씌우는 것이 가능한 오목부 형상인 것을 특징으로 하는플라즈마 처리 장치.
- 제 1 항 내지 제 4 항중 어느 한 항에 있어서,상기 유전체 부재는 서로 분리 가능한 탑재면부 및 가이드 링부로 구성되는 것을 특징으로 하는플라즈마 처리 장치.
- 제 1 항 내지 5 항중 어느 한 항에 있어서,상기 유전체 부재는 석영으로 구성되는 것을 특징으로 하는플라즈마 처리 장치.
- 플라즈마 처리 장치에 있어서,유전체 벽과,유전체 벽에 접속된 불소계 탄성 중합체 재료로 구성된 평탄형 개스킷을 갖는 처리실과,상기 처리실내에 설치되고 피처리체가 탑재된 탑재대를 구비하며,상기 유전체 벽을 통해 상기 처리실내에 유도 플라즈마가 여기되도록 하고, 상기 평탄형 개스킷은 양면에 적어도 일렬의 환상 돌기가 형성되는 것을 특징으로 하는플라즈마 처리 장치.
- 제 7 항에 있어서,상기 유전체 벽은 벨자형인 것을 특징으로 하는플라즈마 처리 장치.
- 처리실과,상기 처리실내에 설치되고 피처리체가 탑재된 탑재대와,상기 처리실에 설치되고 상기 처리실내에 경사져 상방으로 개구하는 복수의 가스 분출 구멍을 갖는 가스 도입 링을 구비하며,상기 처리실내에 유도 플라즈마가 여기되도록 하는 것을 특징으로 하는플라즈마 처리 장치.
- 제 9 항에 있어서,상기 가스 도입 링의 내측면은 상방향의 테이퍼 면이 되고, 상기 복수의 가스 분출 구멍은 각각 상기 테이퍼 면에 있어서 개구하는 것을 특징으로 하는플라즈마 처리 장치.
- 제 9 항 또는 제 10 항에 있어서,상기 복수의 가스 분출 구멍은 처리실내의 일점을 향하여 개구하는 것을 특징으로 하는기재된 플라즈마 처리 장치.
- 제 9 항 내지 제 11 항중 어느 한 항에 있어서,상기 처리실은 벨자형 유전체 벽을 갖고,상기 벨자형 유전체 벽을 통해 상기 처리실내에 유도 플라즈마가 여기되도록 하는 것을 특징으로 하는플라즈마 처리 장치.
- 유전체 벽을 갖는 처리실과, 상기 처리실내에 설치되고 피처리체가 탑재된 탑재면을 갖는 탑재대와, 상기 탑재대의 적어도 탑재면을 착탈 가능하게 덮는 것이 가능한 유전체 부재를 구비하며, 상기 유전체 벽을 통해 상기 처리실내에 유도 플라즈마가 여기되도록 하는 플라즈마 처리 장치를 사용하는 플라즈마 처리 방법에 있어서,상기 유전체 부재를 노출시킨 상태로, 소정 시간에 걸쳐 상기 처리실내에 플라즈마를 여기하는 초기화 공정을 포함하는 것을 특징으로 하는플라즈마 처리 방법.
- 제 13 항에 있어서,상기 초기화 공정은 다른 프로세스로의 이행시에 플라즈마 처리 장치의 설치시에 또는 플라즈마 처리 장치내에서의 파티클 발생시에 수행되는 것을 특징으로 하는플라즈마 처리 방법.
- 제 13 항 또는 제 14 항에 있어서,상기 초기화 공정은 상기 처리실내에 도입된 Ar 가스를 플라즈마화하여 실행되는 것을 특징으로 하는플라즈마 처리 방법.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00167329 | 2001-06-01 | ||
JP2001167329 | 2001-06-01 | ||
JPJP-P-2001-00388134 | 2001-12-20 | ||
JP2001388134 | 2001-12-20 | ||
JP2002138851 | 2002-05-14 | ||
JPJP-P-2002-00138851 | 2002-05-14 | ||
PCT/JP2002/005367 WO2002099863A1 (fr) | 2001-06-01 | 2002-05-31 | Dispositif de traitement de plasma |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057025005A Division KR100631384B1 (ko) | 2001-06-01 | 2002-05-31 | 플라즈마 처리 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20040007626A true KR20040007626A (ko) | 2004-01-24 |
KR100585437B1 KR100585437B1 (ko) | 2006-06-07 |
Family
ID=27346859
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020037015657A KR100585437B1 (ko) | 2001-06-01 | 2002-05-31 | 플라즈마 처리 장치 |
KR1020057025005A KR100631384B1 (ko) | 2001-06-01 | 2002-05-31 | 플라즈마 처리 장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020057025005A KR100631384B1 (ko) | 2001-06-01 | 2002-05-31 | 플라즈마 처리 장치 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20040144492A1 (ko) |
EP (1) | EP1401013B1 (ko) |
KR (2) | KR100585437B1 (ko) |
CN (2) | CN101866806B (ko) |
WO (1) | WO2002099863A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100832925B1 (ko) * | 2004-03-18 | 2008-05-27 | 도쿄엘렉트론가부시키가이샤 | 반송기구의 반송 어긋남 산출 방법 및 반도체 처리 장치 |
Families Citing this family (8)
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US20050050708A1 (en) * | 2003-09-04 | 2005-03-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded fastener apparatus and method for preventing particle contamination |
DE102007016029A1 (de) * | 2007-03-30 | 2008-10-02 | Sig Technology Ag | Haltevorrichtung für eine CVD- oder PVD-Beschichtungsanlage |
KR100963287B1 (ko) * | 2008-02-22 | 2010-06-11 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
JP5697571B2 (ja) * | 2011-10-06 | 2015-04-08 | 株式会社東芝 | テンプレートの製造装置及びテンプレートの製造方法 |
US10115573B2 (en) | 2014-10-14 | 2018-10-30 | Applied Materials, Inc. | Apparatus for high compressive stress film deposition to improve kit life |
CN114007850A (zh) | 2019-07-01 | 2022-02-01 | 美国圣戈班性能塑料公司 | 型材连接件 |
EP4072832A4 (en) * | 2019-12-12 | 2024-01-31 | Saint-Gobain Performance Plastics Corporation | DEVICE FOR STERILIZED WELDING |
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US6399507B1 (en) * | 1999-09-22 | 2002-06-04 | Applied Materials, Inc. | Stable plasma process for etching of films |
JP3567855B2 (ja) * | 2000-01-20 | 2004-09-22 | 住友電気工業株式会社 | 半導体製造装置用ウェハ保持体 |
JP2002057207A (ja) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
JP4402860B2 (ja) * | 2001-03-28 | 2010-01-20 | 忠弘 大見 | プラズマ処理装置 |
JP4032971B2 (ja) * | 2001-04-13 | 2008-01-16 | 住友電気工業株式会社 | セラミックス接合体、基板保持構造体および基板処理装置 |
KR20030001695A (ko) * | 2001-06-26 | 2003-01-08 | 삼성전자 주식회사 | 고밀도 플라즈마 화학기상증착 챔버의 세정장치 및 그 방법 |
US20030068898A1 (en) * | 2001-10-10 | 2003-04-10 | Chun-Hung Lee | Dry etching method for manufacturing processes of semiconductor devices |
US6635584B2 (en) * | 2001-12-28 | 2003-10-21 | Texas Instruments Incorporated | Versatile system for forming uniform wafer surfaces |
US6992011B2 (en) * | 2003-01-15 | 2006-01-31 | Tokyo Electron Limited | Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma |
-
2002
- 2002-05-31 KR KR1020037015657A patent/KR100585437B1/ko active IP Right Grant
- 2002-05-31 KR KR1020057025005A patent/KR100631384B1/ko active IP Right Grant
- 2002-05-31 US US10/479,349 patent/US20040144492A1/en not_active Abandoned
- 2002-05-31 CN CN2010101584990A patent/CN101866806B/zh not_active Expired - Lifetime
- 2002-05-31 CN CN028110161A patent/CN1582487B/zh not_active Expired - Lifetime
- 2002-05-31 WO PCT/JP2002/005367 patent/WO2002099863A1/ja active Application Filing
- 2002-05-31 EP EP02730839A patent/EP1401013B1/en not_active Expired - Lifetime
-
2009
- 2009-09-01 US US12/551,869 patent/US20090314435A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100832925B1 (ko) * | 2004-03-18 | 2008-05-27 | 도쿄엘렉트론가부시키가이샤 | 반송기구의 반송 어긋남 산출 방법 및 반도체 처리 장치 |
US7406360B2 (en) | 2004-03-18 | 2008-07-29 | Tokyo Elctron Limited | Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment |
Also Published As
Publication number | Publication date |
---|---|
EP1401013A1 (en) | 2004-03-24 |
CN1582487B (zh) | 2010-05-26 |
CN101866806A (zh) | 2010-10-20 |
KR100631384B1 (ko) | 2006-10-09 |
KR20060003910A (ko) | 2006-01-11 |
US20040144492A1 (en) | 2004-07-29 |
EP1401013A4 (en) | 2006-10-11 |
US20090314435A1 (en) | 2009-12-24 |
CN1582487A (zh) | 2005-02-16 |
CN101866806B (zh) | 2012-04-25 |
KR100585437B1 (ko) | 2006-06-07 |
EP1401013B1 (en) | 2012-04-04 |
WO2002099863A1 (fr) | 2002-12-12 |
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