KR19990008315A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR19990008315A
KR19990008315A KR1019970707841A KR19970707841A KR19990008315A KR 19990008315 A KR19990008315 A KR 19990008315A KR 1019970707841 A KR1019970707841 A KR 1019970707841A KR 19970707841 A KR19970707841 A KR 19970707841A KR 19990008315 A KR19990008315 A KR 19990008315A
Authority
KR
South Korea
Prior art keywords
oxide film
film
order
silicon substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019970707841A
Other languages
English (en)
Korean (ko)
Inventor
미우라히데오
이케다슈우지
스즈키노리오
사이토나오토
니시무라아사오
Original Assignee
가나이쓰토무
가부시키가이샤히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이쓰토무, 가부시키가이샤히타치세이사쿠쇼 filed Critical 가나이쓰토무
Publication of KR19990008315A publication Critical patent/KR19990008315A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
KR1019970707841A 1995-05-08 1996-05-01 반도체장치 및 그 제조방법 Ceased KR19990008315A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-109585 1995-05-08
JP7109585A JPH08306678A (ja) 1995-05-08 1995-05-08 半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
KR19990008315A true KR19990008315A (ko) 1999-01-25

Family

ID=14514002

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970707841A Ceased KR19990008315A (ko) 1995-05-08 1996-05-01 반도체장치 및 그 제조방법

Country Status (6)

Country Link
JP (1) JPH08306678A (https=)
KR (1) KR19990008315A (https=)
IN (1) IN187708B (https=)
MY (1) MY132186A (https=)
TW (1) TW326099B (https=)
WO (1) WO1996036073A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
JPS5249771A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPH0628282B2 (ja) * 1984-09-19 1994-04-13 ソニー株式会社 半導体装置の製造方法
JP3403210B2 (ja) * 1992-02-14 2003-05-06 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
IN187708B (https=) 2002-06-08
JPH08306678A (ja) 1996-11-22
WO1996036073A1 (fr) 1996-11-14
MY132186A (en) 2007-09-28
TW326099B (en) 1998-02-01

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