KR20020092362A - 질소함유 탄탈룸 또는 니오브 분말의 제조방법 및 고체전해 캐패시터 - Google Patents

질소함유 탄탈룸 또는 니오브 분말의 제조방법 및 고체전해 캐패시터 Download PDF

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Publication number
KR20020092362A
KR20020092362A KR1020027010026A KR20027010026A KR20020092362A KR 20020092362 A KR20020092362 A KR 20020092362A KR 1020027010026 A KR1020027010026 A KR 1020027010026A KR 20027010026 A KR20027010026 A KR 20027010026A KR 20020092362 A KR20020092362 A KR 20020092362A
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KR
South Korea
Prior art keywords
nitrogen
tantalum
niobium
metal powder
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020027010026A
Other languages
English (en)
Korean (ko)
Inventor
오다유키오
이즈미도모오
노구치요시카즈
Original Assignee
카보트 슈퍼 메탈 가부시키가이샤
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18555954&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20020092362(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 카보트 슈퍼 메탈 가부시키가이샤 filed Critical 카보트 슈퍼 메탈 가부시키가이샤
Publication of KR20020092362A publication Critical patent/KR20020092362A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Conductive Materials (AREA)
KR1020027010026A 2000-02-08 2000-09-11 질소함유 탄탈룸 또는 니오브 분말의 제조방법 및 고체전해 캐패시터 Ceased KR20020092362A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000031029A JP4049964B2 (ja) 2000-02-08 2000-02-08 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサー
JPJP-P-2000-00031029 2000-02-08
PCT/JP2000/006183 WO2001059166A1 (en) 2000-02-08 2000-09-11 Production of nitrogen-containing tantalum or niobium powder and solid electrolytic capacitor

Publications (1)

Publication Number Publication Date
KR20020092362A true KR20020092362A (ko) 2002-12-11

Family

ID=18555954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027010026A Ceased KR20020092362A (ko) 2000-02-08 2000-09-11 질소함유 탄탈룸 또는 니오브 분말의 제조방법 및 고체전해 캐패시터

Country Status (13)

Country Link
EP (1) EP1255872B1 (enExample)
JP (1) JP4049964B2 (enExample)
KR (1) KR20020092362A (enExample)
CN (1) CN1180101C (enExample)
AT (1) ATE245712T1 (enExample)
AU (1) AU2000268772A1 (enExample)
BR (2) BR0017498B1 (enExample)
CZ (1) CZ301396B6 (enExample)
DE (1) DE60004108T2 (enExample)
IL (1) IL150851A (enExample)
PL (1) PL357016A1 (enExample)
PT (1) PT1255872E (enExample)
WO (1) WO2001059166A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022066722A1 (en) * 2020-09-23 2022-03-31 Avx Corporation Solid electrolytic capacitor containing a deoxidized anode

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4187953B2 (ja) * 2001-08-15 2008-11-26 キャボットスーパーメタル株式会社 窒素含有金属粉末の製造方法
BRPI0206094B1 (pt) * 2001-10-02 2016-10-25 Showa Denko Kk pó de nióbio, corpo sinterizado do mesmo, produto quimicamente modificado do mesmo e capacitor utilizando os mesmos
BR0204587A (pt) * 2002-11-04 2004-06-29 Cbmm Sa Processo de produção de pó de nióbio e/ou de tântalo de elevada área superficial
US7157073B2 (en) 2003-05-02 2007-01-02 Reading Alloys, Inc. Production of high-purity niobium monoxide and capacitor production therefrom
EP1690617B1 (en) 2003-11-05 2018-01-10 Ishihara Chemical Co., Ltd. Process for production of ultrafine alloy particles
CN100450673C (zh) 2004-04-15 2009-01-14 杰富意矿物股份有限公司 钽粉末及使用有它的固体电解电容器
US7431751B2 (en) * 2004-09-29 2008-10-07 H.C. Starck Inc. Magnesium removal from magnesium reduced metal powders
ATE482042T1 (de) * 2004-10-06 2010-10-15 Showa Denko Kk Niobpulver, niobgranulat, niobsinterkörper und kondensator und herstellungsverfahren dafür
US20060269436A1 (en) * 2005-05-31 2006-11-30 Cabot Corporation Process for heat treating metal powder and products made from the same
JP4879040B2 (ja) * 2006-03-31 2012-02-15 三洋電機株式会社 固体電解コンデンサ
GB2450669B (en) * 2006-05-05 2012-03-21 Cabot Corp Tantalam powder and methods of manufacturing same
JP2009275289A (ja) * 2009-07-10 2009-11-26 Cabot Supermetal Kk 窒素含有金属粉末の製造方法
JP5680866B2 (ja) * 2010-02-24 2015-03-04 グローバルアドバンストメタルジャパン株式会社 窒素含有金属粉末の製造方法
JP6367356B2 (ja) * 2013-12-10 2018-08-01 ニンシア オリエント タンタル インダストリー カンパニー、 リミテッド 高窒素含有量を有するコンデンサグレードのタンタル粉末の調製方法、その方法により調製したコンデンサグレードのタンタル粉末、並びにタンタル粉末から調製したアノード及びコンデンサ
JP5898297B2 (ja) * 2014-11-20 2016-04-06 グローバルアドバンストメタルジャパン株式会社 窒素含有金属粉末の製造方法
EP3486338B1 (en) * 2016-07-13 2023-06-21 Ningxia Orient Tantalum Industry Co., Ltd. Flaky tantalum powder and method for preparing the same
US20180144874A1 (en) 2016-10-21 2018-05-24 Global Advanced Metals, Usa, Inc. Tantalum Powder, Anode, And Capacitor Including Same, And Manufacturing Methods Thereof
CN111017889A (zh) * 2019-11-20 2020-04-17 中色（宁夏）东方集团有限公司 一种氮化铌的制备方法
JP7752359B2 (ja) * 2020-08-27 2025-10-10 パナソニックＩｐマネジメント株式会社 電解コンデンサ用電極箔、電解コンデンサ、電解コンデンサ用電極箔の製造方法および電解コンデンサの製造方法
CN114192791B (zh) * 2021-12-15 2023-10-24 宁夏东方钽业股份有限公司 采用碱土金属还原氧化钽生产电容器用钽粉的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684399A (en) * 1986-03-04 1987-08-04 Cabot Corporation Tantalum powder process
DE69126973T2 (de) * 1990-05-17 1998-02-12 Cabot Corp Herstellungsverfahren von tantalpulver mit grosser spezifischer oberfläche und geringer metallischer verunreinigung
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
DE69516556T2 (de) * 1994-01-26 2000-09-07 H.C. Starck, Inc. Verfahren zum Nitrieren von Tantalpulver
BR9807239A (pt) 1997-02-19 2000-04-25 Starck H C Gmbh Co Kg Pós de tântalo, processos para a sua preparação, bem como anodos de sinterização preparados a partir deles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022066722A1 (en) * 2020-09-23 2022-03-31 Avx Corporation Solid electrolytic capacitor containing a deoxidized anode

Also Published As

Publication number Publication date
BR0016331B1 (pt) 2008-11-18
DE60004108T2 (de) 2004-06-03
EP1255872A1 (en) 2002-11-13
WO2001059166A1 (en) 2001-08-16
IL150851A (en) 2009-09-22
CN1433485A (zh) 2003-07-30
AU2000268772A1 (en) 2001-08-20
CZ20022680A3 (cs) 2003-04-16
BR0017498B1 (pt) 2014-09-30
CN1180101C (zh) 2004-12-15
PL357016A1 (en) 2004-07-12
JP2001223141A (ja) 2001-08-17
EP1255872B1 (en) 2003-07-23
ATE245712T1 (de) 2003-08-15
PT1255872E (pt) 2004-01-30
JP4049964B2 (ja) 2008-02-20
CZ301396B6 (cs) 2010-02-17
BR0016331A (pt) 2002-12-24
DE60004108D1 (de) 2003-08-28

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