JP2002506568A - 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化 - Google Patents

高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化

Info

Publication number
JP2002506568A
JP2002506568A JP50493399A JP50493399A JP2002506568A JP 2002506568 A JP2002506568 A JP 2002506568A JP 50493399 A JP50493399 A JP 50493399A JP 50493399 A JP50493399 A JP 50493399A JP 2002506568 A JP2002506568 A JP 2002506568A
Authority
JP
Japan
Prior art keywords
metal
nitride
layer
silicide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP50493399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002506568A5 (https=
Inventor
ヤング・ユン−イェン・ジャック
チェン・チング−フワ
チェン・イェ−ジャー・アーサー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2002506568A publication Critical patent/JP2002506568A/ja
Publication of JP2002506568A5 publication Critical patent/JP2002506568A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP50493399A 1997-06-24 1998-06-22 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化 Withdrawn JP2002506568A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/881,710 1997-06-24
US08/881,710 US6221792B1 (en) 1997-06-24 1997-06-24 Metal and metal silicide nitridization in a high density, low pressure plasma reactor
PCT/US1998/012934 WO1998059366A1 (en) 1997-06-24 1998-06-22 Metal and metal silicide nitridization in a high density, low pressure plasma reactor

Publications (2)

Publication Number Publication Date
JP2002506568A true JP2002506568A (ja) 2002-02-26
JP2002506568A5 JP2002506568A5 (https=) 2006-01-05

Family

ID=25379039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50493399A Withdrawn JP2002506568A (ja) 1997-06-24 1998-06-22 高密度・低圧プラズマ反応装置を用いた金属および珪化金属の窒化

Country Status (6)

Country Link
US (2) US6221792B1 (https=)
EP (1) EP1016130A1 (https=)
JP (1) JP2002506568A (https=)
KR (1) KR20010013723A (https=)
TW (1) TW490509B (https=)
WO (1) WO1998059366A1 (https=)

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JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置

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US6455414B1 (en) * 2000-11-28 2002-09-24 Tokyo Electron Limited Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers
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US6426305B1 (en) * 2001-07-03 2002-07-30 International Business Machines Corporation Patterned plasma nitridation for selective epi and silicide formation
US6593234B2 (en) * 2001-07-24 2003-07-15 Micron Technology, Inc. Methods of utilizing metal rich silicide in forming semiconductor constructions
US9708707B2 (en) * 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US7144806B1 (en) * 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US7713592B2 (en) * 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US9121098B2 (en) 2003-02-04 2015-09-01 Asm International N.V. NanoLayer Deposition process for composite films
US7856035B2 (en) * 2004-05-05 2010-12-21 Welch Allyn, Inc. Method and apparatus for wireless transmission of data
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US7271363B2 (en) 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
US7749896B2 (en) * 2005-08-23 2010-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for forming the same
CA2813159A1 (en) * 2012-05-24 2013-11-24 Sulzer Metco Ag Method of modifying a boundary region of a substrate
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
CN108573942B (zh) * 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
CN112159949B (zh) * 2020-10-27 2023-03-10 广东省科学院新材料研究所 氮化钛涂层的制备方法、基材及应用
CN112746320B (zh) * 2020-12-22 2022-07-05 中国科学院半导体研究所 利用磁控溅射在硅衬底上制备氮化锆薄膜的方法
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
TW202438705A (zh) * 2022-10-28 2024-10-01 美商蘭姆研究公司 選擇性鉬填充
US20240194527A1 (en) * 2022-12-07 2024-06-13 Applied Materials, Inc. Interlayer for Resistivity Reduction in Metal Deposition Applications

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013058565A (ja) * 2011-09-07 2013-03-28 Ulvac Japan Ltd バリアメタル層の形成方法、及び、バリアメタル層の形成装置

Also Published As

Publication number Publication date
WO1998059366A1 (en) 1998-12-30
EP1016130A1 (en) 2000-07-05
KR20010013723A (ko) 2001-02-26
US6221792B1 (en) 2001-04-24
US20010002326A1 (en) 2001-05-31
TW490509B (en) 2002-06-11

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