CN110993695A - Gsd tft器件及其制作方法 - Google Patents
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Abstract
一种GSD TFT器件包含一基板,一遮光金属层设置于所述基板上,一缓冲层设置于所述遮光金属层和所述基板上,一有源层设置于所述缓冲层上,且所述有源层包含一导体化有源区,一栅极绝缘层设置于所述有源层和所述缓冲层上,且所述栅极绝缘层包含多个栅极绝缘开口,所述多个栅极绝缘开口的宽度小于所述导体化有源区的宽度,一第一栅极设置于所述遮光金属层和所述栅极绝缘层上,一第二栅极设置于所述栅极绝缘层上,一源极设置于所述遮光金属层、所述缓冲层、所述导体化有源区和所述栅极绝缘层上,一漏极设置于所述栅极绝缘层和所述导体化有源区上。
Description
【技术领域】
本揭示涉及显示技术领域,特别涉及一种GSD TFT器件及其制作方法。
【背景技术】
目前上闸极结构薄膜电晶体(Top-gate Thin Film Transistor,Top-gate TFT)的制程由于结构复杂,层数较多。每增加一道阵列制程,不仅增加了时间成本、物料成本,也同时降低良率。因此需减少制程,提出栅极、源极、漏极同层(Gate Source Drain oneLayer Thin Film Transistor,GSD one Layer TFT)的新制程。
虽然与Top-gate TFT制程差异较大,特别是有源层在制程中受到环境的挑战,GSD材料为低阻抗金属,一般是厚度在3000至6000埃的铜或其合金,无法干蚀刻。然而,在湿蚀刻时,金属蚀刻液与铟镓锌氧化物(Indium Gallium Zinc Oxide,IGZO)持续接触,IGZO的膜厚、阻抗等严重受损,导致源极/漏极与IGZO无法导通,从而TFT器件的功能无法达成。
基于以上,本发明主要提出了GSD one Layer TFT中源极/漏极与IGZO边触设计,从而保证GSD TFT新制程能够保证器件功能正常,且能实现氧化薄膜电晶体的量产化。
【发明内容】
为解决上述技术问题,以及栅极绝缘层开孔,即源极/漏极与有源层的搭接,其开孔长度大于导体化有源层的宽度,使得在湿蚀刻时,蚀刻液会破坏有源层,使得有源层阻抗增大且膜层缺失,从而造成TFT功能异常。
本发明提供一种GSD TFT器件及其制作方法。根据本发明的一实施例,揭示一种GSD TFT器件,其特征在于,包含一基板,一遮光金属层,所述遮光金属层设置于所述基板上,一缓冲层,所述缓冲层设置于所述遮光金属层和所述基板上,一有源层,所述有源层设置于所述缓冲层上,且所述有源层包含一导体化有源区,一栅极绝缘层,所述栅极绝缘层设置于所述有源层和所述缓冲层上,且所述栅极绝缘层包含多个栅极绝缘开口,所述多个栅极绝缘开口的宽度小于所述导体化有源区的宽度,一第一栅极,所述第一栅极设置于所述遮光金属层和所述栅极绝缘层上,一第二栅极,所述第二栅极设置于所述栅极绝缘层上,一源极,所述源极设置于所述遮光金属层、所述缓冲层、所述导体化有源区和所述栅极绝缘层上,一漏极,所述漏极设置于所述栅极绝缘层和所述导体化有源区上。
根据本发明的其中一个方面,所述GSD TFT器件包含一塑胶层,所述塑胶层设置于所述缓冲层、所述有源层、所述导体化有源区、所述栅极绝缘层、所述第一栅极、所述第二栅极、所述源极和所述漏极。
根据本发明的其中一个方面,所述GSD TFT器件包含一彩色滤光片,所述彩色滤光片设置于所述塑胶层上。
根据本发明的其中一个方面,所述GSD TFT器件包含一有机材料层,所述有机材料层设置于所述塑胶层和所述彩色滤光片上。
根据本发明的其中一个方面,所述GSD TFT器件包含一阳极电极,所述阳极电极设置于所述源极、所述塑胶层和所述有机材料层上。
根据本发明的其中一个方面,所述GSD TFT器件包含一像素界定层,所述像素界定层设置于所述有机材料层和所述阳极电极上。
根据本发明的其中一个方面,所述GSD TFT器件包含一透明电容,所述透明电容设置于所述基板上,且其材质为氧化铟鎴或氧化銦鎵鋅,增加开口率。
根据本发明的其中一个方面,所述GSD TFT器件包含一非透明电容,所述非透明电容设置于所述基板上,且其材质为遮光金属,降低开口率。
根据本发明的其中一个方面,所述像素界定层110其为疏水性,其材质为光阻胶,和非疏水性,其材质为氧化硅、氮化硅或氮氧化硅。
根据本发明的一实施例,揭示一种GSD TFT器件的制作方法,其特征在于,包含提供一基板,设置一遮光金属层于所述基板上,设置一缓冲层于所述遮光金属层和所述基板上,沉积一有源层于所述缓冲层上,并导体化部份所述有源层形成一导体化有源区,沉积一栅极绝缘层于所述有源层和所述缓冲层上。
进一步,蚀刻所述栅极绝缘层形成多个栅极绝缘开口,所多个述栅极绝缘开口宽度小于所述导体化有源区的宽度,沉积一金属层于所述遮光金属层、所述栅极绝缘层和所述导体化有源区上,蚀刻所述金属层形成一第一栅极、一第二栅极、一源极和一漏极,蚀刻所述栅极绝缘层,并导体化所述栅极绝缘层周围部份的所述有源层。
根据上述发明内容,本发明提出了一种GSD TFT器件及其制作方法,由于所述栅极绝缘层开口的宽度小于导体化的有源区的宽度,使得GSD金属层在进行湿蚀刻时,虽然部份的IGZO被破坏,但栅极绝缘层开口附近的IGZO依然存在,从而达到源极/漏极与IGZO形成边触。
因此,本发明主要提出了GSD one Layer TFT中源极/漏极与IGZO边触设计,从而保证GSD TFT新制程能够保证器件功能正常,且与Top-gate TFT制程相比,节省一次金属成膜、光刻、蚀刻及介电质层,大大节省成本,实现氧化薄膜电晶体的量产化。
【附图说明】
图1为本发明的GSD TFT器件的结构示意图;
图2为本发明的栅极绝缘层蚀刻示意图;
图3为本发明图2的A区域的俯视图;
图4(a)至图4(b)为本发明的GSD制作流程图;
图5为本发明图4(b)的B区域的俯视图。
【具体实施方式】
在一实施例中,如图1所示,一种GSD TFT器件包含一基板10,一遮光金属层20,所述遮光金属层20设置于所述基板10上,一缓冲层30,所述缓冲层30设置于所述遮光金属层20和所述基板10上,一有源层40,所述有源层40设置于所述缓冲层30上,且所述有源层40包含一导体化有源区41,一栅极绝缘层50,所述栅极绝缘层50设置于所述有源层40和所述缓冲层30上,且所述栅极绝缘层50包含多个栅极绝缘开口51。所述多个栅极绝缘开口51的宽度小于所述导体化有源区41的宽度。一第一栅极61,所述第一栅极61设置于所述遮光金属层20和所述栅极绝缘层50上,一第二栅极62,所述第二栅极62设置于所述栅极绝缘层50上,一源极63,所述源极63设置于所述遮光金属层20、所述缓冲层30、所述导体化有源区41和所述栅极绝缘层50上,一漏极64,所述漏极64设置于所述栅极绝缘层50上和所述导体化有源区41上。
在一实施例中,如图1所示,所述GSD TFT器件包含一塑胶层70,所述塑胶层70设置于所述缓冲层30、所述有源层40、所述导体化有源区41、所述栅极绝缘层50、所述第一栅极61、所述第二栅极62、所述源极63和所述漏极64。
在一实施例中,如图1所示,所述GSD TFT器件包含一彩色滤光片90,所述彩色滤光片90设置于所述塑胶层70上。
在一实施例中,如图1所示,所述GSD TFT器件包含一有机材料层80,所述有机材料层80设置于所述塑胶层70和所述彩色滤光片90上。
在一实施例中,如图1所示,所述GSD TFT器件包含一阳极电极100,所述阳极电极100设置于所述源极63、所述塑胶层70和所述有机材料层80上。
在一实施例中,如图1所示,所述GSD TFT器件包含一像素界定层110,所述像素界定层110设置于所述有机材料层80和所述阳极电极100上。
在一实施例中,如图1所示,所述GSD TFT器件包含一透明电容120,所述透明电容120设置于所述基板10上,且其材质为氧化铟鎴或氧化銦鎵鋅,增加开口率。
在一实施例中,如图1所示,所述GSD TFT器件包含一非透明电容120,所述非透明电容120设置于所述基板10上,且其材质为遮光金属,降低开口率。
在一实施例中,所述像素界定层110其为疏水性,其材质为光阻胶,和非疏水性,其材质为氧化硅、氮化硅或氮氧化硅。
在一实施例中,如图2所示,揭示一种GSD TFT器件的制作方法包含提供一基板10,设置一遮光金属层20于所述基板10上,设置一缓冲层30于所述遮光金属层20和所述基板10上,沉积一有源40层于所述缓冲层30上,并导体化部份所述有源层形成一导体化有源区41,沉积一栅极绝缘层50于所述有源层40和所述缓冲层30上。
进一步,如图3所示,蚀刻所述栅极绝缘层50形成多个栅极绝缘开口51,所述多个栅极绝缘开口51的宽度小于所述导体化有源区41的宽度。
进一步,如图4(a)所示,沉积一金属层60于所述遮光金属层20、所述栅极绝缘层50、所述导体化有源区41上。
进一步,如图4(b)所示,湿蚀刻所述金属层60形成一第一栅极61、一第二栅极62、一源极63和一漏极64,同时部分的IGZO被破坏,但所述多个栅极绝缘开口51周围仍存在部分的IGZO。
进一步,如图5所示,进行自我对准,完成一具有奈米线信道之场效晶体管组件,干蚀刻所述多个栅极绝缘开口51周围的栅极绝缘层50,并导体化所述多个栅极绝缘开口51周围仍存在部分的所述有源层40。
所述多个栅极绝缘开口51存在部分导体化的IGZO,实现源极/漏极与IGZO形成边触,是本发明的关键技术,此外,使作为透明电容一极的IGZO阻抗降低。
以上仅是本揭示的优选实施方式,应当指出,对于本领域普通技术人员,在不脱离本揭示原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本揭示的保护范围。
Claims (10)
1.一种GSD TFT器件,其特征在于,包含:
一基板;
一遮光金属层,所述遮光金属层设置于所述基板上;
一缓冲层,所述缓冲层设置于所述遮光金属层和所述基板上;
一有源层,所述有源层设置于所述缓冲层上,且所述有源层包含一导体化有源区;
一栅极绝缘层,所述栅极绝缘层设置于所述有源层和所述缓冲层上,且所述栅极绝缘层包含多个栅极绝缘开口;
所述多个栅极绝缘开口的宽度小于所述导体化有源区的宽度;
一第一栅极,所述第一栅极设置于所述遮光金属层和所述栅极绝缘层上;
一第二栅极,所述第二栅极设置于所述栅极绝缘层上;
一源极,所述源极设置于所述遮光金属层、所述缓冲层、所述导体化有源区和所述栅极绝缘层上;
一漏极,所述漏极设置于所述栅极绝缘层和所述导体化有源区上。
2.如权利要求1所述的GSD TFT器件,其特征在于,包含一塑胶层,所述塑胶层设置于所述缓冲层、所述有源层、所述导体化有源区、所述栅极绝缘层、所述第一栅极、所述第二栅极、所述源极和所述漏极。
3.如权利要求2所述的GSD TFT器件,其特征在于,包含一彩色滤光片,所述彩色滤光片设置于所述塑胶层上。
4.如权利要求3所述的GSD TFT器件,其特征在于,包含一有机材料层,所述有机材料层设置于所述塑胶层和所述彩色滤光片上。
5.如权利要求4所述的GSD TFT器件,其特征在于,包含一阳极电极,所述阳极电极设置于所述源极、所述塑胶层和所述有机材料层上。
6.如权利要求5所述的GSD TFT器件,其特征在于,包含一像素界定层,所述像素界定层设置于所述有机材料层和所述阳极电极上。
7.如权利要求1所述的GSD TFT器件,其特征在于,包含一透明电容,所述透明电容设置于所述基板和所述缓冲层上,且其材质为氧化铟鎴或氧化銦鎵鋅。
8.如权利要求1所述的GSD TFT器件,其特征在于,包含一非透明电容,所述非透明电容设置于所述基板和所述缓冲层上,且其材质为遮光金属。
9.如权利要求6所述的GSD TFT器件,其特征在于,所述像素界定层其为疏水性和非疏水性。
10.一种GSD TFT器件的制作方法,其特征在于,包含:
提供一基板;
设置一遮光金属层于所述基板上;
设置一缓冲层于所述遮光金属层和所述基板上;
沉积一有源层于所述缓冲层上,并导体化部份所述有源层形成一导体化有源区;
沉积一栅极绝缘层于所述有源层和所述缓冲层上;
蚀刻所述栅极绝缘层形成多个栅极绝缘开口;
所多个述栅极绝缘开口宽度小于所述导体化有源区的宽度;
沉积一金属层于所述遮光金属层、所述栅极绝缘层和所述导体化有源区上;
蚀刻所述金属层形成一第一栅极、一第二栅极、一源极和一漏极;
蚀刻所述栅极绝缘层,并导体化所述栅极绝缘层周围部份的所述有源层。
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Denomination of invention: GSD TFT devices and their fabrication methods Effective date of registration: 20231117 Granted publication date: 20230124 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch Pledgor: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY Co.,Ltd. Registration number: Y2023980066244 |