KR20020008077A - 전자선 또는 엑스선용 네가티브 레지스트 조성물 - Google Patents
전자선 또는 엑스선용 네가티브 레지스트 조성물 Download PDFInfo
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- KR20020008077A KR20020008077A KR1020010043328A KR20010043328A KR20020008077A KR 20020008077 A KR20020008077 A KR 20020008077A KR 1020010043328 A KR1020010043328 A KR 1020010043328A KR 20010043328 A KR20010043328 A KR 20010043328A KR 20020008077 A KR20020008077 A KR 20020008077A
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C229/00—Compounds containing amino and carboxyl groups bound to the same carbon skeleton
- C07C229/02—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C229/04—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C229/06—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton
- C07C229/18—Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to carbon atoms of six-membered aromatic rings
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- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D213/62—Oxygen or sulfur atoms
- C07D213/63—One oxygen atom
- C07D213/64—One oxygen atom attached in position 2 or 6
- C07D213/643—2-Phenoxypyridines; Derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
- C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D498/04—Ortho-condensed systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
Abstract
Description
Claims (6)
- (A) 전자선 또는 X선의 조사에 의해, 라디칼종을 발생하는 화합물,(B) 물에 불용이고 알칼리수용액에 가용인 수지,(C) 라디칼에 의해 중합가능한 불포화결합을 1개이상 보유하는 화합물,을 함유하는 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물
- 제1항에 있어서, (B)성분의 수지가, 일반식(a1)으로 표시되는 반복단위를 함유하는 수지인 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물.식중, R1은 수소원자, 할로겐원자, 시아노기, 치환기를 보유하고 있어도 좋은, 알킬기 또는 할로알킬기를 표시한다. R2는 수소원자, 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 아릴기, 아랄킬기, 또는 아실기를 표시한다. R3, R4는 같거나 달라도 좋고, 수소원자, 할로겐원자, 시아노기, 또는 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 알케닐기, 아랄킬기, 또는 아릴기를 표시한다.A는 단결합, 치환기를 보유해도 좋은, 알킬렌기, 알케닐렌기, 시클로알킬렌기, 또는 아릴렌기, 또는 -O-, -SO2-, -O-CO-R5-, -CO-O-R6-, -CO-N(R7)-R8-을 표시한다.R5, R6, R8은 같거나 달라도 좋고, 단결합, 치환기를 보유해도 좋은, 알킬렌기, 알케닐렌기, 시클로알킬렌기 또는 아릴렌기의 단독, 또는 이들 기와 에테르구조, 에스테르구조, 아미드구조, 우레탄구조 또는 우레이도구조의 군에서 선택되는 1종이상이 함께 되어서 형성된 2가의 기를 표시한다.R7은 같거나 달라도 좋고, 수소원자, 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 아랄킬기, 또는 아릴기를 표시한다.1은 1∼3의 정수를 표시한다. 또 복수의 R2, 또는 R2와 R3또는 R4가 결합하여 환을 형성하여도 좋다.
- 제1항 또는 제2항에 있어서, (B)성분의 수지가, 라디칼에 의해 중합가능한 불포화결합을 1개이상 보유하는 수지인 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물.
- 제1항 내지 제3항 중 어느 한 항에 있어서, (B)성분의 수지가, 일반식(a2)의 반복단위를 함유하는 수지인 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물.식중, R9는 수소원자, 할로겐원자, 시아노기, 치환기를 보유하고 있어도 좋은, 알킬기 또는 할로알킬기를 표시한다.R10∼R12는 수소원자, 일반식(b), (c), 또는 (d)의 어느 한 기, 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 아릴기, 아랄킬기, 또는 아실기를 표시한다.R13, R14는 같거나 달라도 좋고, 수소원자, 히드록실기, 할로겐원자, 시아노기, 또는 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 알케닐기, 아랄킬기, 또는 아릴기를 표시한다.식중, R15∼R20, R24, R25는 수소원자, 할로겐원자, 시아노기, 치환기를 보유하고 있어도 좋은, 알킬기 또는 할로알킬기를 표시한다.R21, R22는 수소원자, 할로겐원자, 히드록시기, 치환기를 보유하고 있어도 좋은, 알킬기, 알콕시기, 아실옥시기를 표시한다.R23은 수소원자, 치환기를 보유해도 좋은, 알킬기, 시클로알킬기, 아랄킬기, 또는 아릴기를 표시한다.A1은 단결합, 치환기를 보유해도 좋은, 2가의 알킬렌기, 알케닐렌기, 시클로알킬렌기, 또는 아릴렌기, 또는 -O-, SO2-, -O-CO-R26-, -CO-O-R27-, -CO-N(R28)-R29-를 표시한다.R26, R27, R29는 같거나 달라도 좋고, 단결합, 또는 에테르구조, 에스테르구조, 아미드구조, 우레탄구조 또는 우레이도구조를 보유해도 좋고, 또 치환기를 보유해도 좋은, 2가의 알킬렌기, 알케닐렌기, 시클로알킬렌기, 아릴렌기를 표시한다.R28은 수소원자, 치환기를 보유하고 있어도 좋은, 알킬기, 시클로알킬기, 아랄킬기, 또는 아릴기를 표시한다.A2는 단결합, -O-R27-, -N(R28)-R29-를 표시한다.A3은 단결합, -SO2- 또는 알킬렌구조를 보유해도 좋고, 또 치환기를 보유해도 좋은, 아릴렌기를 표시한다.A4는 단결합, 치환기를 보유해도 좋은, 2가의 알킬렌기, 시클로알킬렌기, 아릴렌기, -O-, -SO2-, -CO-, -CO-O-R21-을 표시한다.x, y, z는 0 또는 1을 표시하고, m, n은 0 또는 1이상의 정수를 표시한다.단, 일반식(a2)중, 1개이상은 일반식(b), (c), 또는 (d)의 기를 보유한다. 또 R10∼R12중의 2개, 또는 R10∼R12중의 1개와 R13또는 R14가 결합하여 환을 형성하여도 좋다.
- 제1항 내지 제4항 중 어느 한 항에 있어서, (A)성분의 화합물이, 술포늄, 또는 요오드늄의 술폰산염화합물에서 선택되는 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 75KeV이상의 가속전압조건하에서 전자선 조사하는 것을 특징으로 하는 전자선 또는 X선용 네가티브 레지스트 조성물.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000219253A JP4149122B2 (ja) | 2000-07-19 | 2000-07-19 | 電子線又はx線用ネガ型レジスト組成物 |
JPJP-P-2000-00219253 | 2000-07-19 |
Publications (2)
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KR20020008077A true KR20020008077A (ko) | 2002-01-29 |
KR100775453B1 KR100775453B1 (ko) | 2007-11-12 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020010043328A KR100775453B1 (ko) | 2000-07-19 | 2001-07-19 | 전자선 또는 엑스선용 네가티브 레지스트 조성물 |
Country Status (3)
Country | Link |
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JP (1) | JP4149122B2 (ko) |
KR (1) | KR100775453B1 (ko) |
TW (1) | TW567402B (ko) |
Families Citing this family (2)
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NO20031736D0 (no) * | 2003-04-15 | 2003-04-15 | Amersham Health As | Forbindelser |
US9469941B2 (en) | 2011-07-01 | 2016-10-18 | Empire Technology Development Llc | Paraben derivatives for preserving cellulosic materials |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08240911A (ja) * | 1995-03-02 | 1996-09-17 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
JPH08272099A (ja) * | 1995-03-31 | 1996-10-18 | Oki Electric Ind Co Ltd | 放射線感応性樹脂組成物およびこれを用いたパターン形成方法 |
JP3633179B2 (ja) * | 1997-01-27 | 2005-03-30 | Jsr株式会社 | ポジ型フォトレジスト組成物 |
JPH1149847A (ja) * | 1997-05-15 | 1999-02-23 | Hitachi Ltd | 感光性樹脂組成物とそれを用いた絶縁フィルム及び多層配線板 |
JPH1115154A (ja) * | 1997-06-20 | 1999-01-22 | Chisso Corp | 感光性樹脂組成物及びこれを用いた表示素子 |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
JP2000147752A (ja) * | 1998-11-05 | 2000-05-26 | Fuji Photo Film Co Ltd | ネガ型レジスト組成物 |
JP2000159828A (ja) * | 1998-11-30 | 2000-06-13 | Nippon Shokubai Co Ltd | 感光性樹脂組成物、電子線硬化性樹脂組成物、及びそれらの硬化物 |
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2000
- 2000-07-19 JP JP2000219253A patent/JP4149122B2/ja not_active Expired - Fee Related
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2001
- 2001-07-09 TW TW090116739A patent/TW567402B/zh not_active IP Right Cessation
- 2001-07-19 KR KR1020010043328A patent/KR100775453B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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JP2002040656A (ja) | 2002-02-06 |
KR100775453B1 (ko) | 2007-11-12 |
TW567402B (en) | 2003-12-21 |
JP4149122B2 (ja) | 2008-09-10 |
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