KR20020059172A - 다결정실리콘의 제조방법과 그 장치 - Google Patents
다결정실리콘의 제조방법과 그 장치 Download PDFInfo
- Publication number
- KR20020059172A KR20020059172A KR1020010000237A KR20010000237A KR20020059172A KR 20020059172 A KR20020059172 A KR 20020059172A KR 1020010000237 A KR1020010000237 A KR 1020010000237A KR 20010000237 A KR20010000237 A KR 20010000237A KR 20020059172 A KR20020059172 A KR 20020059172A
- Authority
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- South Korea
- Prior art keywords
- silicon
- reaction gas
- gas
- reaction
- nozzle
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (9)
- 유동층 반응기에서 반응가스를 공급하면서 실리콘 입자를 유동시켜서 다결정실리콘을 제조하는 방법에 있어서, 유동층 반응기의 반응가스 공급수단의 표면에 염화수소를 함유하는 에칭가스를 주입하는 것을 특징으로 하는 다결정실리콘의 제조 방법.
- 제 1 항에 있어서, 상기 에칭가스는 염화수소에 추가적으로 비활성가스를 혼합하여 사용하는 것임을 특징으로 하는 다결정실리콘의 제조방법.
- 제 2 항에 있어서, 상기 염화수소는 폐가스로부터 분리되어 회수된 것임을 특징으로 하는 다결정실리콘의 제조방법.
- 제 2 항에 있어서, 상기 비활성가스는 수소, 질소, 아르곤, 헬륨 중에서 선택된 1 종 이상을 사용하는 것임을 특징으로 하는 다결정실리콘의 제조방법.
- 가스분산기를 가지는 유동가스 공급수단, 반응가스 노즐을 가지는 반응가스 공급수단이 구비된 유동층 반응기를 포함하는 다결정실리콘의 제조 장치에 있어서, 상기 반응가스 공급수단인 반응가스 노즐과 표면에 에칭가스공급을 위한 에칭가스 노즐이 동축의 2중관 형태로 장착된 것을 특징으로 하는 다결정실리콘 제조장치.
- 제 5 항에 있어서, 상기 반응가스 노즐과 에칭가스 노즐의 재질이 석영, 실리카, 질화규소, 표면이 산화처리된 실리콘, 및 상기 성분이 코팅된 탄소 및 탄화규소 중에서 선택된 것임을 특징으로 하는 다결정실리콘 제조장치.
- 제 5 항에 있어서, 반응가스 노즐의 출구 및 에칭가스 노즐의 출구의 높이가 10 ∼ 30 mm 범위에 서로 동일 높이 또는 다른 높이로 구성되어 있는 것임을 특징으로 하는 다결정실리콘 제조장치.
- 제 5 항에 있어서, 반응가스 노즐과 에칭가스 노즐의 이중관 사이의 공간을 충전제로 충전되어 있는 것임을 특징으로 하는 다결정실리콘 제조장치.
- 제 8 항에 있어서, 상기 충전제로 실리콘(Si), 석영, 산화규소(SiO2), 질화규소(Si3N4) 및 상기 성분이 코팅된 탄화규소(SiC) 및 탄소(C) 중에서 선택된 것임을 특징으로 하는 다결정실리콘 제조장치.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0000237A KR100411180B1 (ko) | 2001-01-03 | 2001-01-03 | 다결정실리콘의 제조방법과 그 장치 |
US09/933,718 US6541377B2 (en) | 2001-01-03 | 2001-08-22 | Method and apparatus for preparing polysilicon granules |
JP2001259479A JP3592660B2 (ja) | 2001-01-03 | 2001-08-29 | 多結晶シリコンの製造装置 |
EP01121492A EP1223145A1 (en) | 2001-01-03 | 2001-09-07 | Method and apparatus for preparing polysilicon granules |
CNB011409606A CN1172743C (zh) | 2001-01-03 | 2001-09-26 | 制备多晶硅颗粒的方法和装置 |
US10/095,533 US20020102850A1 (en) | 2001-01-03 | 2002-03-13 | Method and apparatus for preparing polysilicon granules |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0000237A KR100411180B1 (ko) | 2001-01-03 | 2001-01-03 | 다결정실리콘의 제조방법과 그 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020059172A true KR20020059172A (ko) | 2002-07-12 |
KR100411180B1 KR100411180B1 (ko) | 2003-12-18 |
Family
ID=19704232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0000237A KR100411180B1 (ko) | 2001-01-03 | 2001-01-03 | 다결정실리콘의 제조방법과 그 장치 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6541377B2 (ko) |
EP (1) | EP1223145A1 (ko) |
JP (1) | JP3592660B2 (ko) |
KR (1) | KR100411180B1 (ko) |
CN (1) | CN1172743C (ko) |
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WO2011063007A3 (en) * | 2009-11-18 | 2011-09-09 | Rec Silicon Inc | Fluid bed reactor |
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KR20200082512A (ko) * | 2018-12-28 | 2020-07-08 | (주)피앤테크 | 웨이퍼 증착용 석영관의 실란가스 접촉 방지방법 |
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US9238211B1 (en) | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
JP6529780B2 (ja) | 2015-02-25 | 2019-06-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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-
2001
- 2001-01-03 KR KR10-2001-0000237A patent/KR100411180B1/ko active IP Right Review Request
- 2001-08-22 US US09/933,718 patent/US6541377B2/en not_active Expired - Lifetime
- 2001-08-29 JP JP2001259479A patent/JP3592660B2/ja not_active Expired - Fee Related
- 2001-09-07 EP EP01121492A patent/EP1223145A1/en not_active Withdrawn
- 2001-09-26 CN CNB011409606A patent/CN1172743C/zh not_active Expired - Fee Related
-
2002
- 2002-03-13 US US10/095,533 patent/US20020102850A1/en not_active Abandoned
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100756310B1 (ko) * | 2006-02-07 | 2007-09-07 | 한국화학연구원 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
WO2011063007A3 (en) * | 2009-11-18 | 2011-09-09 | Rec Silicon Inc | Fluid bed reactor |
US8075692B2 (en) | 2009-11-18 | 2011-12-13 | Rec Silicon Inc | Fluid bed reactor |
CN102713001A (zh) * | 2009-11-18 | 2012-10-03 | 瑞科硅公司 | 流化床反应器 |
US9023425B2 (en) | 2009-11-18 | 2015-05-05 | Rec Silicon Inc | Fluid bed reactor |
US8580203B2 (en) | 2010-10-01 | 2013-11-12 | Siliconvalue Llc | Fluidized bed reactor |
US8580204B2 (en) | 2011-04-20 | 2013-11-12 | Siliconvalue Llc | Fluidized bed reactor |
KR101329029B1 (ko) * | 2011-12-09 | 2013-11-13 | 주식회사 실리콘밸류 | 반응가스 공급노즐을 포함하는 유동층 반응기 |
KR20200082512A (ko) * | 2018-12-28 | 2020-07-08 | (주)피앤테크 | 웨이퍼 증착용 석영관의 실란가스 접촉 방지방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3592660B2 (ja) | 2004-11-24 |
US6541377B2 (en) | 2003-04-01 |
KR100411180B1 (ko) | 2003-12-18 |
CN1363417A (zh) | 2002-08-14 |
US20020102850A1 (en) | 2002-08-01 |
CN1172743C (zh) | 2004-10-27 |
EP1223145A1 (en) | 2002-07-17 |
JP2002220219A (ja) | 2002-08-09 |
US20020086530A1 (en) | 2002-07-04 |
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