KR20000028759A - 반도체 탑재 패키지 - Google Patents

반도체 탑재 패키지 Download PDF

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Publication number
KR20000028759A
KR20000028759A KR1019990042170A KR19990042170A KR20000028759A KR 20000028759 A KR20000028759 A KR 20000028759A KR 1019990042170 A KR1019990042170 A KR 1019990042170A KR 19990042170 A KR19990042170 A KR 19990042170A KR 20000028759 A KR20000028759 A KR 20000028759A
Authority
KR
South Korea
Prior art keywords
diamond
metal member
substrate
mounting package
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019990042170A
Other languages
English (en)
Korean (ko)
Inventor
야마모또요시유끼
이마이다까히로
Original Assignee
오카야마 노리오
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오카야마 노리오, 스미토모덴키고교가부시키가이샤 filed Critical 오카야마 노리오
Publication of KR20000028759A publication Critical patent/KR20000028759A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1019990042170A 1998-10-02 1999-10-01 반도체 탑재 패키지 Withdrawn KR20000028759A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28166298 1998-10-02
JP98-281662 1998-10-02
JP11248983A JP2000174166A (ja) 1998-10-02 1999-09-02 半導体搭載パッケ―ジ
JP99-248983 1999-09-02

Publications (1)

Publication Number Publication Date
KR20000028759A true KR20000028759A (ko) 2000-05-25

Family

ID=26539043

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990042170A Withdrawn KR20000028759A (ko) 1998-10-02 1999-10-01 반도체 탑재 패키지

Country Status (5)

Country Link
US (1) US6316826B1 (enExample)
EP (1) EP0991121A3 (enExample)
JP (1) JP2000174166A (enExample)
KR (1) KR20000028759A (enExample)
CA (1) CA2284396A1 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001031082A1 (en) * 1999-10-28 2001-05-03 P1 Diamond, Inc. Improved diamond thermal management components
US7125786B2 (en) * 2000-04-11 2006-10-24 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US7892974B2 (en) * 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6942025B2 (en) 2000-09-20 2005-09-13 Degree Controls, Inc. Uniform heat dissipating and cooling heat sink
US6653730B2 (en) * 2000-12-14 2003-11-25 Intel Corporation Electronic assembly with high capacity thermal interface
US7276222B2 (en) * 2001-01-19 2007-10-02 Chevron U.S.A. Inc. Diamondoid-containing thermally conductive materials
US6783589B2 (en) * 2001-01-19 2004-08-31 Chevron U.S.A. Inc. Diamondoid-containing materials in microelectronics
US7306674B2 (en) * 2001-01-19 2007-12-11 Chevron U.S.A. Inc. Nucleation of diamond films using higher diamondoids
JP2003051609A (ja) * 2001-08-03 2003-02-21 Tokyo Gas Co Ltd ダイヤモンド高輝度紫外線発光素子
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
US6699571B1 (en) * 2002-03-27 2004-03-02 Morgan Advanced Ceramics, Inc. Devices and methods for mounting components of electronic circuitry
US20030183368A1 (en) * 2002-04-02 2003-10-02 Paradis Leo Richard Diamond heat sink
AU2003289275A1 (en) 2002-12-09 2004-06-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same
JP4014528B2 (ja) * 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
US6924170B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Diamond-silicon hybrid integrated heat spreader
JP2005191092A (ja) * 2003-12-24 2005-07-14 Ngk Spark Plug Co Ltd セラミックパッケージ
US7033912B2 (en) * 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7312562B2 (en) 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
JP4378334B2 (ja) * 2005-09-09 2009-12-02 日本碍子株式会社 ヒートスプレッダモジュール及びその製造方法
JP4870426B2 (ja) * 2005-12-28 2012-02-08 中国砂輪企業股▲分▼有限公司 熱伝導効率の高い回路板
CN100468797C (zh) * 2005-12-29 2009-03-11 联胜光电股份有限公司 集成散热片的半导体器件及其制造方法
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7791188B2 (en) 2007-06-18 2010-09-07 Chien-Min Sung Heat spreader having single layer of diamond particles and associated methods
US8907473B2 (en) * 2009-02-02 2014-12-09 Estivation Properties Llc Semiconductor device having a diamond substrate heat spreader
CN102518956B (zh) * 2009-05-21 2015-08-19 长春藤控股有限公司 发光源封装体
US9006086B2 (en) 2010-09-21 2015-04-14 Chien-Min Sung Stress regulated semiconductor devices and associated methods
EP2889903A1 (en) * 2013-12-24 2015-07-01 Nxp B.V. Die with a multilayer backside interface layer for solder bonding to a substrate and corresponding manufacturing method
GB201610053D0 (en) * 2016-06-09 2016-07-27 Element Six Tech Ltd Synthetic diamond heat spreaders
JP7014012B2 (ja) * 2018-03-30 2022-02-01 三菱電機株式会社 半導体装置、半導体装置の製造方法および電力変換装置
US10700036B2 (en) 2018-10-19 2020-06-30 Toyota Motor Engineering & Manufacturing North America, Inc. Encapsulated stress mitigation layer and power electronic assemblies incorporating the same
JP7494726B2 (ja) * 2020-12-18 2024-06-04 セイコーエプソン株式会社 熱伝導構造体および熱伝導構造体の製造方法
CN117712057B (zh) * 2024-02-06 2024-05-10 成都汉芯国科集成技术有限公司 一种多级金刚石抗辐射过载的芯片封装结构及封装方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974518A (en) * 1975-02-21 1976-08-10 Bell Telephone Laboratories, Incorporated Encapsulation for high frequency semiconductor device
JPH0754834B2 (ja) * 1986-03-26 1995-06-07 新技術事業団 ダイヤモンド膜製半導体基板の製造方法
JPS63299238A (ja) * 1987-05-29 1988-12-06 Mitsubishi Metal Corp 半導体装置のダイボンディング用基板
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
US5137398A (en) * 1990-04-27 1992-08-11 Sumitomo Electric Industries, Ltd. Drill bit having a diamond-coated sintered body
DE69231790T2 (de) * 1991-07-01 2002-03-07 Sumitomo Electric Industries, Ltd. Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung
EP0552475B1 (de) * 1992-01-23 1997-09-10 Siemens Aktiengesellschaft Halbleitermodul mit hoher Isolations- und Wärmefähigkeit
US5493153A (en) * 1992-11-26 1996-02-20 Tokyo Tungsten Co., Ltd. Plastic-packaged semiconductor device having a heat sink matched with a plastic package
US5328715A (en) * 1993-02-11 1994-07-12 General Electric Company Process for making metallized vias in diamond substrates
US5629559A (en) * 1993-04-06 1997-05-13 Tokuyama Corporation Package for semiconductor device
JP3387221B2 (ja) 1993-06-25 2003-03-17 住友電気工業株式会社 半導体用高熱伝導性セラミックスパッケージ
US5679895A (en) * 1995-05-01 1997-10-21 Kobe Steel Usa, Inc. Diamond field emission acceleration sensor
US5834840A (en) * 1995-05-25 1998-11-10 Massachusetts Institute Of Technology Net-shape ceramic processing for electronic devices and packages
WO1997005757A1 (en) * 1995-07-31 1997-02-13 Crystalline Materials Corporation Diamond electronic packages featuring bonded metal
US6071627A (en) * 1996-03-29 2000-06-06 Kabushiki Kaisha Toshiba Heat-resistant member and a method for evaluating quality of a heat-resistant member
JP4080030B2 (ja) * 1996-06-14 2008-04-23 住友電気工業株式会社 半導体基板材料、半導体基板、半導体装置、及びその製造方法
US6211463B1 (en) * 1998-01-26 2001-04-03 Saint-Gobain Industrial Ceramics, Inc. Electronic circuit package with diamond film heat conductor

Also Published As

Publication number Publication date
CA2284396A1 (en) 2000-04-02
EP0991121A3 (en) 2005-11-16
US6316826B1 (en) 2001-11-13
EP0991121A2 (en) 2000-04-05
JP2000174166A (ja) 2000-06-23

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St.27 status event code: A-0-1-A10-A12-nap-PA0109

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000