KR102923641B1 - Fpd용의 포토마스크, fpd용의 포토마스크에 있어서의 위치 계측용 마크의 형성 방법 및 fpd용의 포토마스크의 제조 방법 - Google Patents
Fpd용의 포토마스크, fpd용의 포토마스크에 있어서의 위치 계측용 마크의 형성 방법 및 fpd용의 포토마스크의 제조 방법Info
- Publication number
- KR102923641B1 KR102923641B1 KR1020230004397A KR20230004397A KR102923641B1 KR 102923641 B1 KR102923641 B1 KR 102923641B1 KR 1020230004397 A KR1020230004397 A KR 1020230004397A KR 20230004397 A KR20230004397 A KR 20230004397A KR 102923641 B1 KR102923641 B1 KR 102923641B1
- Authority
- KR
- South Korea
- Prior art keywords
- photomask
- position measurement
- film
- fpd
- mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022018326A JP7802562B2 (ja) | 2022-02-08 | 2022-02-08 | Fpd用のフォトマスク、fpd用のフォトマスクにおける位置計測用マークの形成方法及びfpd用のフォトマスクの製造方法 |
| JPJP-P-2022-018326 | 2022-02-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230120090A KR20230120090A (ko) | 2023-08-16 |
| KR102923641B1 true KR102923641B1 (ko) | 2026-02-05 |
Family
ID=87540130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020230004397A Active KR102923641B1 (ko) | 2022-02-08 | 2023-01-12 | Fpd용의 포토마스크, fpd용의 포토마스크에 있어서의 위치 계측용 마크의 형성 방법 및 fpd용의 포토마스크의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7802562B2 (https=) |
| KR (1) | KR102923641B1 (https=) |
| CN (1) | CN116577961A (https=) |
| TW (1) | TWI866050B (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117452778B (zh) * | 2023-11-08 | 2024-12-13 | 深圳清溢微电子有限公司 | 掩膜版二次曝光自动对位方法、装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077308A (ja) * | 1998-08-31 | 2000-03-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2001201844A (ja) | 2000-01-21 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法およびフォトマスクの製造方法 |
| JP2010122349A (ja) * | 2008-11-18 | 2010-06-03 | Dainippon Printing Co Ltd | 階調マスク |
| US20120141926A1 (en) | 2010-12-03 | 2012-06-07 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Lcd panel photolithography process and mask |
| JP2017102304A (ja) | 2015-12-02 | 2017-06-08 | 株式会社エスケーエレクトロニクス | アライメントパターンを有するフォトマスクブランクスならびにそれを用いたフォトマスクおよびその製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3372685B2 (ja) * | 1994-12-15 | 2003-02-04 | キヤノン株式会社 | 半導体露光装置 |
| JPH11288076A (ja) * | 1998-04-02 | 1999-10-19 | Toshiba Corp | 位相シフトマスク及びその製造方法並びに重ね合わせ精度測定用マークを用いた測定方法 |
| JP3035297B1 (ja) * | 1999-05-27 | 2000-04-24 | 株式会社ケムテックジャパン | プリント基板の製造装置および製造方法 |
| TW519701B (en) * | 2001-12-28 | 2003-02-01 | United Microelectronics Corp | Overlay mark structure and its measurement application |
| JP4604443B2 (ja) * | 2002-12-19 | 2011-01-05 | 株式会社ニコン | 繋ぎ合わせ測定装置および分割露光用マスク |
| WO2005116577A1 (ja) * | 2004-05-28 | 2005-12-08 | Nikon Corporation | 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ-ク識別装置及びエッジ位置検出装置 |
| TWI271811B (en) * | 2005-01-13 | 2007-01-21 | Ind Tech Res Inst | Overlay measurement target |
| JP2007248802A (ja) * | 2006-03-16 | 2007-09-27 | Hoya Corp | パターン形成方法及びグレートーンマスクの製造方法 |
| JP5326282B2 (ja) * | 2008-01-10 | 2013-10-30 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法、及び露光用マスク |
| JP2009282386A (ja) * | 2008-05-23 | 2009-12-03 | Toyota Motor Corp | フォトマスクと半導体チップの製造方法 |
| JP5306391B2 (ja) * | 2011-03-02 | 2013-10-02 | 株式会社東芝 | フォトマスク |
| US11048159B2 (en) * | 2016-03-31 | 2021-06-29 | Hoya Corporation | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
| CN109468593A (zh) * | 2018-12-04 | 2019-03-15 | 京东方科技集团股份有限公司 | 一种显示面板的制备方法、显示面板及蒸镀装置 |
-
2022
- 2022-02-08 JP JP2022018326A patent/JP7802562B2/ja active Active
-
2023
- 2023-01-12 KR KR1020230004397A patent/KR102923641B1/ko active Active
- 2023-01-18 CN CN202310086669.6A patent/CN116577961A/zh active Pending
- 2023-02-03 TW TW112103767A patent/TWI866050B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077308A (ja) * | 1998-08-31 | 2000-03-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2001201844A (ja) | 2000-01-21 | 2001-07-27 | Hitachi Ltd | 半導体集積回路装置の製造方法およびフォトマスクの製造方法 |
| JP2010122349A (ja) * | 2008-11-18 | 2010-06-03 | Dainippon Printing Co Ltd | 階調マスク |
| US20120141926A1 (en) | 2010-12-03 | 2012-06-07 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Lcd panel photolithography process and mask |
| JP2017102304A (ja) | 2015-12-02 | 2017-06-08 | 株式会社エスケーエレクトロニクス | アライメントパターンを有するフォトマスクブランクスならびにそれを用いたフォトマスクおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023115863A (ja) | 2023-08-21 |
| KR20230120090A (ko) | 2023-08-16 |
| CN116577961A (zh) | 2023-08-11 |
| TW202332984A (zh) | 2023-08-16 |
| TWI866050B (zh) | 2024-12-11 |
| JP7802562B2 (ja) | 2026-01-20 |
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