KR20010005846A - 발광 소자 및 그 제조 방법 - Google Patents

발광 소자 및 그 제조 방법 Download PDF

Info

Publication number
KR20010005846A
KR20010005846A KR1019997008920A KR19997008920A KR20010005846A KR 20010005846 A KR20010005846 A KR 20010005846A KR 1019997008920 A KR1019997008920 A KR 1019997008920A KR 19997008920 A KR19997008920 A KR 19997008920A KR 20010005846 A KR20010005846 A KR 20010005846A
Authority
KR
South Korea
Prior art keywords
semiconductor layer
light emitting
electrode
bonding
bonding electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019997008920A
Other languages
English (en)
Korean (ko)
Inventor
시게또시 이또
Original Assignee
마찌다 가쯔히꼬
샤프 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마찌다 가쯔히꼬, 샤프 가부시키가이샤 filed Critical 마찌다 가쯔히꼬
Publication of KR20010005846A publication Critical patent/KR20010005846A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

Landscapes

  • Led Devices (AREA)
KR1019997008920A 1997-03-31 1998-03-25 발광 소자 및 그 제조 방법 Ceased KR20010005846A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP07930097A JP4203132B2 (ja) 1997-03-31 1997-03-31 発光素子及びその製造方法
JP1997-079300 1997-03-31
PCT/JP1998/001355 WO1998044569A1 (fr) 1997-03-31 1998-03-25 Dispositif electroluminescent et son procede de fabrication

Publications (1)

Publication Number Publication Date
KR20010005846A true KR20010005846A (ko) 2001-01-15

Family

ID=13686004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997008920A Ceased KR20010005846A (ko) 1997-03-31 1998-03-25 발광 소자 및 그 제조 방법

Country Status (6)

Country Link
US (1) US6583442B2 (https=)
JP (1) JP4203132B2 (https=)
KR (1) KR20010005846A (https=)
CN (1) CN100346487C (https=)
TW (1) TW392194B (https=)
WO (1) WO1998044569A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170064775A (ko) * 2015-12-02 2017-06-12 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2003110139A (ja) * 2001-09-28 2003-04-11 Sanyo Electric Co Ltd 窒化物系半導体発光素子
US20030132433A1 (en) * 2002-01-15 2003-07-17 Piner Edwin L. Semiconductor structures including a gallium nitride material component and a silicon germanium component
TW543169B (en) * 2002-02-08 2003-07-21 Ritdisplay Corp Package structure and process of organic light-emitting diode panel
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
KR100497127B1 (ko) * 2002-09-05 2005-06-28 삼성전기주식회사 질화갈륨계 반도체 엘이디 소자
KR100543696B1 (ko) * 2002-09-09 2006-01-20 삼성전기주식회사 고효율 발광 다이오드
JP4635985B2 (ja) * 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
TW569409B (en) * 2002-10-22 2004-01-01 Ritek Display Technology Corp Process for packaging an OLED panel
CN101872822B (zh) * 2002-11-16 2013-12-18 Lg伊诺特有限公司 光器件及其制造方法
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
JP2008544540A (ja) 2005-06-22 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100661614B1 (ko) 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
JP5326225B2 (ja) * 2006-05-29 2013-10-30 日亜化学工業株式会社 窒化物半導体発光素子
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
JP5235878B2 (ja) * 2007-06-15 2013-07-10 ローム株式会社 半導体発光素子
EP2174351A1 (en) 2007-07-26 2010-04-14 The Regents of the University of California Light emitting diodes with a p-type surface
USD579019S1 (en) * 2007-08-27 2008-10-21 Podium Photonics (Guangzhou) Ltd. Chip
USD578536S1 (en) * 2007-08-27 2008-10-14 Podium Photonics (Guangzhou) Ltd. Chip
WO2011111642A1 (ja) * 2010-03-08 2011-09-15 日亜化学工業株式会社 半導体発光素子及びその製造方法
US8785952B2 (en) * 2011-10-10 2014-07-22 Lg Innotek Co., Ltd. Light emitting device and light emitting device package including the same
US11233176B2 (en) 2017-03-08 2022-01-25 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package
CN108039126B (zh) * 2017-12-07 2021-04-23 大连海事大学 一种led阵列走线方法及显示屏系统
JP6803595B1 (ja) * 2020-09-16 2020-12-23 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69433926T2 (de) * 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JPH07288340A (ja) 1994-04-19 1995-10-31 Mitsubishi Cable Ind Ltd 発光素子およびその製造方法
WO1996003776A1 (en) * 1994-07-21 1996-02-08 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
JP3318698B2 (ja) 1994-09-30 2002-08-26 ローム株式会社 半導体発光素子
JP3841460B2 (ja) * 1995-03-13 2006-11-01 豊田合成株式会社 半導体光素子
US6180960B1 (en) * 1995-04-12 2001-01-30 Nippon Sheet Glass Co., Ltd. Surface light-emitting element and self-scanning type light-emitting device
JPH0964418A (ja) * 1995-08-22 1997-03-07 Fujitsu Ltd 発光素子及びその製造方法
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170064775A (ko) * 2015-12-02 2017-06-12 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치

Also Published As

Publication number Publication date
JP4203132B2 (ja) 2008-12-24
WO1998044569A1 (fr) 1998-10-08
TW392194B (en) 2000-06-01
US20020121637A1 (en) 2002-09-05
JPH10275942A (ja) 1998-10-13
US6583442B2 (en) 2003-06-24
CN100346487C (zh) 2007-10-31
CN1251688A (zh) 2000-04-26

Similar Documents

Publication Publication Date Title
KR20010005846A (ko) 발광 소자 및 그 제조 방법
US20250006869A1 (en) Light emitting diode package and method of manufacturing the same
KR100288824B1 (ko) 화합물반도체발광장치
KR100616600B1 (ko) 수직구조 질화물 반도체 발광소자
JPH114020A (ja) 半導体発光素子及びその製造方法、並びに半導体発光装置
KR102573271B1 (ko) 반도체 발광소자
KR19990014042A (ko) 반도체 발광 소자
DE102009018603A1 (de) Leuchtvorrichtungen, dieselben enthaltende Pakete und Systeme und Herstellungsverfahren derselben
KR100638732B1 (ko) 수직구조 질화물 반도체 발광소자의 제조방법
KR100431760B1 (ko) AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법
US12557463B2 (en) Light emitting device
JP2004514285A (ja) 光抽出を改善するためのテーパーづけ側壁を有するレーザ分離ダイ
KR102212666B1 (ko) 발광소자
JPH0794783A (ja) 窒化ガリウム系化合物半導体発光素子
KR20120011174A (ko) 발광모듈 및 이를 포함하는 패키지
KR20110085726A (ko) 반도체 발광소자 및 이를 제조하는 방법
JPH10335699A (ja) 化合物半導体発光素子とその製造方法
KR102737506B1 (ko) 반도체 발광소자 및 그 제조 방법
JP2000049376A (ja) 発光素子
KR100982983B1 (ko) 수직구조 반도체 발광소자 및 그 제조방법
JP4703236B2 (ja) 発光装置及びその製造方法
KR100587018B1 (ko) 플립칩용 질화물 반도체 발광소자
KR101055778B1 (ko) 발광 다이오드 및 이의 제조 방법
KR100631970B1 (ko) 플립칩용 질화물 반도체 발광소자
KR100663907B1 (ko) 다수의 셀이 결합된 발광 소자 및 이의 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 19990930

Patent event code: PA01051R01D

Comment text: International Patent Application

A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19991001

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20011031

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20020625

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20011031

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20020726

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20020625

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20040426

Appeal identifier: 2002101002936

Request date: 20020726

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20020826

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20020726

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20011231

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 19991001

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20020726

Effective date: 20040426

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20040426

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20020726

Decision date: 20040426

Appeal identifier: 2002101002936