KR20010013723A - 고밀도 저압 플라즈마 반응기에서 금속 및 금속 규화물질화방법 - Google Patents

고밀도 저압 플라즈마 반응기에서 금속 및 금속 규화물질화방법 Download PDF

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Publication number
KR20010013723A
KR20010013723A KR1019997011738A KR19997011738A KR20010013723A KR 20010013723 A KR20010013723 A KR 20010013723A KR 1019997011738 A KR1019997011738 A KR 1019997011738A KR 19997011738 A KR19997011738 A KR 19997011738A KR 20010013723 A KR20010013723 A KR 20010013723A
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KR
South Korea
Prior art keywords
metal
nitride
layer
silicon nitride
substrate
Prior art date
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Ceased
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KR1019997011738A
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English (en)
Korean (ko)
Inventor
윤-엔잭 양
칭-하 첸
이아-에르아더 첸
Original Assignee
로브그렌 리차드 에이치.
램 리서치 코포레이션
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Application filed by 로브그렌 리차드 에이치., 램 리서치 코포레이션 filed Critical 로브그렌 리차드 에이치.
Publication of KR20010013723A publication Critical patent/KR20010013723A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019997011738A 1997-06-24 1998-06-22 고밀도 저압 플라즈마 반응기에서 금속 및 금속 규화물질화방법 Ceased KR20010013723A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/881,710 1997-06-24
US08/881,710 US6221792B1 (en) 1997-06-24 1997-06-24 Metal and metal silicide nitridization in a high density, low pressure plasma reactor

Publications (1)

Publication Number Publication Date
KR20010013723A true KR20010013723A (ko) 2001-02-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997011738A Ceased KR20010013723A (ko) 1997-06-24 1998-06-22 고밀도 저압 플라즈마 반응기에서 금속 및 금속 규화물질화방법

Country Status (6)

Country Link
US (2) US6221792B1 (https=)
EP (1) EP1016130A1 (https=)
JP (1) JP2002506568A (https=)
KR (1) KR20010013723A (https=)
TW (1) TW490509B (https=)
WO (1) WO1998059366A1 (https=)

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US6653222B2 (en) * 1999-08-03 2003-11-25 International Business Machines Corporation Plasma enhanced liner
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KR100379333B1 (ko) * 2000-08-16 2003-04-10 주식회사 하이닉스반도체 티타늄 실리사이드막 제조방법
US6455414B1 (en) * 2000-11-28 2002-09-24 Tokyo Electron Limited Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
US6426305B1 (en) * 2001-07-03 2002-07-30 International Business Machines Corporation Patterned plasma nitridation for selective epi and silicide formation
US6593234B2 (en) * 2001-07-24 2003-07-15 Micron Technology, Inc. Methods of utilizing metal rich silicide in forming semiconductor constructions
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US7144806B1 (en) * 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7856035B2 (en) * 2004-05-05 2010-12-21 Welch Allyn, Inc. Method and apparatus for wireless transmission of data
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US7271363B2 (en) 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7749896B2 (en) * 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
JP5808623B2 (ja) * 2011-09-07 2015-11-10 株式会社アルバック バリアメタル層の形成方法
CA2813159A1 (en) * 2012-05-24 2013-11-24 Sulzer Metco Ag Method of modifying a boundary region of a substrate
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
CN108573942B (zh) * 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
CN112159949B (zh) * 2020-10-27 2023-03-10 广东省科学院新材料研究所 氮化钛涂层的制备方法、基材及应用
CN112746320B (zh) * 2020-12-22 2022-07-05 中国科学院半导体研究所 利用磁控溅射在硅衬底上制备氮化锆薄膜的方法
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
US20240194527A1 (en) * 2022-12-07 2024-06-13 Applied Materials, Inc. Interlayer for Resistivity Reduction in Metal Deposition Applications

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US5334264A (en) 1992-06-30 1994-08-02 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Titanium plasma nitriding intensified by thermionic emission source
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030001939A (ko) * 2001-06-28 2003-01-08 동부전자 주식회사 반도체소자의 장벽층 형성 방법 및 장치

Also Published As

Publication number Publication date
WO1998059366A1 (en) 1998-12-30
EP1016130A1 (en) 2000-07-05
JP2002506568A (ja) 2002-02-26
US6221792B1 (en) 2001-04-24
US20010002326A1 (en) 2001-05-31
TW490509B (en) 2002-06-11

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