ATE245712T1 - Herstellung von stickstoff enthaltendes tantal- oder niobiumpulver und festelektrolytkondensator - Google Patents
Herstellung von stickstoff enthaltendes tantal- oder niobiumpulver und festelektrolytkondensatorInfo
- Publication number
- ATE245712T1 ATE245712T1 AT00957081T AT00957081T ATE245712T1 AT E245712 T1 ATE245712 T1 AT E245712T1 AT 00957081 T AT00957081 T AT 00957081T AT 00957081 T AT00957081 T AT 00957081T AT E245712 T1 ATE245712 T1 AT E245712T1
- Authority
- AT
- Austria
- Prior art keywords
- nitrogen
- tantalum
- metallic powder
- metal
- electrolytic capacitor
- Prior art date
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract 8
- 229910052757 nitrogen Inorganic materials 0.000 title abstract 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052715 tantalum Inorganic materials 0.000 title abstract 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title abstract 3
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000007787 solid Substances 0.000 title abstract 2
- 239000000843 powder Substances 0.000 abstract 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 229910052758 niobium Inorganic materials 0.000 abstract 2
- 239000010955 niobium Substances 0.000 abstract 2
- 230000002035 prolonged effect Effects 0.000 abstract 2
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000006104 solid solution Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000031029A JP4049964B2 (ja) | 2000-02-08 | 2000-02-08 | 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサー |
| PCT/JP2000/006183 WO2001059166A1 (en) | 2000-02-08 | 2000-09-11 | Production of nitrogen-containing tantalum or niobium powder and solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE245712T1 true ATE245712T1 (de) | 2003-08-15 |
Family
ID=18555954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00957081T ATE245712T1 (de) | 2000-02-08 | 2000-09-11 | Herstellung von stickstoff enthaltendes tantal- oder niobiumpulver und festelektrolytkondensator |
Country Status (13)
| Country | Link |
|---|---|
| EP (1) | EP1255872B1 (de) |
| JP (1) | JP4049964B2 (de) |
| KR (1) | KR20020092362A (de) |
| CN (1) | CN1180101C (de) |
| AT (1) | ATE245712T1 (de) |
| AU (1) | AU2000268772A1 (de) |
| BR (2) | BR0016331B1 (de) |
| CZ (1) | CZ301396B6 (de) |
| DE (1) | DE60004108T2 (de) |
| IL (1) | IL150851A (de) |
| PL (1) | PL357016A1 (de) |
| PT (1) | PT1255872E (de) |
| WO (1) | WO2001059166A1 (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4187953B2 (ja) | 2001-08-15 | 2008-11-26 | キャボットスーパーメタル株式会社 | 窒素含有金属粉末の製造方法 |
| EP1434243B1 (de) * | 2001-10-02 | 2010-01-27 | Showa Denko K.K. | Niobpulver, dessen sintermasse, dessen chemisch modifiziertes produkt und dieselben verwendender kondensator |
| BR0204587A (pt) * | 2002-11-04 | 2004-06-29 | Cbmm Sa | Processo de produção de pó de nióbio e/ou de tântalo de elevada área superficial |
| US7157073B2 (en) | 2003-05-02 | 2007-01-02 | Reading Alloys, Inc. | Production of high-purity niobium monoxide and capacitor production therefrom |
| EP1690617B1 (de) | 2003-11-05 | 2018-01-10 | Ishihara Chemical Co., Ltd. | Verfahren zur herstellung von legierten nanopartikeln |
| DE602005011773D1 (de) | 2004-04-15 | 2009-01-29 | Jfe Mineral Co Ltd | Tantalpulver und dieses verwendender festelektrolytkondensator |
| US7431751B2 (en) * | 2004-09-29 | 2008-10-07 | H.C. Starck Inc. | Magnesium removal from magnesium reduced metal powders |
| JP4042995B2 (ja) * | 2004-10-06 | 2008-02-06 | 昭和電工株式会社 | ニオブ粉、ニオブ造粒物、ニオブ焼結体及びコンデンサ並びにそれらの製造方法 |
| US20060269436A1 (en) * | 2005-05-31 | 2006-11-30 | Cabot Corporation | Process for heat treating metal powder and products made from the same |
| JP4879040B2 (ja) | 2006-03-31 | 2012-02-15 | 三洋電機株式会社 | 固体電解コンデンサ |
| WO2007130483A2 (en) * | 2006-05-05 | 2007-11-15 | Cabot Corporation | Tantalum powder with smooth surface and methods of manufacturing same |
| JP2009275289A (ja) * | 2009-07-10 | 2009-11-26 | Cabot Supermetal Kk | 窒素含有金属粉末の製造方法 |
| JP5680866B2 (ja) * | 2010-02-24 | 2015-03-04 | グローバルアドバンストメタルジャパン株式会社 | 窒素含有金属粉末の製造方法 |
| WO2015085476A1 (zh) * | 2013-12-10 | 2015-06-18 | 宁夏东方钽业股份有限公司 | 一种高氮含量电容器级钽粉末的制备方法、由该方法制备的电容器级钽粉以及由该钽粉制备的阳极和电容器 |
| JP5898297B2 (ja) * | 2014-11-20 | 2016-04-06 | グローバルアドバンストメタルジャパン株式会社 | 窒素含有金属粉末の製造方法 |
| RU2734851C2 (ru) * | 2016-07-13 | 2020-10-23 | Нинся Ориэнт Танталум Индастри Ко.,Лтд. | Хлопьевидный порошкообразный тантал и способ его получения |
| US20180144874A1 (en) | 2016-10-21 | 2018-05-24 | Global Advanced Metals, Usa, Inc. | Tantalum Powder, Anode, And Capacitor Including Same, And Manufacturing Methods Thereof |
| CN111017889A (zh) * | 2019-11-20 | 2020-04-17 | 中色（宁夏）东方集团有限公司 | 一种氮化铌的制备方法 |
| WO2022044932A1 (ja) * | 2020-08-27 | 2022-03-03 | パナソニックＩｐマネジメント株式会社 | 電解コンデンサ用電極箔、電解コンデンサ、電解コンデンサ用電極箔の製造方法および電解コンデンサの製造方法 |
| US12100561B2 (en) * | 2020-09-23 | 2024-09-24 | KYOCERA AVX Components Corporation | Solid electrolytic capacitor containing a deoxidized anode |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4684399A (en) * | 1986-03-04 | 1987-08-04 | Cabot Corporation | Tantalum powder process |
| AU7979391A (en) * | 1990-05-17 | 1991-12-10 | Cabot Corporation | Method of producing high surface area low metal impurity tantalum powder |
| US5448447A (en) * | 1993-04-26 | 1995-09-05 | Cabot Corporation | Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom |
| EP0665302B1 (de) * | 1994-01-26 | 2000-05-03 | H.C. Starck, INC. | Verfahren zum Nitrieren von Tantalpulver |
| PT964936E (pt) | 1997-02-19 | 2002-03-28 | Starck H C Gmbh | Po de tantalo seu processo de producao e anodos sinterizados produzidos a partir deste po |
-
2000
- 2000-02-08 JP JP2000031029A patent/JP4049964B2/ja not_active Expired - Fee Related
- 2000-09-11 AU AU2000268772A patent/AU2000268772A1/en not_active Abandoned
- 2000-09-11 BR BRPI0016331-7A patent/BR0016331B1/pt not_active IP Right Cessation
- 2000-09-11 WO PCT/JP2000/006183 patent/WO2001059166A1/en not_active Application Discontinuation
- 2000-09-11 CN CNB008188203A patent/CN1180101C/zh not_active Expired - Lifetime
- 2000-09-11 DE DE60004108T patent/DE60004108T2/de not_active Revoked
- 2000-09-11 AT AT00957081T patent/ATE245712T1/de not_active IP Right Cessation
- 2000-09-11 BR BRPI0017498-0A patent/BR0017498B1/pt active IP Right Grant
- 2000-09-11 EP EP00957081A patent/EP1255872B1/de not_active Revoked
- 2000-09-11 PL PL00357016A patent/PL357016A1/xx unknown
- 2000-09-11 KR KR1020027010026A patent/KR20020092362A/ko not_active Application Discontinuation
- 2000-09-11 CZ CZ20022680A patent/CZ301396B6/cs not_active IP Right Cessation
- 2000-09-11 PT PT00957081T patent/PT1255872E/pt unknown
-
2002
- 2002-07-22 IL IL150851A patent/IL150851A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| DE60004108T2 (de) | 2004-06-03 |
| EP1255872B1 (de) | 2003-07-23 |
| PT1255872E (pt) | 2004-01-30 |
| WO2001059166A1 (en) | 2001-08-16 |
| JP2001223141A (ja) | 2001-08-17 |
| JP4049964B2 (ja) | 2008-02-20 |
| CN1433485A (zh) | 2003-07-30 |
| IL150851A (en) | 2009-09-22 |
| BR0017498B1 (pt) | 2014-09-30 |
| BR0016331A (pt) | 2002-12-24 |
| DE60004108D1 (de) | 2003-08-28 |
| BR0016331B1 (pt) | 2008-11-18 |
| PL357016A1 (en) | 2004-07-12 |
| EP1255872A1 (de) | 2002-11-13 |
| AU2000268772A1 (en) | 2001-08-20 |
| KR20020092362A (ko) | 2002-12-11 |
| CN1180101C (zh) | 2004-12-15 |
| CZ20022680A3 (cs) | 2003-04-16 |
| CZ301396B6 (cs) | 2010-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
Ref document number: 1255872 Country of ref document: EP |
|
| REN | Ceased due to non-payment of the annual fee | ||
| RZN | Patent revoked |