TW490509B - Metal and metal silicide nitridization in a high a density, low pressure plasma reactor - Google Patents

Metal and metal silicide nitridization in a high a density, low pressure plasma reactor Download PDF

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Publication number
TW490509B
TW490509B TW087110020A TW87110020A TW490509B TW 490509 B TW490509 B TW 490509B TW 087110020 A TW087110020 A TW 087110020A TW 87110020 A TW87110020 A TW 87110020A TW 490509 B TW490509 B TW 490509B
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TW
Taiwan
Prior art keywords
metal
nitride
layer
substrate
patent application
Prior art date
Application number
TW087110020A
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English (en)
Chinese (zh)
Inventor
Yun-Yen Jack Yang
Ching-Hwa Chen
Yea-Jer Arthur Chen
Original Assignee
Lam Res Corp
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Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TW490509B publication Critical patent/TW490509B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW087110020A 1997-06-24 1998-06-22 Metal and metal silicide nitridization in a high a density, low pressure plasma reactor TW490509B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/881,710 US6221792B1 (en) 1997-06-24 1997-06-24 Metal and metal silicide nitridization in a high density, low pressure plasma reactor

Publications (1)

Publication Number Publication Date
TW490509B true TW490509B (en) 2002-06-11

Family

ID=25379039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087110020A TW490509B (en) 1997-06-24 1998-06-22 Metal and metal silicide nitridization in a high a density, low pressure plasma reactor

Country Status (6)

Country Link
US (2) US6221792B1 (https=)
EP (1) EP1016130A1 (https=)
JP (1) JP2002506568A (https=)
KR (1) KR20010013723A (https=)
TW (1) TW490509B (https=)
WO (1) WO1998059366A1 (https=)

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US6593234B2 (en) * 2001-07-24 2003-07-15 Micron Technology, Inc. Methods of utilizing metal rich silicide in forming semiconductor constructions
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US7271363B2 (en) 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
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US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
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JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
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Publication number Priority date Publication date Assignee Title
CN108573942A (zh) * 2017-03-09 2018-09-25 联华电子股份有限公司 内连线结构及其制作方法
CN108573942B (zh) * 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法

Also Published As

Publication number Publication date
WO1998059366A1 (en) 1998-12-30
EP1016130A1 (en) 2000-07-05
JP2002506568A (ja) 2002-02-26
KR20010013723A (ko) 2001-02-26
US6221792B1 (en) 2001-04-24
US20010002326A1 (en) 2001-05-31

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