KR19980025190A - 센서내의 막응력 보상회로 및 방법 - Google Patents

센서내의 막응력 보상회로 및 방법 Download PDF

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Publication number
KR19980025190A
KR19980025190A KR1019970051242A KR19970051242A KR19980025190A KR 19980025190 A KR19980025190 A KR 19980025190A KR 1019970051242 A KR1019970051242 A KR 1019970051242A KR 19970051242 A KR19970051242 A KR 19970051242A KR 19980025190 A KR19980025190 A KR 19980025190A
Authority
KR
South Korea
Prior art keywords
transducer
sensor
signal
stress
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970051242A
Other languages
English (en)
Korean (ko)
Inventor
이러 이. 배스킷
앤드류 씨. 맥닐
Original Assignee
빈센트 비.인그라시아
모터로라 인코포레이드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 비.인그라시아, 모터로라 인코포레이드 filed Critical 빈센트 비.인그라시아
Publication of KR19980025190A publication Critical patent/KR19980025190A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2275—Arrangements for correcting or for compensating unwanted effects for non linearity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Force In General (AREA)
KR1019970051242A 1996-09-30 1997-09-30 센서내의 막응력 보상회로 및 방법 Withdrawn KR19980025190A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US722,384 1996-09-30
US08/722,384 US6308577B1 (en) 1996-09-30 1996-09-30 Circuit and method of compensating for membrane stress in a sensor

Publications (1)

Publication Number Publication Date
KR19980025190A true KR19980025190A (ko) 1998-07-06

Family

ID=24901612

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970051242A Withdrawn KR19980025190A (ko) 1996-09-30 1997-09-30 센서내의 막응력 보상회로 및 방법

Country Status (6)

Country Link
US (1) US6308577B1 (enExample)
EP (1) EP0833137A3 (enExample)
JP (1) JPH10111200A (enExample)
KR (1) KR19980025190A (enExample)
CN (1) CN1089161C (enExample)
TW (1) TW345748B (enExample)

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* Cited by examiner, † Cited by third party
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US6056888A (en) * 1999-04-19 2000-05-02 Motorola, Inc. Electronic component and method of manufacture
DE19957556A1 (de) * 1999-11-30 2001-05-31 Bosch Gmbh Robert Halbleiter-Drucksensor und Meßanordnung
JP2002310826A (ja) * 2001-02-08 2002-10-23 Tgk Co Ltd 圧力センサの調整方法
JP4228827B2 (ja) * 2003-07-31 2009-02-25 パナソニック電工株式会社 圧電型超音波センサ及びその共振周波数調節方法
US7006938B2 (en) * 2004-06-16 2006-02-28 Ami Semiconductor, Inc. Reactive sensor modules using Pade' Approximant based compensation and providing module-sourced excitation
DE502004011268D1 (de) * 2004-09-24 2010-07-22 Grundfos As Drucksensor
DE102005017853A1 (de) * 2005-04-18 2006-10-19 Siemens Ag Drucksensorvorrichtung
US8132465B1 (en) 2007-08-01 2012-03-13 Silicon Microstructures, Inc. Sensor element placement for package stress compensation
US9562820B2 (en) * 2013-02-28 2017-02-07 Mks Instruments, Inc. Pressure sensor with real time health monitoring and compensation
US10027078B2 (en) 2014-01-02 2018-07-17 Sears Brands, L.L.C. Slide battery and power tool for use with both slide and post batteries
DE102015104410B4 (de) * 2015-03-24 2018-09-13 Tdk-Micronas Gmbh Drucksensor
US10553843B2 (en) 2016-03-28 2020-02-04 Transform Sr Brands Llc Portable power tool, battery pack, and cell configurations for same
JP6663314B2 (ja) * 2016-07-08 2020-03-11 アズビル株式会社 圧力センサ
CN107192556B (zh) * 2017-05-12 2019-07-02 重庆交通大学 微型定容燃烧空间测试装置
CN114152369B (zh) * 2020-09-07 2024-10-08 中国科学院微电子研究所 一种mems压阻式压力传感器及压阻排布方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663833A (en) 1970-04-02 1972-05-16 Monsanto Co Square root extractor for a process control system
US3743926A (en) * 1972-04-06 1973-07-03 Gen Electric Fine linearity control in integral silicon transducers
US3772628A (en) * 1972-05-30 1973-11-13 Gen Electric Integral silicon diaphragms for low pressure measurements
US4050313A (en) * 1975-06-04 1977-09-27 Hitachi, Ltd. Semiconductor pressure transducer
US4317126A (en) 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4476726A (en) * 1982-08-19 1984-10-16 Kulite Semiconductor Products, Inc. Pressure transducers exhibiting linear pressure operation
JPS59127876A (ja) * 1983-01-13 1984-07-23 Nec Corp ダイアフラム形半導体圧力センサ
JPS62204580A (ja) * 1986-03-05 1987-09-09 Fujikura Ltd 半導体圧力センサの直線性改善方法
US4800759A (en) 1987-08-31 1989-01-31 Yokogawa Electric Corporation Semiconductor pressure converter
JPH01109231A (ja) * 1987-10-22 1989-04-26 Komatsu Ltd 圧力センサ
JPH01253622A (ja) * 1988-04-01 1989-10-09 Kyowa Electron Instr Co Ltd ダイヤフラム型荷重変換器
JPH02150732A (ja) * 1988-12-01 1990-06-11 Fuji Electric Co Ltd 圧力変換器の補償回路
FR2650389B1 (fr) * 1989-07-27 1993-03-26 Sextant Avionique Dispositif de mesure de deformation d'une membrane
EP0454901B1 (de) * 1989-12-06 1994-06-22 Siemens-Albis Aktiengesellschaft Kraftwandler
DE4000326C2 (de) * 1990-01-08 1995-12-14 Mannesmann Ag Drucksensor
JPH03233334A (ja) * 1990-02-08 1991-10-17 Nec Corp 半導体圧力センサ
US5188983A (en) * 1990-04-11 1993-02-23 Wisconsin Alumni Research Foundation Polysilicon resonating beam transducers and method of producing the same
US5166892A (en) * 1990-04-30 1992-11-24 Yamato Scale Company, Limited Device for compensating for time-dependent error due to creep and like of measuring apparatus
US5291788A (en) * 1991-09-24 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor pressure sensor

Also Published As

Publication number Publication date
US6308577B1 (en) 2001-10-30
CN1089161C (zh) 2002-08-14
EP0833137A3 (en) 1999-05-19
EP0833137A2 (en) 1998-04-01
CN1178900A (zh) 1998-04-15
JPH10111200A (ja) 1998-04-28
TW345748B (en) 1998-11-21

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19970930

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid