KR20030060139A - 스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법 - Google Patents

스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법 Download PDF

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Publication number
KR20030060139A
KR20030060139A KR1020020000674A KR20020000674A KR20030060139A KR 20030060139 A KR20030060139 A KR 20030060139A KR 1020020000674 A KR1020020000674 A KR 1020020000674A KR 20020000674 A KR20020000674 A KR 20020000674A KR 20030060139 A KR20030060139 A KR 20030060139A
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KR
South Korea
Prior art keywords
gate electrode
floating gate
gate
semiconductor substrate
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020000674A
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English (en)
Korean (ko)
Inventor
유현기
한정욱
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020020000674A priority Critical patent/KR20030060139A/ko
Priority to JP2002377015A priority patent/JP2003209195A/ja
Priority to US10/330,425 priority patent/US6914290B2/en
Publication of KR20030060139A publication Critical patent/KR20030060139A/ko
Priority to US11/083,305 priority patent/US20050162926A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020020000674A 2002-01-07 2002-01-07 스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법 Ceased KR20030060139A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020020000674A KR20030060139A (ko) 2002-01-07 2002-01-07 스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법
JP2002377015A JP2003209195A (ja) 2002-01-07 2002-12-26 不揮発性メモリ素子及びその製造方法
US10/330,425 US6914290B2 (en) 2002-01-07 2002-12-30 Split-gate type nonvolatile memory devices
US11/083,305 US20050162926A1 (en) 2002-01-07 2005-03-18 Split-gate type nonvolatile memory devices and methods for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020000674A KR20030060139A (ko) 2002-01-07 2002-01-07 스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR20030060139A true KR20030060139A (ko) 2003-07-16

Family

ID=19718217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020000674A Ceased KR20030060139A (ko) 2002-01-07 2002-01-07 스플리트 게이트형 비휘발성 메모리 소자 및 그 제조방법

Country Status (3)

Country Link
US (2) US6914290B2 (enExample)
JP (1) JP2003209195A (enExample)
KR (1) KR20030060139A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100667911B1 (ko) * 2005-12-26 2007-01-11 매그나칩 반도체 유한회사 비휘발성 기억 소자 및 그 제조방법
KR100718253B1 (ko) * 2005-08-17 2007-05-16 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
KR20190059200A (ko) * 2017-11-22 2019-05-30 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Soi 구조들을 사용하는 임베디드 메모리 및 방법들
CN119922914A (zh) * 2023-10-31 2025-05-02 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456541B1 (ko) * 2002-01-04 2004-11-09 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
TWI220316B (en) * 2003-05-22 2004-08-11 Powerchip Semiconductor Corp Flash memory cell, flash memory cell array and manufacturing method thereof
KR100518594B1 (ko) * 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
KR100546405B1 (ko) * 2004-03-18 2006-01-26 삼성전자주식회사 스플릿 게이트형 비휘발성 반도체 메모리 소자 및 그제조방법
JP2006032950A (ja) * 2004-07-12 2006-02-02 Samsung Electronics Co Ltd メモリ素子及びその形成方法
KR20060097884A (ko) * 2005-03-07 2006-09-18 삼성전자주식회사 스플리트 게이트형 비휘발성 메모리 소자 및 그 형성 방법
US7547944B2 (en) * 2006-03-30 2009-06-16 Catalyst Semiconductor, Inc. Scalable electrically eraseable and programmable memory (EEPROM) cell array
US20090003074A1 (en) * 2006-03-30 2009-01-01 Catalyst Semiconductor, Inc. Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array
KR100725375B1 (ko) * 2006-05-11 2007-06-07 삼성전자주식회사 비휘발성 메모리 집적 회로 장치 및 그 제조 방법
KR100843141B1 (ko) 2006-05-19 2008-07-02 삼성전자주식회사 비휘발성 메모리 집적 회로 장치 및 그 제조 방법
US8139408B2 (en) * 2006-09-05 2012-03-20 Semiconductor Components Industries, L.L.C. Scalable electrically eraseable and programmable memory
US7528436B2 (en) * 2006-09-05 2009-05-05 Catalyst Semiconductor, Inc. Scalable electrically eraseable and programmable memory
US8750041B2 (en) 2006-09-05 2014-06-10 Semiconductor Components Industries, Llc Scalable electrically erasable and programmable memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
WO2009144911A1 (ja) * 2008-05-27 2009-12-03 パナソニック株式会社 光ディスク装置、フォーカスエラー信号調整方法、プログラムおよび集積回路
KR20120007708A (ko) * 2010-07-15 2012-01-25 주식회사 하이닉스반도체 반도체 소자 및 그 형성방법
US8711636B2 (en) * 2011-05-13 2014-04-29 Silicon Storage Technology, Inc. Method of operating a split gate flash memory cell with coupling gate
CN104979383B (zh) * 2014-04-03 2018-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
CN108257965A (zh) * 2016-12-29 2018-07-06 无锡华润上华科技有限公司 闪存存储结构及其制造方法
CN110739312B (zh) * 2018-07-19 2021-05-14 合肥晶合集成电路股份有限公司 分栅式非易失性存储器及其制备方法
US10651183B1 (en) * 2018-12-14 2020-05-12 United Microelectronics Corp. Manufacturing method of semiconductor device
CN110568053A (zh) * 2019-08-12 2019-12-13 浙江大学 一种基于场效应管传感结构的非接触式细胞膜电位传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107166A (ja) * 1996-09-30 1998-04-24 Sanyo Electric Co Ltd 不揮発性半導体メモリ及びその製法
US5812452A (en) * 1997-06-30 1998-09-22 Winbond Memory Laboratory Electrically byte-selectable and byte-alterable memory arrays
KR20000021378A (ko) * 1998-09-28 2000-04-25 김영환 스플릿 게이트형 플래쉬 메모리 셀의 제조 방법
US6284601B1 (en) * 1997-06-30 2001-09-04 Winbond Memory Laboratory Method for fabricating electrically selectable and alterable memory cells

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045488A (en) 1990-01-22 1991-09-03 Silicon Storage Technology, Inc. Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
US5675167A (en) * 1994-11-24 1997-10-07 Nippondenso Co., Ltd. Enhancement-type semiconductor having reduced leakage current
US5936883A (en) 1996-03-29 1999-08-10 Sanyo Electric Co., Ltd. Split gate type transistor memory device
TW425660B (en) * 1997-12-12 2001-03-11 Mosel Vitelic Inc Method of forming uniform dielectric layer between two conductive layers in integrated circuit
KR20010004990A (ko) * 1999-06-30 2001-01-15 김영환 플래쉬 이이피롬 셀 및 그 제조 방법
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
KR100542394B1 (ko) * 2003-09-08 2006-01-11 주식회사 하이닉스반도체 플래쉬 메모리 소자의 게이트전극 형성방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107166A (ja) * 1996-09-30 1998-04-24 Sanyo Electric Co Ltd 不揮発性半導体メモリ及びその製法
US5812452A (en) * 1997-06-30 1998-09-22 Winbond Memory Laboratory Electrically byte-selectable and byte-alterable memory arrays
US6284601B1 (en) * 1997-06-30 2001-09-04 Winbond Memory Laboratory Method for fabricating electrically selectable and alterable memory cells
KR20000021378A (ko) * 1998-09-28 2000-04-25 김영환 스플릿 게이트형 플래쉬 메모리 셀의 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718253B1 (ko) * 2005-08-17 2007-05-16 삼성전자주식회사 불휘발성 메모리 장치의 제조 방법
KR100667911B1 (ko) * 2005-12-26 2007-01-11 매그나칩 반도체 유한회사 비휘발성 기억 소자 및 그 제조방법
KR20190059200A (ko) * 2017-11-22 2019-05-30 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Soi 구조들을 사용하는 임베디드 메모리 및 방법들
CN119922914A (zh) * 2023-10-31 2025-05-02 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法

Also Published As

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US20050162926A1 (en) 2005-07-28
JP2003209195A (ja) 2003-07-25
US6914290B2 (en) 2005-07-05
US20030127684A1 (en) 2003-07-10

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