KR20010104157A - 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 - Google Patents
스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 Download PDFInfo
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- KR20010104157A KR20010104157A KR1020000025622A KR20000025622A KR20010104157A KR 20010104157 A KR20010104157 A KR 20010104157A KR 1020000025622 A KR1020000025622 A KR 1020000025622A KR 20000025622 A KR20000025622 A KR 20000025622A KR 20010104157 A KR20010104157 A KR 20010104157A
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- South Korea
- Prior art keywords
- thick film
- sol
- screen printing
- solution
- paste
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 30
- 238000007650 screen-printing Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000843 powder Substances 0.000 claims abstract description 22
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 239000011230 binding agent Substances 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims 1
- 150000004677 hydrates Chemical class 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 239000000243 solution Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229920001223 polyethylene glycol Polymers 0.000 description 5
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000005470 impregnation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910020698 PbZrO3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Glass Compositions (AREA)
- Chemically Coating (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
구 분 | 졸 함침 전(pC/N) | 졸 함침 후(pC/N) |
압전상수(d33) | 40 ~ 70 | 75 ~ 190 |
Claims (9)
- 유기 바인더 및 용제로 구성된 비이클(Vehicle)을 제조하고,상기 비이클에 세라믹 분말을 분산시켜 페이스트(paste)를 제조하고,상기 페이스트로 스크린 프린팅법에 의해 일정한 두께의 후막을 프린팅하고,프린팅된 후막을 건조한 후 유기바인더를 제거하고,프린팅된 후막 표면에 졸(sol) 또는 졸과 유사한 용액(solution)을 도포하여 상기 후막으로 스며들도록 함침시키고,상기 후막을 스피닝(spinning)하여 여분의 졸 또는 졸과 유사한 용액을 제거하고,상기 후막을 건조하여 중간 열처리를 하고,상기 후막을 700 ~ 1200℃의 온도에서 소결하는 단계를 포함하여 이루어지는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 상기 졸과 유사한 용액은 PZT성분을 함유한 알콕사이드(alkoxide), 수화물(hydrate), 카보네이트(carbonate) 등의 금속유기물(metal organic) 등을 단독으로 혹은 혼합된 상태로, 또는 용매에 단순히 용해시킨 용액을 포함하는 것을 특징으로 하는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 상기 졸 또는 졸과 유사한 용액은 상기 세라믹 분말과 동일한 성분인 것을 특징으로 하는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 상기 졸 또는 졸과 유사한 용액은 상기 세라믹 분말과 다른 성분인 것을 특징으로 하는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 스크린 프린팅에 의해 일정 두께의 후막을 형성하고 졸 또는 졸과 유사한 용액을 후막 표면에 함침시킨 후, 이 과정을 2회 이상 반복적으로 실시하여 상기 후막을 치밀화 시키는 것을 특징으로 하는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 상기 소결시 소결온도는 800 ~ 900℃의 범위인 것을 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 제1항에 있어서, 상기 후막의 두께는 1 ~ 200㎛의 범위인 것을 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 유기 바인더 및 용제로 구성된 비이클을 제조하고,상기 비이클에 세라믹 분말을 분산시켜 페이스트를 제조하고,상기 페이스트로 스크린 프린팅법에 의해 일정한 두께의 후막을 프린팅하고,프린팅된 후막을 건조한 후 유기바인더를 제거하고,상기 후막을 소결하고,상기 후막 표면에 졸 또는 졸과 유사한 용액을 도포하여 상기 후막으로 스며들도록 함침시키고,상기 후막을 600 ~ 700℃의 온도에서 소결하는 단계를 포함하여 이루어지는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
- 유기 바인더 및 용제로 구성된 비이클을 제조하고,상기 비이클에 세라믹 분말을 분산시켜 페이스트를 제조하고,상기 페이스트로 스크린 프린팅법에 의해 일정한 두께의 후막을 프린팅하고,프린팅된 후막을 건조한 후 유기바인더를 제거하고,프린팅된 후막 표면에 졸 또는 졸과 유사한 용액을 도포하여 상기 후막으로 스며들도록 함침시키고,상기 후막을 스피닝하여 여분의 졸 또는 졸과 유사한 용액을 제거하고,상기 후막을 건조하여 중간 열처리를 하고,상기 후막을 소결하고,상기 후막 표면에 졸 또는 졸과 유사한 용액을 다시 도포하여 상기 후막으로 스며들도록 함침시키고,상기 후막을 소결하는 단계를 포함하여 이루어지는 스크린 프린팅에 의한 고밀도 세라믹후막 제조방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0025622A KR100369118B1 (ko) | 2000-05-13 | 2000-05-13 | 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 |
US10/030,531 US6749798B2 (en) | 2000-05-13 | 2001-03-16 | High density ceramic thick film fabrication method by screen printing |
JP2001584603A JP3917426B2 (ja) | 2000-05-13 | 2001-03-16 | スクリーン印刷による高密度セラミック厚膜の製造方法 |
DE60134737T DE60134737D1 (de) | 2000-05-13 | 2001-03-16 | Herstellung eines hochdichten dicken keramikfilms durch siebdruck |
AT01915880T ATE400673T1 (de) | 2000-05-13 | 2001-03-16 | Herstellung eines hochdichten dicken keramikfilms durch siebdruck |
EP01915880A EP1285102B1 (en) | 2000-05-13 | 2001-03-16 | High density ceramic thick film fabrication method by screen printing |
PCT/KR2001/000422 WO2001088222A1 (en) | 2000-05-13 | 2001-03-16 | High density ceramic thick film fabrication method by screen printing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0025622A KR100369118B1 (ko) | 2000-05-13 | 2000-05-13 | 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20010104157A true KR20010104157A (ko) | 2001-11-24 |
KR100369118B1 KR100369118B1 (ko) | 2003-01-24 |
Family
ID=19668551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-2000-0025622A KR100369118B1 (ko) | 2000-05-13 | 2000-05-13 | 스크린 프린팅에 의한 고밀도 세라믹 후막 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6749798B2 (ko) |
EP (1) | EP1285102B1 (ko) |
JP (1) | JP3917426B2 (ko) |
KR (1) | KR100369118B1 (ko) |
AT (1) | ATE400673T1 (ko) |
DE (1) | DE60134737D1 (ko) |
WO (1) | WO2001088222A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100449894B1 (ko) * | 2002-01-31 | 2004-09-22 | 한국과학기술원 | 상이한 분말크기분포를 이용한 고 유전상수 및 저오차특성을 가지는 내장형 캐패시터 필름조성물 및 그제조방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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SG115500A1 (en) * | 2002-10-09 | 2005-10-28 | Inst Materials Research & Eng | Method to produce a reliable piezoelectric thick film on a substrate |
DE10350788B3 (de) * | 2003-10-29 | 2005-02-03 | Fachhochschule Kiel | Verfahren zur Herstellung einer Keramikschicht und Siebdruckpaste |
FR2871942B1 (fr) * | 2004-06-17 | 2006-08-04 | Commissariat Energie Atomique | Procede de preparation de materiaux piezoelectriques |
CN1298674C (zh) * | 2005-04-06 | 2007-02-07 | 清华大学 | 一种压电陶瓷膜的制备方法 |
JP4940389B2 (ja) * | 2007-01-19 | 2012-05-30 | 国立大学法人 名古屋工業大学 | 無鉛圧電磁器複合体及びこれを用いた圧電素子 |
FI129896B (en) * | 2021-09-01 | 2022-10-31 | Oulun Yliopisto | Impregnation of ceramic composite material |
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DE2728465C2 (de) * | 1977-06-24 | 1982-04-22 | Preh, Elektrofeinmechanische Werke, Jakob Preh, Nachf. Gmbh & Co, 8740 Bad Neustadt | Gedruckte Schaltung |
US4409261A (en) * | 1980-02-07 | 1983-10-11 | Cts Corporation | Process for air firing oxidizable conductors |
US5603983A (en) * | 1986-03-24 | 1997-02-18 | Ensci Inc | Process for the production of conductive and magnetic transitin metal oxide coated three dimensional substrates |
DK193287A (da) * | 1986-04-16 | 1987-10-17 | Alcan Int Ltd | Sammensat membran |
JPH01112785A (ja) * | 1987-10-27 | 1989-05-01 | Meidensha Corp | 複合圧電体膜の製造方法 |
JPH03283583A (ja) * | 1990-03-30 | 1991-12-13 | Mazda Motor Corp | 圧電体厚膜の製造方法 |
JPH04215414A (ja) | 1990-12-14 | 1992-08-06 | Taiyo Yuden Co Ltd | 積層セラミック電子部品の製造方法 |
US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
JP2747881B2 (ja) | 1994-01-20 | 1998-05-06 | 大日本塗料株式会社 | 浴室用立体模様塗板の製造方法 |
US5457598A (en) * | 1994-04-08 | 1995-10-10 | Radford; Kenneth C. | High capacitance thin film capacitor |
JPH0896624A (ja) * | 1994-09-28 | 1996-04-12 | Murata Mfg Co Ltd | 厚膜ペースト |
JP3723998B2 (ja) * | 1994-12-07 | 2005-12-07 | 株式会社村田製作所 | 厚膜Cu回路基板の製造方法 |
EP0913359A4 (en) * | 1996-07-17 | 1999-10-20 | Citizen Watch Co Ltd | FERROELECTRIC ELEMENT AND PROCESS FOR PRODUCING THE SAME |
US5997795A (en) * | 1997-05-29 | 1999-12-07 | Rutgers, The State University | Processes for forming photonic bandgap structures |
-
2000
- 2000-05-13 KR KR10-2000-0025622A patent/KR100369118B1/ko not_active IP Right Cessation
-
2001
- 2001-03-16 WO PCT/KR2001/000422 patent/WO2001088222A1/en active Application Filing
- 2001-03-16 DE DE60134737T patent/DE60134737D1/de not_active Expired - Fee Related
- 2001-03-16 US US10/030,531 patent/US6749798B2/en not_active Expired - Fee Related
- 2001-03-16 AT AT01915880T patent/ATE400673T1/de not_active IP Right Cessation
- 2001-03-16 EP EP01915880A patent/EP1285102B1/en not_active Expired - Lifetime
- 2001-03-16 JP JP2001584603A patent/JP3917426B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100449894B1 (ko) * | 2002-01-31 | 2004-09-22 | 한국과학기술원 | 상이한 분말크기분포를 이용한 고 유전상수 및 저오차특성을 가지는 내장형 캐패시터 필름조성물 및 그제조방법 |
Also Published As
Publication number | Publication date |
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EP1285102A4 (en) | 2006-05-10 |
EP1285102A1 (en) | 2003-02-26 |
EP1285102B1 (en) | 2008-07-09 |
DE60134737D1 (de) | 2008-08-21 |
JP3917426B2 (ja) | 2007-05-23 |
US6749798B2 (en) | 2004-06-15 |
JP2003533596A (ja) | 2003-11-11 |
WO2001088222A1 (en) | 2001-11-22 |
US20020171182A1 (en) | 2002-11-21 |
ATE400673T1 (de) | 2008-07-15 |
KR100369118B1 (ko) | 2003-01-24 |
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