KR20010015104A - 와이어본딩장치 및 방법 - Google Patents

와이어본딩장치 및 방법 Download PDF

Info

Publication number
KR20010015104A
KR20010015104A KR1020000036879A KR20000036879A KR20010015104A KR 20010015104 A KR20010015104 A KR 20010015104A KR 1020000036879 A KR1020000036879 A KR 1020000036879A KR 20000036879 A KR20000036879 A KR 20000036879A KR 20010015104 A KR20010015104 A KR 20010015104A
Authority
KR
South Korea
Prior art keywords
temperature
heater block
resin substrate
bonding
heater
Prior art date
Application number
KR1020000036879A
Other languages
English (en)
Other versions
KR100370986B1 (ko
Inventor
교마스류이치
미야노후미오
도야마도시히코
Original Assignee
후지야마 겐지
가부시키가이샤 신가와
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지야마 겐지, 가부시키가이샤 신가와 filed Critical 후지야마 겐지
Publication of KR20010015104A publication Critical patent/KR20010015104A/ko
Application granted granted Critical
Publication of KR100370986B1 publication Critical patent/KR100370986B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/003Cooling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/78251Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/787Means for aligning
    • H01L2224/78703Mechanical holding means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/85048Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053Bonding environment
    • H01L2224/85054Composition of the atmosphere
    • H01L2224/85075Composition of the atmosphere being inert
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049Nitrides composed of metals from groups of the periodic table
    • H01L2924/04955th Group
    • H01L2924/04953TaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

디바이스의 상면을 필요한 온도로 유지하고, 또한 수지제 기판의 연화 및 변형을 일으키지 않는 온도로 유지하여 와이어본딩을 행할 수 있다.
히터(11)를 갖는 히터블록(4)의 상방에 배열설치되고, 디바이스(1)의 칩(3)부분을 가열하는 칩 가열수단(20)과 히터블록(4)을 냉각시키도록 이 히터블록(4)에 설치된 냉각파이브(10)를 구비하고, 디바이스(1)의 본딩표면온도를 본딩가능한 온도로 유지하고, 히터블록(4)의 온도를 냉각파이브(10)에 흐르는 냉수 또는 냉풍으로 냉각하여 수지제 기판(2)을 연화시키지 않는 저온으로 유지한다.

Description

와이어본딩장치 및 방법{WIRE BONDING APPARATUS AND METHOD}
본 발명은 와이어본딩장치 및 방법에 관한 것으로, 특히 반도체장치 등의 디바이스의 가열에 관한 것이다.
일반적으로 디바이스의 기판은 금속으로 이루어져 있다. 최근 원가절감의 면에서 수지제 기판에 다수의 칩을 밀집시켜서 탑재하고, 그것에 와이어본딩한 후, 일괄해서 몰딩하고, 그 후 개개의 디바이스로 하는 방법이 채택되도록 되어 있다.
와이어본딩에 있어서는, 본딩의 신뢰성을 향상시키기 위해 디바이스의 표면온도를 높게 유지하는 목적으로, 기판의 하면을 히터블록으로 가열하고 있다. 그렇지만 수지는 연화온도가 150℃ 정도로 낮고, 또한 단열성이 높으므로, 기판의 하면을 히터블록으로 가열하는 방법은, 본딩하는 칩의 표면을 고온으로 하는 것이 어렵다. 더구나 히터블록을 구비한 와이어본딩장치로서, 예를 들면 일본 특개평 4-262545호 공보를 들을 수 있다.
그래서, 칩의 상방으로부터 열풍을 본딩부분에 불어서 가열하는 것이 고려된다. 이 방법에서도 안정된 본딩을 행하기 위하여 200℃의 온도의 열을 장시간 가하면, 기판이 연화되는 가능성이 있다. 기판이 연화되면, 본딩시에 캐필러리의 초음파에너지 및 하중이 기판에 흡수되어 없어지고, 안정된 본딩이 행해지지 않는다는 문제가 있으므로, 연화를 방지하는 것이 과제로 되어 있다. 더욱이, 칩의 상방에 열풍을 불어서 가열하는 것으로서, 예를 들면 일본 특개소 59-184537호 공보를 들을 수 있다.
본 발명의 과제는, 디바이스의 상면을 필요한 온도로 유지하고, 또한 수지제 기판의 연화 및 변형을 일으키지 않는 온도로 유지하여 와이어본딩을 행하는 것이 가능한 와이어본딩장치 및 방법을 제공하는 데 있다.
도 1은 본 발명의 와이어본딩장치의 일실시예의 형태를 도시하는 단면도.
(부호의 설명)
1 : 디바이스 2 : 수지제 기판
3 : 칩 4 : 히터블록
7 : 캐필러리 8 : 와이어
10 : 냉각파이프 11 : 히터
20 : 칩 가열수단 22 : 전열선
26 : 열풍
상기 과제를 해결하기 위한 본 발명의 와이어본딩장치의 제 1 수단은, 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정해서 와이어본딩하는 와이어본딩장치에 있어서, 디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각해서 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 한다.
상기 과제를 해결하기 위한 본 발명의 와이어본딩장치의 제 2 수단은, 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정해서 와이어본딩하는 와이어본딩장치에 있어서, 상기 히터블록의 상방에 배열설치되고, 상기 디바이스의 칩부분을 가열하는 칩 가열수단과, 상기 히터블록을 냉각시키도록 이 히터블록에 설치된 히터블록 냉각수단을 구비하고, 상기 디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각하여 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 한다.
상기 과제를 해결하기 위한 본 발명의 와이어본딩방법은, 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정해서 와이어본딩하는 와이어본딩방법에 있어서, 디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각하여 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 한다.
(발명의 실시형태)
본 발명의 일 실시형태를 도 1에 의해 설명한다. 디바이스(1)는 수지제 기판(2) 상에 칩(3)이 부착되어 있다. 수지제 기판(2)은 히터블록(4) 상에 위치결정 얹어놓이고, 프레임 가압부(5)에 의해 고정된다. 칩(3)의 패드와 수지제 기판(2)의 리드에는 초음파혼(6)의 선단에 고정된 캐필러리(7)에 의해, 캐필러리(7)에 끼워통하게 된 와이어(8)가 접속된다. 이상은 주지의 구조이므로, 이 이상의 설명은 생략한다.
히터블록(4)의 중심에는, 냉수 또는 냉풍이 흐르는 냉각파이프(10)가 배열설치되어 있다. 히터블록(4)의 냉각파이프(10)의 양측에는, 히터(11)가 배열설치되어 있다.
히터블록(4)의 상방에는, 칩(3)을 가열하는 칩 가열수단(20)이 배열설치되어 있다. 칩 가열수단(20)은, 가열본체(21)의 내부에 전열선(22)이 배열설치되고, 가열본체(21)의 상단부에는 압축공기(23)를 공급하는 파이프(24)가 접속되어 있다. 가열본체(21)의 하단부에는, 열풍을 층류로 하여 흐르게 하는 벌집구조형상의 정류판(25)이 고정되어 있다.
다음에 작용에 관해서 설명한다. 압축공기(23)는 전열선(22)에 의해 가열되어서 열풍(26)으로 되고, 이 열풍(26)은 정류판(25)에 의해 층류로 되어 칩(3) 및 그 주변을 가열하고, 디바이스(1)의 본딩면을 필요한 온도로 한다. 수지제 기판(2)의 하면은, 히터(11)와 파이프(24)에 흐르는 냉수 또는 냉풍에 의해 온도를 제어하고, 수지제 기판(2)의 온도를 연화점이하, 예를 들면 130℃로 유지한다.
이것에 의해 디바이스(1) 상면은 본딩에 충분한 온도가 얻어짐과 동시에, 수지제 기판(2)의 온도를 수지제 기판(2)의 연화점이하로 유지할 수가 있다. 더욱이, 수지제 기판(2)에 필요한 온도는, 수지제 기판(2)의 재질에 의해 상이하다. 또 수지제 기판(2)의 하면의 온도는, 히터블록(4)에 온도계를 설치함으로써 용이하게 측정될 수 있다. 또 디바이스(1)의 상면의 온도제어는, 디바이스표면으로부터 방사되는 적외선을 측정하여 행할 수 있다. 간이한 방법으로서는, 디바이스(1)가 가열되어 발생되는 가스를 측정하여 행할 수 있다.
이와 같이, 파이프(24)에 흐르는 냉수 또는 냉풍을 제어함으로써 디바이스(1)의 본딩표면온도를 본딩가능한 온도로 유지하고, 또 수지제 기판(2)을 연화하지 않는 충분한 저온으로 유지하여 본딩을 행할 수 있다.
본 발명은 디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 히터를 갖는 히터블록의 온도를 냉각수단으로 냉각시켜서 상기 수지제 기판을 연화되지 않는 저온으로 유지하므로, 디바이스의 상면을 필요한 온도로 유지하고, 또한 수지제 기판의 연화 및 변형을 일으키지 않는 온도로 유지하여 와이어본딩을 행할 수 있다.

Claims (3)

  1. 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정하여 와이어본딩하는 와이어본딩장치에 있어서,
    디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각하여 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 하는 와이어본딩장치.
  2. 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정하여 와이어본딩하는 와이어본딩장치에 있어서,
    상기 히터블록의 상방에 배열설치되고, 상기 디바이스의 칩부분을 가열하는 칩 가열수단과, 상기 히터블록을 냉각시키도록 이 히터블록에 설치된 히터블록 냉각수단을 구비하고, 상기 디바이스의 본딩표면온도를 본딩 가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각하여 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 하는 와이어본딩장치.
  3. 수지제 기판을 갖는 디바이스를, 히터를 갖는 히터블록상에 얹어놓고, 프레임 가압부로 고정하여 와이어본딩하는 와이어본딩방법에 있어서,
    디바이스의 본딩표면온도를 본딩가능한 온도로 유지하고, 상기 히터블록의 온도를 냉각수단으로 냉각하여 상기 수지제 기판을 연화하지 않는 저온으로 유지하는 것을 특징으로 하는 와이어본딩방법.
KR10-2000-0036879A 1999-07-02 2000-06-30 와이어본딩장치 및 방법 KR100370986B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18893899A JP2001015545A (ja) 1999-07-02 1999-07-02 ワイヤボンディング装置及び方法
JP99-188938 1999-07-02

Publications (2)

Publication Number Publication Date
KR20010015104A true KR20010015104A (ko) 2001-02-26
KR100370986B1 KR100370986B1 (ko) 2003-02-06

Family

ID=16232538

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0036879A KR100370986B1 (ko) 1999-07-02 2000-06-30 와이어본딩장치 및 방법

Country Status (4)

Country Link
US (2) US6491202B1 (ko)
JP (1) JP2001015545A (ko)
KR (1) KR100370986B1 (ko)
TW (1) TW511196B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781150B1 (ko) * 2001-12-28 2007-11-30 삼성테크윈 주식회사 와이어 본딩 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4014579B2 (ja) * 2004-04-01 2007-11-28 沖電気工業株式会社 ワイヤボンディング装置及びワイヤボンディング方法
KR101120718B1 (ko) * 2004-08-20 2012-03-23 프리스케일 세미컨덕터, 인크. 듀얼 게이지 리드프레임
EP2039460A3 (de) * 2004-11-02 2014-07-02 HID Global GmbH Verlegevorrichtung, Kontaktiervorrichtung, Zustellsystem, Verlege- und Kontaktiereinheit, herstellungsanlage, Verfahren zur Herstellung und eine Transpondereinheit
WO2008007940A1 (en) * 2006-07-11 2008-01-17 Advance Solution Material Technology Sdn.Bhd.(594714-V) Dissipative ceramic wire clamp
US7971339B2 (en) * 2006-09-26 2011-07-05 Hid Global Gmbh Method and apparatus for making a radio frequency inlay
US8286332B2 (en) * 2006-09-26 2012-10-16 Hid Global Gmbh Method and apparatus for making a radio frequency inlay
ES2355682T3 (es) * 2007-09-18 2011-03-30 Hid Global Ireland Teoranta Procedimiento para la unión de un conductor de cable dispuesto sobre un sustrato.
SG155779A1 (en) * 2008-03-10 2009-10-29 Micron Technology Inc Apparatus and methods of forming wire bonds
CN102259246A (zh) * 2011-07-19 2011-11-30 东莞佰鸿电子有限公司 Led连接线焊接防氧化装置
CN104057221B (zh) * 2014-07-11 2015-10-14 威海永崮耐磨制品有限公司 耐磨板堆焊机水冷装置
DE102014011219B4 (de) * 2014-07-29 2017-10-26 Audi Ag Vorrichtung und Verfahren zur Ausbildung einer elektrischen Kontaktierung zwischen einer Energiespeicherzelle und einer Leiterblechstruktur
DE102015106298B4 (de) * 2015-04-24 2017-01-26 Semikron Elektronik Gmbh & Co. Kg Vorrichtung, Verfahren und Anlage zur inhomogenen Abkühlung eines flächigen Gegenstandes
CN105364344B (zh) * 2015-11-03 2017-03-08 中冶辽宁德龙钢管有限公司 一种带钢接板焊接用铜垫板的固定方法及结构
US11546991B2 (en) 2020-03-11 2023-01-03 Peter C. Salmon Densely packed electronic systems
US10966338B1 (en) 2020-03-11 2021-03-30 Peter C. Salmon Densely packed electronic systems
US11393807B2 (en) 2020-03-11 2022-07-19 Peter C. Salmon Densely packed electronic systems
CN112025144B (zh) * 2020-09-07 2022-05-31 九江海天设备制造有限公司 一种用于铝合金焊接工作台的散热装置及其使用方法
US11523543B1 (en) 2022-02-25 2022-12-06 Peter C. Salmon Water cooled server
US11445640B1 (en) 2022-02-25 2022-09-13 Peter C. Salmon Water cooled server

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184537A (ja) 1983-04-01 1984-10-19 Matsushita Electric Ind Co Ltd 加熱装置付きワイヤボンダ
US4692839A (en) * 1985-06-24 1987-09-08 Digital Equipment Corporation Multiple chip interconnection system and package
JP3094374B2 (ja) 1991-02-15 2000-10-03 株式会社新川 ワイヤボンダ用フレーム固定装置
KR940001270Y1 (ko) * 1991-07-15 1994-03-09 금성일렉트론 주식회사 와이어 본드의 히터블록
JP3005789B2 (ja) * 1993-11-25 2000-02-07 株式会社新川 ワイヤボンデイング装置
US5923086A (en) * 1997-05-14 1999-07-13 Intel Corporation Apparatus for cooling a semiconductor die
US6031216A (en) * 1998-06-17 2000-02-29 National Semiconductor Corporation Wire bonding methods and apparatus for heat sensitive metallization using a thermally insulated support portion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100781150B1 (ko) * 2001-12-28 2007-11-30 삼성테크윈 주식회사 와이어 본딩 장치

Also Published As

Publication number Publication date
US6467679B2 (en) 2002-10-22
JP2001015545A (ja) 2001-01-19
US20010042777A1 (en) 2001-11-22
TW511196B (en) 2002-11-21
KR100370986B1 (ko) 2003-02-06
US6491202B1 (en) 2002-12-10

Similar Documents

Publication Publication Date Title
KR100370986B1 (ko) 와이어본딩장치 및 방법
GB1313342A (en) Semiconductor chip bonding
US6031216A (en) Wire bonding methods and apparatus for heat sensitive metallization using a thermally insulated support portion
US8444044B2 (en) Apparatus and methods for forming wire bonds
KR0151695B1 (ko) 와이어 본딩장치
JP2004503939A (ja) 赤外線加熱によるはんだバンプおよびワイヤボンディング
US7614540B2 (en) Thermal insulation for a bonding tool
JP2889399B2 (ja) テープ自動化ボンディング法
CN113020742B (zh) 一种提高焊接精准度的焊线机
US7681775B2 (en) Multi-layer thermal insulation for a bonding system
CN102054658B (zh) 封装打线工艺的加热治具及其方法
US7766211B2 (en) Temperature control of a bonding stage
JP2885614B2 (ja) ワイヤボンデイング装置
CN220253187U (zh) 双面焊线长基板pcb的固定治具
CN107999919A (zh) 助焊系统、包括助焊系统的焊接机及其操作方法
JP2536957Y2 (ja) ダイボンディング装置
JPH02276258A (ja) ワイヤボンディング装置
JP2011044530A (ja) はんだ接合方法およびはんだ接合装置
JP2829471B2 (ja) ワイヤボンダ
CN114843199A (zh) 一种半导体器件引线键合装置
KR960002774A (ko) 반도체 패키지의 와이어 본딩장치
JPH04346450A (ja) ワイヤボンディング装置
JPH0539632Y2 (ko)
JPH07176549A (ja) ダイボンド装置
JPS58186943A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090105

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee