KR20020091337A - 기판 표면의 입자성 오염물 제거 방법 및 그 제거장치 - Google Patents
기판 표면의 입자성 오염물 제거 방법 및 그 제거장치 Download PDFInfo
- Publication number
- KR20020091337A KR20020091337A KR1020010029888A KR20010029888A KR20020091337A KR 20020091337 A KR20020091337 A KR 20020091337A KR 1020010029888 A KR1020010029888 A KR 1020010029888A KR 20010029888 A KR20010029888 A KR 20010029888A KR 20020091337 A KR20020091337 A KR 20020091337A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- particulate contaminants
- static electricity
- ions
- removing particulate
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (2)
- 기판(반도체용 실리콘웨이퍼 및 전도성 물질이 코팅된 기판)에 부착된 입자성 오염물을 제거하는 방법에 있어서,입자성 오염물이 부착된 상기 기판을 전기적으로 고립시키는 단계와;상기 기판에 이온 발생 장치를 통해 단일 이온화 기체를 공급하여 입자성 오염물과 기판이 동일 극성의 정전기를 형성토록 하여 기판을 대전시키는 단계와;상기 단계후 전기 공급 조절장치를 이용하여 유도된 정전 극성과 동일한 극성의 바이어스 전압을 상기 기판에 인가하여 상기 기판에 부착된 입자성 오염물을 탈착시켜 제거하는 단계와;상기 단계후 기판을 접지시켜 잔류 정전기를 제거하는 단계를 포함하여 이루어짐을 특징으로 하는 기판 표면의 입자성 오염물 제거 방법.
- 제1항에 있어서, 상기 기판을 접지시켜 정전기를 제거하는 단계는, 기판 접지와 동시에 상기 이온 발생 장치를 이용하여 + 이온과 - 이온이 일정 주기(100㎐)로 변화하도록 이온을 발생시켜 잔류 정전기를 완전히 제거하는 것을 특징으로 하는 기판 표면의 입자성 오염물 제거 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0029888A KR100421171B1 (ko) | 2001-05-30 | 2001-05-30 | 기판 표면의 입자성 오염물 제거 방법 및 그 제거장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0029888A KR100421171B1 (ko) | 2001-05-30 | 2001-05-30 | 기판 표면의 입자성 오염물 제거 방법 및 그 제거장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020091337A true KR20020091337A (ko) | 2002-12-06 |
KR100421171B1 KR100421171B1 (ko) | 2004-03-03 |
Family
ID=27707016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0029888A KR100421171B1 (ko) | 2001-05-30 | 2001-05-30 | 기판 표면의 입자성 오염물 제거 방법 및 그 제거장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100421171B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100763532B1 (ko) * | 2006-08-17 | 2007-10-05 | 삼성전자주식회사 | 웨이퍼 지지장치, 웨이퍼 노광 장치 및 웨이퍼 지지방법 |
KR20160028437A (ko) * | 2013-01-11 | 2016-03-11 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 오염물을 갖는 브러시 표면을 세정하기 위한 방법 및 디바이스 |
US11086238B2 (en) | 2017-06-29 | 2021-08-10 | Asml Netherlands B.V. | System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support |
US11376640B2 (en) | 2018-10-01 | 2022-07-05 | Tokyo Electron Limited | Apparatus and method to electrostatically remove foreign matter from substrate surfaces |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100266671B1 (ko) * | 1998-02-27 | 2000-10-02 | 김영환 | 반도체 플라즈마 에칭장비의 대전 이물질 제어방법 |
-
2001
- 2001-05-30 KR KR10-2001-0029888A patent/KR100421171B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100763532B1 (ko) * | 2006-08-17 | 2007-10-05 | 삼성전자주식회사 | 웨이퍼 지지장치, 웨이퍼 노광 장치 및 웨이퍼 지지방법 |
KR20160028437A (ko) * | 2013-01-11 | 2016-03-11 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 오염물을 갖는 브러시 표면을 세정하기 위한 방법 및 디바이스 |
US11086238B2 (en) | 2017-06-29 | 2021-08-10 | Asml Netherlands B.V. | System, a lithographic apparatus, and a method for reducing oxidation or removing oxide on a substrate support |
US11376640B2 (en) | 2018-10-01 | 2022-07-05 | Tokyo Electron Limited | Apparatus and method to electrostatically remove foreign matter from substrate surfaces |
Also Published As
Publication number | Publication date |
---|---|
KR100421171B1 (ko) | 2004-03-03 |
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