KR20020070104A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
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- KR20020070104A KR20020070104A KR1020020009416A KR20020009416A KR20020070104A KR 20020070104 A KR20020070104 A KR 20020070104A KR 1020020009416 A KR1020020009416 A KR 1020020009416A KR 20020009416 A KR20020009416 A KR 20020009416A KR 20020070104 A KR20020070104 A KR 20020070104A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 217
- 238000000034 method Methods 0.000 title claims description 85
- 150000004767 nitrides Chemical class 0.000 claims abstract description 153
- 230000003647 oxidation Effects 0.000 claims abstract description 53
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000001681 protective effect Effects 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 239000003963 antioxidant agent Substances 0.000 claims description 25
- 230000003078 antioxidant effect Effects 0.000 claims description 25
- 230000001590 oxidative effect Effects 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 18
- 230000003064 anti-oxidating effect Effects 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 abstract description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 46
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 22
- 239000010936 titanium Substances 0.000 abstract description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052719 titanium Inorganic materials 0.000 abstract description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 13
- 239000010931 gold Substances 0.000 abstract description 12
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052737 gold Inorganic materials 0.000 abstract description 10
- 229910052697 platinum Inorganic materials 0.000 abstract description 10
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 abstract description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- 238000001459 lithography Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000009413 insulation Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (28)
- 기판 상에 형성된 제 1 질화물반도체층과,상기 제 1 질화물반도체층 상에 형성된 제 2 질화물반도체층이 산화되어 이루어지는 절연산화층과,상기 절연산화층 상에 형성된 게이트전극을 구비하는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 제 1 질화물반도체층의 산화 속도는, 상기 제 2 질화물반도체층의 산화 속도보다 작은 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 제 1 질화물반도체층과 상기 제 2 질화물반도체층은 동일 재료로 구성되는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 제 1 질화물반도체층은 알루미늄을 함유하는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 기판과 상기 제 1 질화물반도체층 사이에 형성되며, 에너지갭이 상기 제 1 질화물반도체층보다 작은 제 3 질화물반도체로 이루어지는 능동층을 추가로 구비하는 것을 특징으로 하는 반도체장치.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 제 1 질화물반도체층과 상기 절연산화층 사이에 형성되며, 산화속도가 상기 제 2 질화물반도체층보다 작은 제 4 질화물반도체로 이루어지는 산화방지층을 추가로 구비하는 것을 특징으로 하는 반도체장치.
- 제 6 항에 있어서,상기 산화방지층은 질화알루미늄으로 이루어지는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 절연산화층과 상기 게이트전극 사이에 형성된 절연막을 추가로 구비하는 것을 특징으로 하는 반도체장치.
- 제 8 항에 있어서,상기 절연막은 실리콘산화막 또는 실리콘질화막으로 이루어지는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서,상기 제 1 질화물반도체층 상의 게이트 길이방향 쪽 영역에 형성된 소스드레인전극을 추가로 구비하며,상기 절연산화층은, 상기 게이트전극과 상기 소스드레인전극 사이의 적어도 한쪽에, 그 두께가 상기 게이트전극의 아래쪽 부분 두께보다 큰 후막부를 구비하는 것을 특징으로 하는 반도체장치.
- 기판 상에 제 1 질화물반도체층을 형성하는 제 1 공정과,상기 제 1 질화물반도체층 상에 제 2 질화물반도체층을 형성한 후, 형성한 제 2 질화물반도체층을 산화시킴으로써, 상기 제 2 질화물반도체층으로 이루어지는 절연산화층을 형성하는 제 2 공정과,상기 절연산화층 상에 게이트전극을 형성하는 제 3 공정과,상기 절연산화층의 게이트 길이방향 쪽 영역에 대하여 선택적으로 에칭을 실시하여 상기 절연산화층에 개구부를 형성하고, 형성한 개구부에 소스드레인전극을 형성하는 제 4 공정을 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항에 있어서,상기 제 1 질화물반도체층의 산화속도는, 상기 제 2 질화물반도체층의 산화속도보다 작은 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항에 있어서,상기 제 1 질화물반도체층과 상기 제 2 질화물반도체층은 동일 재료로 구성되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항에 있어서,상기 제 1 공전 전에,상기 기판 상에 에너지갭이 상기 제 1 질화물반도체층보다 작은 제 3 질화물반도체층으로 된 능동층을 형성하는 공정을 추가로 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항에 있어서,상기 제 1 공정과 제 2 공정 사이에,상기 제 1 질화물반도체층 상에 산화속도가 상기 제 2 질화물반도체층보다 작은 제 4 질화물반도체층으로 된 산화방지층을 형성하는 공정을 추가로 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 15 항에 있어서,상기 산화방지층은 알루미늄을 함유하는 것을 특징으로 하는 반도체장치의제조방법.
- 제 11 항에 있어서,상기 제 2 공정과 상기 제 3 공정 사이에,상기 절연산화층 상에 절연막을 형성하는 공정을 추가로 구비하며,상기 제 4 공정은 상기 절연막의 상기 소스드레인전극을 형성할 영역에 대해서도 개구부를 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 17 항에 있어서,상기 절연막은 실리콘산화막 또는 실리콘질화막으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항에 있어서,상기 제 2 공정은,상기 제 2 질화물반도체층의 적어도 상기 게이트전극을 형성할 영역에 상기 절연산화층을 형성하는 공정과,상기 게이트전극을 형성할 영역과 상기 소스드레인전극 중 드레인전극을 형성할 영역 사이의 영역을 선택적으로 산화시킴으로써, 상기 절연산화층에 그 두께가 상기 절연산화층보다 큰 후막부를 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 11 항 내지 제 19 항 중 어느 한 항에 있어서,상기 제 1 질화물반도체층은 알루미늄을 함유하는 것을 특징으로 하는 반도체장치의 제조방법.
- 기판 상에 제 1 질화물반도체층을 형성하는 제 1 공정과,상기 제 1 질화물반도체층 상에 제 2 질화물반도체층을 형성하는 제 2 공정과,상기 제 2 질화물반도체층 상의 옴 전극 형성영역에 산화보호막을 형성하는 제 3 공정과,상기 산화보호막을 마스크로 하여 상기 제 2 질화물반도체층을 산화시킴으로써, 상기 제 2 질화물반도체층의 상기 옴 전극 형성영역을 제외한 영역에 절연산화층을 형성하는 제 4 공정과,상기 산화보호막을 제거한 후, 상기 제 2 질화물반도체층의 상기 옴 전극 형성영역 상에 옴 전극을 형성하는 제 5 공정과,상기 절연산화층 상에 게이트전극을 선택적으로 형성하는 제 6 공정을 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항에 있어서,상기 산화보호막은 실리콘으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항에 있어서,상기 산화보호막은 절연막인 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항에 있어서,상기 제 2 공정과 상기 제 3 공정 사이에,상기 제 2 질화물반도체층 상에, 이 제 2 질화물반도체층의 소자형성영역을 피복하는 보호막을 형성하는 공정과,형성된 보호막을 마스크로 하여 상기 제 1 질화물반도체층 및 제 2 질화물반도체층을 산화시킴으로써, 상기 소자형성영역 주변부에 소자분리막을 형성하는 공정을 추가로 구비하며,상기 제 3 공정은 상기 산화보호막을 상기 보호막으로써 형성하는 공정을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항 내지 제 24 항 중 어느 한 항에 있어서,상기 제 1 공정 전에,상기 기판 상에 에너지갭이 상기 제 1 질화물반도체층보다 작은 제 3 질화물반도체로 된 능동층을 형성하는 공정을 추가로 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항 내지 제 24 항 중 어느 한 항에 있어서,상기 제 1 공정과 상기 제 2 공정 사이에,상기 제 1 질화물반도체층 상에 산화속도가 상기 제 2 질화물반도체층보다 작은 제 4 질화물반도체로 된 산화방지층을 형성하는 공정을 추가로 구비하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 26 항에 있어서,상기 산화방지층은 알루미늄을 함유하는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 21 항 내지 제 24 항 중 어느 한 항에 있어서,상기 제 1 질화물반도체층은 알루미늄을 함유하는 것을 특징으로 하는 반도체장치의 제조방법.
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