KR20030006408A - X선 센서용 스위칭소자 및 그 제조방법 - Google Patents
X선 센서용 스위칭소자 및 그 제조방법 Download PDFInfo
- Publication number
- KR20030006408A KR20030006408A KR1020010042124A KR20010042124A KR20030006408A KR 20030006408 A KR20030006408 A KR 20030006408A KR 1020010042124 A KR1020010042124 A KR 1020010042124A KR 20010042124 A KR20010042124 A KR 20010042124A KR 20030006408 A KR20030006408 A KR 20030006408A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- tft
- protective insulating
- electrode
- ground wiring
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
- G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
- 투명기판(101) 위에 구성되는 TFT(112)와, 상기 TFT를 포함하여 덮는 제1보호절연막(108)과, 상기 제1보호절연막 위에 접지배선(102)과 연결되고 그 일부가 적어도 상기 TFT 영역을 차폐하도록 구성되는 용량전극(109a,109c)과, 상기 제1보호절연막 위에 형성된 상기 용량전극을 덮도록 구성되는 제2보호절연막(115)과, 상기 제2보호절연막 위에 상기 TFT의 한 단자(106b)와 연결되도록 구성되는 화소전극(107)을 포함하여 구비하는 것을 특징으로 하는 X선 센서용 스위칭소자.
- 제1항에 있어서,상기 접지배선(102)은 상기 제1보호절연막(108)의 하부에 구성되고 상기 제1보호절연막을 관통하는 콘택홀에 의하여 상기 접지배선과 연결되도록 구성되는 것을 특징으로 하는 X선 센서용 스위칭소자.
- 제1항에 있어서,상기 화소전극(107)은 상기 제1보호절연막(108) 및 제2보호절연막(115)을 관통하는 콘택홀을 통하여 상기 TFT의 한 단자(106b)와 연결되도록 구성되는 것을 특징으로 하는 X선 센서용 스위칭소자.
- 제1항에 있어서,상기 제1보호절연막(108) 및 제2보호절연막(115)은 무기절연막으로 구성되는 것을 특징으로 하는 X선 센서용 스위칭소자.
- 투명기판(101) 위에 TFT(112) 및 접지배선(102)을 형성하는 단계,상기 TFT 및 접지배선을 포함하여 덮는 제1보호절연막(108)을 형성하는 단계, 적어도 상기 접지배선부 위에 제1콘택홀을 형성하고 상기 접지배선과 연결되는 용량전극(109a,109c)을 상기 제1보호절연막 위에 패터닝하여 형성하는 단계,상기 용량전극이 패터닝되어 형성된 제1보호절연막 위에 제2보호절연막(115)을 형성하는 단계,상기 TFT의 한 단자부 위에 제2콘택홀을 형성하고 상기 TFT의 한 단자와 연결되는 화소전극(107)을 상기 제2보호절연막 위에 형성하는 단계를 포함하는 것을 특징으로 하는 X선 센서용 스위칭소자 제조방법.
- 제5항에 있어서,상기 제1콘택홀 형성 시에 상기 TFT의 한 단자의 일부가 동시에 노출되도록 콘택홀이 형성되고 상기 콘택홀과 상기 제2콘택홀을 통하여 상기 화소전극과 상기TFT의 한 단자가 접촉되도록 하는 것을 특징으로 하는 X선 센서용 스위칭소자 제조방법.
- 제5항에 있어서,상기 용량전극의 일부(109a)는 상기 TFT(112) 영역을 차폐하도록 구성되는 것을 특징으로 하는 X선 센서용 스위칭소자 제조방법.
- 제5항에 있어서,상기 제1보호절연막(108) 및 제2보호절연막(115)은 무기절연막으로 구성되는 것을 특징으로 하는 X선 센서용 스위칭소자 제조방법.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0042124A KR100448448B1 (ko) | 2001-07-12 | 2001-07-12 | X선 센서용 스위칭소자 및 그 제조방법 |
US09/988,359 US6806472B2 (en) | 2001-07-12 | 2001-11-19 | Switching device of an X-ray sensor and method for manufacturing the same |
FR0210136A FR2843488B1 (fr) | 2001-07-12 | 2002-08-09 | Dispositif de commutation pour un capteur a rayons x |
DE10237149A DE10237149B4 (de) | 2001-07-12 | 2002-08-13 | Schalt-Vorrichtung eines Röntgenstrahl-Sensors und Verfahren zum Herstellen derselben |
JP2002243882A JP3845605B2 (ja) | 2001-07-12 | 2002-08-23 | X線センサー用スイッチング素子およびその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0042124A KR100448448B1 (ko) | 2001-07-12 | 2001-07-12 | X선 센서용 스위칭소자 및 그 제조방법 |
FR0210136A FR2843488B1 (fr) | 2001-07-12 | 2002-08-09 | Dispositif de commutation pour un capteur a rayons x |
DE10237149A DE10237149B4 (de) | 2001-07-12 | 2002-08-13 | Schalt-Vorrichtung eines Röntgenstrahl-Sensors und Verfahren zum Herstellen derselben |
JP2002243882A JP3845605B2 (ja) | 2001-07-12 | 2002-08-23 | X線センサー用スイッチング素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030006408A true KR20030006408A (ko) | 2003-01-23 |
KR100448448B1 KR100448448B1 (ko) | 2004-09-13 |
Family
ID=32854350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0042124A KR100448448B1 (ko) | 2001-07-12 | 2001-07-12 | X선 센서용 스위칭소자 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6806472B2 (ko) |
JP (1) | JP3845605B2 (ko) |
KR (1) | KR100448448B1 (ko) |
DE (1) | DE10237149B4 (ko) |
FR (1) | FR2843488B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100701087B1 (ko) * | 2004-02-27 | 2007-03-29 | 비오이 하이디스 테크놀로지 주식회사 | 엑스-레이 검출기 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4456806B2 (ja) * | 2002-03-19 | 2010-04-28 | セイコーエプソン株式会社 | 液晶表示装置、電気光学装置とその製造方法、電子機器 |
JP4323827B2 (ja) * | 2003-02-14 | 2009-09-02 | キヤノン株式会社 | 固体撮像装置及び放射線撮像装置 |
US7242956B2 (en) | 2004-12-20 | 2007-07-10 | Motorola, Inc. | Rapid channel quality based power control for high speed channels |
KR100722094B1 (ko) | 2005-07-14 | 2007-05-25 | 삼성에스디아이 주식회사 | 반도체 장치 및 유기 발광 표시장치 |
US7524711B2 (en) * | 2005-10-20 | 2009-04-28 | Hannstar Display Corp. | Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof |
JP5280671B2 (ja) * | 2006-12-20 | 2013-09-04 | 富士フイルム株式会社 | 画像検出器および放射線検出システム |
US7638772B2 (en) * | 2007-02-28 | 2009-12-29 | Canon Kabushiki Kaisha | Imaging apparatus and radiation imaging system |
KR101218089B1 (ko) * | 2007-12-07 | 2013-01-18 | 엘지디스플레이 주식회사 | 디지털 엑스레이 디텍터 및 그 제조방법 |
JPWO2012032749A1 (ja) | 2010-09-09 | 2014-01-20 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法、表示装置 |
US8791419B2 (en) | 2010-12-15 | 2014-07-29 | Carestream Health, Inc. | High charge capacity pixel architecture, photoelectric conversion apparatus, radiation image pickup system and methods for same |
JP5978625B2 (ja) * | 2011-06-07 | 2016-08-24 | ソニー株式会社 | 放射線撮像装置、放射線撮像表示システムおよびトランジスタ |
KR102009801B1 (ko) * | 2012-11-27 | 2019-08-12 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 박막트랜지스터 어레이 기판 |
JP6126470B2 (ja) | 2013-06-12 | 2017-05-10 | ソニーセミコンダクタソリューションズ株式会社 | 放射線撮像装置および放射線撮像表示システム |
US9780140B2 (en) | 2013-08-07 | 2017-10-03 | Sharp Kabushiki Kaisha | X-ray image sensor substrate |
CN106663685A (zh) | 2014-06-06 | 2017-05-10 | 夏普株式会社 | 半导体装置及其制造方法 |
CN104979367B (zh) * | 2015-06-17 | 2019-01-25 | 京东方科技集团股份有限公司 | 探测器背板及其制作方法、x射线平板探测器、摄像系统 |
CN105575961B (zh) * | 2016-03-18 | 2019-10-11 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
CN105720063B (zh) | 2016-04-13 | 2019-02-15 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、传感器和探测设备 |
CN105789324B (zh) * | 2016-04-15 | 2019-05-03 | 京东方科技集团股份有限公司 | 传感器及其制造方法、电子设备 |
TWI625847B (zh) * | 2016-09-09 | 2018-06-01 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
CN108242462B (zh) * | 2018-01-12 | 2020-08-18 | 京东方科技集团股份有限公司 | 有机发光显示面板及其制备方法、显示装置 |
JP2019174963A (ja) * | 2018-03-27 | 2019-10-10 | 株式会社ジャパンディスプレイ | 指紋検出装置及び表示装置 |
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JPS613118A (ja) * | 1984-06-16 | 1986-01-09 | Canon Inc | トランジスタ基板 |
GB9414639D0 (en) * | 1994-07-20 | 1994-09-07 | Philips Electronics Uk Ltd | An image detector |
EP1255240B1 (en) * | 1997-02-17 | 2005-02-16 | Seiko Epson Corporation | Active matrix electroluminescent display with two TFTs and storage capacitor in each pixel |
US6541918B1 (en) * | 1998-03-12 | 2003-04-01 | Seiko Epson Corporation | Active-matrix emitting apparatus and fabrication method therefor |
KR100463337B1 (ko) * | 1998-09-16 | 2005-06-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이영상감지소자및그제조방법 |
TW522453B (en) * | 1999-09-17 | 2003-03-01 | Semiconductor Energy Lab | Display device |
KR100577410B1 (ko) * | 1999-11-30 | 2006-05-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
KR100630880B1 (ko) * | 1999-12-31 | 2006-10-02 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
KR100835970B1 (ko) * | 2001-03-12 | 2008-06-09 | 엘지디스플레이 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
-
2001
- 2001-07-12 KR KR10-2001-0042124A patent/KR100448448B1/ko active IP Right Grant
- 2001-11-19 US US09/988,359 patent/US6806472B2/en not_active Expired - Lifetime
-
2002
- 2002-08-09 FR FR0210136A patent/FR2843488B1/fr not_active Expired - Fee Related
- 2002-08-13 DE DE10237149A patent/DE10237149B4/de not_active Expired - Fee Related
- 2002-08-23 JP JP2002243882A patent/JP3845605B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100701087B1 (ko) * | 2004-02-27 | 2007-03-29 | 비오이 하이디스 테크놀로지 주식회사 | 엑스-레이 검출기 |
Also Published As
Publication number | Publication date |
---|---|
US20030010922A1 (en) | 2003-01-16 |
FR2843488B1 (fr) | 2005-10-21 |
US6806472B2 (en) | 2004-10-19 |
JP2004087604A (ja) | 2004-03-18 |
JP3845605B2 (ja) | 2006-11-15 |
DE10237149A1 (de) | 2004-03-04 |
FR2843488A1 (fr) | 2004-02-13 |
KR100448448B1 (ko) | 2004-09-13 |
DE10237149B4 (de) | 2012-05-24 |
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