JPS55138238A - Forming method of insulation film on gallium nitride - Google Patents

Forming method of insulation film on gallium nitride

Info

Publication number
JPS55138238A
JPS55138238A JP4564279A JP4564279A JPS55138238A JP S55138238 A JPS55138238 A JP S55138238A JP 4564279 A JP4564279 A JP 4564279A JP 4564279 A JP4564279 A JP 4564279A JP S55138238 A JPS55138238 A JP S55138238A
Authority
JP
Japan
Prior art keywords
gas
pipe
insulation film
heated
heating part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4564279A
Other languages
Japanese (ja)
Inventor
Yoshimasa Oki
Yukio Toyoda
Atsuyuki Kobayashi
Masafumi Hashimoto
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4564279A priority Critical patent/JPS55138238A/en
Publication of JPS55138238A publication Critical patent/JPS55138238A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Abstract

PURPOSE:To obtain a good-quality film well matched in structure viewed from a crystallographic standpoint by a method wherein, when an insulation film is formed on GaN, it is heated to 650-1,100 deg.C in an atmosphere of O2 gas and H2O steam, or the one containing at least one of them. CONSTITUTION:A furnace core pipe 2 having gas inlet 3 on its one end is placed in an electric heating furnace 1, which can be set at any required temperature by a temperature adjusting meter. The inside of pipe 2 is replaced with N2 gas. Next, the pipe 2 is heated to 650-1,100 deg.C, and GaN crystal 4 is inserted on the front side of the uniform heating part, and after it is preheated for about 1min, it is moved to the uniform heating part. At the same time, while amount of gas flow is adjusted to about 2l/min by N2 gas flow meter 9, N2 gas is caused to bubble in a bubbler 6 filled with distilled water, inside a constant temperature tank 7. By using valve system 5, N2 gas containing H2O is drawn into the pipe 2, and negative oxide film is produced on the surface of crystal 4. By this, good quality film insoluble in acids and alkalis is obtained.
JP4564279A 1979-04-13 1979-04-13 Forming method of insulation film on gallium nitride Pending JPS55138238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4564279A JPS55138238A (en) 1979-04-13 1979-04-13 Forming method of insulation film on gallium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4564279A JPS55138238A (en) 1979-04-13 1979-04-13 Forming method of insulation film on gallium nitride

Publications (1)

Publication Number Publication Date
JPS55138238A true JPS55138238A (en) 1980-10-28

Family

ID=12725015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4564279A Pending JPS55138238A (en) 1979-04-13 1979-04-13 Forming method of insulation film on gallium nitride

Country Status (1)

Country Link
JP (1) JPS55138238A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057564A (en) * 1997-07-30 2000-05-02 Kabushiki Kaisha Toshiba Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode
JP2002329863A (en) * 2001-02-27 2002-11-15 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2003347316A (en) * 2002-05-30 2003-12-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2004056146A (en) * 2002-07-17 2004-02-19 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device
JP2006054249A (en) * 2004-08-10 2006-02-23 Sony Corp Steam generator and oxidizing device
US7307292B2 (en) 2001-02-27 2007-12-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2009016848A (en) * 2008-07-14 2009-01-22 Panasonic Corp Semiconductor device, and manufacturing method thereof
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device
JP2020004911A (en) * 2018-06-29 2020-01-09 日亜化学工業株式会社 Manufacturing method for semiconductor element

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057564A (en) * 1997-07-30 2000-05-02 Kabushiki Kaisha Toshiba Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode
JP2002329863A (en) * 2001-02-27 2002-11-15 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
US7307292B2 (en) 2001-02-27 2007-12-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
KR100859060B1 (en) * 2001-02-27 2008-09-17 마츠시타 덴끼 산교 가부시키가이샤 Semiconductor device and method for fabricating the same
JP2003347316A (en) * 2002-05-30 2003-12-05 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2004056146A (en) * 2002-07-17 2004-02-19 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device
JP4546051B2 (en) * 2002-07-17 2010-09-15 パナソニック株式会社 Manufacturing method of semiconductor device
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device
JP2006054249A (en) * 2004-08-10 2006-02-23 Sony Corp Steam generator and oxidizing device
JP2009016848A (en) * 2008-07-14 2009-01-22 Panasonic Corp Semiconductor device, and manufacturing method thereof
JP2020004911A (en) * 2018-06-29 2020-01-09 日亜化学工業株式会社 Manufacturing method for semiconductor element

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